Showing 1–27 of 27 results for author: Opeil, C

Experimental determination of phonon thermal conductivity and Lorenz ratio of single crystal bismuth telluride

Authors: Mengliang Yao, Stephen Wilson, Mona Zebarjadi, Cyril Opeil

Abstract: We use a magnetothermal resistance method to measure the lattice thermal conductivity of a single crystal of Bi$_2$Te$_3$ from 5 to 60 K. We apply a large transverse magnetic field to suppress the electronic thermal conduction while measuring thermal conductivity and electrical resistivity. The lattice thermal conductivity is then calculated by extrapolating the thermal conductivity versus electri… ▽ More We use a magnetothermal resistance method to measure the lattice thermal conductivity of a single crystal of Bi$_2$Te$_3$ from 5 to 60 K. We apply a large transverse magnetic field to suppress the electronic thermal conduction while measuring thermal conductivity and electrical resistivity. The lattice thermal conductivity is then calculated by extrapolating the thermal conductivity versus electrical conductivity curve to a zero electrical conductivity value. Our results show that the measured phonon thermal conductivity follows the $e^{(Δ_{min}/T)}$ temperature dependence and the Lorenz ratio corresponds to the modified Sommerfeld value in the intermediate temperature range. Our low-temperature experimental data and analysis on Bi$_2$Te$_3$ are an important compliment to previous measurements of Goldsmid [14] and theoretical calculations by Broido $\textit{et al.}$ [21] at higher temperature 100 - 300 K. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 10 pages, 6 figures

Experimental determination of phonon thermal conductivity and Lorenz ratio of single crystal metals: Al, Cu and Zn

Authors: Mengliang Yao, Mona Zebarjadi, Cyril P. Opeil

Abstract: We use a magnetothermal resistance method to measure lattice thermal conductivity of pure single crystal metals over a wide range of temperatures. Large transverse magnetic fields are applied to suppress electronic thermal conduction. The total thermal conductivity and the electrical conductivity are measured as functions of applied magnetic field. The lattice thermal conductivity is then extracte… ▽ More We use a magnetothermal resistance method to measure lattice thermal conductivity of pure single crystal metals over a wide range of temperatures. Large transverse magnetic fields are applied to suppress electronic thermal conduction. The total thermal conductivity and the electrical conductivity are measured as functions of applied magnetic field. The lattice thermal conductivity is then extracted by extrapolating the thermal conductivity versus electrical conductivity curve at zero electrical conductivity. We used this method to experimentally measure the lattice thermal conductivity and Lorenz number in single crystal Al (100), Cu (100) and Zn (001) in a temperature range of 5 to 60 K. Our results show that the measured phonon thermal conductivity versus temperature plot has a peak around one tenth of the Debye Temperature, and the Lorenz number is found to deviate from the Sommerfeld value in the intermediate temperature range. △ Less

Submitted 25 February, 2017; originally announced February 2017.

Comments: 12 pages, 10 figures, original research manuscript

Low Temperature Thermoelectric Properties of Co- and Cr- doped CuAgSe

Authors: P. Czajka, M. Yao, C. Opeil

Abstract: High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of which are enhanced when the material is doped with Ni at the Cu sites. The exact mechanism by which these enhancements result; however, is unclear. In o… ▽ More High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of which are enhanced when the material is doped with Ni at the Cu sites. The exact mechanism by which these enhancements result; however, is unclear. In order to further investigate the effects of chemical substitution on the material's thermoelectric properties, we have prepared and performed various measurements on $CuAgSe$ samples doped with Co and Cr according to the following compositional formulas: $Cu_{1-x}Co_{x}AgSe$ $(x=0.02, 0.05, 0.10)$ and $Cu_{1-x}Cr_{x}AgSe$ $(x=0.02, 0.05)$. Measurements of temperature and magnetic field dependent thermal conductivity, electrical resistivity, and Seebeck coefficient will be discussed. Our results reveal a remarkable sensitivity of $CuAgSe$'s thermoelectric properties to chemical doping in general as well as a particular sensitivity to specific dopants. This demonstrated tunability of $CuAgSe$'s various properties furthers the case that high mobility phonon glass-semimetals are strong candidates for potential low temperature thermoelectric applications. △ Less

Submitted 18 October, 2016; originally announced October 2016.

Comments: 24 pages, 9 figures

The influence of electron-doping on the ground state of (Sr{1-x}La{x})2IrO4

Authors: Xiang Chen, Tom Hogan, D. Walkup, Wenwen Zhou, M. Pokharel, Mengliang Yao, Wei Tian, Thomas Z. Ward, Y. Zhao, D. Parshall, C. Opeil, J. W. Lynn, Vidya Madhavan, Stephen D. Wilson

Abstract: The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the… ▽ More The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed. △ Less

Submitted 5 August, 2015; v1 submitted 24 June, 2015; originally announced June 2015.

