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Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
Authors:
A. Yu. Vyazovskaya,
M. Bosnar,
E. V. Chulkov,
M. M. Otrokov
Abstract:
This short review appears on the occasion of the fifth anniversary of discovery of intrinsic magnetic topological insulators (MTIs) of the MnBi${}_2$Te${}_4$ family, which have attracted a great deal of attention recently. This family of materials has been discovered in attempts to increase the observation temperature of the quantum anomalous Hall effect as well as to facilitate the eventual reali…
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This short review appears on the occasion of the fifth anniversary of discovery of intrinsic magnetic topological insulators (MTIs) of the MnBi${}_2$Te${}_4$ family, which have attracted a great deal of attention recently. This family of materials has been discovered in attempts to increase the observation temperature of the quantum anomalous Hall effect as well as to facilitate the eventual realization of the topological magnetoelectric effect. Therefore, we first briefly introduce these effects, then describe the experimental state-of-the-art in the MTIs field just prior to MnBi${}_2$Te${}_4$ appearance, after which we discuss the basic properties of this material and its family. Finally, we overview the exciting progress made during five years of intense research in this field.
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Submitted 2 May, 2025;
originally announced May 2025.
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Gate-controlled proximity effect in superconductor/ferromagnet van der Waals heterostructures
Authors:
G. A. Bobkov,
K. A. Bokai,
M. M. Otrokov,
A. M. Bobkov,
I. V. Bobkova
Abstract:
The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e. the nanoscale-penetration of electronic correlations from one material to another. In a few layer van der Waals (vdW) heterostructures the proximity regions occupy the entire system. Here…
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The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e. the nanoscale-penetration of electronic correlations from one material to another. In a few layer van der Waals (vdW) heterostructures the proximity regions occupy the entire system. Here we demonstrate that the physics of magnetic and superconducting proximity effects in 2D superconductor/ferromagnet vdW heterostructures is determined by the effects of interface hybridization of the electronic spectra of both materials. The degree of hybridization can be adjusted by gating, which makes it possible to achieve a high degree of controllability of the proximity effect. In particular, we show that this allows for electrical switching of superconductivity in such structures on and off, as well as for control of the amplitude and sign of the Zeeman splitting of superconducting spectra, opening interesting opportunities for spintronics and spin caloritronics.
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Submitted 20 October, 2024; v1 submitted 13 May, 2024;
originally announced May 2024.
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Unveiling the inter-layer interaction in a 1H/1T TaS$_2$ van de Waals heterostructure
Authors:
Cosme G. Ayani,
M. Bosnar,
F. Calleja,
Andrés Pinar Solé,
O. Stetsovych,
Iván M. Ibarburu,
Clara Rebanal,
Manuela Garnica,
Rodolfo Miranda,
M. M. Otrokov,
M. Ondráček,
Pavel Jelínek,
A. Arnau,
Amadeo L. Vázquez de Parga
Abstract:
This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The con…
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This study delves into the intriguing properties of 1H/1T-TaS$_2$ van der Waals heterostructure, focusing on the transparency of the 1H layer to the Charge Density Wave of the underlying 1T layer. Despite the sizable interlayer separation and metallic nature of the 1H layer, positive bias voltages result in a pronounced superposition of the 1T charge density wave structure on the 1H layer. The conventional explanation relying on tunneling effects proves insufficient. Through a comprehensive investigation combining lowtemperature scanning tunneling microscopy, scanning tunneling spectroscopy, non-contact atomic force microscopy, and firstprinciples calculations, we propose an alternative interpretation. The transparency effect arises from a weak yet substantial electronic coupling between the 1H and 1T layers, challenging prior understanding of the system. Our results highlight the critical role played by interlayer electronic interactions in van der Waals heterostructures to determine the final ground states of the systems.
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Submitted 26 February, 2024;
originally announced February 2024.
