-
Establishment of global phase coherence in a highly disordered fractal MgO/MgB2 nanocomposite: Roles of interface, morphology and defect
Authors:
Iku Nakaaki,
Aoi Hashimoto,
Shun Kondo,
Yuichi Ikuhara,
Shuuichi Ooi,
Minoru Tachiki,
Shunichi Arisawa,
Akiko Nakamura,
Taku Moronaga,
Jun Chen,
Hiroyo Segawa,
Takahiro Sakurai,
Hitoshi Ohta,
Takashi Uchino
Abstract:
Recently, we have reported that a highly disordered fractal MgO/MgB2 nanocomposite exhibits bulk-like superconducting properties with isotropic pinning, showing an excellent phase-coherent capability irrespective of the low volume fraction (~30 vol. %) of MgB2 [Uchino et al., Phys. Rev. B 101, 035146 (2020); Teramachi et al,, Phys. Rev. B 108, 155146 (2023)]. Hence, this nanocomposite provides a u…
▽ More
Recently, we have reported that a highly disordered fractal MgO/MgB2 nanocomposite exhibits bulk-like superconducting properties with isotropic pinning, showing an excellent phase-coherent capability irrespective of the low volume fraction (~30 vol. %) of MgB2 [Uchino et al., Phys. Rev. B 101, 035146 (2020); Teramachi et al,, Phys. Rev. B 108, 155146 (2023)]. Hence, this nanocomposite provides a useful experimental system to investigate the relationship between the structural disorder and the establishment of the superconducting phase coherence. In this work, we show from 3D focused ion beam scanning electron microscopy (FIB-SEM) data that in the nanocomposite, a complex MgO/MgB2 microstructure spreads isotropically throughout the sample with a constant fractal dimension of ~1.67. Atomic-resolution scanning transmission electron microscopy (STEM) has revealed that the MgO/MgB2 interfaces are atomically clean and free from amorphous grain boundaries, even leading to atomically coherent interfaces. Detailed ac susceptibility measurements have demonstrated a smooth crossover from an intragranular to an intergranular superconducting regime, giving evidence of the establishment of the critical state due to strong intergranular coupling just below the superconducting transition temperature. Also, spatially-resolved cathodoluminescence measurements have demonstrated that oxygen vacancies in the MgO-rich phase tend to aggregate near the MgO/MgB2 boundary regions, forming long channels of oxygen vacancies through the nanocomposite. These channels of oxygen vacancies will contribute to the long-range carrier transfer and the related Andreev reflection via coherent tunneling of charge carriers among the oxygen vacancy sites.
△ Less
Submitted 30 June, 2025;
originally announced June 2025.
-
Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Authors:
Jie Zhou,
Qiming Zhang,
Jiarui Gong,
Yi Lu,
Yang Liu,
Haris Abbasi,
Haining Qiu,
Jisoo Kim,
Wei Lin,
Donghyeok Kim,
Yiran Li,
Tien Khee Ng,
Hokyung Jang,
Dong Liu,
Haiyan Wang,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor grafting offers a promising solution by directly forming electrically active, lattice-mismatched heterojunctions between dissimilar materials. Howeve…
▽ More
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor grafting offers a promising solution by directly forming electrically active, lattice-mismatched heterojunctions between dissimilar materials. However, its scalability and uniformity at the wafer level have yet to be demonstrated. This work demonstrates the achievement of highly uniform, reproducible results across silicon, sapphire, and gallium nitride (GaN) substrates using wafer-scale semiconductor grafting. To illustrate this scalability, we conducted an in-depth study of a grafted Si/GaN heterojunction, examining band alignment through X-ray photoelectron spectroscopy and confirming crystallinity and interfacial integrity with scanning transmission electron microscopy. The resulting p-n diodes exhibit significantly enhanced electrical performance and wafer-scale uniformity compared to conventional approaches. This work establishes wafer-scale semiconductor grafting as a versatile and scalable technology, bridging the gap between laboratory-scale research and industrial manufacturing for heterogeneous semiconductor integration, and paving the way for novel, high-performance electronic and optoelectronic devices.
△ Less
Submitted 12 November, 2024;
originally announced November 2024.
-
Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Authors:
Jie Zhou,
Yifan Wang,
Ziqian Yao,
Qingxiao Wang,
Yara S. Banda,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Yi Lu,
Tsung-Han Tsai,
Yiran Li,
Vincent Gambin,
Tien Khee Ng,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through…
▽ More
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through chemical oxidation and atomic layer deposition (ALD). Scanning transmission electron microscopy (STEM) confirmed the formation of the UOL and the single crystallinity of the grafted junction. The resulting tunnel diodes consistently exhibited negative differential resistance (NDR) behavior at room temperature, with a high maximum peak-to-valley current ratio (PVCR) of 36.38, valley voltages ranging from 1.3 to 1.8 V, and a peak tunneling current density of 0.95 kA/cm2. This study not only highlights the critical roles of the UOL as both an interface improvement layer and a quantum tunneling medium, but also establishes "semiconductor grafting" as an effective and versatile method for high-performance, lattice-mismatched heterojunction devices.
△ Less
Submitted 24 September, 2024;
originally announced September 2024.
-
Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Authors:
Jiarui Gong,
Jie Zhou,
Ashok Dheenan,
Moheb Sheikhi,
Fikadu Alema,
Tien Khee Ng,
Shubhra S. Pasayat,
Qiaoqiang Gan,
Andrei Osinsky,
Vincent Gambin,
Chirag Gupta,
Siddharth Rajan,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi…
▽ More
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures.