Comments: 12 pages, 12 figures. New version has revised text, added references, and updated figures

Journal ref: Phys. Rev. B 92, 075125 (2015)

Anomalous CDW ground state in Cu$_2$Se: a wave-like fluctuation of $\it{dc}$ I-V curve near 50 K

Authors: Mengliang Yao, Weishu Liu, Xiang Chen, Zhensong Ren, Stephen Wilson, Zhifeng Ren, Cyril P. Opeil

Abstract: A charge density wave (CDW) ground state is observed in polycrystalline Cu$_2$Se below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6. Due to the polycrystalline structure, the Peierls transition process has been expanded to a wide temperature range from 90 to 160 K. The Hall carrier concentration shows a continuous decrease from 2.1$\times$10… ▽ More A charge density wave (CDW) ground state is observed in polycrystalline Cu$_2$Se below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6. Due to the polycrystalline structure, the Peierls transition process has been expanded to a wide temperature range from 90 to 160 K. The Hall carrier concentration shows a continuous decrease from 2.1$\times$10$^{20}$ to 1.6$\times$10$^{20}$ cm$^{-3}$ in the temperature range from 160 K to 80 K, while almost unchanged above 160 K and below 90 K. After entering the CDW ground state, a wave-like fluctuation was observed in the I-V curve near 50 K, which exhibits as a periodic negative differential resistivity in an applied electric field due to the current. We also investigated the doping effect of Zn, Ni, and Te on the CDW ground state. Both Zn and Ni doped Cu$_2$Se show a CDW character with increased energy gap and electron-phonon coupling constant, but no notable Peierls transition was observed in Te doped Cu$_2$Se. Similar wave-like I-V curve was also seen in Cu$_{1.98}$Zn$_{0.02}$Se near 40 K. The regular fluctuation in $\it{dc}$ I-V curve was not magnetic field sensitive, but temperature and sample size sensitive. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6

Authors: Mani Pokharel, Tulashi Dahal, Zhifeng Ren, Cyril Opeil

Abstract: Samples of heavy fermion compound CeCu6 were prepared by hot-press technique. Temperature-dependent (5-300 K) thermoelectric transport properties of the samples were measured. The dimensionless figure-of-merit (ZT) was optimized by varying the hot-pressing temperature. Our measurements of thermal conductivity show that the lowest hot pressing temperature (450 C) produces the lowest thermal conduct… ▽ More Samples of heavy fermion compound CeCu6 were prepared by hot-press technique. Temperature-dependent (5-300 K) thermoelectric transport properties of the samples were measured. The dimensionless figure-of-merit (ZT) was optimized by varying the hot-pressing temperature. Our measurements of thermal conductivity show that the lowest hot pressing temperature (450 C) produces the lowest thermal conductivity. Electrical resistivity increases significantly while the Seebeck coefficient decreases with decrease in the hot pressing temperature. As the hot-pressing temperature decreases, electronic contribution to the total thermal conductivity decreased more rapidly than the lattice contribution did. As a result, for lower hot-pressing temperature the gain in thermal conductivity reduction was offset by the loss in power factor. Our ZT calculations show a broad peak with a maximum value of 0.024 at 60 K for the sample hot pressed at 800 C. The pronounced low-temperature ZT peak emphasizes the importance of this heavy fermion system as a potential p-type thermoelectric for solid state cooling applications. △ Less

Submitted 13 December, 2013; v1 submitted 11 December, 2013; originally announced December 2013.

Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7

Authors: Chetan Dhital, Tom Hogan, Wenwen Zhou, Xiang Chen, Zhensong Ren, Mani Pokharel, Yoshinori Okada, M. Heine, Wei Tian, Z. Yamani, C. Opeil, J. S. Helton, J. W. Lynn, Ziqiang Wang, Vidya Madhavan, Stephen D. Wilson

Abstract: Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interacti… ▽ More Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator. △ Less

Submitted 14 March, 2014; v1 submitted 4 November, 2013; originally announced November 2013.

Comments: 25 pages, 4 figures in main text, 4 figures in supplemental text

Journal ref: Nature Communications 5, 3377 (2014)

Enhancing the Figure of Merit in Te-doped FeSb2 through nanostructuring

Authors: M. Pokharel, H. Z. Zhao, M. Koirala, Z. F. Ren, C. Opeil

Abstract: We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at lo… ▽ More We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of Sb site by Te atom. The combined effect results in a ZT = 0.022 at 100 K, an increase of 62% over the ZT value for the optimized Te-doped single crystal sample. Hall coefficient and electrical resistivity measurements reveal a decreased mobility and increased concentration of the carriers in the doped sample. △ Less

Submitted 15 March, 2013; originally announced March 2013.

