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Meta-learning characteristics and dynamics of quantum systems
Authors:
Lucas Schorling,
Pranav Vaidhyanathan,
Jonas Schuff,
Miguel J. Carballido,
Dominik Zumbühl,
Gerard Milburn,
Florian Marquardt,
Jakob Foerster,
Michael A. Osborne,
Natalia Ares
Abstract:
While machine learning holds great promise for quantum technologies, most current methods focus on predicting or controlling a specific quantum system. Meta-learning approaches, however, can adapt to new systems for which little data is available, by leveraging knowledge obtained from previous data associated with similar systems. In this paper, we meta-learn dynamics and characteristics of closed…
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While machine learning holds great promise for quantum technologies, most current methods focus on predicting or controlling a specific quantum system. Meta-learning approaches, however, can adapt to new systems for which little data is available, by leveraging knowledge obtained from previous data associated with similar systems. In this paper, we meta-learn dynamics and characteristics of closed and open two-level systems, as well as the Heisenberg model. Based on experimental data of a Loss-DiVincenzo spin-qubit hosted in a Ge/Si core/shell nanowire for different gate voltage configurations, we predict qubit characteristics i.e. $g$-factor and Rabi frequency using meta-learning. The algorithm we introduce improves upon previous state-of-the-art meta-learning methods for physics-based systems by introducing novel techniques such as adaptive learning rates and a global optimizer for improved robustness and increased computational efficiency. We benchmark our method against other meta-learning methods, a vanilla transformer, and a multilayer perceptron, and demonstrate improved performance.
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Submitted 13 March, 2025;
originally announced March 2025.
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Bridging the reality gap in quantum devices with physics-aware machine learning
Authors:
D. L. Craig,
H. Moon,
F. Fedele,
D. T. Lennon,
B. Van Straaten,
F. Vigneau,
L. C. Camenzind,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field…
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The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach has enabled us to infer the disorder potential of a nanoscale electronic device from electron transport data. This inference is validated by verifying the algorithm's predictions about the gate voltage values required for a laterally-defined quantum dot device in AlGaAs/GaAs to produce current features corresponding to a double quantum dot regime.
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Submitted 22 November, 2021;
originally announced November 2021.
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Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
Authors:
B. Severin,
D. T. Lennon,
L. C. Camenzind,
F. Vigneau,
F. Fedele,
D. Jirovec,
A. Ballabio,
D. Chrastina,
G. Isella,
M. de Kruijf,
M. J. Carballido,
S. Svab,
A. V. Kuhlmann,
F. R. Braakman,
S. Geyer,
F. N. M. Froning,
H. Moon,
M. A. Osborne,
D. Sejdinovic,
G. Katsaros,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares
Abstract:
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra…
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The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Submitted 27 July, 2021;
originally announced July 2021.
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Deep Reinforcement Learning for Efficient Measurement of Quantum Devices
Authors:
V. Nguyen,
S. B. Orbell,
D. T. Lennon,
H. Moon,
F. Vigneau,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
D. Sejdinovic,
N. Ares
Abstract:
Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes a novel approach to the efficient measurement of quantum devices based on deep reinforcement learnin…
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Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes a novel approach to the efficient measurement of quantum devices based on deep reinforcement learning. We focus on double quantum dot devices, demonstrating the fully automatic identification of specific transport features called bias triangles. Measurements targeting these features are difficult to automate, since bias triangles are found in otherwise featureless regions of the parameter space. Our algorithm identifies bias triangles in a mean time of less than 30 minutes, and sometimes as little as 1 minute. This approach, based on dueling deep Q-networks, can be adapted to a broad range of devices and target transport features. This is a crucial demonstration of the utility of deep reinforcement learning for decision making in the measurement and operation of quantum devices.
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Submitted 30 September, 2020;
originally announced September 2020.
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Machine learning enables completely automatic tuning of a quantum device faster than human experts
Authors:
H. Moon,
D. T. Lennon,
J. Kirkpatrick,
N. M. van Esbroeck,
L. C. Camenzind,
Liuqi Yu,
F. Vigneau,
D. M. Zumbühl,
G. A. D. Briggs,
M. A Osborne,
D. Sejdinovic,
E. A. Laird,
N. Ares
Abstract:
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron…
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Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron transport features. We focused on gate-defined quantum dot devices, demonstrating fully automated tuning of two different devices to double quantum dot regimes in an up to eight-dimensional gate voltage space. We considered a parameter space defined by the maximum range of each gate voltage in these devices, demonstrating expected tuning in under 70 minutes. This performance exceeded a human benchmark, although we recognise that there is room for improvement in the performance of both humans and machines. Our approach is approximately 180 times faster than a pure random search of the parameter space, and it is readily applicable to different material systems and device architectures. With an efficient navigation of the gate voltage space we are able to give a quantitative measurement of device variability, from one device to another and after a thermal cycle of a device. This is a key demonstration of the use of machine learning techniques to explore and optimise the parameter space of quantum devices and overcome the challenge of device variability.
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Submitted 8 January, 2020;
originally announced January 2020.
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Efficiently measuring a quantum device using machine learning
Authors:
D. T. Lennon,
H. Moon,
L. C. Camenzind,
Liuqi Yu,
D. M. Zumbühl,
G. A. D. Briggs,
M. A. Osborne,
E. A. Laird,
N. Ares
Abstract:
Scalable quantum technologies will present challenges for characterizing and tuning quantum devices. This is a time-consuming activity, and as the size of quantum systems increases, this task will become intractable without the aid of automation. We present measurements on a quantum dot device performed by a machine learning algorithm. The algorithm selects the most informative measurements to per…
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Scalable quantum technologies will present challenges for characterizing and tuning quantum devices. This is a time-consuming activity, and as the size of quantum systems increases, this task will become intractable without the aid of automation. We present measurements on a quantum dot device performed by a machine learning algorithm. The algorithm selects the most informative measurements to perform next using information theory and a probabilistic deep-generative model, the latter capable of generating multiple full-resolution reconstructions from scattered partial measurements. We demonstrate, for two different measurement configurations, that the algorithm outperforms standard grid scan techniques, reducing the number of measurements required by up to 4 times and the measurement time by 3.7 times. Our contribution goes beyond the use of machine learning for data search and analysis, and instead presents the use of algorithms to automate measurement. This work lays the foundation for automated control of large quantum circuits.
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Submitted 23 October, 2018;
originally announced October 2018.
