Showing 1–50 of 64 results for author: Ou, Y

Altermagnetic band splitting in 10 nm epitaxial CrSb thin films

Authors: Sandra Santhosh, Paul Corbae, Wilson J. Yanez-Parreno, Supriya Ghosh, Christopher J. Jensen, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Julie A. Borchers, Alexander J. Grutter, Timothy R. Charlton, Saurav Islam, Anthony Richardella, K. Andre Mkhoyan, Christopher J. Palmstrøm, Yongxi Ou, Nitin Samarth

Abstract: Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K.… ▽ More Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature. △ Less

Submitted 12 May, 2025; v1 submitted 30 April, 2025; originally announced May 2025.

Comments: Revisions: author list, comments about ARPES analysis, TEM analysis, and anomalous Hall effect data

Improving diffusion modeling in all-solid-state lithium batteries: a novel approach for grain boundary effects

Authors: Lena Scholz, Yongliang Ou, Blazej Grabowski, Felix Fritzen

Abstract: All-solid-state lithium-ion batteries offer promising advantages with respect to capacity, safety, and performance. The diffusion behavior of lithium ions in the contained polycrystalline solid-state electrolyte is crucial for battery function. While atomistic studies indicate that grain boundaries (GBs) and grain size significantly impact diffusivity, the corresponding effects are either neglecte… ▽ More All-solid-state lithium-ion batteries offer promising advantages with respect to capacity, safety, and performance. The diffusion behavior of lithium ions in the contained polycrystalline solid-state electrolyte is crucial for battery function. While atomistic studies indicate that grain boundaries (GBs) and grain size significantly impact diffusivity, the corresponding effects are either neglected in simulations on larger scales or considered only under strong assumptions such as isotropy. Our approach considers the fully resolved crystalline structure with a parametrization aligned with the atomistic perspective to describe diffusion along and across GBs. The approach is embedded into a finite element simulation using a novel collapsed interface element based on an analytical description in thickness direction. Results are governed by different and potentially anisotropic diffusion coefficients in bulk and GB domains. The mesoscale response is derived using linear computational homogenization to capture large-scale effects. The novel collapsed interface description allows for a reconstruction of the 3D transport behavior within the GB domain without resolving it and is able to capture the relevant transport mechanisms such as channeling effects and concentration jumps. Grain size and GB volume fraction are expressed in terms of an affine parameter dependence and can be altered without any changes to geometry or mesh. Together with the observed dependence of the effective material response on the anisotropic GB parametrization, this leads to the identification of four distinct diffusion regimes, each with implications for the design of battery materials. △ Less

Submitted 14 April, 2025; originally announced April 2025.

Charge to spin conversion in atomically thin bismuth

Authors: Wilson J. Yánez-Parreño, Alexander Vera, Sandra Santhosh, Chengye Dong, Jimmy C. Kotsakidis, Yongxi Ou, Saurav Islam, Adam L. Friedman, Maxwell Wetherington, Joshua Robinson, Nitin Samarth

Abstract: We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm composition, dimensionality, and a 96.5 \% intercalation coverage using X-ray photolectron spectroscopy, scanning transmission microscopy, low energy electron diffraction, and Raman spectroscopy. Electri… ▽ More We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm composition, dimensionality, and a 96.5 \% intercalation coverage using X-ray photolectron spectroscopy, scanning transmission microscopy, low energy electron diffraction, and Raman spectroscopy. Electrical transport measurements show signs of weak antilocalization in the heterostructure, consistent with spin-orbit coupling in this hybrid heterostructure. Spin torque ferromagnetic resonance measurements in permalloy/EG/2D-Bi heterostructures probe charge-to-spin conversion and revealing that an in plane polarization of the spin current, perpendicular to the charge current. The ratio of the in-plane to out-of-plane torque is 3.75 times higher than in hydrogenated graphene control samples. △ Less

Submitted 13 January, 2025; originally announced January 2025.

Atomistic modeling of bulk and grain boundary diffusion in solid electrolyte Li$_6$PS$_5$Cl using machine-learning interatomic potentials

Authors: Yongliang Ou, Yuji Ikeda, Lena Scholz, Sergiy Divinski, Felix Fritzen, Blazej Grabowski

Abstract: Li$_6$PS$_5$Cl is a promising candidate for the solid electrolyte in all-solid-state Li-ion batteries. In applications, this material is in a polycrystalline state with grain boundaries (GBs) that can affect ionic conductivity. While atomistic modeling provides valuable information on the impact of GBs on Li diffusion, such studies face either high computational cost (\textit{ab initio} methods) o… ▽ More Li$_6$PS$_5$Cl is a promising candidate for the solid electrolyte in all-solid-state Li-ion batteries. In applications, this material is in a polycrystalline state with grain boundaries (GBs) that can affect ionic conductivity. While atomistic modeling provides valuable information on the impact of GBs on Li diffusion, such studies face either high computational cost (\textit{ab initio} methods) or accuracy limitations (classical potentials) as challenges. Here, we develop a quality-level-based active learning scheme for efficient and systematic development of \textit{ab initio}-based machine-learning interatomic potentials, specifically moment tensor potentials (MTPs), for large-scale, long-time, and high-accuracy simulations of complex atomic structures and diffusion mechanisms as encountered in solid electrolytes. Based on this scheme, we obtain MTPs for Li$_6$PS$_5$Cl and investigate two tilt GBs, $\Sigma3(1\bar{1}2)[110]$, $\Sigma3(\bar{1}11)[110]$, and one twist GB, $\Sigma5(001)[001]$. All three GBs exhibit low formation energies of less than \SI{20}{meV/\angstrom\textsuperscript{2}}, indicating their high stability in polycrystalline Li$_6$PS$_5$Cl. Using the MTPs, diffusion coefficients of the anion-ordered and anion-disordered bulk, as well as the three GBs, are obtained from molecular dynamics simulations of atomistic models. At \SI{300}{\kelvin}, the GB diffusion coefficients fall between the ones of the anion-ordered bulk structure (\SI{0.012e-7}{cm^2/s}, corresponding ionic conductivity about \SI{0.2}{mS/cm}) and the anion-disordered bulk structure (\SI{50}{\percent} Cl/S-anion disorder; \SI{2.203e-7}{cm^2/s}, about \SI{29.8}{mS/cm}) of Li$_6$PS$_5$Cl. Experimental data fall between the Arrhenius-extrapolated diffusion coefficients of the investigated atomic structures. △ Less

Submitted 31 July, 2024; v1 submitted 4 July, 2024; originally announced July 2024.