Comments: 14 pages, 6 figures

Phonon Drag Effect in Nanocomposite FeSb2

Authors: Mani Pokharel, Huaizhou Zhao, Kevin Lukas, Bogdan Mihaila, Zhifeng Ren, Cyril Opeil

Abstract: We study the temperature dependence of thermoelectric transport properties of four FeSb2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased ph… ▽ More We study the temperature dependence of thermoelectric transport properties of four FeSb2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased phonon scattering at the grain boundaries leads to a suppression of the phonon-drag effect, resulting in a much smaller peak value of the Seebeck coefficient in the nanostructured bulk materials. As a consequence, the ZT values are not improved significantly even though the thermal conductivity is drastically reduced. △ Less

Submitted 10 October, 2012; originally announced October 2012.

Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements

Authors: K. C. Lukas, W. S. Liu, Q. Jie, Z. F. Ren, C. P. Opeil

Abstract: An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also explained for Cu0.01Bi2Te2.7Se0.3 while a second measurement is made on Yb0.35Co4Sb12 as a function of time at 400 C. Both measurements confirm that the material… ▽ More An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also explained for Cu0.01Bi2Te2.7Se0.3 while a second measurement is made on Yb0.35Co4Sb12 as a function of time at 400 C. Both measurements confirm that the materials are thermally stable for the temperature range and time period measured. Measurements made during temperature cycling show an irreversible decrease in the electrical resistivity of Cu0.01Bi2Te2.7Se0.3 when the measuring temperature exceeds the pressing temperature. Several other possible uses of such a system include but are not limited to studying the effects of annealing and/or oxidation as a function of both temperature and time. △ Less

Submitted 11 June, 2012; originally announced June 2012.

Spin ordering and electronic texture in the bilayer iridate Sr$_3$Ir$_2$O$_7$

Authors: Chetan Dhital, Sovit Khadka, Z. Yamani, Clarina de la Cruz, T. C. Hogan, S. M. Disseler, Mani Pokharel, K. C. Lukas, Wei Tian, C. P. Opeil, Ziqiang Wang, Stephen D. Wilson

Abstract: Through a neutron scattering, charge transport, and magnetization study, the correlated ground state in the bilayer iridium oxide Sr$_3$Ir$_2$O$_7$ is explored. Our combined results resolve scattering consistent with a high temperature magnetic phase that persists above 600 K, reorients at the previously defined $T_{AF}=280$ K, and coexists with an electronic ground state whose phase behavior sugg… ▽ More Through a neutron scattering, charge transport, and magnetization study, the correlated ground state in the bilayer iridium oxide Sr$_3$Ir$_2$O$_7$ is explored. Our combined results resolve scattering consistent with a high temperature magnetic phase that persists above 600 K, reorients at the previously defined $T_{AF}=280$ K, and coexists with an electronic ground state whose phase behavior suggests the formation of a fluctuating charge or orbital phase that freezes below $T^{*}\approx70$ K. Our study provides a window into the emergence of multiple electronic order parameters near the boundary of the metal to insulator phase transition of the 5d $J_{eff}=1/2$ Mott phase. △ Less

Submitted 9 September, 2012; v1 submitted 5 June, 2012; originally announced June 2012.

Comments: Revised text and figures. 4 pages, 4 figures

Journal ref: Phys. Rev. B 86, 100401(R) (2012)

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications

Authors: Kevin C. Lukas, Weishu Liu, Zhifeng Ren, Cyril P. Opeil

Abstract: Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the efficiency of these thermoelectric devices may be due to the diffusion of the barrier layer into the thermoelectric material. In this work Ni, Co, Fe, and Mn are i… ▽ More Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the efficiency of these thermoelectric devices may be due to the diffusion of the barrier layer into the thermoelectric material. In this work Ni, Co, Fe, and Mn are intentionally doped into Cu0.01Bi2Te2.7Se0.3 in order to understand their effects on the thermoelectric material. Thermoelectric transport properties including the Seebeck coefficient, thermal conductivity, electrical resistivity, carrier concentration, and carrier mobility of Cu0.01Bi2Te2.7Se0.3 doped with 2 atomic percent M (M=Ni, Co, Fe, Mn) as Cu0.01Bi2Te2.7Se0.3M0.02, are studied in a temperature range of 5-525 K. △ Less

Submitted 29 May, 2012; originally announced May 2012.

Thermoelectric Properties of Ho-doped Bi1-xSbx

Authors: K. C. Lukas, G. Joshi, K. Modic, Z. F. Ren, C. P. Opeil

Abstract: The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm… ▽ More The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1% Ho increases the maximum ZT to 0.31 at 221 K and the 3% doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K. △ Less

Submitted 30 January, 2012; originally announced January 2012.

