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Unravelling the Band Structure and Orbital Character of a $π$-Conjugated 2D Graphdiyne-Based Organometallic Network
Authors:
Paolo D'Agosta,
Simona Achilli,
Francesco Tumino,
Alessio Orbelli Biroli,
Giovanni Di Santo,
Luca Petaccia,
Giovanni Onida,
Andrea Li Bassi,
Jorge Lobo-Checa,
Carlo S. Casari
Abstract:
Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importa…
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Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importance for fundamental studies. In this work, we present the on-surface synthesis of a highly crystalline 2D organometallic network grown on Ag(111). The electronic structure of this mixed honeycomb-kagome arrangement - investigated by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy - reveals a strong electronic conjugation within the network, leading to the formation of two intense electronic band-manifolds. In comparison to theoretical density functional theory calculations, we observe that these bands exhibit a well-defined orbital character that can be associated with distinct regions of the sp-sp$^2$ monomers. Moreover, we find that the halogen by-products resulting from the network formation locally affect the pore-confined states, causing a significant energy shift. This work contributes to the understanding of the growth and electronic structure of graphdiyne-like 2D networks, providing insights into the development of novel carbon materials beyond graphene with tailored properties.
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Submitted 10 April, 2024;
originally announced April 2024.
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Steric hindrance in the on-surface synthesis of diethynyl-linked anthracene polymers
Authors:
Simona Achilli,
Francesco Tumino,
Andi Rabia,
Alessio Orbelli Biroli,
Andrea Li Bassi,
Alberto Bossi,
Nicola Manini,
Giovanni Onida,
Guido Fratesi,
Carlo Spartaco Casari,
---
Abstract:
Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric…
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Hybrid sp-sp2 structures can be efficiently obtained on metal substrates via on-surface synthesis. The choice of both the precursor and of the substrate impacts on the effectiveness of the process and the stability of the formed structures. Here we demonstrate that using anthracene-based molecules as precursor, the formation on Au(111) of polymers hosting sp carbon chains is affected by the steric hindrance between aromatic groups. In particular, by scanning tunneling microscopy and density functional theory calculations we show that the de-metalation of organometallic structures induces a lateral separation of adjacent polymers preventing the formation of ordered domains.
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Submitted 14 March, 2022;
originally announced March 2022.
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Graphdiynes interacting with metal surfaces: first-principles electronic and vibrational properties
Authors:
Simona Achilli,
Alberto Milani,
Guido Fratesi,
Francesco Tumino,
Nicola Manini,
Giovanni Onida,
Carlo S. Casari
Abstract:
Graphdiynes (GDYs) represent a class of 2D carbon materials based on sp-sp$^2$ hybridization with appealing properties and potential applications. Recent advances have demonstrated the experimental self-assembly of GDYs on metal substrates. Here we focus on $α$- and $β$-GDYs on Au(111) and Pt(111), and investigate how their electronic and vibrational properties are affected by the interaction with…
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Graphdiynes (GDYs) represent a class of 2D carbon materials based on sp-sp$^2$ hybridization with appealing properties and potential applications. Recent advances have demonstrated the experimental self-assembly of GDYs on metal substrates. Here we focus on $α$- and $β$-GDYs on Au(111) and Pt(111), and investigate how their electronic and vibrational properties are affected by the interaction with a metal substrate. We adopt hydrogenated GDY, previously characterized experimentally, as a benchmark for density functional theory simulations, that we apply to show that Au and Pt substrates impose a different degree of distortion on both $α$- and $β$-GDY. By comparing the adsorbed and the freestanding structures, we evaluate the effect of the surface interaction on the bandstructure and the simulated Raman spectra. Different charge transfers result in different energy shift of the Dirac cone in semi-metallic $α$-GDY and changes from semiconducting to metallic behavior for $β$-GDY. These changes in electronic properties are accompanied by characteristic frequency shifts and modifications of Raman active modes. Our results contribute in the understanding of the metal-interaction effects on GDYs and can open a route to the design of novel 2D materials with tailored properties.
