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Real-time adaptive tracking of fluctuating relaxation rates in superconducting qubits
Authors:
Fabrizio Berritta,
Jacob Benestad,
Jan A. Krzywda,
Oswin Krause,
Malthe A. Marciniak,
Svend Krøjer,
Christopher W. Warren,
Emil Hogedal,
Andreas Nylander,
Irshad Ahmad,
Amr Osman,
Janka Biznárová,
Marcus Rommel,
Anita Fadavi Roudsari,
Jonas Bylander,
Giovanna Tancredi,
Jeroen Danon,
Jacob Hastrup,
Ferdinand Kuemmeth,
Morten Kjaergaard
Abstract:
The fidelity of operations on a solid-state quantum processor is ultimately bounded by decoherence effects induced by a fluctuating environment. Characterizing environmental fluctuations is challenging because the acquisition time of experimental protocols limits the precision with which the environment can be measured and may obscure the detailed structure of these fluctuations. Here we present a…
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The fidelity of operations on a solid-state quantum processor is ultimately bounded by decoherence effects induced by a fluctuating environment. Characterizing environmental fluctuations is challenging because the acquisition time of experimental protocols limits the precision with which the environment can be measured and may obscure the detailed structure of these fluctuations. Here we present a real-time Bayesian method for estimating the relaxation rate of a qubit, leveraging a classical controller with an integrated field-programmable gate array (FPGA). Using our FPGA-powered Bayesian method, we adaptively and continuously track the relaxation-time fluctuations of two fixed-frequency superconducting transmon qubits, which exhibit average relaxation times of approximately 0.17 ms and occasionally exceed 0.5 ms. Our technique allows for the estimation of these relaxation times in a few milliseconds, more than two orders of magnitude faster than previous nonadaptive methods, and allows us to observe fluctuations up to 5 times the qubit's average relaxation rates on significantly shorter timescales than previously reported. Our statistical analysis reveals that these fluctuations occur on much faster timescales than previously understood, with two-level-system switching rates reaching up to 10 Hz. Our work offers an appealing solution for rapid relaxation-rate characterization in device screening and for improved understanding of fast relaxation dynamics.
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Submitted 11 June, 2025;
originally announced June 2025.
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Mitigating transients in flux-control signals in a superconducting quantum processor
Authors:
Anuj Aggarwal,
Jorge Fernández-Pendás,
Tahereh Abad,
Daryoush Shiri,
Halldór Jakobsson,
Marcus Rommel,
Andreas Nylander,
Emil Hogedal,
Amr Osman,
Janka Biznárová,
Robert Rehammar,
Michele Faucci Giannelli,
Anita Fadavi Roudsari,
Jonas Bylander,
Giovanna Tancredi
Abstract:
Flux-tunable qubits and couplers are common components in superconducting quantum processors. However, dynamically controlling these elements via current pulses poses challenges due to distortions and transients in the propagating signals. In particular, long-time transients can persist, adversely affecting subsequent qubit control operations. We model the flux control line as a first-order RC cir…
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Flux-tunable qubits and couplers are common components in superconducting quantum processors. However, dynamically controlling these elements via current pulses poses challenges due to distortions and transients in the propagating signals. In particular, long-time transients can persist, adversely affecting subsequent qubit control operations. We model the flux control line as a first-order RC circuit and introduce a class of pulses designed to mitigate long-time transients. We theoretically demonstrate the robustness of these pulses against parameter mischaracterization and provide experimental evidence of their effectiveness in mitigating transients when applied to a flux-tunable qubit coupler. The proposed pulse design offers a practical solution for mitigating long-time transients, enabling efficient and reliable experiment tune-ups without requiring detailed flux line characterization.
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Submitted 11 March, 2025;
originally announced March 2025.
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Dynamical excitation control and multimode emission of an atom-photon bound state
Authors:
Claudia Castillo-Moreno,
Kazi Rafsanjani Amin,
Ingrid Strandberg,
Mikael Kervinen,
Amr Osman,
Simone Gasparinetti
Abstract:
Atom-photon bound states arise from the coupling of quantum emitters to the band edge of dispersion-engineered waveguides. Thanks to their tunable-range interactions, they are promising building blocks for quantum simulators. Here, we study the dynamics of an atom-photon bound state emerging from coupling a frequency-tunable quantum emitter - a transmon-type superconducting circuit - to the band e…
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Atom-photon bound states arise from the coupling of quantum emitters to the band edge of dispersion-engineered waveguides. Thanks to their tunable-range interactions, they are promising building blocks for quantum simulators. Here, we study the dynamics of an atom-photon bound state emerging from coupling a frequency-tunable quantum emitter - a transmon-type superconducting circuit - to the band edge of a microwave metamaterial. Employing precise temporal control over the frequency detuning of the emitter from the band edge, we examine the transition from adiabatic to non-adiabatic behavior in the formation of the bound state and its melting into the propagating modes of the metamaterial. Moreover, we experimentally observe multi-mode emission from the bound state, triggered by a fast change of the emitter's frequency. Our study offers insight into the dynamic preparation of atom-photon bound states and provides a method to characterize their photonic content, with implications in quantum optics and quantum simulation.
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Submitted 4 April, 2025; v1 submitted 8 April, 2024;
originally announced April 2024.
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Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
Authors:
Lert Chayanun,
Janka Biznárová,
Lunjie Zeng,
Per Malmberg,
Andreas Nylander,
Amr Osman,
Marcus Rommel,
Pui Lam Tam,
Eva Olsson,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconduct…
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We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).