Comments: 26 pages, 14 figures, 5 tables

Optical Imaging of Flavor Order in Flat Band Graphene

Authors: Tian Xie, Tobias M. Wolf, Siyuan Xu, Zhiyuan Cui, Richen Xiong, Yunbo Ou, Patrick Hays, Ludwig F Holleis, Yi Guo, Owen I Sheekey, Caitlin Patterson, Trevor Arp, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Andrea F Young, Allan H. MacDonald, Chenhao Jin

Abstract: Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transit… ▽ More Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor orders with high throughput, and with broad temperature and device compatibility. Our work paves the way for optical probing and imaging of flavor orders in flat band graphene systems. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Comments: 29 pages, 4 figures, with supplementary materials

Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures

Authors: Hongyuan Li, Ziyu Xiang, Tianle Wang, Mit H. Naik, Woochang Kim, Jiahui Nie, Shiyu Li, Zhehao Ge, Zehao He, Yunbo Ou, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Steven G. Louie, Michael P. Zaletel, Michael F. Crommie, Feng Wang

Abstract: One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demon… ▽ More One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling

Authors: Yunbo Ou, Murod Mirzhalilov, Norbert M. Nemes, Jose L. Martinez, Mirko Rocci, Alexander Duong, Austin Akey, Alexandre C. Foucher, Wenbo Ge, Dhavala Suri, Yiping Wang, Haile Ambaye, Jong Keum, Mohit Randeria, Nandini Trivedi, Kenneth S. Burch, David C. Bell, Frances M. Ross, Weida Wu, Don Heiman, Valeria Lauter, Jagadeesh S. Moodera, Hang Chi

Abstract: Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2… ▽ More Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) and/or Al2O3(001) substrates using molecular beam epitaxy. Robust ferromagnetism persists in the 2D limit. In particular, the Curie temperature TC of 2 ML Cr2Te3 increases from 100 K to ~ 120 K when proximitized to topological insulator (TI) (Bi,Sb)2Te3, with substantially boosted magnetization as observed via polarized neutron reflectometry. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely universal underlying TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics. △ Less

Submitted 15 May, 2025; v1 submitted 22 December, 2023; originally announced December 2023.

Comments: Main: 9 pages, 3 figures, 1 table; SI: 4 pages, 9 figures

Journal ref: Reports on Progress in Physics 88, 060501 (2025)

Electrically controlled interlayer trion fluid in electron-hole bilayers

Authors: Ruishi Qi, Qize Li, Zuocheng Zhang, Sudi Chen, Jingxu Xie, Yunbo Ou, Zhiyuan Cui, David D. Dai, Andrew Y. Joe, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Liang Fu, Feng Wang

Abstract: The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the… ▽ More The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the strong coupling regime of electron-hole bilayers, electrons and holes in separate layers can spontaneously form three-particle trion bound states that resemble positronium ions in high energy physics. The interlayer trions can assume 1e-2h and 2e-1h configurations, where electrons and holes are confined in different transition metal dichalcogenide layers. We show that the two correlated holes in 1e-2h trions form a spin-singlet state with a spin gap of ~1meV. By electrostatic gating, the equilibrium state of our system can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, a trion-charge mixture or an electron-hole plasma. Upon optical excitation, the system can host novel high-order multiparticle charge complexes including interlayer four-particle complex (tetrons) and five-particle complex (pentons). Our work demonstrates a unique platform to study novel correlated phases of tunable Bose-Fermi mixtures and opens up new opportunities to realize artificial ions/molecules in electronic devices. △ Less

Submitted 5 December, 2023; originally announced December 2023.

Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

Authors: Yongxi Ou, Wilson Yanez-Parreño, Yu-sheng Huang, Supriya Ghosh, Cüneyt Şahin, Max Stanley, Sandra Santhosh, Saurav Islam, Anthony Richardella, K. Andre Mkhoyan, Michael E. Flatté, Nitin Samarth

Abstract: Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin… ▽ More Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin conversion in a canonical topological insulator, Bi$_{1-x}$Sb$_x$, to address this fundamentally unresolved question. We use spin-torque ferromagnetic resonance measurements to accurately probe the charge-to-spin conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$~thin films of high structural quality spanning the entire range of composition, including both trivial and topological band structures, as verified using {\it in vacuo} angle-resolved photoemission spectroscopy. From these measurements, we deduce the effective spin Hall conductivity (SHC) and find excellent agreement with the values predicted by tight-binding calculations for the intrinsic SHC of the bulk bands. These results provide strong evidence that the strong spin-orbit entanglement of bulk states well below the Fermi energy connects directly to the SHC in epitaxial Bi$_{1-x}$Sb$_x$~films interfaced with a metallic ferromagnet. The excellent agreement between theory and experiment points to the generic value of analyses focused entirely on bulk properties, even for topological systems involving non-conserved spin currents. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Epitaxial growth and characterization of Bi$_{1-x}$Sb$_x$ thin films on (0001) sapphire substrates

Authors: Yu-Sheng Huang, Saurav Islam, Yongxi Ou, Supriya Ghosh, Anthony Richardella, K. Andre Mkhoyan, Nitin Samarth

Abstract: We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals epitaxial growth of films of reasonable structural quality. This is furth… ▽ More We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals epitaxial growth of films of reasonable structural quality. This is further confirmed via x-ray diffraction pole figures that determine the epitaxial registry between the thin film and substrate. We further investigate the microscopic structure of thin films via Raman spectroscopy, demonstrating how the vibrational modes vary as the composition changes and discussing the implications for the crystal structure. We also characterize the samples using electrical transport measurements. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Journal ref: APL Mater. 12, 021106 (2024)

Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure

Authors: Arpita Mitra, Run Xiao, Wilson Yanez, Yongxi Ou, Juan Chamorro, Tyrel McQueen, Alexander J. Grutter, Julie A. Borchers, Michael R. Fitzsimmons, Timothy R. Charlton, Nitin Samarth

Abstract: Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn… ▽ More Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd$_3$As$_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd$_3$As$_2$ itself must be relatively small ($<$ 14 emu/cm$^3$). △ Less

Submitted 1 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. Materials 7, 094201 (2023)

Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2

Authors: Run Xiao, Saurav Islam, Wilson Yanez, Yongxi Ou, Nitin Samarth, Haiwen Liu, X. C. Xie, Juan Chamorro, Tyrel M. McQueen

Abstract: Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universa… ▽ More Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universal conductance fluctuations in top-gated nanowires of the prototypical Dirac semimetal Cd3As2. As the magnetic field is increased beyond the phase-breaking field, we find a factor of sqrt(2) reduction in the magnitude of the universal conductance fluctuations, in agreement with numerical calculations that study the effect of broken time reversal symmetry in a 3D Dirac semimetal. In contrast, the magnitude of the fluctuations increases monotonically as the chemical potential is gated away from the charge neutrality point. This effect cannot be attributed to broken inversion symmetry, but can be explained by Fermi surface anisotropy. The concurrence between experimental data and theory in our study provides unequivocal evidence that universal conductance fluctuations are the dominant source of intrinsic transport fluctuations in mesoscopic Cd3As2 devices and offers a promising general methodology for probing the effects of broken symmetry in topological quantum materials. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Journal ref: Nano Letters 6/15/2023

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Authors: Hang Chi, Yunbo Ou, Tim B. Eldred, Wenpei Gao, Sohee Kwon, Joseph Murray, Michael Dreyer, Robert E. Butera, Alexandre C. Foucher, Haile Ambaye, Jong Keum, Alice T. Greenberg, Yuhang Liu, Mahesh R. Neupane, George J. de Coster, Owen A. Vail, Patrick J. Taylor, Patrick A. Folkes, Charles Rong, Gen Yin, Roger K. Lake, Frances M. Ross, Valeria Lauter, Don Heiman, Jagadeesh S. Moodera

Abstract: Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as establ… ▽ More Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics. △ Less

Submitted 9 December, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Comments: Main: 9 pages, 5 figures; SI: 5 pages, 9 figures

Journal ref: Nature Communications 14, 3222 (2023)

