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Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
Authors:
Taoufiq Ouaj,
Christophe Arnold,
Jon Azpeitia,
Sunaja Baltic,
Julien Barjon,
Jose Cascales,
Huanyao Cun,
David Esteban,
Mar Garcia-Hernandez,
Vincent Garnier,
Subodh K. Gautam,
Thomas Greber,
Said Said Hassani,
Adrian Hemmi,
Ignacio Jimenéz,
Catherine Journet,
Paul Kögerler,
Annick Loiseau,
Camille Maestre,
Marvin Metzelaars,
Philipp Schmidt,
Christoph Stampfer,
Ingrid Stenger,
Philippe Steyer,
Takashi Taniguchi
, et al. (3 additional authors not shown)
Abstract:
We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitri…
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We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices.
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Submitted 5 September, 2024;
originally announced September 2024.
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Infrared resonance Raman of bilayer graphene: signatures of massive fermions and band structure on the 2D peak
Authors:
Lorenzo Graziotto,
Francesco Macheda,
Tommaso Venanzi,
Guglielmo Marchese,
Simone Sotgiu,
Taoufiq Ouaj,
Elena Stellino,
Claudia Fasolato,
Paolo Postorino,
Marvin Metzelaars,
Paul Kögerler,
Bernd Beschoten,
Matteo Calandra,
Michele Ortolani,
Christoph Stampfer,
Francesco Mauri,
Leonetta Baldassarre
Abstract:
Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to 1.17 eV we target these massive quasiparticles in the split bands close to the K point. The low excitation energy weakens some of the Raman processes which are r…
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Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to 1.17 eV we target these massive quasiparticles in the split bands close to the K point. The low excitation energy weakens some of the Raman processes which are resonant in the visible, and induces a clearer frequency-separation of the sub-structures of the resonance 2D peak in bi- and trilayer samples. We follow the excitation-energy dependence of the intensity of each sub-structure and, comparing experimental measurements on bilayer graphene with ab initio theoretical calculations, we trace back such modifications on the joint effects of probing the electronic dispersion close to the band splitting and enhancement of electron-phonon matrix elements.
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Submitted 19 January, 2024; v1 submitted 6 October, 2023;
originally announced October 2023.
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An open-source robust machine learning platform for real-time detection and classification of 2D material flakes
Authors:
Jan-Lucas Uslu,
Taoufiq Ouaj,
David Tebbe,
Alexey Nekrasov,
Jo Henri Bertram,
Marc Schütte,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Lutz Waldecker,
Christoph Stampfer
Abstract:
The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimension…
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The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe$_2$, MoSe$_2$, CrI$_3$, 1T-TaS$_2$ and hexagonal BN. Our platform has been tested over a two-year period, during which more than $10^6$ images of multiple different materials were acquired by over 30 individual researchers.
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Submitted 17 January, 2024; v1 submitted 26 June, 2023;
originally announced June 2023.
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Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices
Authors:
Taoufiq Ouaj,
Leonard Kramme,
Marvin Metzelaars,
Jiahan Li,
Kenji Watanabe,
Takashi Taniguchi,
James H. Edgar,
Bernd Beschoten,
Paul Kögerler,
Christoph Stampfer
Abstract:
In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a single step using hydrochloric acid and that (ii) these hBN crystals allow the fabrication of high carrier mobility graphene devices. By combining spatially-resolv…
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In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a single step using hydrochloric acid and that (ii) these hBN crystals allow the fabrication of high carrier mobility graphene devices. By combining spatially-resolved confocal Raman spectroscopy and electrical transport measurements, we confirm the excellent quality of these crystals for high-performance hBN-graphene-based van der Waals heterostructures. The full width at half maximum of the graphene Raman 2D peak is as low as 16 cm$^{-1}$, and the room temperature charge carrier mobilitiy is around 80000 cm$^2$/(Vs) at a carrier density 1$\times$10$^{12}$cm$^{-12}$. This is fully comparable with devices of similar dimensions fabricated using crystalline hBN synthesized by the high pressure and high temperature method. Finally, we show that for exfoliated high-quality hBN flakes with a thickness between 20 nm and 40 nm the line width of the hBN Raman peak, in contrast to the graphene 2D line width, is not useful for benchmarking hBN in high mobility graphene devices.
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Submitted 23 August, 2023; v1 submitted 6 April, 2023;
originally announced April 2023.
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Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy
Authors:
Tommaso Venanzi,
Lorenzo Graziotto,
Francesco Macheda,
Simone Sotgiu,
Taoufiq Ouaj,
Elena Stellino,
Claudia Fasolato,
Paolo Postorino,
Vaidotas Mišeikis,
Marvin Metzelaars,
Paul Kögerler,
Bernd Beschoten,
Camilla Coletti,
Stefano Roddaro,
Matteo Calandra,
Michele Ortolani,
Christoph Stampfer,
Francesco Mauri,
Leonetta Baldassarre
Abstract:
We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite.…
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We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite. Comparing with fully \textit{ab initio} theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature.
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Submitted 7 June, 2025; v1 submitted 2 December, 2022;
originally announced December 2022.
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Fractional quantum Hall effect in CVD-grown graphene
Authors:
M. Schmitz,
T. Ouaj,
Z. Winter,
K. Rubi,
K. Watanabe,
T. Taniguchi,
U. Zeitler,
B. Beschoten,
C. Stampfer
Abstract:
We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results sh…
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We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.
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Submitted 18 May, 2020;
originally announced May 2020.
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Tailoring mechanically-tunable strain fields in graphene
Authors:
M. Goldsche,
J. Sonntag,
T. Khodkov,
G. Verbiest,
S. Reichardt,
C. Neumann,
T. Ouaj,
N. von den Driesch,
D. Buca,
C. Stampfer
Abstract:
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substr…
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There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$μ$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.
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Submitted 13 November, 2017;
originally announced November 2017.