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Ubiquitous order-disorder transition in the Mn antisite sublattice of the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ magnetic topological insulators
Authors:
M. Sahoo,
I. J. Onuorah,
L. C. Folkers,
E. V. Chulkov,
M. M. Otrokov,
Z. S. Aliev,
I. R. Amiraslanov,
A. U. B. Wolter,
B. Büchner,
L. T. Corredor,
Ch. Wang,
Z. Salman,
A. Isaeva,
R. De Renzi,
G. Allodi
Abstract:
Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this mater…
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Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this material platform is enabled by manganese-pnictogen intermixing, whose amounts and distribution patterns are controlled by synthetic conditions. Positive implication of the strong intermixing in MnSb$_2$Te$_4$ is the interlayer exchange coupling switching from antiferromagnetic to ferromagnetic, and the increasing magnetic critical temperature. On the other side, intermixing also implies atomic disorder which may be detrimental for applications. Here, we employ nuclear magnetic resonance and muon spin spectroscopy, sensitive local probe techniques, to scrutinize the impact of the intermixing on the magnetic properties of (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$. Our measurements not only confirm the opposite alignment between the Mn magnetic moments on native sites and antisites in the ground state of MnSb$_2$Te$_4$, but for the first time directly show the same alignment in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ with n = 0, 1 and 2. Moreover, for all compounds, we find the static magnetic moment of the Mn antisite sublattice to disappear well below the intrinsic magnetic transition temperature, leaving a homogeneous magnetic structure undisturbed by the intermixing. Our findings provide a microscopic understanding of the crucial role played by Mn-Bi intermixing in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ and offer pathways to optimizing the magnetic gap in its surface states.
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Submitted 9 February, 2024;
originally announced February 2024.
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Spin wave excitations in low dimensional systems with large magnetic anisotropy
Authors:
F. Delgado,
M. M. Otrokov,
A. Arnau
Abstract:
The low energy excitation spectrum of a two-dimensional ferromagnetic material is dominated by single-magnon excitations that show a gapless parabolic dispersion relation with the spin wave vector. This occurs as long as magnetic anisotropy and anisotropic exchange are negligible compared to isotropic exchange. However, to maintain magnetic order at finite temperatures, it is necessary to have siz…
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The low energy excitation spectrum of a two-dimensional ferromagnetic material is dominated by single-magnon excitations that show a gapless parabolic dispersion relation with the spin wave vector. This occurs as long as magnetic anisotropy and anisotropic exchange are negligible compared to isotropic exchange. However, to maintain magnetic order at finite temperatures, it is necessary to have sizable anisotropy to open a gap in the spin wave excitation spectrum. We consider four real two-dimensional systems for which ferromagnetic order at finite temperature has been observed or predicted. Density functional theory calculations of the total energy differences for different spin configurations permit us to extract the relevant parameters and connect them with a spin Hamiltonian. The corresponding values of the Curie temperature are estimated using a simple model and found to be mostly determined by the value of the isotropic exchange. The exchange and anisotropy parameters are used in a toy model of finite-size periodic chains to study the low-energy excitation spectrum, including single-magnon and two-magnon excitations. At low energies we find that single-magnon excitations appear in the spectrum together with two-magnon excitations. These excitations present a gap that grows particularly for large values of the magnetic anisotropy or anisotropic exchange, relative to the isotropic exchange.
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Submitted 24 October, 2023;
originally announced October 2023.
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High Chern number van der Waals magnetic topological multilayers MnBi$_2$Te$_4$/hBN
Authors:
Mihovil Bosnar,
Alexandra Yu. Vyazovskaya,
Evgeniy K. Petrov,
Evgueni V. Chulkov,
Mikhail M. Otrokov
Abstract:
Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, b…
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Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution of this problem so far, with the majority of existing Chern insulators showing $C=1$. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-$C$ Chern insulator state in MnBi$_2$Te$_4$/hBN van der Waals multilayer heterostructures. We show that a stack of $n$ MnBi$_2$Te$_4$ films with $C=1$ intercalated by hBN monolayers gives rise to a high Chern number state with $C=n$, characterized by $n$ chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance $S_{xy}= C e^2/h$. Our results therefore pave way to practical high-$C$ quantized Hall systems.
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Submitted 27 December, 2022;
originally announced December 2022.