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Submitted 1 November, 2021;
originally announced November 2021.
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Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms
Authors:
Simona Achilli,
Nguyen H. Le,
Guido Fratesi,
Nicola Manini,
Giovanni Onida,
Marco Turchetti,
Giorgio Ferrari,
Takahiro Shinada,
Takashi Tanii,
Enrico Prati
Abstract:
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investi…
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Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.
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Submitted 4 February, 2021; v1 submitted 2 February, 2021;
originally announced February 2021.
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Structural, Electronic, and Vibrational Properties of 2D Graphdiyne-Like Carbon Nanonetwork Synthesized on Au(111): Implications for the Engineering of sp-sp2 Carbon Nanostructures
Authors:
Andi Rabia,
Francesco Tumino,
Alberto Milani,
Valeria Russo,
Andrea Li Bassi,
Nicolò Bassi,
Andrea Lucotti,
Simona Achilli,
Guido Fratesi,
Nicola Manini,
Giovanni Onida,
Qiang Sun,
Wei Xu,
Carlo S. Casari
Abstract:
Graphdiyne, atomically-thin 2D carbon nanostructure based on sp-sp2 hybridization, is an appealing system potentially showing outstanding mechanical and optoelectronic properties. Surface-catalyzed coupling of halogenated sp-carbon-based molecular precursors represents a promising bottom-up strategy to fabricate extended 2D carbon systems with engineered structure on metallic substrates. Here, we…
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Graphdiyne, atomically-thin 2D carbon nanostructure based on sp-sp2 hybridization, is an appealing system potentially showing outstanding mechanical and optoelectronic properties. Surface-catalyzed coupling of halogenated sp-carbon-based molecular precursors represents a promising bottom-up strategy to fabricate extended 2D carbon systems with engineered structure on metallic substrates. Here, we investigate the atomic-scale structure and electronic and vibrational properties of an extended graphdiyne-like sp-sp2 carbon nanonetwork grown on Au(111) by means of on-surface synthesis. The formation of such 2D nanonetwork at its different stages as a function of the annealing temperature after the deposition is monitored by scanning tunneling microscopy (STM), Raman spectroscopy and combined with density functional theory (DFT) calculations. High-resolution STM imaging and the high sensitivity of Raman spectroscopy to the bond nature provide a unique strategy to unravel the atomic-scale properties of sp-sp2 carbon nanostructures. We show that hybridization between the 2D carbon nanonetwork and the underlying substrate states strongly affects its electronic and vibrational properties, modifying substantially the density of states and the Raman spectrum compared to the free standing system. This opens the way to the modulation of the electronic properties with significant prospects in future applications as active nanomaterials for catalysis, photoconversion and carbon-based nanoelectronics.
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Submitted 24 November, 2020;
originally announced November 2020.
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GeVn complexes for silicon-based room-temperature single-atom nanoelectronics
Authors:
Simona Achilli,
Nicola Manini,
Giovanni Onida,
Takahiro Shinada,
Takashi Tanii,
Enrico Prati
Abstract:
We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these defects, including charge transition levels corresponding to the addition of one or more electrons to the defect. Our main theoretical result concerns the GeV com…
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We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these defects, including charge transition levels corresponding to the addition of one or more electrons to the defect. Our main theoretical result concerns the GeV complex, which we show to give rise to two excited states deep in the gap, at -0.51 and -0.35 eV from the conduction band, consistently with the available spectroscopic data. The adopted theoretical scheme, suitable to compute a reliable estimate of the wavefunction decay, leads us to predict that such states are associated to an electron localization over a length of about 0.45 nm. By combining the electronic properties of the bare silicon vacancy, carrying deep states in the band gap, with the spatial controllability arising from single Ge ion implantation techniques, the GeVn complex emerges as a suitable ingredient for silicon-based room-temperature single-atom devices.
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Submitted 28 January, 2019; v1 submitted 4 March, 2018;
originally announced March 2018.