Dynamic stabilization of perovskites at elevated temperatures: A comparison between cubic BaFeO$_{\textbf{3}}$ and vacancy-ordered monoclinic BaFeO$_{\textbf{2.67}}$

Authors: Yongliang Ou, Yuji Ikeda, Oliver Clemens, Blazej Grabowski

Abstract: The impact of ordered vacancies on the dynamic stability of perovskites is investigated under the $\textit{ab initio}$ framework with a focus on cubic BaFeO$_{3}$ ($Pm\bar{3}m$) and vacancy-ordered monoclinic BaFeO$_{2.67}$ ($P2_{1}/m$). The harmonic approximation shows that both structures are dynamically unstable at 0 K. For the monoclinic structure, the instability is related to rotational dist… ▽ More The impact of ordered vacancies on the dynamic stability of perovskites is investigated under the $\textit{ab initio}$ framework with a focus on cubic BaFeO$_{3}$ ($Pm\bar{3}m$) and vacancy-ordered monoclinic BaFeO$_{2.67}$ ($P2_{1}/m$). The harmonic approximation shows that both structures are dynamically unstable at 0 K. For the monoclinic structure, the instability is related to rotational distortions of the Fe coordination tetrahedra near the ordered vacancies. $\textit{Ab initio}$ molecular dynamics simulations in combination with the introduced structural descriptor demonstrate that both structures are stabilized above 130 K. Our results suggest that the ordered vacancies do not significantly alter the critical temperature at which Ba$-$Fe$-$O perovskites are dynamically stabilized. Further, strong anharmonicity for the vacancy-ordered structure above its critical temperature is revealed by a significant asymmetry of the trajectories of O anions near the ordered vacancies. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 13 pages, 7 figures

Journal ref: Phys. Rev. B 106, 064308 (2022)

Giant spin torque efficiency in naturally oxidized polycrystalline TaAs thin films

Authors: Wilson Yanez, Yongxi Ou, Run Xiao, Supriya Ghosh, Jyotirmay Dwivedi, Emma Steinebronn, Anthony Richardella, K. Andre Mkhoyan, Nitin Samarth

Abstract: We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by molecular beam epitaxy on (001) GaAs and interfaced with a metallic ferromagnet (Ni$_{0.8}$Fe$_{0.2}$). Spin torque ferromagnetic resonance (ST-FMR) measurement… ▽ More We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by molecular beam epitaxy on (001) GaAs and interfaced with a metallic ferromagnet (Ni$_{0.8}$Fe$_{0.2}$). Spin torque ferromagnetic resonance (ST-FMR) measurements in samples with an oxidized interface yield a spin torque efficiency as large as $ξ_{\mathrm{FMR}}=0.45\pm 0.25$ for a 8 nm Ni$_{0.8}$Fe$_{0.2}$ layer thickness. By studying ST-FMR in these samples with varying Ni$_{0.8}$Fe$_{0.2}$ layer thickness, we extract a damping-like torque efficiency as high as $ξ_{\mathrm{DL}}=1.36\pm 0.66$. In samples with a pristine (unoxidized) interface, the spin torque efficiency has opposite sign to that observed in oxidized samples ($ξ_{\mathrm{FMR}}=-0.27\pm 0.14$ for a 5 nm Ni$_{0.8}$Fe$_{0.2}$ layer thickness). We also find a lower bound on the spin Hall conductivity ($424 \pm 110 \frac{\hbar}{e}$ S/cm) which is surprisingly consistent with theoretical predictions for the single crystal Weyl semimetal state of TaAs. △ Less

Submitted 21 February, 2022; originally announced February 2022.

Journal ref: Phys. Rev. Applied 18, 054004 (2022)

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Authors: Yongxi Ou, Wilson Yanez, Run Xiao, Max Stanley, Supriya Ghosh, Boyang Zheng, Wei Jiang, Yu-Sheng Huang, Timothy Pillsbury, Anthony Richardella, Chaoxing Liu, Tony Low, Vincent H. Crespi, K. Andre Mkhoyan, Nitin Samarth

Abstract: The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fu… ▽ More The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device. △ Less

Submitted 16 November, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: Includes new data (ST-FMR) and calculations (spin Hall conductivity)

Journal ref: Nature Communications 13, 2972 (2022)

Distinctive momentum dependent charge-density-wave gap observed in CsV$_3$Sb$_5$ superconductor with topological Kagome lattice

Authors: Zhengguo Wang, Sheng Ma, Yuhang Zhang, Haitao Yang, Zhen Zhao, Yi Ou, Yu Zhu, Shunli Ni, Zouyouwei Lu, Hui Chen, Kun Jiang, Li Yu, Yan Zhang, Xiaoli Dong, Jiangping Hu, Hong-Jun Gao, Zhongxian Zhao

Abstract: CsV$_3$Sb$_5$ is a newly discovered Kagome superconductor that attracts great interest due to its topological nontrivial band structure and the coexistence of superconductivity and charge-density-wave (CDW) with many exotic properties. Here, we report the detailed characterization of the CDW gap in high-quality CsV$_3$Sb$_5$ single crystals using high-resolution angle-resolved photoemission spectr… ▽ More CsV$_3$Sb$_5$ is a newly discovered Kagome superconductor that attracts great interest due to its topological nontrivial band structure and the coexistence of superconductivity and charge-density-wave (CDW) with many exotic properties. Here, we report the detailed characterization of the CDW gap in high-quality CsV$_3$Sb$_5$ single crystals using high-resolution angle-resolved photoemission spectroscopy. We find that the CDW gap is strongly momentum dependent. While gapped around the $M$ point, the electronic states remain gapless around the $Γ$ point and along the $Γ$-$K$ direction. Such momentum dependence indicates that the CDW is driven by the scattering of electrons between neighboring $M$ points, where the band structure hosts multiple saddle points and the density of state diverges near the Fermi level. Our observations of the partially gapped Fermi surface and strongly momentum-dependent CDW gap not only provide a foundation for uncovering the mechanism of CDW in CsV$_3$Sb$_5$, but also shed light on the understanding of how the CDW coexists with superconductivity in this topological Kagome superconductor. △ Less

Submitted 12 April, 2021; originally announced April 2021.

Comments: 10 pages, 4 figures

Distinct quantum anomalous Hall ground states induced by magnetic disorders

Authors: Chang Liu, Yunbo Ou, Yang Feng, Gaoyuan Jiang, Weixiong Wu, Shaorui Li, Zijia Cheng, Ke He, Xucun Ma, Qikun Xue, Yayu Wang