△ Less
Submitted 1 December, 2023;
originally announced December 2023.
-
Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
Authors:
Jie Zhou,
Moheb Sheikhi,
Ashok Dheenan,
Haris Abbasi,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Vincent Gambin,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka…
▽ More
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$.
△ Less
Submitted 5 October, 2023;
originally announced October 2023.
-
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Authors:
Jie Zhou,
Ashok Dheenan,
Jiarui Gong,
Carolina Adamo,
Patrick Marshall,
Moheb Sheikhi,
Tsung-Han Tsai,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Gambin Vincent,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr…
▽ More
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.
△ Less
Submitted 14 August, 2023; v1 submitted 12 August, 2023;
originally announced August 2023.
-
Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Authors:
Jiarui Gong,
Donghyeok Kim,
Hokyung Jang,
Fikadu Alema,
Qingxiao Wang,
Tien Khee Ng,
Shuoyang Qiu,
Jie Zhou,
Xin Su,
Qinchen Lin,
Ranveer Singh,
Haris Abbasi,
Kelson Chabak,
Gregg Jessen,
Clincy Cheung,
Vincent Gambin,
Shubhra S. Pasayat,
Andrei Osinsky,
Boon,
S. Ooi,
Chirag Gupta,
Zhenqiang Ma
Abstract:
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se…
▽ More
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors.
△ Less
Submitted 30 May, 2023;
originally announced May 2023.
-
Strong phase coherence and vortex matter in a fractal system with proximity-induced superconductivity
Authors:
Nanami Teramachi,
Aoi Hashimoto,
Iku Nakaaki,
Shuuichi Ooi,
Minoru Tachiki,
Shunichi Arisawa,
Yusuke Seto,
Takahiro Sakurai,
Hitoshi Ohta,
Jaroslav Valenta,
Naohito Tsujii,
Takao Mori,
Takashi Uchino
Abstract:
The proximity effect in normal/superconductor heterostructures is an intriguing phenomenon in that the normal side takes on the properties of a superconductor with an induced gap. However, the structural and pinning properties of vortices inside the normal regions remain poorly understood. Here, we report structure and superconducting properties of a proximity-coupled Mg/MgO/MgB2 system with ~30 v…
▽ More
The proximity effect in normal/superconductor heterostructures is an intriguing phenomenon in that the normal side takes on the properties of a superconductor with an induced gap. However, the structural and pinning properties of vortices inside the normal regions remain poorly understood. Here, we report structure and superconducting properties of a proximity-coupled Mg/MgO/MgB2 system with ~30 vol. % of superconducting MgB2, in which MgB2 nanograins are distributed in a fractal manner to form a proximity network with clean interfaces. Conductivity and magnetic measurements demonstrate that this proximity-coupled system acts as a fully phase coherent superconductor with isotropic pinning. Magneto-optical imaging also reveals a rather homogeneous flux density distribution with no apparent granularity. Furthermore, we observe quantized proximity vortices and their clustering behavior by scanning superconducting quantum interface device microscopy. These results show that in contrast to the case of conventional granular superconductors, the grain boundaries in the present sample carry high critical currents and have high vortex pinning efficiency, resulting in a robust phase coherent state irrespective of the low volume fraction of the MgB2 nanograins. This finding not only reveals the features of proximity-induced vortices, but also demonstrates an excellent phase-locked capability of the proximity-coupled fractal system.
△ Less
Submitted 5 October, 2022; v1 submitted 18 September, 2022;
originally announced September 2022.
-
Protecting and Enhancing the Photoelectrocatalytic Nitrogen Reduction to Ammonia Performance of InGaN Nanowires using Mo2C Nanosheets and GaN Buffer Layer
Authors:
Paulraj Gnanasekar,
Karthik Peramaiy,
Huafan Zhang,
Tien Khee Ng,
Kuo-Wei Huang,
Jeganathan Kulandaivel,
Boon S. Ooi
Abstract:
Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation cu…
▽ More
Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation current under illumination was briefly elucidated. Large NH3 production of 7.2 gh-1cm-2 with high Faradaic efficiency of 12.6 % was realized at -0.2 V vs. reversible hydrogen electrode for the Mo2C/GaN/InGaN heterostructure. Notably, the proposed heterostructure also exemplifies excellent stability and reproducibility with excellent selectivity in the long-term chronoamperometry analysis. Further, the incorporation of GaN buffer layer in between Mo2C and InGaN NWs was deeply investigated. From Density Functional Theory (DFT) analysis, the incorporation of GaN buffer layer aids the suitable band edge position for the transfer of photogenerated charge carrier from InGaN to Mo2C co-catalyst, and unique 3d orbital of Mo2C is highly suitable to hold N2 for effective reduction to NH3.
△ Less
Submitted 26 May, 2022;
originally announced May 2022.
-
Influences of ALD Al$_2$O$_3$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors
Authors:
Jiarui Gong,
Jisoo Kim,
TienKhee Ng,
Kuangye Lu,
Donghyeok Kim,
Jie Zhou,
Dong Liu,
Jeehwan Kim,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al$_2$O$_3$ at the interface of Si/GaN and GaAs/GaN, has sh…
▽ More
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al$_2$O$_3$ at the interface of Si/GaN and GaAs/GaN, has shown the feasibility to overcome the poor p-type doping challenge of GaN by providing epitaxy-like interface quality. However, the surface band-bending of GaN that could be influenced by the UO Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with UO Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the UO Al2O3 can help in suppressing the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend of the upward band-bending energy from 0.48 eV down to 0.12 eV as the number of UO Al2O3 deposition cycles is increased from 0 to 20 cycles. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the change in the density of fixed charge at the GaN surface caused by UO Al2O3 is the main reason for the surface band-bending modulation. The potential implication of the surface band-bending results of AlGaAs/GaAs/GaN npn heterojunction bipolar transistor (HBT) was preliminarily studied via Silvaco(R) simulations.