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Anisotropic Effects of Oxygen Vacancies on Electrochromic Properties and Conductivity of $γ$-Monoclinic WO$_3$
Authors:
Matteo Gerosa,
Cristiana Di Valentin,
Giovanni Onida,
Carlo Enrico Bottani,
Gianfranco Pacchioni
Abstract:
Tungsten trioxide (WO$_3$) is a paradigmatic electrochromic material, whose peculiar optical properties in the presence of oxygen vacancies or intercalated alkali atoms have been observed and investigated for a long time. In this paper we propose a rationalization of experiments based on first-principles calculations of optical and electrical properties of oxygen deficient (reduced) WO$_3$. Our ap…
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Tungsten trioxide (WO$_3$) is a paradigmatic electrochromic material, whose peculiar optical properties in the presence of oxygen vacancies or intercalated alkali atoms have been observed and investigated for a long time. In this paper we propose a rationalization of experiments based on first-principles calculations of optical and electrical properties of oxygen deficient (reduced) WO$_3$. Our approach is based on a parameter-free dielectric-dependent hybrid density functional methodology, used in combination with the charge transition levels formalism, for studying excitation mechanisms in the presence of defects. Our results indicate that oxygen vacancies lead to a different physics in $γ$-monoclinic WO$_3$, depending on the orientation of the W-O-W chain where the vacancy is created, thus evidencing strong anisotropic effects rooted in the peculiar structural properties of the original nondefective monoclinic cell. Different types of oxygen vacancies can hence be classified on the basis of the calculated ground state properties, electronic structure, and excitation/emission energies, giving a satisfactory explanation to a range of experimental observations made on oxygen deficient WO$_3$.
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Submitted 5 May, 2016;
originally announced May 2016.
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Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: the case of oxygen vacancies in metal oxides
Authors:
Matteo Gerosa,
Carlo Enrico Bottani,
Lucia Caramella,
Giovanni Onida,
Cristiana Di Valentin,
Gianfranco Pacchioni
Abstract:
We investigate the behavior of oxygen vacancies in three different metal-oxide semiconductors (rutile and anatase TiO2, monoclinic WO3, and tetragonal ZrO2) using a recently proposed hybrid density-functional method in which the fraction of exact exchange is material-dependent but obtained ab initio in a self-consistent scheme. In particular, we calculate charge-transition levels relative to the o…
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We investigate the behavior of oxygen vacancies in three different metal-oxide semiconductors (rutile and anatase TiO2, monoclinic WO3, and tetragonal ZrO2) using a recently proposed hybrid density-functional method in which the fraction of exact exchange is material-dependent but obtained ab initio in a self-consistent scheme. In particular, we calculate charge-transition levels relative to the oxygen-vacancy defect and compare computed optical and thermal excitation/emission energies with the available experimental results, shedding light on the underlying excitation mechanisms and related materials properties. We find that this novel approach is able to reproduce not only ground-state properties and band structures of perfect bulk oxide materials, but also provides results consistent with the optical and electrical behavior observed in the corresponding substoichiometric defective systems.
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Submitted 13 September, 2015;
originally announced September 2015.
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Communication: Hole localization in Al-doped quartz SiO2 within ab initio hybrid-functional DFT
Authors:
Matteo Gerosa,
Cristiana Di Valentin,
Carlo Enrico Bottani,
Giovanni Onida,
Gianfranco Pacchioni
Abstract:
We investigate the long-standing problem of the hole localization at the Al impurity in quartz SiO$_2$, using a relatively recent DFT hybrid-functional method in which the exchange fraction is obtained \emph{ab initio}, based on an analogy with the static many-body COHSEX approximation to the electron self-energy. As the amount of the admixed exact exchange in hybrid functionals has been shown to…
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We investigate the long-standing problem of the hole localization at the Al impurity in quartz SiO$_2$, using a relatively recent DFT hybrid-functional method in which the exchange fraction is obtained \emph{ab initio}, based on an analogy with the static many-body COHSEX approximation to the electron self-energy. As the amount of the admixed exact exchange in hybrid functionals has been shown to be determinant for properly capturing the hole localization, this problem constitutes a prototypical benchmark for the accuracy of the method, allowing one to assess to what extent self-interaction effects are avoided. We obtain good results in terms of description of the charge localization and structural distortion around the Al center, improving with respect to the more popular B3LYP hybrid-functional approach. We also discuss the accuracy of computed hyperfine parameters, by comparison with previous calculations based on other self-interaction-free methods, as well as experimental values. We discuss and rationalize the limitations of our approach in computing defect-related excitation energies in low-dielectric-constant insulators.