Abstract: The quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) represents a new state of matter originated from the interplay between topology and magnetism. The defining characteristics of the QAH ground state are the quantized Hall resistivity ($ρ_{yx}$) and vanishing longitudinal resistivity ($ρ_{xx}$) in the absence of external magnetic field. A fundamental question concerning… ▽ More The quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) represents a new state of matter originated from the interplay between topology and magnetism. The defining characteristics of the QAH ground state are the quantized Hall resistivity ($ρ_{yx}$) and vanishing longitudinal resistivity ($ρ_{xx}$) in the absence of external magnetic field. A fundamental question concerning the QAH effect is whether it is merely a zero-magnetic-field quantum Hall (QH) effect, or if it can host unique quantum phases and phase transitions that are unavailable elsewhere. The most dramatic departure of the QAH systems from other QH systems lies in the strong magnetic disorders that induce spatially random magnetization. Because disorder and magnetism play pivotal roles in the phase diagram of two-dimensional electron systems, the high degree of magnetic disorders in QAH systems may create novel phases and quantum critical phenomena. In this work, we perform systematic transport studies of a series of magnetic TIs with varied strength of magnetic disorders. We find that the ground state of QAH effect can be categorized into two distinct classes: the QAH insulator and anomalous Hall (AH) insulator phases, as the zero-magnetic-field counterparts of the QH liquid and Hall insulator in the QH systems. In the low disorder limit of the QAH insulator regime, we observe a universal quantized longitudinal resistance $ρ_{xx} = h/e^{2}$ at the coercive field. In the AH insulator regime, we find that a magnetic field can drive it to the QAH insulator phase through a quantum critical point with distinct scaling behaviors from that in the QH phase transition. We propose that the transmission between chiral edge states at domain boundaries, tunable by disorder and magnetic fields, is the key for determining the QAH ground state. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 17 pages, 5 figures

Journal ref: Physical Review X (2020)

Ultrafast carrier-lattice interactions and interlayer modulations of Bi2Se3 by X-ray free electron laser diffraction

Authors: Sungwon Kim, Youngsam Kim, Jaeseung Kim, Sungwook Choi, Kyuseok Yun, Dongjin Kim, Soo Yeon Lim, Sunam Kim, Sae Hwan Chun, Jaeku Park, Intae Eom, Kyung Sook Kim, Tae-Yeong Koo, Yunbo Ou, Ferhat Katmis, Haidan Wen, Anthony Dichiara, Donald Walko, Eric C. Landahl, Hyeonsik Cheong, Eunji Sim, Jagadeesh Moodera, Hyunjung Kim

Abstract: As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. How the carriers interact with lattice is important to understand the coupling with its topological phase. It is essential to measure with a time scale smaller than picoseconds for initial interaction. Here we use an X-ray free-electro… ▽ More As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. How the carriers interact with lattice is important to understand the coupling with its topological phase. It is essential to measure with a time scale smaller than picoseconds for initial interaction. Here we use an X-ray free-electron laser to perform time-resolved diffraction to study ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory (DFT) and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insight into instantaneous topological phases on ultrafast timescales. △ Less

Submitted 22 March, 2021; originally announced March 2021.

Spin and charge interconversion in Dirac semimetal thin films

Authors: Wilson Yanez, Yongxi Ou, Run Xiao, Jahyun Koo, Jacob T. Held, Supriya Ghosh, Jeffrey Rable, Timothy Pillsbury, Enrique Gonzalez Delgado, Kezhou Yang, Juan Chamorro, Alexander J. Grutter, Patrick Quarterman, Anthony Richardella, Abhronil Sengupta, Tyrel McQueen, Julie A. Borchers, K. Andre Mkhoyan, Binghai Yan, Nitin Samarth

Abstract: We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric compone… ▽ More We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pumping signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations. △ Less

Submitted 28 February, 2021; originally announced March 2021.

Journal ref: Phys. Rev. Applied 16, 054031 (2021)

Understanding interlaminar toughening of unidirectional CFRP laminates with carbon nanotube veils

Authors: Yunfu Ou, Carlos González, Juan José Vilatela

Abstract: The introduction of nanostructured interlayers is one of the most promising strategies for interlaminar reinforcement in structural composites. In this work, we study the failure mechanism and interlayer microstructure of aerospace-grade structural composites reinforced with thin veils of carbon nanotube produced using an industrialised spinning process. Samples of unidirectional carbon fibre/epox… ▽ More The introduction of nanostructured interlayers is one of the most promising strategies for interlaminar reinforcement in structural composites. In this work, we study the failure mechanism and interlayer microstructure of aerospace-grade structural composites reinforced with thin veils of carbon nanotube produced using an industrialised spinning process. Samples of unidirectional carbon fibre/epoxy matrix composites interleaved with different composition CNT veils were prepared using hot press method and tested for interlaminar fracture toughness (IFT), measured in Mode-I (opening) and Mode-II (in-plane shear), and for interlaminar shear strength (ILSS), evaluated by the short beam shear (SBS) test. The crack propagation mode could be directly determined through fractography analysis by electron microscopy and resin/CNT spatial discrimination by Raman spectroscopy, showing a clear correlation between interlaminar reinforcement and the balance between cohesive/adhesive failure mode at the interlayer region. Composites with full resin infiltration of the CNT veils give a large increase of Mode II IFT (88%) to 1500 J/m2 and a slight enhancement of apparent interlaminar shear strength (6.5%), but a decrease of Mode I IFT (-21%). The results help establish the role of interlayer infiltration, interlaminar crossings and formation of a carbon fibre bridgings, for interlaminar reinforcement with interleaves. △ Less

Submitted 30 November, 2020; originally announced December 2020.

Comments: 27 pages, 10 figures, 1 table

Journal ref: Composites Part B: Engineering , 201: 108372, 2020

Damage-tolerant, laminated structural supercapacitor composites enabled by integration of carbon nanotube fibres

Authors: Moumita Rana, Yunfu Ou, Chenchen Meng, Federico Sket, Carlos González, Juan J. Vilatela

Abstract: A natural embodiment for multifunctional materials combining energy-storing capabilities and structural mechanical properties are layered structures, similar to both laminate structural composites and electrochemical energy storage devices. A structural composite with integrated electric double layer capacitive storage is produced by resin infusion of a lay up including woven glass fabric used as… ▽ More A natural embodiment for multifunctional materials combining energy-storing capabilities and structural mechanical properties are layered structures, similar to both laminate structural composites and electrochemical energy storage devices. A structural composite with integrated electric double layer capacitive storage is produced by resin infusion of a lay up including woven glass fabric used as mechanical reinforcement, carbon nanotube non-woven fabrics as electrodes/current collectors and a polymer electrolyte. The energy-storing layer is patterned with holes, which after integration form resin plugs for mechanical interconnection between layers, similar to rivets. Finite element modelling is used to optimise rivet shape and areal density on interlaminar shear properties. Galvanostatic charge discharge tests during three point bending show no degradation of properties after large deflections or repeated load/unload cycling at 3.5 V.This mechanical tolerance is a consequence of the elimination of metallic current collectors and the effective integration of multifunctional materials, as observed by electron microscopy and X-ray computed tomography. In contrast, control samples with metallic current collectors, analogous to embedded devices, rapidly degrade upon repeated bending. △ Less

Submitted 12 August, 2020; originally announced August 2020.

