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Graphene/hBN heterostructure based Valley transistor: Dynamic Control of valley current in synchronized nonzero voltages, within the time-dependent regime
Authors:
A. Belayadi,
C. I. Osuala,
I. Assi,
A. Naif,
J. P. F. LeBlanc,
A. Abbout
Abstract:
Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when influenced by carrier-dependent trapping in the hBN spacer triggered by a localized potential from Kelvin probe force microscopy (KPFM), can exhibit valley trans…
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Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when influenced by carrier-dependent trapping in the hBN spacer triggered by a localized potential from Kelvin probe force microscopy (KPFM), can exhibit valley transistor behavior under specific conditions. We employ a tight-binding model that self-consistently incorporates a Gaussian-shaped potential to represent the effect of the tip gate. Crucially, we show that the heterostructure functions as a field-effect transistor (FET), with its operation governed by the bias gate (shifting the Fermi level) and the tip-induced potential (breaking electron-hole symmetry via selective trapping of electron or hole quasiparticles). Our results reveal that, under specific lattice geometry, pulse frequency, and gate voltage conditions, the device exhibits valley transistor functionality. The valley current (e.g., I_K1=-K or I_K2=+K) can be selectively controlled by synchronizing the frequencies and polarities of the tip and bias gate voltages. Notably, when both gates are driven with the same polarity, the graphene channel outputs a periodically modulated, pure valley-polarized current. This enables switching between distinct ON/OFF valley current states even at finite bias. Remarkably, when the I_K1=-K current is ON (forward current), the I_K2=+K current is OFF. Reversing the gate polarity inverts this behavior: I_K1=-K turns OFF, while I_K2=+K turns ON (reverse current). These findings pave the way toward low-voltage valley transistors in metal-insulator-semiconductor architectures, offering new avenues for valleytronics and advanced gating technologies.
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Submitted 27 May, 2025;
originally announced May 2025.
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Thermolectricity in irradiated bilayer graphene flakes
Authors:
Cynthia Ihuoma Osuala,
Tanu Choudhary,
Raju K. Biswas,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing a combination of tight-binding theory and density functional theory (DFT), we systematically analyze the impact of light irradiation on electronic and phononic…
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We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing a combination of tight-binding theory and density functional theory (DFT), we systematically analyze the impact of light irradiation on electronic and phononic transport properties. Light irradiation alters the electronic hopping parameters, creating an asymmetric transmission function, which significantly increases the Seebeck coefficient, thereby boosting the overall {\it figure of merit} (FOM). For the phononic contribution, DFT calculations reveal that $AB$-stacked BLG exhibits lower lattice thermal conductivity compared to $AA$-stacked, attributed to enhanced anharmonic scattering and phonon group velocity. The combined analysis shows that FOM exceeds unity in both stacking types, with notable improvements near the irradiation-induced gap. Additionally, we explore the dependence of FOM on the system dimensions and temperature, demonstrating that light-irradiated BLG holds great promise for efficient thermoelectric energy conversion and waste heat recovery. Our results show favorable responses over a wide range of irradiation parameters. These findings provide crucial insights into optimizing BLG for advanced TE applications through light-induced modifications.
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Submitted 24 September, 2024; v1 submitted 16 September, 2024;
originally announced September 2024.
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Quantum transport in a multi-path graphene Aharonov-Bohm inteferometer
Authors:
Cynthia I. Osuala,
Zitao Tang,
Stefan Strauf,
Eui-Hyeok Yang,
Chunlei Qu
Abstract:
We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory behavior stemming from the interference of electron wave functions from different paths, reminiscent of the diffraction grating in optics. With increasing magnetic fi…
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We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory behavior stemming from the interference of electron wave functions from different paths, reminiscent of the diffraction grating in optics. With increasing magnetic field strength, certain nanoribbons experience transport blockade, leading to conventional Aharonov-Bohm oscillations arising from two-path interference. We also discuss the impact of edge effects and the influence of finite temperature. Our findings offer valuable insights for experimental investigations of quantum transport in multi-path devices and their potential application for interferometry and quantum sensing.
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Submitted 12 September, 2023;
originally announced September 2023.