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Submitted 7 October, 2015; v1 submitted 9 September, 2015;
originally announced September 2015.
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Electronic structure and phase stability of oxide semiconductors: Performance of dielectric-dependent hybrid functional DFT, benchmarked against $GW$ band structure calculations and experiments
Authors:
Matteo Gerosa,
Carlo Enrico Bottani,
Lucia Caramella,
Giovanni Onida,
Cristiana Di Valentin,
Gianfranco Pacchioni
Abstract:
We investigate band gaps, equilibrium structures, and phase stabilities of several bulk polymorphs of wide-gap oxide semiconductors ZnO, TiO2,ZrO2, and WO3. We are particularly concerned with assessing the performance of hybrid functionals built with the fraction of Hartree-Fock exact exchange obtained from the computed electronic dielectric constant of the material. We provide comparison with mor…
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We investigate band gaps, equilibrium structures, and phase stabilities of several bulk polymorphs of wide-gap oxide semiconductors ZnO, TiO2,ZrO2, and WO3. We are particularly concerned with assessing the performance of hybrid functionals built with the fraction of Hartree-Fock exact exchange obtained from the computed electronic dielectric constant of the material. We provide comparison with more standard density-functional theory and GW methods. We finally analyze the chemical reduction of TiO2 into Ti2O3, involving a change in oxide stoichiometry. We show that the dielectric-dependent hybrid functional is generally good at reproducing both ground-state (lattice constants, phase stability sequences, and reaction energies) and excited-state (photoemission gaps) properties within a single, fully ab initio framework.
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Submitted 11 August, 2015; v1 submitted 10 August, 2015;
originally announced August 2015.
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$Ab$-$initio$ electronic structure, optical and magneto-optical properties of $MnGaAs$ digital ferromagnetic heterostructures
Authors:
Patrizia Rosa,
Davide Sangalli,
Giovanni Onida,
Alberto Debernardi
Abstract:
We report on a theoretical study of the electronic, optical and magneto-optical properties of digital ferromagnetic hetero-structures based on $Mn$ $δ$--doped $GaAs$. We consider different structures corresponding to $Mn$ contents within the range 12-50\% and we study how the system changes as a function of the doping concentration. Our first--principles approach includes the spin-orbit interactio…
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We report on a theoretical study of the electronic, optical and magneto-optical properties of digital ferromagnetic hetero-structures based on $Mn$ $δ$--doped $GaAs$. We consider different structures corresponding to $Mn$ contents within the range 12-50\% and we study how the system changes as a function of the doping concentration. Our first--principles approach includes the spin-orbit interaction in a fully relativistic pseudopotential scheme and the local fields effect in the description of the optical absorption. We show that $Mn$ $δ$-doped $GaAs$ shares many properties with the uniformly doped $Ga_{1-x}Mn_xAs$ system, i.e. half-metallicity, similar absorption spectra, and moderate Kerr rotation angles in the visible spectral region.
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Submitted 20 February, 2015;
originally announced February 2015.
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Hydrostatic strain enhancement in laterally confined SiGe nanostripes
Authors:
G. M. Vanacore,
M. Chaigneau,
N. Barrett,
M. Bollani,
F. Boioli,
M. Salvalaglio,
F. Montalenti,
N. Manini,
L. Caramella,
P. Biagioni,
D. Chrastina,
G. Isella,
O. Renault,
M. Zani,
R. Sordan,
G. Onida,
R. Ossikovski,
H. -J. Drouhin,
A. Tagliaferri
Abstract:
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio c…
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Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function mapping, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale.