Comments: 27 pages, 20 figures

Journal ref: Multifunctional Materials 2020, 3 (1), 015001

Hypergiant spin polarons photogenerated in ferromagnetic europium chalcogenides

Authors: X. Gratens, Yunbo Ou, J. Moodera, P. H. O. Rappl, A. B. Henriques

Abstract: We find that in the ferromagnetic semiconductor EuS, near its Curie temperature, a single band-edge photon generates a spin polaron (SP), whose magnetic moment approaches 20,000 Bohr magnetons. This is much larger than the supergiant photoinduced SPs in antiferromagnetic europium chalcogenides, reported previously. The larger SP in ferromagnetic EuS, and still larger expected for EuO, is explained… ▽ More We find that in the ferromagnetic semiconductor EuS, near its Curie temperature, a single band-edge photon generates a spin polaron (SP), whose magnetic moment approaches 20,000 Bohr magnetons. This is much larger than the supergiant photoinduced SPs in antiferromagnetic europium chalcogenides, reported previously. The larger SP in ferromagnetic EuS, and still larger expected for EuO, is explained by a larger Bohr radius of the photoexcited electron state, which encircles and polarizes a greater number of lattice spins. However, because the wave function of the photoexcited electron spreads over a greater volume, the photoexcited electron exchange interaction with individual lattice spins weakens, which makes the SP more easily quenched thermally. △ Less

Submitted 29 March, 2020; originally announced March 2020.

Comments: Accepted for publication in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 116, 152402 (2020)

Strain-Tuned Magnetic Anisotropy in Sputtered Thulium Iron Garnet Ultrathin Films and TIG/Au/TIG Valve Structures

Authors: Gilvânia Vilela, Hang Chi, Gregory Stephen, Charles Settens, Preston Zhou, Yunbo Ou, Dhavala Suri, Don Heiman, Jagadeesh Moodera

Abstract: Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.… ▽ More Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.5 to 60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick films annealed at 600 °C show compressive strain favoring an in-plane magnetic anisotropy (IPMA), whereas films annealed above 800 °C are under a tensile strain leading to a perpendicular magnetic anisotropy (PMA). Air-annealed films present a high degree of crystallinity and magnetization saturation close to the bulk value. These results lead to successful fabrication of trilayers TIG/Au/TIG, with coupling between the TIG layers depending on Au thickness. These results will facilitate the use of TIG to create various in situ clean hybrid structures for fundamental interface exchange studies, and towards the development of complex devices. Moreover, the sputtering technique is advantageous as it can be easily scaled up for industrial applications. △ Less

Submitted 21 September, 2020; v1 submitted 24 February, 2020; originally announced February 2020.

Comments: The following article has been accepted by Journal of Applied Physics

Journal ref: Journal of Applied Physics 127, 115302 (2020)

Investigation of spin orbit torque driven dynamics in ferromagnetic heterostructures

Authors: Xinran Zhou, Hang Chen, Yu-Sheng Ou, Tao Wang, Rasoul Barri, Harsha Kannan, John Q. Xiao, Matthew F. Doty

Abstract: We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the field-like (FL) spin orbit torque (SOT) dominates the amplitude of the first oscillation cycle of the magnetization precession and the damping-like (DL) torque determi… ▽ More We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the field-like (FL) spin orbit torque (SOT) dominates the amplitude of the first oscillation cycle of the magnetization precession and the damping-like (DL) torque determines the final steady-state magnetization. In our bilayer samples, we have extracted the effective fields, hFL and hDL, of the two SOTs from the time-resolved magnetization oscillation spectrum. The extracted values are in good agreement with those extracted from time-integrated DCMOKE measurements, suggesting that the SOTs do not change at high frequencies. We also find that the amplitude ratio of the first oscillation to steady state is linearly proportional to the ratio hFL/hDL. The first oscillation amplitude is inversely proportional to, whereas the steady state value is independent of, the applied external field along the current direction. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 12 pages, 4 figures

Interlaminar toughening in structural carbon fiber/epoxy composites interleaved with carbon nanotube veils

Authors: Yunfu Ou, Carlos González, Juan José Vilatela

Abstract: The susceptibility to delamination is one of the main concerns in fiber reinforced polymer composites (FRPs). This work demonstrates improvements of 60% in Mode-I fracture toughness after integration of thin (~30 micron), continuous veils of carbon nanotubes (CNTs) directly deposited onto carbon fiber fabric as the CNT are drawn from the gas-phase using a semi-industrial process. A combination of… ▽ More The susceptibility to delamination is one of the main concerns in fiber reinforced polymer composites (FRPs). This work demonstrates improvements of 60% in Mode-I fracture toughness after integration of thin (~30 micron), continuous veils of carbon nanotubes (CNTs) directly deposited onto carbon fiber fabric as the CNT are drawn from the gas-phase using a semi-industrial process. A combination of optical imaging, scanning electron microscopy and a Raman spectroscopy provide a new rapid tool to unambiguously determine the crack propagation path by simple visual inspection of fracture surface. The results show that interlaminar crossing between CNT veil/CF interfaces is of paramount importance. The crack front alternatingly propagates above and below the CNT-toughened interlayer, significantly improving the fracture toughness of resultant laminates. This mechanism is strongly influenced by the method used to integrate the veils onto the CF. CNT veils directly deposited onto the fabrics as a low-density layer lead to large improvements in interlaminar properties, whereas compact CNT veils densified by solvent exposure prior to their integration in the lay-up act as defects. △ Less

Submitted 12 July, 2019; v1 submitted 22 May, 2019; originally announced May 2019.

Comments: 29 pages, 8 figures

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Authors: Cong Liu, Feng An, Paria S. M. Gharavi, Qinwen Lu, Chao Chen, Liming Wang, Xiaozhi Zhan, Zedong Xu, Yuan Zhang, Ke Qu, Junxiang Yao, Yun Ou, Xiangli Zhong, Dongwen Zhang, Nagarajan Valanoor, Lang Chen, Tao Zhu, Deyang Chen, Xiaofang Zhai, Peng Gao, Tingting Jia, Shuhong Xie, Gaokuo Zhong, Jiangyu Li

Abstract: Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale… ▽ More Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale with a spontaneous polarization of 79~89uC/cm2. Careful compositional tuning leads to a bulk magnetization of ~0.07uB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0X10-7s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications. △ Less

Submitted 6 April, 2019; originally announced April 2019.

Do topology and ferromagnetism cooperate at the EuS/Bi$_2$Se$_3$ interface?

Authors: J. A. Krieger, Y. Ou, M. Caputo, A. Chikina, M. Döbeli, M. -A. Husanu, I. Keren, T. Prokscha, A. Suter, C. -Z. Chang, J. S. Moodera, V. N. Strocov, Z. Salman

Abstract: We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer… ▽ More We probe the local magnetic properties of interfaces between the insulating ferromagnet EuS and the topological insulator Bi$_2$Se$_3$ using low energy muon spin rotation (LE-$μ$SR). We compare these to the interface between EuS and the topologically trivial metal, titanium. Below the magnetic transition of EuS, we detect strong local magnetic fields which extend several nm into the adjacent layer and cause a complete depolarization of the muons. However, in both Bi$_2$Se$_3$ and titanium we measure similar local magnetic fields, implying that their origin is mostly independent of the topological properties of the interface electronic states. In addition, we use resonant soft X-ray angle resolved photoemission spectroscopy (SX-ARPES) to probe the electronic band structure at the interface between EuS and Bi$_2$Se$_3$. By tuning the photon energy to the Eu anti-resonance at the Eu $M_5$ pre-edge we are able to detect the Bi$_2$Se$_3$ conduction band, through a protective Al$_2$O$_3$ capping layer and the EuS layer. Moreover, we observe a signature of an interface-induced modification of the buried Bi$_2$Se$_3$ wave functions and/or the presence of interface states. △ Less

Submitted 31 January, 2019; originally announced January 2019.