△ Less
Submitted 9 September, 2021;
originally announced September 2021.
-
Critical states in superconducting plate: Structure dependence
Authors:
Shinsuke Ooi,
Masaru Kato
Abstract:
We study vortex penetration into two-layer structures of superconducting plates under a perpendicular magnetic field. We solve the heat transport equation and the Maxwell equations with the current-voltage relation for superconductor, simultaneously, and obtain magnetic flux and current densities. We show how magnetic flux structure depends on the structure, especially distance of two-layer of sup…
▽ More
We study vortex penetration into two-layer structures of superconducting plates under a perpendicular magnetic field. We solve the heat transport equation and the Maxwell equations with the current-voltage relation for superconductor, simultaneously, and obtain magnetic flux and current densities. We show how magnetic flux structure depends on the structure, especially distance of two-layer of superconductors.
△ Less
Submitted 8 February, 2019;
originally announced February 2019.
-
Visualizing the Pt doping effect on surface and electronic structure in Ir_{1-x}Pt_{x}Te_{2} by scanning tunneling microscopy and spectroscopy
Authors:
Y. Fujisawa,
T. Machida,
K. Igarashi,
A. Kaneko,
T. Mochiku,
S. Ooi,
M. Tachiki,
K. Komori,
K. Hirata,
H. Sakata
Abstract:
We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a triangular lattice of topmost Te atoms. The compounds that undergo structural transition have supermodulation with a fixed wave vector $q = \frac{2π}{5a_m}$ (w…
▽ More
We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a triangular lattice of topmost Te atoms. The compounds that undergo structural transition have supermodulation with a fixed wave vector $q = \frac{2π}{5a_m}$ (where $a_m$ is the lattice constant in the monoclinic phase) despite the different Pt concentrations. The superconducting compounds show patch structures. The surface of the compound that exhibits neither the superconductivity nor the structural transition shows no superstructure. In all doped samples, the dopant is observed as a dark spot in STM images. The tunneling spectra near the dopant show the change in the local density of state at approximately -200 mV. Such microscopic effects of the dopant give us the keys for establishing a microscopic model of this material.
△ Less
Submitted 3 March, 2015;
originally announced March 2015.
-
Role of stress-assisted martensite in the design of strong ultrafine-grained duplex steels
Authors:
Hung-Wei Yen,
Steve Woei Ooi,
Mehdi Eizadjou,
Andrew Breen,
Ching-Yuan Huang,
H. K. D. H. Bhadeshia,
Simon P. Ringer
Abstract:
This work explains the occurrence of transformation-induced plasticity via stress-assisted martensite, when designing ultrafine-grained duplex steels. It is found that, when the austenite is reduced to a fine scale of about 300 nm, the initial deformation-induced microstructure can be dominated by parallel lamellae of epsilon martensite or mechanical twinning, which cannot efficiently provide nucl…
▽ More
This work explains the occurrence of transformation-induced plasticity via stress-assisted martensite, when designing ultrafine-grained duplex steels. It is found that, when the austenite is reduced to a fine scale of about 300 nm, the initial deformation-induced microstructure can be dominated by parallel lamellae of epsilon martensite or mechanical twinning, which cannot efficiently provide nucleation sites for strain-induced martensite. Hence, alpha martensite nucleation occurs independently by a stress-assisted process that enhances transformation-induced plasticity in ultrafine-grained austenite. This metallurgical principle was validated experimentally by using a combination of transmission Kikuchi diffraction mapping, transmission electron microscopy, and atom probe microscopy, and demonstrated theoretically by the thermodynamics model of stress-assisted martensite.
△ Less
Submitted 4 November, 2014; v1 submitted 22 January, 2014;
originally announced January 2014.
-
Visualization of the effect of structural supermodulation on electronic structure in IrTe$_{2}$ by scanning tunneling spectroscopy
Authors:
T. Machida,
Y. Fujisawa,
K. Igarashi,
A. Kaneko,
S. Ooi,
T. Mochiku,
M. Tachiki,
K. Komori,
K. Hirata,
H. Sakata
Abstract:
We report on the scanning tunneling spectroscopy experiments on single crystals of IrTe$_{2}$. A structural supermodulation and a local density-of-states (LDOS) modulation with a wave vector of $q$ = 1/5$\times$$2π/a_{0}$ ($a_{0}$ is the lattice constant in the $ab$-plane) have been observed at 4.2K where the sample is in the monoclinic phase. %We cannot find an energy gap emerging reproducibly.%…
▽ More
We report on the scanning tunneling spectroscopy experiments on single crystals of IrTe$_{2}$. A structural supermodulation and a local density-of-states (LDOS) modulation with a wave vector of $q$ = 1/5$\times$$2π/a_{0}$ ($a_{0}$ is the lattice constant in the $ab$-plane) have been observed at 4.2K where the sample is in the monoclinic phase. %We cannot find an energy gap emerging reproducibly.% on the region where the supermodulation resides. As synchronized with the supermodulation, the LDOS spatially modulates within two energy ranges (below -200 meV and around -100 meV). We further investigated the effect of the local perturbations including the antiphase boundaries and the twin boundaries on the LDOS. These perturbations also modify the LDOS below -200 meV and around -100 meV, even though the lattice distortions induced by these perturbations appear to be different from those by the supermodulation. Our results indicating several microscopic structural effects on the LDOS seem to offer crucial keys for the establishment of the microscopic model describing the parent state.