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

Authors: K. C. Lukas, W. S. Liu, G. Joshi, M. Zebarjadi, M. S. Dresselhaus, Z. F. Ren, G. Chen, C. P. Opeil

Abstract: Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedema… ▽ More Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers and phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials. △ Less

Submitted 24 January, 2012; originally announced January 2012.

Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$

Authors: Chetan Dhital, Clarina de la Cruz, C. Opeil, A. Treat, K. F. Wang, J. -M. Liu, Z. F. Ren, Stephen D. Wilson

Abstract: We demonstrate that magnetic phase separation and competing spin order in the colossal magnetoresistive (CMR) manganites can be directly explored via tuning strain in bulk samples of nanocrystalline La$_{1-x}$Ca$_x$MnO$_3$. Our results show that strain can be reversibly frozen into the lattice in order to stabilize coexisting antiferromagnetic domains within the nominally ferromagnetic metallic st… ▽ More We demonstrate that magnetic phase separation and competing spin order in the colossal magnetoresistive (CMR) manganites can be directly explored via tuning strain in bulk samples of nanocrystalline La$_{1-x}$Ca$_x$MnO$_3$. Our results show that strain can be reversibly frozen into the lattice in order to stabilize coexisting antiferromagnetic domains within the nominally ferromagnetic metallic state of La$_{5/8}$Ca$_{3/8}$MnO$_3$. The measurement of tunable phase separation via magnetic neutron powder diffraction presents a direct route of exploring the correlated spin properties of phase separated charge/magnetic order in highly strained CMR materials and opens a potential avenue for realizing intergrain spin tunnel junction networks with enhanced CMR behavior in a chemically homogeneous material. △ Less

Submitted 10 November, 2011; v1 submitted 8 April, 2011; originally announced April 2011.

Comments: 6 pages, 4 figures. New figure and text added to manuscript

Journal ref: Physical Review B 84, 144401 (2011)

Tin telluride: a weakly co-elastic metal

Authors: E. K. H. Salje, D. J. Safarik, K. A. Modic, J. E. Gubernatis, J. C. Cooley, R. D. Taylor, B. Mihaila, A. Saxena, T. Lookman, J. L. Smith, R. A. Fisher, M. Pasternak, C. P. Opeil, T. Siegrist, P. B. Littlewood, J. C. Lashley

Abstract: We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport, magnetization, specific heat, and $^{119}$Sn Mössbauer spectroscopy measurements on SnTe and Sn$_{0.995}$Cr$_{0.005}$Te. Hall measurements at $T=77$ K indicate that our Bridgman-grown single crystals have a $p$-type carrier concentration of $3.4 \times 10^{19}$ cm$^{-3}$ and that our Cr-doped crystals… ▽ More We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport, magnetization, specific heat, and $^{119}$Sn Mössbauer spectroscopy measurements on SnTe and Sn$_{0.995}$Cr$_{0.005}$Te. Hall measurements at $T=77$ K indicate that our Bridgman-grown single crystals have a $p$-type carrier concentration of $3.4 \times 10^{19}$ cm$^{-3}$ and that our Cr-doped crystals have an $n$-type concentration of $5.8 \times 10^{22}$ cm$^{-3}$. Although our SnTe crystals are diamagnetic over the temperature range $2\, \text{K} \leq T \leq 1100\, \text{K}$, the Cr-doped crystals are room temperature ferromagnets with a Curie temperature of 294 K. For each sample type, three-terminal capacitive dilatometry measurements detect a subtle 0.5 micron distortion at $T_c \approx 85$ K. Whereas our RUS measurements on SnTe show elastic hardening near the structural transition, pointing to co-elastic behavior, similar measurements on Sn$_{0.995}$Cr$_{0.005}$Te show a pronounced softening, pointing to ferroelastic behavior. Effective Debye temperature, $θ_D$, values of SnTe obtained from $^{119}$Sn Mössbauer studies show a hardening of phonons in the range 60--115K ($θ_D$ = 162K) as compared with the 100--300K range ($θ_D$ = 150K). In addition, a precursor softening extending over approximately 100 K anticipates this collapse at the critical temperature, and quantitative analysis over three decades of its reduced modulus finds $ΔC_{44}/C_{44}=A|(T-T_0)/T_0|^{-κ}$ with $κ= 0.50 \pm 0.02 $, a value indicating a three-dimensional softening of phonon branches at a temperature $T_0 \sim 75$ K, considerably below $T_c$. We suggest that the differences in these two types of elastic behaviors lie in the absence of elastic domain wall motion in the one case and their nucleation in the other. △ Less

Submitted 5 November, 2010; originally announced November 2010.