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Authors: Qixun Guo, Yu Wu, Longxiang Xu, Yan Gong, Yunbo Ou, Yang Liu, Leilei Li, Jiao Teng, Yu Yan, Gang Han, Dongwei Wang, Lihua Wang, Shibing Long, Bowei Zhang, Xun Cao, Shanwu Yang, Xuemin Wang, Yizhong Huang, Tao Liu, Guanghua Yu, Ke He

Abstract: Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 fami… ▽ More Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Comments: 16 pages, 4 figures, 1 table

Broadband Circular Polarization Time-Domain Terahertz Spectroscopy

Authors: Evan V. Jasper, T. T. Mai, M. T. Warren, R. K. Smith, D. M. Heligman, E. McCormick, Y. S. Ou, M. Sheffield, R. Valdés Aguilar

Abstract: Light-matter interactions are key in providing fundamental information about materials. Even in the linear-response regime, the spectroscopic response of a material encodes in it many properties of the ground state as well as of its excitations. This knowledge has been critical in our understanding of novel quantum materials, and the further improvement and extensions of linear spectroscopy will c… ▽ More Light-matter interactions are key in providing fundamental information about materials. Even in the linear-response regime, the spectroscopic response of a material encodes in it many properties of the ground state as well as of its excitations. This knowledge has been critical in our understanding of novel quantum materials, and the further improvement and extensions of linear spectroscopy will continue to be key in the exploration of novel states of matter. We report the development of broadband circular polarization spectroscopy in the terahertz range of the electromagnetic spectrum. We take advantage of a recent design of a broadband quarter wave plate, based on the Fresnel rhomb concept, and use it in conjunction with a polarization modulation technique to provide direct information of the response of a material to circularly polarized THz radiation; a new capability shown here for the first time. As an example of this technique we study the cyclotron resonance of a 2D electron gas from a AlGaAs-GaAs quantum well. We demonstrate the unique advantages that this technique will bring in the study of novel quantum materials. △ Less

Submitted 12 September, 2019; v1 submitted 14 November, 2018; originally announced November 2018.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. Materials 4, 013803 (2020)

Spin-orbit torques acting upon a perpendicularly-magnetized Py layer

Authors: Tian-Yue Chen, Yongxi Ou, Tsung-Yu Tsai, Robert A. Buhrman, Chi-Feng Pai

Abstract: We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO capping layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dampinglike spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/… ▽ More We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO capping layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dampinglike spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/MgO magnetic heterostructures with perpendicular magnetic anisotropy are characterized. We find that though Ta has a significant spin Hall effect, the DL-SOT efficiencies are small in systems with the Ta/Py interface compared to that obtained from the control sample with the traditional Ta/CoFeB interface. Our results indicate that the spin transparency for the Ta/Py interface is much less than that for the Ta/CoFeB interface, which might be related to the variation of spin mixing conductance for different interfaces. △ Less

Submitted 13 November, 2018; originally announced November 2018.

Journal ref: APL Materials 6, 121101 (2018)

Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3

Authors: Yongxi Ou, Zhe Wang, Celesta S. Chang, Hari P. Nair, Hanjong Paik, Neal Reynolds, D. C. Ralph, D. A. Muller, D. G. Schlom, R. A. Buhrman

Abstract: Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite S… ▽ More Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T) dependent spin Hall conductivity which becomes particularly high at low T, e.g. σ_{SH} \geqslant (\hbar/2e)3x10^{5} Ω^{-1}m^{-1} at 60 K. Below the SrRuO3 ferromagnetic transition, non-standard SOT components develop associated with the magnetic characteristics of the oxide, but these do not dominate as with spin currents from a conventional ferromagnet. Our results establish a new approach for the study of SOI in epitaxial conducting oxide heterostructures and confirm SrRuO3 as a promising candidate material for achieving new and enhanced spintronics functionalities. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 3 Figures

Journal ref: Nano Lett. 2019, 19, 6, 3663-3670

Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators

Authors: D. Nandi, B. Skinner, G. H. Lee, K. -F. Huang, K. Shain, Cui-Zu Chang, Y. Ou, S. -P. Lee, J. Ward, J. S. Moodera, P. Kim, B. I. Halperin, A. Yacoby

Abstract: In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the hybridization gap. Here we show, however, that these insulating states are destroyed by the presence of a large and long-range-correlated disorder potential, wh… ▽ More In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the hybridization gap. Here we show, however, that these insulating states are destroyed by the presence of a large and long-range-correlated disorder potential, which converts the expected insulator into a metal. We perform transport measurements in ultrathin, dual-gated topological insulator films as a function of temperature, gate voltage, and magnetic field, and we observe a metallic-like, non-quantized conductivity, which exhibits a weak antilocalization-like cusp at the low magnetic field and gives way to a nonsaturating linear magnetoresistance at large field. We explain these results by considering the disordered network of electron- and hole-type puddles induced by charged impurities. We argue theoretically that such disorder can produce an insulator-to-metal transition as a function of increasing disorder strength, and we derive a condition on the band gap and the impurity concentration necessary to observe the insulating state. We also explain the linear magnetoresistance in terms of strong spatial fluctuations of the local conductivity, using both numerical simulations and a theoretical scaling argument. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Comments: 13 pages, 14 figures

Journal ref: Phys. Rev. B 98, 214203 (2018)

Interference between two independent multi-mode thermal fields

Authors: Jie Su, Jiaming Li, Liang Cui, Xiaoying Li, Z. Y. Ou

Abstract: We study the property of the field which is a mixing of two multi-mode thermal fields. We accomplish a general theoretical analysis and show that the mode of the mixed field, characterized by its intensity correlation function $g^{(2)}$, is determined by the two-photon interference between the two independent multi-mode thermal fields. Our analysis reveals that the mode structures of the two therm… ▽ More We study the property of the field which is a mixing of two multi-mode thermal fields. We accomplish a general theoretical analysis and show that the mode of the mixed field, characterized by its intensity correlation function $g^{(2)}$, is determined by the two-photon interference between the two independent multi-mode thermal fields. Our analysis reveals that the mode structures of the two thermal fields play an important role in the interference. Comparing with $g^{(2)}$ for one of the individual field with less average mode number, $g^{(2)}$ of the mixed field always decreases due to the change of mode distribution, but the amount of drop depends on the relative overlap between the mode structures of the two thermal fields and their relative strength. Moreover, we verify the theoretical analysis by performing the experiments when the modes of two multi-mode thermal fields are identical, orthogonal and partially overlapped, respectively. The experimental results agree with theoretical predictions. Our investigation is useful for analyzing the signals carried by the intensity correlation of multi-mode thermal fields. △ Less

Submitted 9 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. A 99, 013838 (2019)

Direct evidence of ferromagnetism in a quantum anomalous Hall system

Authors: Wenbo Wang, Yunbo Ou, Chang Liu, Yayu Wang, Ke He, Qi-Kun Xue, Weida Wu

Abstract: Quantum anomalous Hall (QAH) systems are of great fundamental interest and potential application because of their dissipationless conduction without the need for external magnetic field. The QAH effect has been realized in magnetically doped topological insulator thin films. However, full quantization requires extremely low temperature ($T< 50\,$mK) in the initial works, though it has been signifi… ▽ More Quantum anomalous Hall (QAH) systems are of great fundamental interest and potential application because of their dissipationless conduction without the need for external magnetic field. The QAH effect has been realized in magnetically doped topological insulator thin films. However, full quantization requires extremely low temperature ($T< 50\,$mK) in the initial works, though it has been significantly improved with modulation doping or co-doping of magnetic elements. Improved ferromagnetism has been shown in these thin films, yet direct evidence of long-range ferromagnetic order is lacking. Herein, we present direct visualization of long-range ferromagnetic order in thin films of Cr and V co-doped (Bi,Sb)$_2$Te$_3$ using low-temperature magnetic force microscopy with $\textit{in-situ}$ transport. The magnetization reversal process reveals typical ferromagnetic domain behavior, i.e., domain nucleation and possibly domain wall propagation, in contrast to much weaker magnetic signals observed in the end members, possibly due to superparamagnetic behavior. The observed long-range ferromagnetic order resolves one of the major challenges in QAH systems, and paves the way to high-temperature dissipationless conduction by exploring magnetic topological insulators. △ Less

Submitted 20 April, 2018; v1 submitted 13 April, 2018; originally announced April 2018.

