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Good practice guide on the graphene-based AC-QHE realization of the farad
Authors:
Luca Callegaro,
Stephan Bauer,
Blaise Jeanneret,
Mattias Kruskopf,
Martina Marzano,
Massimo Ortolano,
Frederic Overney
Abstract:
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The gu…
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This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The guide is a deliverable of the Joint Research Project EMPIR 18SIB07 GIQS: Graphene Impedance Quantum Standard. This project received funding from the European Metrology Programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions' Horizon 2020 research and innovation programme. Funder ID: 10.13039/100014132 , Grant no: 18SIB07.
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Submitted 10 May, 2022;
originally announced May 2022.
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Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions
Authors:
Albert F. Rigosi,
Dinesh Patel,
Martina Marzano,
Mattias Kruskopf,
Heather M. Hill,
Hanbyul Jin,
Jiuning Hu,
Angela R. Hight Walker,
Massimo Ortolano,
Luca Callegaro,
Chi-Te Liang,
David B. Newell
Abstract:
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantize…
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We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.
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Submitted 24 January, 2022;
originally announced January 2022.
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On the synthesis of Quantum Hall Array Resistance Standards
Authors:
Massimo Ortolano,
Marco Abrate,
Luca Callegaro
Abstract:
Quantum Hall effect (QHE) is the basis of modern resistance metrology. In Quantum Hall Array Resistance Standards (QHARS), several individual QHE elements, each one having the same QHE resistance (typically half of the von Klitzing constant), are arranged in networks that realize resistance values close to decadic values (such as 1 kiloohm or 100 kiloohm), of direct interest for dissemination. The…
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Quantum Hall effect (QHE) is the basis of modern resistance metrology. In Quantum Hall Array Resistance Standards (QHARS), several individual QHE elements, each one having the same QHE resistance (typically half of the von Klitzing constant), are arranged in networks that realize resistance values close to decadic values (such as 1 kiloohm or 100 kiloohm), of direct interest for dissemination. The same decadic value can be approximated with different grades of precision, and even for the same approximation several networks of QHE elements can be conceived. The paper investigates the design of QHARS networks by giving methods to find a proper approximation of the resistance of interest, and to design the corresponding network with a small number of elements. Results for several decadic cases are given.
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Submitted 4 November, 2013;
originally announced November 2013.
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Bridge connection of quantum Hall elementary devices
Authors:
Luca Callegaro,
Massimo Ortolano
Abstract:
Multiple-series and multiple-parallel connections of quantum Hall elementary devices allow the realization of multiple or fractional values of the quantized Hall resistance, rejecting the effect of contact and wiring resistances. We introduce here the multiple-bridge connection, which maintains the properties of multiple-series and parallel connections and allows more freedom in the choice of the…
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Multiple-series and multiple-parallel connections of quantum Hall elementary devices allow the realization of multiple or fractional values of the quantized Hall resistance, rejecting the effect of contact and wiring resistances. We introduce here the multiple-bridge connection, which maintains the properties of multiple-series and parallel connections and allows more freedom in the choice of the topology of networks composed of quantum Hall elements, and the design of more efficient quantum Hall array resistance standards (and other devices). As an example, a 5-element network is analyzed in detail.
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Submitted 21 October, 2013;
originally announced October 2013.
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Matrix method analysis of quantum Hall effect device connections
Authors:
Massimo Ortolano,
Luca Callegaro
Abstract:
The modelling of electrical connections of single, or several, multiterminal quantum Hall effect (QHE) devices is relevant for electrical metrology: it is known, in fact, that certain particular connections allow i) the realization of multiples or fractions of the quantised resistance, or ii) the rejection of stray impedances, so that the configuration maintains the status of quantum standard. Ric…
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The modelling of electrical connections of single, or several, multiterminal quantum Hall effect (QHE) devices is relevant for electrical metrology: it is known, in fact, that certain particular connections allow i) the realization of multiples or fractions of the quantised resistance, or ii) the rejection of stray impedances, so that the configuration maintains the status of quantum standard. Ricketts-Kemeny and Delahaye equivalent circuits are known to be accurate models of the QHE: however, the numerical or analytical solution of electrical networks including these equivalent circuits can be difficult. In this paper, we introduce a method of analysis based on the representation of a QHE device by means of the \emph{indefinite admittance matrix}: external connections are then represented with another matrix, easily written by inspection. Some examples, including the solution of double- and triple-series connections, are shown.
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Submitted 12 July, 2011;
originally announced July 2011.