△ Less
Submitted 3 December, 2013;
originally announced December 2013.
-
Observation of isosceles triangular electronic structure around excess iron atoms in Fe$_{1+δ}$Te
Authors:
T. Machida,
K. Kogure,
T. Kato,
H. Nakamura,
H. Takeya,
T. Mochiku,
S. Ooi,
Y. Mizuguchi,
Y. Takano,
K. Hirata,
H. Sakata
Abstract:
We present scanning tunneling microscopy and spectroscopy studies around an individual excess Fe atom, working as a local perturbation, in the parent material of the iron-chalcogenide superconductor Fe$_{1+δ}$Te. Spectroscopic imaging reveals a novel isosceles triangular electronic structure around the excess Fe atoms. Its spatial symmetry reects the underlying bicollinear antiferromagnetic spin s…
▽ More
We present scanning tunneling microscopy and spectroscopy studies around an individual excess Fe atom, working as a local perturbation, in the parent material of the iron-chalcogenide superconductor Fe$_{1+δ}$Te. Spectroscopic imaging reveals a novel isosceles triangular electronic structure around the excess Fe atoms. Its spatial symmetry reects the underlying bicollinear antiferromagnetic spin state and the structural monoclinic symmetry. These findings provide important clues to understand the role of the excess Fe atoms, which complicate the understanding of the phenomena occurring in iron-chalcogenide materials.
△ Less
Submitted 30 May, 2013;
originally announced May 2013.
-
Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film
Authors:
Damián P. San-Román-Alerigi,
Dalaver H. Anjum,
Yaping Zhang,
Xiaoming Yang,
Ahmed Benslimane,
Tien K. Ng,
Mohammad Alsunaidi,
Boon S. Ooi
Abstract:
We investigate the effect of electron beam irradiation on the dielectric properties of As2S3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show, to the best of ou…
▽ More
We investigate the effect of electron beam irradiation on the dielectric properties of As2S3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show, to the best of our knowledge, a heretofore unseen phenomenon: the reduction in the permittivity of <40%, and consequently a modification of the refractive index follows, reducing it by 20%, hence suggesting a significant change on the optical properties of the material. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption.
△ Less
Submitted 29 March, 2013; v1 submitted 22 August, 2012;
originally announced August 2012.
-
Quantum Interference of Impurity Bound States in Bi$_{2}$Sr$_{2}$Ca(Cu$_{1-x}$Zn$_{x}$)$_{2}$O$_{8+δ}$ Probed by Scanning Tunneling Spectroscopy
Authors:
Tadashi Machida,
Takuya Kato,
Hiroshi Nakamura,
Masaki Fujimoto,
Takashi Mochiku,
Shuuichi Ooi,
Ajay D. Thakur,
Hideaki Sakata,
Kazuto Hirata
Abstract:
In conventional superconductors, magnetic impurities form an impurity band due to quantum interference of the impurity bound states, leading to suppression of the superconducting transition temperature. Such quantum interference effects can also be expected in d-wave superconductors. Here, we use scanning tunneling microscopy to investigate the effect of multiple non-magnetic impurities on the loc…
▽ More
In conventional superconductors, magnetic impurities form an impurity band due to quantum interference of the impurity bound states, leading to suppression of the superconducting transition temperature. Such quantum interference effects can also be expected in d-wave superconductors. Here, we use scanning tunneling microscopy to investigate the effect of multiple non-magnetic impurities on the local electronic structure of the high-temperature superconductor Bi$_{2}$Sr$_{2}$Ca(Cu$_{1-x}$Zn$_{x}$)$_{2}$O$_{8+δ}$. We find several fingerprints of quantum interference of the impurity bound states including: (i) a two-dimensional modulation of local density-of-states with a period of approximately 5.4 Å along the $a$- and $b$-axes, which is indicative of the d-wave superconducting nature of the cuprates; (ii) abrupt spatial variations of the impurity bound state energy; (iii)an appearance of positive energy states; (iv) a split of the impurity bound state. All of these findings provide important insight into how the impurity band in d-wave superconductors is formed.
△ Less
Submitted 24 May, 2011;
originally announced May 2011.
-
Unidirectional Electronic Structure in the Parent State of Iron-Chalcogenide Superconductor Fe$_{1+δ}$Te
Authors:
Tadashi Machida,
Kazuho Kogure,
Takuya Kato,
Hiroshi Nakamura,
Hiroyuki Takeya,
Takashi Mochiku,
Shuuichi Ooi,
Yoshikazu Mizuguchi,
Yoshihiko Takano,
Kazuto Hirata,
Hideaki Sakata
Abstract:
We use scanning tunnelling microscopy and spectroscopy to explore the electronic structure of Fe$_{1.07}$Te which is the parent compound of the iron-chalcogenide superconductors. A unidirectional electronic structure with a period of $a_{0}$ (where $a_{0}$ is the lattice constant) along the a-axis is observed. The unidirectional pattern is visible within an energy range from approximately -200 to…
▽ More
We use scanning tunnelling microscopy and spectroscopy to explore the electronic structure of Fe$_{1.07}$Te which is the parent compound of the iron-chalcogenide superconductors. A unidirectional electronic structure with a period of $a_{0}$ (where $a_{0}$ is the lattice constant) along the a-axis is observed. The unidirectional pattern is visible within an energy range from approximately -200 to +130 meV. Since the direction of the unidirectional electronic structure coincides with those of the underlying antiferromagnetic and the predicted orbital orders, it is presumable that the observed unidirectional structure is closely tied to these orders and is peculiar to the parent state in iron-based superconductors.