Report number: LA-UR-10-07652

Journal ref: Phys. Rev. B 82, 036604 (2010)

Band structure of SnTe studied by Photoemission Spectroscopy

Authors: P. B. Littlewood, B. Mihaila, R. K. Schulze, D. J. Safarik, J. E. Gubernatis, A. Bostwick, E. Rotenberg, C. P. Opeil, T. Durakiewicz, J. L. Smith, J. C. Lashley

Abstract: We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our study reveals the conjectured complex Fermi surface structure near the L-points showing topological changes in the bands from disconnected pockets, to open tub… ▽ More We present an angle-resolved photoemission spectroscopy study of the electronic structure of SnTe, and compare the experimental results to ab initio band structure calculations as well as a simplified tight-binding model of the p-bands. Our study reveals the conjectured complex Fermi surface structure near the L-points showing topological changes in the bands from disconnected pockets, to open tubes, and then to cuboids as the binding energy increases, resolving lingering issues about the electronic structure. The chemical potential at the crystal surface is found to be 0.5eV below the gap, corresponding to a carrier density of p =1.14x10^{21} cm^{-3} or 7.2x10^{-2} holes per unit cell. At a temperature below the cubic-rhombohedral structural transition a small shift in spectral energy of the valance band is found, in agreement with model predictions. △ Less

Submitted 24 August, 2010; originally announced August 2010.

Comments: 4 figures

Report number: LA-UR-10-02381

Journal ref: Phys. Rev. Lett. 105, 086404 (2010)

Observation of a continuous phase transition in a shape-memory alloy

Authors: J. C. Lashley, S. M. Shapiro, B. L. Winn, C. P. Opeil, M. E. Manley, A. Alatas, W. Ratcliff, T. Park, R. A. Fisher, B. Mihaila, P. Riseborough, E. K. H. Salje, J. L. Smith

Abstract: Elastic neutron-scattering, inelastic x-ray scattering, specific-heat, and pressure-dependent electrical transport measurements have been made on single crystals of AuZn and Au_{0.52}Zn_{0.48} above and below their martensitic transition temperatures (T_M=64K and 45K, respectively). In each composition, elastic neutron scattering detects new commensurate Bragg peaks (modulation) appearing at Q =… ▽ More Elastic neutron-scattering, inelastic x-ray scattering, specific-heat, and pressure-dependent electrical transport measurements have been made on single crystals of AuZn and Au_{0.52}Zn_{0.48} above and below their martensitic transition temperatures (T_M=64K and 45K, respectively). In each composition, elastic neutron scattering detects new commensurate Bragg peaks (modulation) appearing at Q = (1.33,0.67,0) at temperatures corresponding to each sample's T_M. Although the new Bragg peaks appear in a discontinuous manner in the Au_{0.52}Zn_{0.48} sample, they appear in a continuous manner in AuZn. Surprising us, the temperature dependence of the AuZn Bragg peak intensity and the specific-heat jump near the transition temperature are in favorable accord with a mean-field approximation. A Landau-theory-based fit to the pressure dependence of the transition temperature suggests the presence of a critical endpoint in the AuZn phase diagram located at T_M*=2.7K and p*=3.1GPa, with a quantum saturation temperature θ_s=48.3 +/- 3.7K. △ Less

Submitted 12 August, 2008; originally announced August 2008.

Comments: 6 figures

Report number: LA-UR-08-05460

Journal ref: Phys. Rev. Lett. 101, 135703 (2008)

Combined experimental and theoretical investigation of the premartensitic transition in Ni$_2$MnGa

Authors: C. P. Opeil, B. Mihaila, R. K. Schulze, L. Manosa, A. Planes, W. L. Hults, R. A. Fisher, P. S. Riseborough, P. B. Littlewood, J. L. Smith, J. C. Lashley

Abstract: Ultraviolet-photoemission (UPS) measurements and supporting specific-heat, thermal-expansion, resistivity and magnetic-moment measurements are reported for the magnetic shape-memory alloy Ni$_2$MnGa over the temperature range $100K < T < 250K$. All measurements detect clear signatures of the premartensitic transition ($T_\mathrm{PM}\sim 247K$) and the martensitic transition (… ▽ More Ultraviolet-photoemission (UPS) measurements and supporting specific-heat, thermal-expansion, resistivity and magnetic-moment measurements are reported for the magnetic shape-memory alloy Ni$_2$MnGa over the temperature range $100K < T < 250K$. All measurements detect clear signatures of the premartensitic transition ($T_\mathrm{PM}\sim 247K$) and the martensitic transition ($T_\mathrm{M} \sim 196K$). Temperature-dependent UPS shows a dramatic depletion of states (pseudogap) at $T_\mathrm{PM}$ located 0.3eV below the Fermi energy. First-principles electronic structure calculations show that the peak observed at 0.3eV in the UPS spectra for $T > T_\mathrm{PM}$ is due to the Ni-d minority-spin electrons. Below $T_\mathrm{M}$ this peak disappears, resulting in an enhanced density of states at energies around 0.8eV. This enhancement reflects Ni-d and Mn-d electronic contributions to the majority-spin density of states and is accompanied by significant reconstruction of the Fermi surface. △ Less

Submitted 18 March, 2008; originally announced March 2008.