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Ferromagnetism on an atom-thick and extended 2D-metal-organic framework
Authors:
Jorge Lobo-Checa,
Leyre Hernández-López,
Mikhail M. Otrokov,
Ignacio Piquero-Zulaica,
Adriana Candia,
Pierluigi Gargiani,
David Serrate,
Manuel Valvidares,
Jorge Cerdà,
Andrés Arnau,
Fernando Bartolomé
Abstract:
Ferromagnetism (FM) is the cornerstone of permanent magnets, data storage and other technologies that directly impact our everyday life by their implementation in standard applications and devices. When downscaling bulk materials into their two-dimensional (2D) magnetic isotropic form, the Mermin-Wagner theorem precludes this collective state mediated by short-range exchange interactions at finite…
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Ferromagnetism (FM) is the cornerstone of permanent magnets, data storage and other technologies that directly impact our everyday life by their implementation in standard applications and devices. When downscaling bulk materials into their two-dimensional (2D) magnetic isotropic form, the Mermin-Wagner theorem precludes this collective state mediated by short-range exchange interactions at finite temperatures. Interestingly, this prediction fails when significant magnetic anisotropy is present in the material, as recently demonstrated in single layered van der Waals crystals. Before the latter, single layer metal-organic frameworks (MOFs) grown on metallic supports were one of the earliest candidates for achieving 2D-FM. Such high expectations were based on the chemical and spacing control of the 2D-MOF magnetic centers, the tunability of the organic linkers and the rich self-assembled architectures displayed. However, despite many attempts, extended FM in 2D-MOFs has been experimentally elusive. In this work, we demonstrate that extended, cooperative FM takes place in an atom thick 2D-MOF consisting of 9,10-dicyanoanthracene (DCA) molecules and Fe adatoms grown on Au(111). We show this by means of an experimental multitechnique approach that is endorsed by state-of-the art first-principles calculations. Particularly, this 2D ferromagnet follows a first order transition with TC ~ 35 K, which is driven by exchange interactions mainly through the molecular linkers (J=2 meV) and exhibits an out-of-plane square-like hysteresis loop. The strict periodicity of our 2D-MOF allows us to envision the fabrication of ultra-dense single atom magnetic memories and opens the way to explore periodic magnetic 2D-models that could considerably increase the fundamental superparamagnetic limit.
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Submitted 2 February, 2023; v1 submitted 29 September, 2022;
originally announced September 2022.
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Crystal structure and Raman active lattice vibrations of magnetic topological insulators MnBi2Te4 n(Bi2Te3) (n = 0, 1, . . . , 6)
Authors:
I. R. Amiraslanov,
Z. S. Aliev,
P. A. Askerova,
E. H. Alizade,
Y. N. Aliyeva,
N. A. Abdullayev,
Z. A. Jahangirli,
M. M. Otrokov,
N. T. Mamedov,
E. V. Chulkov
Abstract:
Further to the structure of the intrinsic magnetic topological insulators MnBi2Te4 n(Bi2Te3) with n<4, where index n is the number of quintuple Te-Bi-Te-Bi-Te building blocks inserted between the neighboring septuple Te-Bi-Te-Mn-Te-Bi-Te building blocks, the structure of the members with n=4, 5 and 6 was studied using X-ray powder diffraction. The unit cell parameters and atomic positions were cal…
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Further to the structure of the intrinsic magnetic topological insulators MnBi2Te4 n(Bi2Te3) with n<4, where index n is the number of quintuple Te-Bi-Te-Bi-Te building blocks inserted between the neighboring septuple Te-Bi-Te-Mn-Te-Bi-Te building blocks, the structure of the members with n=4, 5 and 6 was studied using X-ray powder diffraction. The unit cell parameters and atomic positions were calculated. The obtained and available structural data were summarized to show that the crystal structure of all members of MnBi2Te4 n(Bi2Te3) follows the cubic close packing principle, independently of the space group of the given member. Confocal Raman spectroscopy was then applied. Comparative analysis of the number, frequency, symmetry, and broadening of the vibration modes responsible for the lines in the Raman spectra of the systems with n=1,. . . ,6, as well as MnBi2Te4 (n=0) and Bi2Te3 (n=infinity) has shown that lattice dynamics of MnBi2Te4 n(Bi2Te3) with n>0 overwhelmingly dominates by the cooperative atomic displacements in the quintuple building blocks.
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Submitted 20 July, 2022;
originally announced July 2022.