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Submitted 6 June, 2013;
originally announced June 2013.
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Carbon sp chains in graphene nanoholes
Authors:
Ivano E. Castelli,
Nicola Ferri,
Giovanni Onida,
Nicola Manini
Abstract:
Nowadays sp carbon chains terminated by graphene or graphitic-like carbon are synthesized routinely in several nanotech labs.
We propose an ab-initio study of such carbon-only materials, by computing their structure and stability, as well as their electronic, vibrational and magnetic properties.
We adopt a fair compromise of microscopic realism with a certain level of idealization in the model…
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Nowadays sp carbon chains terminated by graphene or graphitic-like carbon are synthesized routinely in several nanotech labs.
We propose an ab-initio study of such carbon-only materials, by computing their structure and stability, as well as their electronic, vibrational and magnetic properties.
We adopt a fair compromise of microscopic realism with a certain level of idealization in the model configurations, and predict a number of properties susceptible to comparison with experiment.
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Submitted 29 September, 2011;
originally announced September 2011.
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Many-body effects in TiSe2: Can GW describe an Excitonic Insulator?
Authors:
M. Cazzaniga,
H. Cercellier,
M. Holzmann,
C. Monney,
P. Aebi,
G. Onida,
V. Olevano
Abstract:
We present both theoretical ab initio GW and experimental angle-resolved photoemission (ARPES) and scanning tunneling (STS) spectroscopy results on TiSe2. With respect to the density-functional Kohn-Sham metallic picture, the many-body GW self-energy leads to a ~ 0.2 eV band gap insulator consistent with our STS spectra at 5 K. The band shape is strongly renormalized, with the top-of-valence moved…
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We present both theoretical ab initio GW and experimental angle-resolved photoemission (ARPES) and scanning tunneling (STS) spectroscopy results on TiSe2. With respect to the density-functional Kohn-Sham metallic picture, the many-body GW self-energy leads to a ~ 0.2 eV band gap insulator consistent with our STS spectra at 5 K. The band shape is strongly renormalized, with the top-of-valence moved towards a circle of points away from Γ, arising in a mexican hat feature typical of an excitonic insulator. Our calculations are in good agreement with experiment.
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Submitted 12 July, 2011; v1 submitted 10 March, 2011;
originally announced March 2011.
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Vibrational properties of sp carbon atomic wires in cluster-assembled carbon films
Authors:
Giovanni Onida,
Nicola Manini,
Luca Ravagnan,
Eugenio Cinquanta,
Davide Sangalli,
Paolo Milani
Abstract:
Linear chains made by a single row of sp-hybridized carbon are predicted to display fascinating mechano-electronic properties connected with their termination and stabilization inside realistic carbon structures. The present work describes how the computed vibrational properties of cumulenic and polyynic carbon chains allow one to interpret the carbynic features observed in Raman spectra of cluste…
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Linear chains made by a single row of sp-hybridized carbon are predicted to display fascinating mechano-electronic properties connected with their termination and stabilization inside realistic carbon structures. The present work describes how the computed vibrational properties of cumulenic and polyynic carbon chains allow one to interpret the carbynic features observed in Raman spectra of cluster-assembled sp-sp2 films. The overall picture is consistent with the measured decay of the sp components induced by air or oxygen exposure.
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Submitted 18 March, 2010; v1 submitted 4 March, 2010;
originally announced March 2010.
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Comment to "Imaging the atomic orbitals of carbon atomic chains with field-emission electron microscopy"
Authors:
Nicola Manini,
Giovanni Onida
Abstract:
The observation of a stable doublet pattern in the field-emission electron microscopy of a linear atomic chain requires a stable mechanism breaking the axial symmetry, which is not identified correctly by Mikhailovskij et al. [Phys. Rev. B 80, 165404 (2009)]. Using microscopic calculations, we attribute the observed pattern to the symmetry breaking produced by the ligand where the chain is attac…
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The observation of a stable doublet pattern in the field-emission electron microscopy of a linear atomic chain requires a stable mechanism breaking the axial symmetry, which is not identified correctly by Mikhailovskij et al. [Phys. Rev. B 80, 165404 (2009)]. Using microscopic calculations, we attribute the observed pattern to the symmetry breaking produced by the ligand where the chain is attached, plus carbon pi-bonding alternation.