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Submitted 1 March, 2024;
originally announced March 2024.
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Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
Authors:
Janka Biznárová,
Amr Osman,
Emil Rehnman,
Lert Chayanun,
Christian Križan,
Per Malmberg,
Marcus Rommel,
Christopher Warren,
Per Delsing,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation…
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We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface, by growing aluminum films thicker than 300 nm. A loss analysis of coplanar-waveguide resonators shows that the improvement is owing to a reduction of dielectric loss due to two-level system defects. We perform time-of-flight secondary ion mass spectrometry and observe a reduced presence of oxygen at the substrate-metal interface for the thicker films. The correlation between the enhanced performance and the film thickness is due to the tendency of aluminum to grow in columnar structures of parallel grain boundaries, where the size of the grain depends on the film thickness: transmission electron microscopy imaging shows that the thicker film has larger grains and consequently fewer grain boundaries containing oxide near this interface. These conclusions are supported by numerical simulations of the different loss contributions in the device.
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Submitted 10 October, 2023;
originally announced October 2023.
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Mitigation of frequency collisions in superconducting quantum processors
Authors:
Amr Osman,
Jorge Fernàndez-Pendàs,
Christopher Warren,
Sandoko Kosen,
Marco Scigliuzzo,
Anton Frisk Kockum,
Giovanna Tancredi,
Anita Fadavi Roudsari,
Jonas Bylander
Abstract:
The reproducibility of qubit parameters is a challenge for scaling up superconducting quantum processors. Signal crosstalk imposes constraints on the frequency separation between neighboring qubits. The frequency uncertainty of transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction area, tunnel barrier thickness, and the qubit capacitor. We decre…
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The reproducibility of qubit parameters is a challenge for scaling up superconducting quantum processors. Signal crosstalk imposes constraints on the frequency separation between neighboring qubits. The frequency uncertainty of transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction area, tunnel barrier thickness, and the qubit capacitor. We decrease the sensitivity to these variations by fabricating larger Josephson junctions and reduce the wafer-level standard deviation in resistance down to 2%. We characterize 32 identical transmon qubits and demonstrate the reproducibility of the qubit frequencies with a 40 MHz standard deviation (i.e. 1%) with qubit quality factors exceeding 2 million. We perform two-level-system (TLS) spectroscopy and observe no significant increase in the number of TLSs causing qubit relaxation. We further show by simulation that for our parametric-gate architecture, and accounting only for errors caused by the uncertainty of the qubit frequency, we can scale up to 100 qubits with an average of only 3 collisions between quantum-gate transition frequencies, assuming 2% crosstalk and 99.9% target gate fidelity.
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Submitted 10 March, 2023; v1 submitted 8 March, 2023;
originally announced March 2023.
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Engineering symmetry-selective couplings of a superconducting artificial molecule to microwave waveguides
Authors:
Mohammed Ali Aamir,
Claudia Castillo Moreno,
Simon Sundelin,
Janka Biznárová,
Marco Scigliuzzo,
Kowshik Erappaji Patel,
Amr Osman,
D. P. Lozano,
Simone Gasparinetti
Abstract:
Tailoring the decay rate of structured quantum emitters into their environment opens new avenues for nonlinear quantum optics, collective phenomena, and quantum communications. Here we demonstrate a novel coupling scheme between an artificial molecule comprising two identical, strongly coupled transmon qubits, and two microwave waveguides. In our scheme, the coupling is engineered so that transiti…
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Tailoring the decay rate of structured quantum emitters into their environment opens new avenues for nonlinear quantum optics, collective phenomena, and quantum communications. Here we demonstrate a novel coupling scheme between an artificial molecule comprising two identical, strongly coupled transmon qubits, and two microwave waveguides. In our scheme, the coupling is engineered so that transitions between states of the same (opposite) symmetry, with respect to the permutation operator, are predominantly coupled to one (the other) waveguide. The symmetry-based coupling selectivity, as quantified by the ratio of the coupling strengths, exceeds a factor of 30 for both the waveguides in our device. In addition, we implement a two-photon Raman process activated by simultaneously driving both waveguides, and show that it can be used to coherently couple states of different symmetry in the single-excitation manifold of the molecule. Using that process, we implement frequency conversion across the waveguides, mediated by the molecule, with efficiency of about 95%. Finally, we show that this coupling arrangement makes it possible to straightforwardly generate spatially-separated Bell states propagating across the waveguides. We envisage further applications to quantum thermodynamics, microwave photodetection, and photon-photon gates.
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Submitted 24 February, 2022;
originally announced February 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Simplified Josephson-junction fabrication process for reproducibly high-performance superconducting qubits
Authors:
A. Osman,
J. Simon,
A. Bengtsson,
S. Kosen,
P. Krantz,
D. Perez,
M. Scigliuzzo,
Jonas Bylander,
A. Fadavi Roudsari
Abstract:
We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~μ$s ($Q>$1.5$\times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction ele…
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We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~μ$s ($Q>$1.5$\times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type (PICT) junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. In a study of more than 3600 junctions, we show an average resistance variation of 3.7$\%$ on a wafer that contains forty 0.5$\times$0.5-cm$^2$ chips, with junction areas ranging between 0.01 and 0.16 $μ$m$^2$. The average on-chip spread in resistance is 2.7$\%$, with 20 chips varying between 1.4 and 2$\%$. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7-2.5$\%$. We show that 60-70$\%$ of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.
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Submitted 10 November, 2020;
originally announced November 2020.