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Native point defects and their implications for the Dirac point gap at MnBi$_2$Te$_4$(0001)
Authors:
M. Garnica,
M. M. Otrokov,
P. Casado Aguilar,
I. I. Klimovskikh,
D. Estyunin,
Z. S. Aliev,
I. R. Amiraslanov,
N. A. Abdullayev,
V. N. Zverev,
M. B. Babanly,
N. T. Mamedov,
A. M. Shikin,
A. Arnau,
A. L. Vázquez de Parga,
E. V. Chulkov,
R. Miranda
Abstract:
The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) u…
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The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) using scanning tunneling microscopy/spectroscopy (STM/S), micro($μ$)-laser angle resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. Our topographic STM images clearly reveal features corresponding to point defects in the surface Te and subsurface Bi layers that we identify with the aid of STM simulations as Bi$_\text{Te}$ antisites (Bi atoms at the Te sites) and Mn$_\text{Bi}$ substitutions (Mn atoms at the Bi sites), respectively. X-ray diffraction (XRD) experiments further evidence the presence of cation (Mn-Bi) intermixing. Altogether, this affects the distribution of the Mn atoms, which, inevitably, leads to a deviation of the MnBi$_2$Te$_4$ magnetic structure from that predicted for the ideal crystal structure. Our transport measurements suggest that the degree of this deviation varies from sample to sample. Consistently, the ARPES/STS experiments reveal that the Dirac point gap of the topological surface state is different for different samples/sample cleavages. Our DFT surface electronic structure calculations show that, due to the predominant localization of the topological surface state near the Bi layers, Mn$_\text{Bi}$ defects can cause a strong reduction of the MnBi$_2$Te$_4$ Dirac point gap, given the recently proved antiparallel alignment of the Mn$_\text{Bi}$ moments with respect to those of the Mn layer. Our results provide a key to puzzle out the MnBi$_2$Te$_4$ Dirac point gap mystery.
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Submitted 3 September, 2021;
originally announced September 2021.
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Sample-dependent Dirac point gap in MnBi$_2$Te$_4$ and its response to the applied surface charge: a combined photoemission and ab initio study
Authors:
A. M. Shikin,
D. A. Estyunin,
N. L. Zaitsev,
D. Glazkova,
I. I. Klimovskikh,
S. Filnov,
A. G. Rybkin,
E. F. Schwier,
S. Kumar,
A. Kimura,
N. Mamedov,
Z. Aliev,
M. B. Babanly,
K. Kokh,
O. E. Tereshchenko,
M. M. Otrokov,
E. V. Chulkov,
K. A. Zvezdin,
A. K. Zvezdin
Abstract:
Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimen…
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Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi$_2$Te$_4$ Dirac cone. Here, using micro($μ$)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi$_2$Te$_4$ samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10-16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi$_2$Te$_4$ samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Further, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi$_2$Te$_4$ DP gap size.
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Submitted 9 July, 2021;
originally announced July 2021.
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Topological magnetic materials of the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ van der Waals compounds family
Authors:
S. V. Eremeev,
I. P. Rusinov,
Yu. M. Koroteev,
A. Yu. Vyazovskaya,
M. Hoffmann,
P. M. Echenique,
A. Ernst,
M. M. Otrokov,
E. V. Chulkov
Abstract:
Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the f…
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Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the first three members of the family, i.e. MnSb$_2$Te$_4$, ($n=0$), MnSb$_4$Te$_7$, ($n=1$), and MnSb$_6$Te$_{10}$, ($n=2$), are 3D antiferromagnetic topological insulators (AFMTIs), while for $n \geq 3$ a special phase is formed, in which a nontrivial topological order coexists with a partial magnetic disorder in the system of the decoupled 2D ferromagnets, whose magnetizations point randomly along the third direction. Furthermore, due to a weak interlayer exchange coupling, these materials can be field-driven into the FM Weyl semimetal ($n=0$) or FM axion insulator states ($n \geq 1$). Finally, in two dimensions we reveal these systems to show intrinsic quantum anomalous Hall and AFM axion insulator states, as well as quantum Hall state, achieved under external magnetic field, but without Landau levels. Our results provide a solid computational proof that MnSb$_2$Te$_4$, is not topologically trivial as was previously believed that opens possibilities of realization of a wealth of topologically-nontrivial states in the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family.
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Submitted 4 February, 2021;
originally announced February 2021.