Report number: LA-UR-08-1278

Journal ref: Phys. Rev. Lett. 100, 165703 (2008)

Heat Capacity in Magnetic and Electric Fields Near the Ferroelectric Transition in Tri-Glycine Sulfate

Authors: J. C. Lashley, C. P. Opeil, T. R. Finlayson, R. A. Fisher, N. Hur, M. F. Hundley, B. Mihaila, J. L. Smith

Abstract: Specific-heat measurements are reported near the Curie temperature ($T_C$~= 320 K) on tri-glycine sulfate. Measurements were made on crystals whose surfaces were either non-grounded or short-circuited, and were carried out in magnetic fields up to 9 T and electric fields up to 220 V/cm. In non-grounded crystals we find that the shape of the specific-heat anomaly near $T_C$ is thermally broadened… ▽ More Specific-heat measurements are reported near the Curie temperature ($T_C$~= 320 K) on tri-glycine sulfate. Measurements were made on crystals whose surfaces were either non-grounded or short-circuited, and were carried out in magnetic fields up to 9 T and electric fields up to 220 V/cm. In non-grounded crystals we find that the shape of the specific-heat anomaly near $T_C$ is thermally broadened. However, the anomaly changes to the characteristic sharp $λ$-shape expected for a continuous transition with the application of either a magnetic field or an electric field. In crystals whose surfaces were short-circuited with gold, the characteristic $λ$-shape appeared in the absence of an external field. This effect enabled a determination of the critical exponents above and below $T_C$, and may be understood on the basis that the surface charge originating from the pyroelectric coefficient, $dP/dT$, behaves as if shorted by external magnetic or electric fields. △ Less

Submitted 3 January, 2007; originally announced January 2007.

Comments: 4 Pages, 4 Figures. To Appear in Applied Physics Letters_ January 2007

Journal ref: Appl.Phys.Lett.90:052910,2007

Angle-resolved photoemission and first-principles electronic structure of single-crystalline $α$-uranium (001)

Authors: C. P. Opeil, R. K. Schulze, H. M. Volz, J. C. Lashley, M. E. Manley, W. L. Hults, R. J. Hanrahan Jr., J. L. Smith, B. Mihaila, K. B. Blagoev, R. C. Albers, P. B. Littlewood

Abstract: Continuing the photoemission study begun with the work of Opeil et al. [Phys. Rev. B \textbf{73}, 165109 (2006)], in this paper we report results of an angle-resolved photoemission spectroscopy (ARPES) study performed on a high-quality single-crystal $α$-uranium at 173 K. The absence of surface-reconstruction effects is verified using X-ray Laue and low-energy electron diffraction (LEED) pattern… ▽ More Continuing the photoemission study begun with the work of Opeil et al. [Phys. Rev. B \textbf{73}, 165109 (2006)], in this paper we report results of an angle-resolved photoemission spectroscopy (ARPES) study performed on a high-quality single-crystal $α$-uranium at 173 K. The absence of surface-reconstruction effects is verified using X-ray Laue and low-energy electron diffraction (LEED) patterns. We compare the ARPES intensity map with first-principles band structure calculations using a generalized gradient approximation (GGA) and we find good correlations with the calculated dispersion of the electronic bands. △ Less

Submitted 21 November, 2006; originally announced November 2006.

Report number: LA-UR-06-2457

Journal ref: Phys. Rev. B 75, 045120 (2007)

Tricritical Phenomena at the Cerium $γ\to α$ Transition

Authors: J. C. Lashley, A. C. Lawson, J. C. Cooley, B. Mihaila, C. P. Opeil, L. Pham, W. L. Hults, J. L. Smith, G. M. Schmiedeshoff, F. R. Drymiotis, G. Chapline, S. Basu, P. S. Riseborough