Comments: accepted by Nature Physics

Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures

Authors: Yu-Sheng Ou, N. J. Harmon, Patrick Odenthal, R. K. Kawakami, M. E. Flatté, E. Johnston-Halperin

Abstract: We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing u… ▽ More We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing us to simultaneously monitor both localized and itinerant states. For low magnetic fields (below 3 T) the beat frequency between these two excitations evolves linearly, indicating that the nuclear polarization is saturated almost immediately and that the hyperfine coupling to these two states is comparable, despite the 100x enhancement in nuclear polarization provided by the presence of the Fe layer. At higher magnetic fields (above 3 T) the Zeeman energy drives reentrant localization of the photocarriers. Subtracting the constant hyperfine contribution from both sets of data allows us to extract the Lande g-factor for each state and estimate their energy relative to the bottom of the conduction band, yielding -2.16 meV and 17 meV for localized and itinerant states, respectively. This work advances our fundamental understanding of spin-spin interactions between electron and nuclear spin species, as well as between localized and itinerant electronics states, and therefore has implications for future work in both spintronics and quantum information/computation. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Comments: 18 pages, 3 figures

Journal ref: Phys. Rev. B 98, 134444 (2018)

Strong enhancement of the spin Hall effect by spin fluctuations near the Curie point of FexPt1-x alloys

Authors: Yongxi Ou, D. C. Ralph, R. A. Buhrman

Abstract: Robust spin Hall effects (SHE) have recently been observed in non-magnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely side-jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in fe… ▽ More Robust spin Hall effects (SHE) have recently been observed in non-magnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely side-jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1-x alloys near their Curie point, tunable with x. This results in a damping-like spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 (+-) 0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM/FePt interface, and determine the spin diffusion length in these FexPt1-x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications. △ Less

Submitted 19 February, 2018; originally announced February 2018.

Comments: 23 pages, 4 figures. Accepted in Physical Review Letters

Journal ref: Phys. Rev. Lett. 120, 097203, 2018

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

Authors: Debaleena Nandi, Inti Sodemann, Kevin Shain, Gil-Ho Lee, Ko-Fan Huang, Cui-Zu Chang, Yunbo Ou, Shu-Ping Lee, Jonathan Ward, Jagadeesh S. Moodera, Philip Kim, Amir Yacoby

Abstract: We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and… ▽ More We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and is a dominant scattering mechanism in these samples. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport. △ Less

Submitted 15 April, 2018; v1 submitted 28 November, 2017; originally announced November 2017.

Comments: 10 pages, 13 figures

Journal ref: Phys. Rev. B 97, 085151 (2018)

Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces

Authors: Shengjie Shi, Yongxi Ou, S. V. Aradhya, D. C. Ralph, R. A. Buhrman

Abstract: Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale performance with low write error rates. Here we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spi… ▽ More Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale performance with low write error rates. Here we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin memory loss by introducing sub-atomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a beta-W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 x 106 A/cm2, more than a factor of 3 lower than demonstrated in any other spin-orbit-torque magnetic memory device at room temperature, and highly reliable switching with current pulses only 2 ns long. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Applied 9, 011002 (2018)

Enhanced electron dephasing in three-dimensional topological insulators

Authors: Jian Liao, Yunbo Ou, Haiwen Liu, Ke He, Xucun Ma, Qi-Kun Xue, Yongqing Li

Abstract: Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional (3D) topological insulators (TIs). H… ▽ More Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional metals and semiconductors, it remains unclear which mechanism is mainly responsible for electron dephasing in three-dimensional (3D) topological insulators (TIs). Here, we report on using weak antilocalization effect to measure the dephasing rates in highly tunable (Bi,Sb)$_2$Te$_3$ thin films. As the transport is varied from a bulk-conducting regime to surface-dominant transport, the dephasing rate is observed to evolve from a linear temperature dependence to a sublinear power-law dependence. While the former is consistent with the Nyquist electron-electron interactions commonly seen in ordinary 2D systems, the latter leads to enhanced electron dephasing at low temperatures and is attributed to the coupling between the surface states and the localized charge puddles in the bulk of 3D TIs. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Comments: 18 pages, 4 figures, supplemental information available upon request or visit the ncomms website

Journal ref: Nature Communications 8, 16071 (2017)

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

Authors: Zuocheng Zhang, Xiao Feng, Jing Wang, Biao Lian, Jinsong Zhang, Cuizu Chang, Minghua Guo, Yunbo Ou, Yang Feng, Shou-Cheng Zhang, Ke He, Xucun Ma, Qi-Kun Xue, Yayu Wang

Abstract: The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magneti… ▽ More The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. But for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. The in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications. △ Less

Submitted 12 June, 2017; originally announced June 2017.

Comments: 20 pages, 4 figures, to appear in Nature Nanotechnology

Scanning Thermo-ionic Microscopy: Probing Nanoscale Electrochemistry via Thermal Stress-induced Oscillation

Authors: Ehsan Nasr Esfahani, Ahmad Eshghinejad, Yun Ou, Jinjin Zhao, Stuart Adler, Jiangyu Li

Abstract: A universal challenge facing the development of electrochemical materials is our lack of understanding of physical and chemical processes at local length scales in 10-100 nm regime, and acquiring this understanding requires a new generation of imaging techniques. In this article, we introduce the scanning thermo-ionic microscopy (STIM) for probing local electrochemistry at the nanoscale, using for… ▽ More A universal challenge facing the development of electrochemical materials is our lack of understanding of physical and chemical processes at local length scales in 10-100 nm regime, and acquiring this understanding requires a new generation of imaging techniques. In this article, we introduce the scanning thermo-ionic microscopy (STIM) for probing local electrochemistry at the nanoscale, using for imaging the Vegard strain induced via thermal stress excitations. Since ionic oscillation is driven by the stress instead of voltage, the responses are insensitive to the electromechanical, electrostatic, and capacitive effects, and they are immune to global current perturbation, making in-operando testing possible. △ Less

Submitted 18 September, 2017; v1 submitted 17 March, 2017; originally announced March 2017.