△ Less
Submitted 25 May, 2012; v1 submitted 24 May, 2011;
originally announced May 2011.
-
A New Noncentrosymmetric Superconducting Phase in the Li-Rh-B System
Authors:
Hiroyuki Takeya,
Hiroki Fujii,
Mohammed ElMassalami,
Francisco Chaves,
Shuuichi Ooi,
Takashi Mochiku,
Yoshihiko Takano,
Kazuto Hirata,
Kazumasa Togano
Abstract:
Superconductivity, at 2-3 K, was observed in a novel phase of the ternary Li-Rh-B system. The structural phase exhibits a large noncentrosymmetric cubic unit cell with the a-parameter being within 1.208 \leq a \leq 1.215 nm. This phase is stable over a wider compositional range of LixRhBy (0.6 < x < 2, 1 < y < 2). The superconductivity, as well as the unit cell volume, is sensitive to the Li/B con…
▽ More
Superconductivity, at 2-3 K, was observed in a novel phase of the ternary Li-Rh-B system. The structural phase exhibits a large noncentrosymmetric cubic unit cell with the a-parameter being within 1.208 \leq a \leq 1.215 nm. This phase is stable over a wider compositional range of LixRhBy (0.6 < x < 2, 1 < y < 2). The superconductivity, as well as the unit cell volume, is sensitive to the Li/B content but it is manifested with Tc \geq 1.8 K over a wider compositional range: the highest Tc \approx 3 K occurs for x : y \approx 0.9:1.5 with a \approx 1.209 nm. The superconducting shielding fraction of most samples is almost 80% of that of Sn. The lower critical field, Hc1(0), is ~65 Oe while the upper one, Hc2(0) is determined from extrapolation to be higher than 14 kOe. We discuss the influence of pressure on Tc and also the influence of the lack of inversion symmetry on the superconducting properties.
△ Less
Submitted 3 February, 2011;
originally announced February 2011.
-
Disappearance of zinc impurity resonance in large gap region on Bi$_{\mathrm{2}}$Sr$_{\mathrm{2}}$CaCu$_{\mathrm{2}}$O$_{\mathrm{8+}δ}$ probed by scanning tunneling spectroscopy
Authors:
Tadashi Machida,
Takuya Kato,
Hiroshi Nakamura,
Masaki Fujimoto,
Takashi Mochiku,
Shuuichi Ooi,
Ajay D. Thakur,
Hideaki Sakata,
Kazuto Hirata
Abstract:
Using Scanning tunneling spectroscopy (STS), we report the correlation between spatial gap inhomogeneity and the zinc (Zn) impurity resonance in single crystals of Bi$_{\mathrm{2}}$Sr$_{\mathrm{2}}$Ca(Cu$_{\mathrm{1-}x}$Zn$_{x}$)$_{\mathrm{2}}$O$_{\mathrm{8+}δ}$ with different carrier (hole) concentrations ($p$) at a fixed Zn concentration ($x$ $\sim$ 0.5 % per Cu atom). In all the samples, the im…
▽ More
Using Scanning tunneling spectroscopy (STS), we report the correlation between spatial gap inhomogeneity and the zinc (Zn) impurity resonance in single crystals of Bi$_{\mathrm{2}}$Sr$_{\mathrm{2}}$Ca(Cu$_{\mathrm{1-}x}$Zn$_{x}$)$_{\mathrm{2}}$O$_{\mathrm{8+}δ}$ with different carrier (hole) concentrations ($p$) at a fixed Zn concentration ($x$ $\sim$ 0.5 % per Cu atom). In all the samples, the impurity resonance lies only in the region where the gap value is less than $\sim$ 60 meV. Also the number of Zn resonance sites drastically decreases with decreasing $p$, in spite of the fixed $x$. These experimental results lead us to a conclusion that the Zn impurity resonance does not appear in the large gap region although the Zn impurity evidently resides in this region.
△ Less
Submitted 14 November, 2010; v1 submitted 27 October, 2010;
originally announced October 2010.
-
Local Measurement of Microwave Response with Local Tunneling Spectra Using Near Field Microwave Microscopy
Authors:
Tadashi Machida,
Marat B. Gaifullin,
Shuuichi Ooi,
Takuya Kato,
Hideaki Sakata,
Kazuto Hirata
Abstract:
We have designed and built a near-field scanning microwave microscope, which has been used to measure the local microwave response and the local density-of-states (LDOS) in the area including the boundary between the gold deposited and the non-deposited region on highly-orientated pyrolytic graphite at a frequency of about 7.3 GHz. We have succeeded in measuring the spatial variation of both the L…
▽ More
We have designed and built a near-field scanning microwave microscope, which has been used to measure the local microwave response and the local density-of-states (LDOS) in the area including the boundary between the gold deposited and the non-deposited region on highly-orientated pyrolytic graphite at a frequency of about 7.3 GHz. We have succeeded in measuring the spatial variation of both the LDOS and the surface resistance. It can be observed that the surface resistance in gold deposited region with the metallic tunneling spectra is smaller than that in the non-deposited region with the U-shaped tunneling spectra.
△ Less
Submitted 29 March, 2010;
originally announced March 2010.