Abstract: The $γ\to α$ isostructural transition in the Ce$_{0.9-x}$La$_x$Th$_{0.1}$ system is measured as a function of La alloying using specific heat, magnetic susceptibility, resistivity, thermal expansivity/striction measurements. A line of discontinuous transitions, as indicated by the change in volume, decreases exponentially from 118 K to close to zero with increasing La doping and the transition c… ▽ More The $γ\to α$ isostructural transition in the Ce$_{0.9-x}$La$_x$Th$_{0.1}$ system is measured as a function of La alloying using specific heat, magnetic susceptibility, resistivity, thermal expansivity/striction measurements. A line of discontinuous transitions, as indicated by the change in volume, decreases exponentially from 118 K to close to zero with increasing La doping and the transition changes from being first-order to continuous at a critical concentration $0.10 \leq x_c \leq 0.14$. At the tricritical point, the coefficient of the linear $T$ term in the specific heat $γ$ and the magnetic susceptibility start to increase rapidly near $x$ = 0.14 and gradually approaches large values at $x$=0.35 signifying that a heavy Fermi-liquid state evolves at large doping. Near $x_c$, the Wilson ratio, $R_W$, has a value of 3.0, signifying the presence of magnetic fluctuations. Also, the low-temperature resistivity shows that the character of the low-temperature Fermi-liquid is changing. △ Less

Submitted 13 August, 2006; originally announced August 2006.

Report number: LA-UR-06-2070

Journal ref: Phys. Rev. Lett. 97, 235701 (2006)

Electronic Instabilities in Shape-Memory Alloys

Authors: J. C. Lashley, R. K. Schulze, B. Mihaila, W. L. Hults, J. L. Smith, P. S. Risenborogh, C. P. Opeil, R. A. Fisher, O. Svietelskiy, A. Suslov, A. Planes, L. Manosa, T. R. Finlayson

Abstract: Using a variety of thermodynamic measurements made in magnetic fields, we show evidence that the diffusionless transition (DT) in many shape-memory alloys is related to significant changes in the electronic structure. We investigate three alloys that show the shape-memory effect (In-24 at.% Tl, AuZn, and U-26 at.% Nb). We observe that the DT is significantly altered in these alloys by the applic… ▽ More Using a variety of thermodynamic measurements made in magnetic fields, we show evidence that the diffusionless transition (DT) in many shape-memory alloys is related to significant changes in the electronic structure. We investigate three alloys that show the shape-memory effect (In-24 at.% Tl, AuZn, and U-26 at.% Nb). We observe that the DT is significantly altered in these alloys by the application of a magnetic field. Specifically, the DT in InTl-24 at.% shows a decrease in the DT temperature with increasing magnetic field. Further investigations of AuZn were performed using an ultrasonic pulse-echo technique in magnetic fields up to 45 T. Quantum oscillations in the speed of the longitudinal sound waves propagating in the [110] direction indicated a strong acoustic de Haas-van Alphen-type effect and give information about part of the Fermi surface. △ Less

Submitted 20 March, 2007; v1 submitted 11 July, 2006; originally announced July 2006.

Comments: 5 figures

Report number: LA-UR-06-4738

Journal ref: Phys. Rev. B 75, 205119 (2007)

Valence-Band UPS, 6$p$ Core-Level XPS Photoemission Spectroscopy, and Low-Energy Electron Diffraction of a Uranium (001) Single Crystal

Authors: C. P. Opeil, R. K. Schulze, M. E. Manley, J. C. Lashley, W. L. Hults, R. J. Hanrahan, Jr., J. L. Smith, B. Mihaila, K. B. Blagoev, R. C. Albers, P. B. Littlewood

Abstract: Valence-band ultraviolet photoemission spectroscopy (UPS) at 173K and 6p core-level X-ray photoemission spectroscopy (XPS) at room temperature were performed on a high quality uranium single crystal. Significant agreement is found with first-principles electronic band-structure calculations, using a generalized gradient approximation (GGA). In addition, using Low Energy Electron Diffraction (LEE… ▽ More Valence-band ultraviolet photoemission spectroscopy (UPS) at 173K and 6p core-level X-ray photoemission spectroscopy (XPS) at room temperature were performed on a high quality uranium single crystal. Significant agreement is found with first-principles electronic band-structure calculations, using a generalized gradient approximation (GGA). In addition, using Low Energy Electron Diffraction (LEED) for the (001) surface, we find a well-ordered orthorhombic crystallographic structure representative of the bulk material. △ Less

Submitted 17 April, 2006; originally announced April 2006.

Report number: LA-UR-06-2505

Journal ref: Phys. Rev. B 73, 165109 (2006)

Pinning frequencies of the collective modes in $α$-uranium

Authors: B. Mihaila, C. P. Opeil, F. R. Drymiotis, J. L. Smith, J. C. Cooley, M. E. Manley, A. Migliori, C. Mielke, T. Lookman, A. Saxena, A. R. Bishop, K. B. Blagoev, D. J. Thoma, B. E. Lang, J. Boerio-Goates, B. F. Woodfield, G. M. Schmiedeshoff, J. C. Lashley

