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Reducing number fluctuations in an ultracold atomic sample using Faraday rotation and iterative feedback
Authors:
R. Thomas,
J. S. Otto,
M. Chilcott,
A. B. Deb,
N. Kjærgaard
Abstract:
We demonstrate a method to reduce number fluctuations in an ultracold atomic sample using real-time feedback. By measuring the Faraday rotation of an off-resonant probe laser beam with a pair of avalanche photodetectors in a polarimetric setup we produce a proxy for the number of atoms in the sample. We iteratively remove a fraction of the excess atoms from the sample to converge on a target proxy…
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We demonstrate a method to reduce number fluctuations in an ultracold atomic sample using real-time feedback. By measuring the Faraday rotation of an off-resonant probe laser beam with a pair of avalanche photodetectors in a polarimetric setup we produce a proxy for the number of atoms in the sample. We iteratively remove a fraction of the excess atoms from the sample to converge on a target proxy value in a way that is insensitive to environmental perturbations and robust to errors in light polarization. Using absorption imaging for out-of-loop verification, we demonstrate a reduction in the number fluctuations from $3\%$ to $0.45\%$ for samples at a temperature of 16.4 $μ$K over the time-scale of several hours which is limited by temperature fluctuations, beam pointing noise, and photon shot noise.
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Submitted 15 September, 2021; v1 submitted 2 February, 2021;
originally announced February 2021.
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Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
Authors:
Markus Morgenstern,
Christian Pauly,
Jens Kellner,
Marcus Liebmann,
Marco Pratzer,
Gustav Bihlmayer,
Markus Eschbach,
Lukacz Plucinski,
Sebastian Otto,
Bertold Rasche,
Michael Ruck,
Manuel Richter,
Sven Just,
Felix Luepke,
Bert Voigtlaender
Abstract:
We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover no…
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We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.
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Submitted 2 February, 2020;
originally announced February 2020.
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Mapping the band structure of GeSbTe phase change alloys around the Fermi level
Authors:
Jens Kellner,
Gustav Bihlmayer,
Marcus Liebmann,
Sebastian Otto,
Christian Pauly,
Jos Emiel Boschker,
Valeria Bragaglia,
Stefano Cecchi,
Rui Ning Wang,
Volker L. Deringer,
Philipp Küppers,
Priyamvada Bhaskar,
Evangelos Golias,
Jaime Sánchez-Barriga,
Richard Dronskowski,
Thomas Fauster,
Oliver Rader,
Raffaella Calarco,
Markus Morgenstern
Abstract:
Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence…
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Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.
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Submitted 17 January, 2018; v1 submitted 29 August, 2017;
originally announced August 2017.