-
History and metastability effects in the intermediate state of mesoscopic type I superconducting Indium
Authors:
Ajay D. Thakur,
Ujjal K. Gautam,
Goutam Sheet,
Tomonobu Nakayama,
Yoshio Bando,
Dmitri Goldberg,
Shuuichi Ooi,
Kazuto Hirata
Abstract:
We report detailed magnetic measurements on history and metastability effects in the intermediate state of mesoscopic cylinders of type I superconducting Indium. This includes the observation of topological hysteresis with the signature occurrence of different critical fields during flux entry and flux exit. We show the existence of a plethora of metastable configuration and recipes to access th…
▽ More
We report detailed magnetic measurements on history and metastability effects in the intermediate state of mesoscopic cylinders of type I superconducting Indium. This includes the observation of topological hysteresis with the signature occurrence of different critical fields during flux entry and flux exit. We show the existence of a plethora of metastable configuration and recipes to access them. We also demonstrate the manifestation of superheating and supercooling of superconducting and normal states, respectively across the superconductivity transition.
△ Less
Submitted 22 January, 2010;
originally announced January 2010.
-
Multi-vortex versus interstitial vortices scenario in superconducting antidot arrays
Authors:
A. D. Thakur,
S. Ooi,
S. P. Chockalingam,
J. Jesudasan,
P. Raychaudhuri,
K. Hirata
Abstract:
In superconducting thin films, engineered lattice of antidots (holes) act as an array of columnar pinning sites for the vortices and thus lead to vortex matching phenomena at commensurate fields guided by the lattice spacing. The strength and nature of vortex pinning is determined by the geometrical characteristics of the antidot lattice (such as the lattice spacing $a_0$, antidot diameter $d$,…
▽ More
In superconducting thin films, engineered lattice of antidots (holes) act as an array of columnar pinning sites for the vortices and thus lead to vortex matching phenomena at commensurate fields guided by the lattice spacing. The strength and nature of vortex pinning is determined by the geometrical characteristics of the antidot lattice (such as the lattice spacing $a_0$, antidot diameter $d$, lattice symmetry, orientation, etc) along with the characteristic length scales of the superconducting thin films, viz., the coherence length ($ξ$) and the penetration depth ($λ$). There are at least two competing scenarios: (i) multiple vortices sit on each of the antidots at a higher matching period, and, (ii) there is nucleation of vortices at the interstitial sites at higher matching periods. Furthermore it is also possible for the nucleated interstitial vortices to reorder under suitable conditions. We present our experimental results on NbN antidot arrays in the light of the above scenarios.
△ Less
Submitted 6 November, 2009; v1 submitted 5 November, 2009;
originally announced November 2009.
-
Observation of Vortex Matching Phenomena in Antidot Array of NbN Thin Film
Authors:
Ajay D. Thakur,
Shuuichi Ooi,
Subbaiah P. Chockalingam,
John Jesudasan,
Pratap Raychaudhuri,
Kazuto Hirata
Abstract:
We report vortex matching phenomenon in rectangular antidot array fabricated on epitaxial NbN thin film. The antidot array was fabricated using Focussed Ion Beam milling technique. The magneto-transport measurements points to a period doubling transition at higher magnetic field for rectangular lattices. The results are discussed within the light of several models including the multi-vortex mode…
▽ More
We report vortex matching phenomenon in rectangular antidot array fabricated on epitaxial NbN thin film. The antidot array was fabricated using Focussed Ion Beam milling technique. The magneto-transport measurements points to a period doubling transition at higher magnetic field for rectangular lattices. The results are discussed within the light of several models including the multi-vortex model, the matched lattice model and the super-matched lattice model.
△ Less
Submitted 4 February, 2010; v1 submitted 18 August, 2009;
originally announced August 2009.
-
Vortex matching effect in engineered thin films of NbN
Authors:
Ajay D. Thakur,
Shuuichi Ooi,
Subbaiah P. Chockalingam,
John Jesudasan,
Pratap Raychaudhuri,
Kazuto Hirata
Abstract:
We report robust vortex matching effects in antidot arrays fabricated on thin films of NbN. The near absence of hysteresis between field sweep directions indicates a negligible residual pinning in the host thin film. Owing to the very small coherence length of NbN thin films ($ξ< 5 nm$), the observations suggests the possibility of probing physics of vortices at true nanometer length scales in s…
▽ More
We report robust vortex matching effects in antidot arrays fabricated on thin films of NbN. The near absence of hysteresis between field sweep directions indicates a negligible residual pinning in the host thin film. Owing to the very small coherence length of NbN thin films ($ξ< 5 nm$), the observations suggests the possibility of probing physics of vortices at true nanometer length scales in suitably fabricated structures.
△ Less
Submitted 5 June, 2009; v1 submitted 24 March, 2009;
originally announced March 2009.
-
Focused-ion-beam-induced deposition of superconducting nanowires
Authors:
E. S. Sadki,
S. Ooi,
K. Hirata
Abstract:
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 n…
▽ More
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc= 1.5 10^5 A/cm2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.
△ Less
Submitted 19 October, 2004;
originally announced October 2004.