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Origin of the Large Perpendicular Magnetic Anisotropy in Nanometer-thick Epitaxial Graphene/Co/Heavy Metal Heterostructures
Authors:
M. Blanco-Rey,
P. Perna,
A. Gudin,
J. M. Diez,
A. Anadon Leticia de Melo Costa,
Manuel Valvidares,
Pierluigi Gargiani,
Alejandra Guedeja-Marron,
Mariona Cabero,
M. Varela,
C. Garcia-Fernandez,
M. M. Otrokov,
J. Camarero,
R. Miranda,
A. Arnau,
J. I. Cerda
Abstract:
A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which ac…
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A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which acts as a surfactant that kinetically stabilizes the pseudomorphic growth of highly perfect Co face-centered tetragonal ($fct$) films, with a reduced number of stacking faults as the only structural defect observable by high resolution scanning transmission electron microscopy (HR-STEM). Magneto-optic Kerr effect (MOKE) measurements show that such heterostructures present PMA up to large Co critical thicknesses of about 4~nm (20~ML) and 2~nm (10~ML) for Pt and Ir substrates, respectively, while X-ray magnetic circular dichroism (XMCD) measurements show an inverse power law of the anistropy of the orbital moment with Co thickness, reflecting its interfacial nature, that changes sign at about the same critical values. First principles calculations show that, regardless of the presence of graphene, ideal Co $fct$ films on HM buffers do not sustain PMAs beyond around 6~MLs due to the in-plane contribution of the inner bulk-like Co layers. The large experimental critical thicknesses sustaining PMA can only be retrieved by the inclusion of structural defects that promote a local $hcp$ stacking such as twin boundaries or stacking faults. Remarkably, a layer resolved analysis of the orbital momentum anisotropy reproduces its interfacial nature, and reveals that the Gr/Co interface contribution is comparable to that of the Co/Pt(Ir).
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Submitted 11 December, 2020;
originally announced December 2020.
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Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K
Authors:
S. Wimmer,
J. Sánchez-Barriga,
P. Küppers,
A. Ney,
E. Schierle,
F. Freyse,
O. Caha,
J. Michalicka,
M. Liebmann,
D. Primetzhofer,
M. Hoffmann,
A. Ernst,
M. M. Otrokov,
G. Bihlmayer,
E. Weschke,
B. Lake,
E. V. Chulkov,
M. Morgenstern,
G. Bauer,
G. Springholz,
O. Rader
Abstract:
Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intri…
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Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intrinsic magnetic topological insulators with A1B2C4 stoichiometry. However, the first representative, MnBi2Te4, is antiferromagnetic with 25 K Néel temperature and strongly n-doped. Here, we show that p-type MnSb2Te4, previously considered topologically trivial, is a ferromagnetic topological insulator in the case of a few percent of Mn excess. It shows (i) a ferromagnetic hysteresis with record high Curie temperature of 45-50 K, (ii) out-of-plane magnetic anisotropy and (iii) a two-dimensional Dirac cone with the Dirac point close to the Fermi level which features (iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy and (v) a magnetically induced band gap that closes at the Curie temperature as demonstrated by scanning tunneling spectroscopy. Moreover, it displays (vi) a critical exponent of magnetization beta~1, indicating the vicinity of a quantum critical point. Ab initio band structure calculations reveal that the slight excess of Mn that substitutionally replaces Sb atoms provides the ferromagnetic interlayer coupling. Remaining deviations from the ferromagnetic order, likely related to this substitution, open the inverted bulk band gap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators.
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Submitted 25 April, 2021; v1 submitted 13 November, 2020;
originally announced November 2020.
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Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi$_2$Te$_4$
Authors:
Bing Xu,
Y. Zhang,
E. H. Alizade,
Z. A. Jahangirli,
F. Lyzwa,
E. Sheveleva,
P. Marsik,
Y. K. Li,
Y. G. Yao,
Z. W. Wang,
B. Shen,
Y. M. Dai,
V. Kataev,
M. M. Otrokov,
E. V. Chulkov,
N. T. Mamedov,
Christian Bernhard
Abstract:
With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The m…
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With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature dependent multi-band low-energy response that has important implications for the study of the surface states and device applications.
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Submitted 19 September, 2020;
originally announced September 2020.
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Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
D. A. Estyunin,
I. I. Klimovskikh,
S. O. Filnov,
E. F. Schwier,
S. Kumar,
K. Myamoto,
T. Okuda,
A. Kimura,
K. Kuroda,
K. Yaji,
S. Shin,
Y. Takeda,
Y. Saitoh,
Z. S. Aliev,
N. T. Mamedov,
I. R. Amiraslanov,
M. B. Babanly,
M. M. Otrokov,
S. V. Eremeev,
E. V. Chulkov
Abstract:
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (1…
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Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.
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Submitted 9 April, 2020;
originally announced April 2020.
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Domain wall induced spin-polarized flat bands in antiferromagnetic topological insulators
Authors:
Evgeniy K. Petrov,
Vladimir N. Men'shov,
Igor P. Rusinov,
Martin Hoffmann,
Arthur Ernst,
Mikhail M. Otrokov,
Vitalii K. Dugaev,
Tatiana V. Menshchikova,
Evgueni V. Chulkov
Abstract:
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have b…
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A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Néel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications.
