Holographic patterning of graphene-oxide films by light-driven reduction
Authors:
Emanuele Orabona,
Antonio Ambrosio,
Angela Longo,
Gianfranco Carotenuto,
Luigi Nicolais,
Pasquale Maddalena
Abstract:
We report on the patterning and reduction of graphene-oxide films by holographic lithography. Light reduction can be used to engineer low-cost graphene-based devices by performing a local conversion of insulating oxide into the conductive graphene. In this work, computer generated holograms have been exploited to realize complex graphene patterns in a single shot, differently from serial laser wri…
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We report on the patterning and reduction of graphene-oxide films by holographic lithography. Light reduction can be used to engineer low-cost graphene-based devices by performing a local conversion of insulating oxide into the conductive graphene. In this work, computer generated holograms have been exploited to realize complex graphene patterns in a single shot, differently from serial laser writing or mask-based photolithographic processes. The technique has been further improved by achieving speckle noise reduction: submicron and diffraction-limited features have been obtained. In addition we have also demonstrated that the gray-scale lithography capability can be used to obtain different reduction levels in a single exposure.
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Submitted 14 March, 2014;
originally announced March 2014.
Contact-free probing of interfacial charging and Debye-like charge screening in SiO$_2$/PDI8-CN$_2$ systems by optical second harmonic generation
Authors:
Francesca Ciccullo,
Antonio Cassinese,
Emanuele Orabona,
Luigi Santamaria,
Pasquale Maddalena,
Stefano Lettieri
Abstract:
Investigation of the interfacial electronic properties of N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN2) organic semiconductor films grown on silicon dioxide is performed by polarization-resolved second harmonic generation optical spectroscopy, pointing out a spatial region where charge carriers distribution in the semiconductor lacks inversion symmetry. By develo…
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Investigation of the interfacial electronic properties of N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN2) organic semiconductor films grown on silicon dioxide is performed by polarization-resolved second harmonic generation optical spectroscopy, pointing out a spatial region where charge carriers distribution in the semiconductor lacks inversion symmetry. By developing a model for nonlinear susceptibility in the framework of Debye-Huckel screening theory, we show that the experimental findings can be interpreted as resulting from the presence of a net charge localized at the silicon dioxide, accompanied by a non-uniform charge distribution in the organic semiconductor. Photoluminescence analysis further reinforces this scenario. Reduction-oxidation reactions involving PDI8-CN2 and water molecules are invoked as physical origin of the localized charge. The work outlines a sensitive tool to probe the total charge localized at buried semiconductor/dielectric interfaces in organic thin-film transistors without resorting to invasive contact-based analyses.
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Submitted 30 June, 2013;
originally announced July 2013.