-
Investigating The Vortex Melting Phenomenon In BSCCO Crystals Using Magneto-Optical Imaging Technique
Authors:
A. Soibel,
S. S. Banerjee,
Y. Myasoedov,
M. L. Rappaport,
E. Zeldov,
S. Ooi,
T. Tamegai
Abstract:
Using a novel differential magneto-optical imaging technique we investigate the phenomenon of vortex lattice melting in crystals of Bi_2Sr_2CaCu_2O_8 (BSCCO). The images of melting reveal complex patterns in the formation and evolution of the vortex solid-liquid interface with varying field (H) or temperature (T). We believe that the complex melting patterns are due to a random distribution of m…
▽ More
Using a novel differential magneto-optical imaging technique we investigate the phenomenon of vortex lattice melting in crystals of Bi_2Sr_2CaCu_2O_8 (BSCCO). The images of melting reveal complex patterns in the formation and evolution of the vortex solid-liquid interface with varying field (H) or temperature (T). We believe that the complex melting patterns are due to a random distribution of material disorder or inhomogeneities across the sample, which create fluctuations in the local melting temperature or field value. To study the fluctuations in the local melting temperature / field, we have constructed maps of the melting landscape T_m(H,r), viz., the melting temperature (T_m) at a given location (r) in the sample at a given field (H). A study of these melting landscapes reveals an unexpected feature: the melting landscape is not fixed, but changes rather dramatically with varying field and temperature along the melting line. It is concluded that the changes in both the scale and shape of the landscape result from the competing contributions of different types of quenched disorder which have opposite effects on the local melting transition.
△ Less
Submitted 20 January, 2002;
originally announced January 2002.
-
Periodic Oscillations of Josephson-Vortex Flow Resistance in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+y}$
Authors:
Shuuichi Ooi,
Takashi Mochiku,
Kazuto Hirata
Abstract:
To study the Josephson-vortex system in the intrinsic Josephson junctions, we have measured the flow resistance as a function of magnetic field parallel to the $ab$ plane in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+y}$ single crystals. Although it was known that the flow resistance increases smoothly with increasing field, we have found novel oscillations of vortex flow resistance in the small current…
▽ More
To study the Josephson-vortex system in the intrinsic Josephson junctions, we have measured the flow resistance as a function of magnetic field parallel to the $ab$ plane in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+y}$ single crystals. Although it was known that the flow resistance increases smoothly with increasing field, we have found novel oscillations of vortex flow resistance in the small current regime. The period of the oscillations corresponds to the field which is needed to add ``{\it one}'' vortex quantum per ``{\it two}'' Josephson junctions. Commensurability between the lattice spacing of Josephson vortices along the $ab$ plane and the size of the junction is related to the flow velocity of vortices. The results show that Josephson vortices form triangular lattice in the state where the oscillations occur.
△ Less
Submitted 12 December, 2001;
originally announced December 2001.
-
Vortex Matter Transition in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+y}$ under Tilted Fields
Authors:
S. Ooi,
T. Shibauchi,
K. Itaka,
N. Okuda,
T. Tamegai
Abstract:
Vortex phase diagram under tilted fields from the $c$ axis in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+y}$ is studied by local magnetization hysteresis measurements using Hall probes. When the field is applied at large angles from the $c$ axis, an anomaly ($H_p^\ast$) other than the well-known peak effect ($H_p$) are found at fields below $H_p$. The angular dependence of the field $H_p^\ast$ is nonmono…
▽ More
Vortex phase diagram under tilted fields from the $c$ axis in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+y}$ is studied by local magnetization hysteresis measurements using Hall probes. When the field is applied at large angles from the $c$ axis, an anomaly ($H_p^\ast$) other than the well-known peak effect ($H_p$) are found at fields below $H_p$. The angular dependence of the field $H_p^\ast$ is nonmonotonic and clearly different from that of $H_p$ and depends on the oxygen content of the crystal. The results suggest existence of a vortex matter transition under tilted fields. Possible mechanisms of the transition are discussed.
△ Less
Submitted 12 December, 2000; v1 submitted 6 November, 2000;
originally announced November 2000.
-
Shear-induced vortex decoupling in Bi2Sr2CaCu2O8 crystals
Authors:
B. Khaykovich,
D. T. Fuchs,
K. Teitelbaum,
Y. Myasoedov,
E. Zeldov T. Tamegai,
S. Ooi,
M. Konczykowski,
R. A. Doyle,
S. F. W. R. Rycroft
Abstract:
Simultaneous transport and magnetization studies in Bi2Sr2CaCu2O8 crystals at elevated currents reveal large discrepancies, including finite resistivity at temperatures of 40K below the magnetic irreversibility line. This resistivity, measured at the top surface, is non-monotonic in temperature and extremely non-linear. The vortex velocity derived from magnetization is six orders of magnitude lo…
▽ More
Simultaneous transport and magnetization studies in Bi2Sr2CaCu2O8 crystals at elevated currents reveal large discrepancies, including finite resistivity at temperatures of 40K below the magnetic irreversibility line. This resistivity, measured at the top surface, is non-monotonic in temperature and extremely non-linear. The vortex velocity derived from magnetization is six orders of magnitude lower than the velocity derived from simultaneous transport measurements. The new findings are ascribed to a shear-induced decoupling, in which the pancake vortices flow only in the top few CuO2 planes, and are decoupled from the pinned vortices in the rest of the crystal.
△ Less
Submitted 9 March, 2000;
originally announced March 2000.