Abstract: Uranium is the only known element that features a charge-density wave (CDW) and superconductivity. We report a comparison of the specific heat of single-crystal and polycrystalline $α$-uranium. \red{Away from the the phase transition the specific heat of the polycrystal is larger than that of the single crystal, and the aim of this paper is to explain this difference.} In the single crystal we f… ▽ More Uranium is the only known element that features a charge-density wave (CDW) and superconductivity. We report a comparison of the specific heat of single-crystal and polycrystalline $α$-uranium. \red{Away from the the phase transition the specific heat of the polycrystal is larger than that of the single crystal, and the aim of this paper is to explain this difference.} In the single crystal we find excess contributions to the heat capacity at 41 K, 38 K, and 23 K, with a Debye temperature, $Θ_D$ = 256 K. In the polycrystalline sample the heat capacity curve is thermally broadened ($Θ_D$ = 184 K), but no excess heat capacity was observed. The excess heat capacity, $C_φ$ (taken as the difference between the single crystal and polycrystal heat capacities) is well described in terms of collective-mode excitations above their respective pinning frequencies. This attribution is represented by a modified Debye spectrum with two cutoff frequencies, a pinning frequency, $ν_o$, for the pinned CDW (due to grain boundaries in the polycrystal), and a normal Debye acoustic frequency occurring in the single crystal. We explain the 50-year-old difference in Debye temperatures between heat capacity and ultrasonic measurements. △ Less

Submitted 22 January, 2006; originally announced January 2006.

Report number: LA-UR-05-3234

Journal ref: Phys. Rev. Lett. 96, 076401 (2006)

Magnetic anisotropy and de Haas - van Alphen oscillations in a Bi microwire array studied via cantilever magnetometry at low temperatures

Authors: M. J. Graf, C. P. Opeil, T. E. Huber

Abstract: We report measurements of the low temperature (T = 0.5 K) oscillatory magnetization in a high-density array of 50 micron diameter wires of polycrystalline Bi utilizing a high sensitivity silicon cantilever magnetometer. We find that the magnetic response is strongly anisotropic, being much larger for magnetic field perpendicular than for fields parallel to the wire-axis. We argue that this is a… ▽ More We report measurements of the low temperature (T = 0.5 K) oscillatory magnetization in a high-density array of 50 micron diameter wires of polycrystalline Bi utilizing a high sensitivity silicon cantilever magnetometer. We find that the magnetic response is strongly anisotropic, being much larger for magnetic field perpendicular than for fields parallel to the wire-axis. We argue that this is a geometric effect caused by the large aspect ratio of the individual microwires in the array. The magnetic response of the microwires is dominated by the light electrons due to the larger cyclotron orbits in comparison with the heavier holes. We find that de Haas - van Alphen oscillations are easily resolved, and discuss the application of this technique to the study of Bi nanowire arrays. △ Less

Submitted 6 November, 2003; originally announced November 2003.

Comments: 21 pages, 7 figures

Journal ref: Journal of Low Temperature Physics 134, 1055 (2004)

Onset of antiferromagnetism in UPt_{3} via Th-substitution studied by muon spin spectroscopy

Authors: M. J. Graf, A. de Visser, C. P. Opeil, J. C. Cooley, J. L. Smith, A. Amato, C. Baines, F. Gygax, A. Schenck

Abstract: Muon spin spectroscopy has been used to study in detail the onset of large-moment antiferromagnetism (LMAF) in UPt_{3} as induced by Th substitution. Zero-field experiments have been carried out on a series of polycrystalline U_{1-x}Th_{x}Pt_{3} (0 <= x <= 0.05) samples in the temperature range 0.04 - 10 K. At low Th content (x <= 0.002) magnetic ordering on the time scale of the uSR experiment… ▽ More Muon spin spectroscopy has been used to study in detail the onset of large-moment antiferromagnetism (LMAF) in UPt_{3} as induced by Th substitution. Zero-field experiments have been carried out on a series of polycrystalline U_{1-x}Th_{x}Pt_{3} (0 <= x <= 0.05) samples in the temperature range 0.04 - 10 K. At low Th content (x <= 0.002) magnetic ordering on the time scale of the uSR experiment (10^{-8} s) is not detected. For x = 0.005 a weak magnetic signal appears below T = 2 K, while for 0.006 <= x <= 0.05, spontaneous oscillations in the uSR spectra signal the presence of the LMAF phase. The data are well described by a two-component depolarization function, combining the contribution of a polycrystalline antiferromagnet and a Kubo-Lorentzian response. However, the transition into the antiferromagnetic phase is quite broad. For x = 0.01 and 0.02, a weak magnetic signal appears below about 7 K, which is well above the mean-field transition temperatures. The broadening may be a result of the effects of disorder on the time fluctuations associated with anomalous small-moment antiferromagnetism. △ Less

Submitted 6 November, 2003; v1 submitted 2 July, 2003; originally announced July 2003.

Comments: 29 pages, 9 figures

Journal ref: Physical Review B 68, 224421 (2003)