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Submitted 17 January, 2020;
originally announced January 2020.
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Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family
Authors:
I. I. Klimovskikh,
M. M. Otrokov,
D. Estyunin,
S. V. Eremeev,
S. O. Filnov,
A. Koroleva,
E. Shevchenko,
V. Voroshnin,
I. P. Rusinov,
M. Blanco-Rey,
M. Hoffmann,
Z. S. Aliev,
M. B. Babanly,
I. R. Amiraslanov,
N. A. Abdullayev,
V. N. Zverev,
A. Kimura,
O. E. Tereshchenko,
K. A. Kokh,
L. Petaccia,
G. Di Santo,
A. Ernst,
P. M. Echenique,
N. T. Mamedov,
A. M. Shikin
, et al. (1 additional authors not shown)
Abstract:
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and ma…
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Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.
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Submitted 25 October, 2019;
originally announced October 2019.
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Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$
Authors:
R. C. Vidal,
H. Bentmann,
T. R. F. Peixoto,
A. Zeugner,
S. Moser,
C. H. Min,
S. Schatz,
K. Kissner,
M. Ünzelmann,
C. I. Fornari,
H. B. Vasili,
M. Valvidares,
K. Sakamoto,
D. Mondal,
J. Fujii,
I. Vobornik,
S. Jung,
C. Cacho,
T. K. Kim,
R. J. Koch,
C. Jozwiak,
A. Bostwick,
J. D. Denlinger,
E. Rotenberg,
J. Buck
, et al. (10 additional authors not shown)
Abstract:
The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals…
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The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.
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Submitted 12 September, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnBi_2Te_4}$ films
Authors:
Mikhail M. Otrokov,
Igor P. Rusinov,
María Blanco-Rey,
Martin Hoffmann,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Arthur Ernst,
Pedro M. Echenique,
Andrés Arnau,
Evgueni V. Chulkov
Abstract:
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple lay…
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Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of $\mathrm{MnBi_2Te_4}$ is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide bandgap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, $\mathrm{MnBi_2Te_4}$ is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.
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Submitted 11 October, 2018;
originally announced October 2018.
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Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
Authors:
Mikhail M. Otrokov,
Tatiana V. Menshchikova,
Maia G. Vergniory,
Igor P. Rusinov,
Alexandra Yu. Vyazovskaya,
Yury M. Koroteev,
Gustav Bihlmayer,
Arthur Ernst,
Pedro M. Echenique,
Andrés Arnau,
Evgueni V. Chulkov
Abstract:
An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these…
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An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.
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Submitted 29 September, 2018;
originally announced October 2018.
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Competing rhombohedral and monoclinic crystal structures in Mn$Pn_2Ch_4$ compounds: an {\em ab-initio} study
Authors:
S. V. Eremeev,
M. M. Otrokov,
E. V. Chulkov
Abstract:
Based on the relativistic spin-polarized density functional theory calculations we investigate the crystal structure, electronic and magnetic properties of a family MnPn2Ch4 compounds, where pnictogen metal atoms (Pn) are Sb and Bi; chalcogens (Ch) are Se, Te. We show that in the series the compounds of this family with heavier elements prefer to adopt rhombohedral crystal structure composed of we…
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Based on the relativistic spin-polarized density functional theory calculations we investigate the crystal structure, electronic and magnetic properties of a family MnPn2Ch4 compounds, where pnictogen metal atoms (Pn) are Sb and Bi; chalcogens (Ch) are Se, Te. We show that in the series the compounds of this family with heavier elements prefer to adopt rhombohedral crystal structure composed of weakly bonded septuple monoatomic layers while those with lighter elements tend to be in the monoclinic structure. Irrespective of the crystal structure all compounds of the MnPn2Ch4 series demonstrate a weak energy gain (of a few meV per formula unit or even smaller than meV) for antiferromagnetic (AFM) coupling for magnetic moments on Mn atoms with respect to their ferromagnetic (FM) state. For rhombohedral structures the interlayer AFM coupling is preferable while in monoclinic phases intralayer AFM configuration with ferromagnetic ordering along the Mn chain and antiferromagnetic ordering between the chains has a minimum energy. Over the series the monoclinic compounds are characterized by substantially wider bandgap than compounds with rhombohedral structure.
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Submitted 27 September, 2018;
originally announced September 2018.