Comments: 9 Figures

Journal ref: Microscopy Today 2017 vol: 25 (06) pp: 12-19

Quantitative Nanoscale Mapping of Three-Phase Thermal Conductivities in Filled Skutterudites via Scanning Thermal Microscopy

Authors: Ehsan Nasr Esfahani, Feiyue Ma, Shanyu Wang, Yun Ou, Jihui Yang, Jiangyu Li

Abstract: In the last two decades, a nanostructuring paradigm has been successfully applied in a wide range of thermoelectric materials, resulting in significant reduction in thermal conductivity and superior thermoelectric performance. These advances, however, have been accomplished without directly investigating the local thermoelectric properties, even though local electric current can be mapped with hig… ▽ More In the last two decades, a nanostructuring paradigm has been successfully applied in a wide range of thermoelectric materials, resulting in significant reduction in thermal conductivity and superior thermoelectric performance. These advances, however, have been accomplished without directly investigating the local thermoelectric properties, even though local electric current can be mapped with high spatial resolution. In fact, there still lacks an effective method that links the macroscopic thermoelectric performance to the local microstructures and properties. Here, we show that local thermal conductivity can be mapped quantitatively with good accuracy, nanometer resolution, and one-to-one correspondence to the microstructure using a three-phase skutterudite as a model system. Scanning thermal microscopy combined with finite element simulations demonstrate close correlation between sample conductivity and probe resistance, enabling us to distinguish thermal conductivities spanning orders of magnitude, yet resolving thermal variation across a phase interface with small contrast. The technique thus provides a powerful tool to correlate local thermal conductivities, microstructures, and macroscopic properties for nanostructured materials in general, and nanostructured thermoelectrics in particular. △ Less

Submitted 8 May, 2017; v1 submitted 7 February, 2017; originally announced February 2017.

Journal ref: National Science Review 2017

Strong perpendicular magnetic anisotropy energy density at Fe alloy/HfO2 interfaces

Authors: Yongxi Ou, D. C. Ralph, R. A. Buhrman

Abstract: We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by depositing one to two atomic layers of Hf onto the Fe alloy before the subsequent rf sputter deposition of the MgO layer. This Hf layer is fully oxidized during… ▽ More We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by depositing one to two atomic layers of Hf onto the Fe alloy before the subsequent rf sputter deposition of the MgO layer. This Hf layer is fully oxidized during the subsequent deposition of the MgO layer, as confirmed by X-ray photoelectron spectroscopy measurements. As the result a strong interfacial perpendicular anisotropy energy density can be achieved without any post-fabrication annealing treatment, for example 1.7 erg/cm^2 for the Ta/Fe60Co20B20/HfO2/MgO heterostructure. Depending on the HM, further enhancements of the PMA can be realized by thermal annealing to at least 400C. We show that ultra-thin HfO2 layers offer a range of options for enhancing the magnetic properties of magnetic heterostructures for spintronics applications. △ Less

Submitted 14 January, 2017; originally announced January 2017.

Comments: 16 pages; 3 figures

Journal ref: Appl. Phys. Lett. 110, 192403 (2017)

Observation of Chirality Transition of Quasiparticles at Stacking Solitons in Trilayer Graphene

Authors: Long-Jing Yin, Wen-Xiao Wang, Yu Zhang, Yang-Yang Ou, Hao-Ting Zhang, Cai-Yun Shen, Lin He

Abstract: Trilayer graphene (TLG) exhibits rich novel electronic properties and extraordinary quantum Hall phenomena owning to enhanced electronic interactions and tunable chirality of its quasiparticles. Here, we report direct observation of chirality transition of quasiparticles at stacking solitons of TLG via spatial-resolved Landau level spectroscopy. The one-dimensional stacking solitons with width of… ▽ More Trilayer graphene (TLG) exhibits rich novel electronic properties and extraordinary quantum Hall phenomena owning to enhanced electronic interactions and tunable chirality of its quasiparticles. Here, we report direct observation of chirality transition of quasiparticles at stacking solitons of TLG via spatial-resolved Landau level spectroscopy. The one-dimensional stacking solitons with width of the order of 10 nm separate adjacent Bernal-stacked TLG and rhombohedral-stacked TLG. By using high field tunneling spectra of scanning tunneling microscopy, we measured Landau quantization in both the Bernal-stacked TLG and the rhombohedral-stacked TLG and, importantly, we observed evolution of quasiparticles between the chiral degree l = 1&2 and l = 3 across the stacking domain wall solitons. Our experiment indicates that such a chirality transition occurs smoothly, accompanying the transition of the stacking orders of TLG, around the domain wall solitons. This result demonstrates the important and hitherto neglected relationship between the crystallographic stacking order and the chirality of quasiparticles in graphene systems. △ Less

Submitted 31 August, 2016; originally announced September 2016.

Comments: 4 Figures

Journal ref: Phys. Rev. B 95, 081402 (2017)

On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures

Authors: Yongxi Ou, Chi-Feng Pai, Shengjie Shi, D. C. Ralph, R. A. Buhrman

Abstract: We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer suffici… ▽ More We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/Oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface. △ Less

Submitted 15 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 140414 (2016)

Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy

Authors: N. Ha, T. Mano, Y. -N. Wu, Y. -W. Ou, S. -J. Cheng, Y. Sakuma, K. Sakoda, T. Kuroda

Abstract: By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. W… ▽ More By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 micrometer by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of barrier choice. △ Less

Submitted 22 July, 2016; originally announced July 2016.

Journal ref: Appl. Phys. Express 9, 101201 (2016)

Gate-Variable Mid-Infrared Optical Transitions in a $(Bi_{1-x}Sb_x)_2Te_3$ Topological Insulator

Authors: William S. Whitney, Victor W. Brar, Yunbo Ou, Yinming Shao, Artur R. Davoyan, D. N. Basov, Ke He, Qi-Kun Xue, Harry A. Atwater

Abstract: We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer of topological ins… ▽ More We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi1-xSbx)2Te3, and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes. △ Less

Submitted 30 August, 2016; v1 submitted 13 July, 2016; originally announced July 2016.

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

Authors: Cui-Zu Chang, Jinsong Zhang, Xiao Feng, Jie Shen, Zuocheng Zhang, Minghua Guo, Kang Li, Yunbo Ou, Pang Wei, Li-Li Wang, Zhong-Qing Ji, Yang Feng, Shuaihua Ji, Xi Chen, Jinfeng Jia, Xi Dai, Zhong Fang, Shou-Cheng Zhang, Ke He, Yayu Wang, Li Lu, Xu-Cun Ma, Qi-Kun Xu

Abstract: The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predi… ▽ More The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics. △ Less

Submitted 27 May, 2016; originally announced May 2016.

Comments: 11 pages, 4 figures

Journal ref: Science 340, 167 (2013)

Strong Spin Hall Effect in the Antiferromagnet PtMn

Authors: Yongxi Ou, Shengjie Shi, D. C. Ralph, R. A. Buhrman

Abstract: Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall e… ▽ More Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall effect (AHE) and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems. By using interface engineering to reduce the 'spin memory loss' we obtain a spin torque efficiency as large as 0.24. This is more than twice the previously reported spin torque efficiency for PtMn. We also find that the apparent spin diffusion length in PtMn is surprisingly long (about 2.3nm). △ Less

Submitted 25 March, 2016; originally announced March 2016.

Comments: 30 pages, 7 figures, 1 Table

Journal ref: Phys. Rev. B 93, 220405 (2016)