-
Evidence for field-induced excitations in low-temperature thermal conductivity of Bi_2Sr_2CaCu_2O_8
Authors:
H. Aubin,
K. Behnia,
S. Ooi,
T. Tamegai
Abstract:
The thermal conductivity ,$κ$, of Bi_2Sr_2CaCu_2O_8 was studied as a function of magnetic field. Above 5 K, after an initial decrease, $κ(H)$ presents a kink followed by a plateau, as recently reported by Krishana et al.. By contrast, below 1K, the thermal conductivity was found to \emph{increase} with increasing field. This behavior is indicative of a finite density of states and is not compati…
▽ More
The thermal conductivity ,$κ$, of Bi_2Sr_2CaCu_2O_8 was studied as a function of magnetic field. Above 5 K, after an initial decrease, $κ(H)$ presents a kink followed by a plateau, as recently reported by Krishana et al.. By contrast, below 1K, the thermal conductivity was found to \emph{increase} with increasing field. This behavior is indicative of a finite density of states and is not compatible with the existence of a field-induced fully gapped $d_{x^{2}-y^{2}}+id_{xy}$ state which was recently proposed to describe the plateau regime. Our low-temperature results are in agreement with recent works predicting a field-induced enhancement of thermal conductivity by Doppler shift of quasi-particle spectrum.
△ Less
Submitted 2 July, 1998;
originally announced July 1998.
-
Transport properties of BSCCO crystals with and without surface barriers
Authors:
Dan T. Fuchs,
Richard A. Doyle,
Eli Zeldov,
Steve F. W. R. Rycroft,
Tsuyoshi Tamegai,
Shuuichi Ooi,
Michael L. Rappaport,
Youri Myasoedov
Abstract:
Large BSCCO crystals with electrical contacts positioned far from the edges are studied by transport measurements, then cut into the common narrow strip geometry, and remeasured. Instead of showing larger resistance, the narrow strip samples display a dramatic drop in the resistance, enhanced activation energies, and nonlinear characteristics due to strong surface barriers. The surface barriers…
▽ More
Large BSCCO crystals with electrical contacts positioned far from the edges are studied by transport measurements, then cut into the common narrow strip geometry, and remeasured. Instead of showing larger resistance, the narrow strip samples display a dramatic drop in the resistance, enhanced activation energies, and nonlinear characteristics due to strong surface barriers. The surface barriers also dominate the resistive drop at the first-order phase transition. Because the surface barriers are avoided in large crystals, we are able to probe the solid phase and find good agreement with the recent predictions of Bragg glass theory.
△ Less
Submitted 1 July, 1998;
originally announced July 1998.
-
Possible new vortex matter phases in BSCCO
Authors:
Dan T. Fuchs,
Eli Zeldov,
Tsuyoshi Tamegai,
Shuuichi Ooi,
Michael Rappaport,
Hadas Shtrikman
Abstract:
The vortex matter phase diagram of BSCCO crystals is analyzed by investigating vortex penetration through the surface barrier in the presence of a transport current. The strength of the effective surface barrier, its nonlinearity, and asymmetry are used to identify a possible new ordered phase above the first-order transition. This technique also allows sensitive determination of the depinning t…
▽ More
The vortex matter phase diagram of BSCCO crystals is analyzed by investigating vortex penetration through the surface barrier in the presence of a transport current. The strength of the effective surface barrier, its nonlinearity, and asymmetry are used to identify a possible new ordered phase above the first-order transition. This technique also allows sensitive determination of the depinning temperature. The solid phase below the first-order transition is apparently subdivided into two phases by a vertical line extending from the multicritical point.
△ Less
Submitted 19 April, 1998;
originally announced April 1998.
-
Where does the transport current flow in Bi2Sr2CaCu2O8 crystals?
Authors:
Dan T. Fuchs,
Eli Zeldov,
Michael Rappaport,
Tsuyoshi Tamegai,
Shuuichi Ooi,
Hadas Shtrikman
Abstract:
A new measurement technique for investigation of vortex dynamics is introduced. The distribution of the transport current across a crystal is derived by a sensitive measurement of the self-induced magnetic field of the transport current. We are able to clearly mark where the flow of the transport current is characterized by bulk pinning, surface barrier, or a uniform current distribution. One of…
▽ More
A new measurement technique for investigation of vortex dynamics is introduced. The distribution of the transport current across a crystal is derived by a sensitive measurement of the self-induced magnetic field of the transport current. We are able to clearly mark where the flow of the transport current is characterized by bulk pinning, surface barrier, or a uniform current distribution. One of the novel results is that in BSCCO crystals most of the vortex liquid phase is affected by surface barriers resulting in a thermally activated apparent resistivity. As a result the standard transport measurements in BSCCO do not probe the dynamics of vortices in the bulk, but rather measure surface barrier properties.
△ Less
Submitted 26 November, 1997;
originally announced November 1997.
-
Comment on ``Plateaus Observed in the Field profile of Thermal Conductivity in the Superconductor Bi_2Sr_2CaCu_2O_8''
Authors:
H. Aubin,
K. Behnia,
S. Ooi,
T. Tamegai
Abstract:
We studied the thermal conductivity of a Bi_2Sr_2CaCu_2O_8 single crystal as a function of a magnetic field ramped up and down and then reversed. As recently discovered by Krishana et al., we observed a field-independent thermal conductivity above a threshold field. However, our measurements show that the magnitude of background thermal conductivity depends on the field profile in the sample. Th…
▽ More
We studied the thermal conductivity of a Bi_2Sr_2CaCu_2O_8 single crystal as a function of a magnetic field ramped up and down and then reversed. As recently discovered by Krishana et al., we observed a field-independent thermal conductivity above a threshold field. However, our measurements show that the magnitude of background thermal conductivity depends on the field profile in the sample. This is incompatible with the interpretation put forward by Krishana and co-workers.
△ Less
Submitted 11 November, 1997;
originally announced November 1997.