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Prediction and observation of the first antiferromagnetic topological insulator
Authors:
Mikhail M. Otrokov,
Ilya I. Klimovskikh,
Hendrik Bentmann,
Dmitry Estyunin,
Alexander Zeugner,
Ziya S. Aliev,
Sebastian Gass,
Anja U. B. Wolter,
Alexandra V. Koroleva,
Alexander M. Shikin,
María Blanco-Rey,
Martin Hoffmann,
Igor P. Rusinov,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Yury M. Koroteev,
V. M. Kuznetsov,
F. Freyse,
J. Sánchez-Barriga,
Imamaddin R. Amiraslanov,
Mahammad B. Babanly,
Nazim T. Mamedov,
Nadir A. Abdullayev,
Vladimir N. Zverev,
Alexey Alfonsov
, et al. (19 additional authors not shown)
Abstract:
Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of d…
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Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of doping nonmagnetic TIs with 3d transition metal elements, however, such an approach leads to strongly inhomogeneous magnetic and electronic properties of these materials, restricting the observation of important effects to very low temperatures. Finding intrinsic MTI, i.e. a stoichiometric well-ordered magnetic compound, could be an ideal solution to these problems, but no such material was observed to date. Here, using density functional theory we predict and further confirm by means of structural, transport, magnetic, angle- and spin-resolved photoemission spectroscopy measurements the realization of the antiferromagnetic (AFM) TI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S = ΘT_{1/2}$, giving rise to the $Z_2$ topological classification of AFM insulators. We find $Z_2 = 1$ for MnBi$_2$Te$_4$, which confirms its topologically nontrivial nature. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ exhibits a giant bandgap in the topological surface state as evidenced by ab initio calculations and photoemission measurements. These results culminate almost a decade-long search of an AFMTI, predicted in 2010. Furthermore, MnBi$_2$Te$_4$ is the first intrinsic magnetic TI realized experimentally.
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Submitted 21 January, 2025; v1 submitted 19 September, 2018;
originally announced September 2018.
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Instability of the topological surface state in Bi$_2$Se$_3$ upon deposition of gold
Authors:
A. Polyakov,
C. Tusche,
M. Ellguth,
E. D. Crozier,
K. Mohseni,
M. M. Otrokov,
X. Zubizarreta,
M. G. Vergniory,
M. Geilhufe,
E. V. Chulkov,
A. Ernst,
H. L. Meyerheim,
S. S. P. Parkin
Abstract:
Momentum resolved photoemission spectroscopy indicates the instability of the Dirac surface state upon deposition of gold on the (0001) surface of the topological insulator Bi$_2$Se$_3$. Based on the structure model derived from extended x-ray absorption fine structure experiments showing that gold atoms substitute bismuth atoms, first principles calculations provide evidence that a gap appears du…
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Momentum resolved photoemission spectroscopy indicates the instability of the Dirac surface state upon deposition of gold on the (0001) surface of the topological insulator Bi$_2$Se$_3$. Based on the structure model derived from extended x-ray absorption fine structure experiments showing that gold atoms substitute bismuth atoms, first principles calculations provide evidence that a gap appears due to hybridization of the surface state with gold d-states near the Fermi level. Our findings provide new insights into the mechanisms affecting the stability of the surface state.
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Submitted 10 September, 2018;
originally announced September 2018.
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Magnetic properties of metal-organic coordination networks based on 3d transition metal atoms
Authors:
María Blanco-Rey,
Ane Sarasola,
Corneliu Nistor,
Luca Persichetti,
Christian Stamm,
Cinthia Piamonteze,
Pietro Gambardella,
Sebastian Stepanow,
Mikhail M. Otrokov,
Vitaly N. Golovach,
Andres Arnau
Abstract:
The magnetic anisotropy and exchange coupling between spins localized at the positions of 3d transition metal atoms forming two-dimensional metal-organic coordination networks (MOCNs) grown on the Au(111) metal surface are studied. In particular, we consider MOCNs made of Ni or Mn metal centers linked by TCNQ (7,7,8,8-tetracyanoquinodimethane) organic ligands, which form rectangular networks with…
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The magnetic anisotropy and exchange coupling between spins localized at the positions of 3d transition metal atoms forming two-dimensional metal-organic coordination networks (MOCNs) grown on the Au(111) metal surface are studied. In particular, we consider MOCNs made of Ni or Mn metal centers linked by TCNQ (7,7,8,8-tetracyanoquinodimethane) organic ligands, which form rectangular networks with 1:1 stoichiometry. Based on the analysis of X-ray magnetic circular dichroism (XMCD) data taken at T= 2.5 K, we find that Ni atoms in the Ni-TCNQ MOCNs are coupled ferromagnetically and do not show any significant magnetic anisotropy, while Mn atoms in the Mn-TCNQ MOCNs are coupled antiferromagnetically and do show a weak magnetic anisotropy with in-planemagnetization. We explain these observations using both amodelHamiltonian based on mean-fieldWeiss theory and density functional theory calculations that include spin-orbit coupling. Our main conclusion is that the antiferromagnetic coupling between Mn spins and the in-plane magnetization of the Mn spins can be explained neglecting effects due to the presence of the Au(111) surface, while for Ni-TCNQ the metal surface plays a role in determining the absence of magnetic anisotropy in the system.
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Submitted 22 February, 2018;
originally announced February 2018.
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Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators
Authors:
Jonas A. Krieger,
Cui-Zu Chang,
Marius-Adrian Husanu,
Daria Sostina,
Arthur Ernst,
Mikhail M. Otrokov,
Thomas Prokscha,
Thorsten Schmitt,
Andreas Suter,
Maia Garcia Vergniory,
Evgueni V. Chulkov,
Jagadeesh S. Moodera,
Vladimir N. Strocov,
Zaher Salman
Abstract:
We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16. The observed magnetic transi…
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We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V $L_3$ edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed.
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Submitted 28 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
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Low coverage surface diffusion in complex energy landscapes: Analytical solution and application to intercalation in topological insulators
Authors:
Miguel A. Gosalvez,
Mikhail M. Otrokov,
Nestor Ferrando,
Anastasia G. Ryabishchenkova,
Andres Ayuela,
Pedro M. Echenique,
Eugene V. Chulkov
Abstract:
A general expression is introduced for the tracer diffusivity in complex periodic energy landscapes with more than one distinct hop rate in two- and three-dimensional diluted systems (low coverage, single-tracer limit). For diffusion in two dimensions, a number of formulas are presented for complex combinations of hop rates in systems with triangular, rectangular and square symmetry. The formulas…
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A general expression is introduced for the tracer diffusivity in complex periodic energy landscapes with more than one distinct hop rate in two- and three-dimensional diluted systems (low coverage, single-tracer limit). For diffusion in two dimensions, a number of formulas are presented for complex combinations of hop rates in systems with triangular, rectangular and square symmetry. The formulas provide values in excellent agreement with Kinetic Monte Carlo simulations, concluding that the diffusion coefficient can be directly determined from the proposed expressions without performing such simulations. Based on the diffusion barriers obtained from first principles calculations and a physically-meaningful estimate of the attempt frequencies, the proposed formulas are used to analyze the diffusion of Cu, Ag and Rb adatoms on the surface and within the van der Waals (vdW) gap of a model topological insulator, Bi$_{2}$Se$_{3}$. Considering the possibility for adsorbate intercalation from the terraces to the vdW gaps at morphological steps, we infer that, at low coverage and room temperature: (i) a majority of the Rb atoms bounce back at the steps and remain on the terraces, (ii) Cu atoms mostly intercalate into the vdW gap, the remaining fraction staying at the steps, and (iii) Ag atoms essentially accumulate at the steps and gradually intercalate into the vdW gap. These conclusions are in good qualitative agreement with previous experiments.
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Submitted 24 February, 2014;
originally announced February 2014.
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Exchange interaction and its tuning in magnetic binary chalcogenides
Authors:
M. G. Vergniory,
D. Thonig,
M. Hoffmann,
I. V. Maznichenko,
M. Geilhufe,
M. M. Otrokov,
X. Zubizarreta,
S. Ostanin,
A. Marmodoro,
J. Henk,
W. Hergert,
I. Mertig,
E. V. Chulkov,
A. Ernst
Abstract:
Using a first-principles Green's function approach we study magnetic properties of the magnetic binary chalcogenides Bi2Te3, Bi2Se3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long-range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the in…
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Using a first-principles Green's function approach we study magnetic properties of the magnetic binary chalcogenides Bi2Te3, Bi2Se3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long-range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the indirect exchange interaction mediated by free carriers and the indirect interaction between magnetic moments via chalcogen atoms. The calculated Curie temperatures of these systems are in good agreement with available experimental data. Our results provide deep insight into magnetic interactions in magnetic binary chalcogenides and open a way to design new materials for promising applications.
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Submitted 27 June, 2013;
originally announced June 2013.