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Submitted 19 February, 2010;
originally announced February 2010.
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Effects of axial torsion on sp carbon atomic nanowires
Authors:
Luca Ravagnan,
Nicola Manini,
Eugenio Cinquanta,
Giovanni Onida,
Davide Sangalli,
Carlo Motta,
Michele Devetta,
Andrea Bordoni,
Paolo Piseri,
Paolo Milani
Abstract:
Ab-initio calculations within Density Functional Theory combined with experimental Raman spectra on cluster-beam deposited pure carbon films provide a consistent picture of sp-carbon chains stabilized by sp^3 or sp^2 terminations, the latter being sensitive to torsional strain. This unexplored effect promises many exciting applications since it allows one to modify the conductive states near the…
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Ab-initio calculations within Density Functional Theory combined with experimental Raman spectra on cluster-beam deposited pure carbon films provide a consistent picture of sp-carbon chains stabilized by sp^3 or sp^2 terminations, the latter being sensitive to torsional strain. This unexplored effect promises many exciting applications since it allows one to modify the conductive states near the Fermi level and to switch on and off the on-chain pi-electron magnetism.
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Submitted 18 May, 2009; v1 submitted 15 February, 2009;
originally announced February 2009.
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Structure and stability of the Si(331)-(12x1) surface reconstruction
Authors:
Corsin Battaglia,
Katalin Gaal-Nagy,
Giovanni Onida,
Philipp Aebi
Abstract:
We recently proposed a new structural model for the Si(331)-(12x1) surface reconstruction containing silicon pentamers as elementary structural building blocks. Using first-principles density-functional theory we here investigate the stability of a variety of adatom configurations and determine the lowest energy configuration. We also present a detailed comparison of the energetics between our m…
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We recently proposed a new structural model for the Si(331)-(12x1) surface reconstruction containing silicon pentamers as elementary structural building blocks. Using first-principles density-functional theory we here investigate the stability of a variety of adatom configurations and determine the lowest energy configuration. We also present a detailed comparison of the energetics between our model for Si(331)-(12x1) and the adatom-tetramer-interstitial model for Si(110)-(16x2), which shares the same structural building blocks.
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Submitted 4 February, 2009;
originally announced February 2009.
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Elementary structural building blocks encountered in silicon surface reconstructions
Authors:
Corsin Battaglia,
Katalin Gaal-Nagy,
Claude Monney,
Clement Didiot,
Eike Fabian Schwier,
Michael Gunnar Garnier,
Giovanni Onida,
Philipp Aebi
Abstract:
Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as…
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Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as well as their impact on the electronic structure of the surface.
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Submitted 29 September, 2008;
originally announced September 2008.
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A new structural model for the Si(331)-(12x1) reconstruction
Authors:
Corsin Battaglia,
Katalin Gaal-Nagy,
Claude Monney,
Clement Didiot,
Eike Fabian Schwier,
Michael Gunnar Garnier,
Giovanni Onida,
Philipp Aebi
Abstract:
A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si(110)-(16x2) surface, establishing the pentamer as a univ…
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A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si(110)-(16x2) surface, establishing the pentamer as a universal building block for complex silicon surface reconstructions.
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Submitted 24 July, 2008;
originally announced July 2008.
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Ab-initio self-energy corrections in systems with metallic screening
Authors:
Marco Cazzaniga,
Nicola Manini,
Luca Guido Molinari,
Giovanni Onida
Abstract:
The calculation of self-energy corrections to the electron bands of a metal requires the evaluation of the intraband contribution to the polarizability in the small-q limit. When neglected, as in standard GW codes for semiconductors and insulators, a spurious gap opens at the Fermi energy. Systematic methods to include intraband contributions to the polarizability exist, but require a computatio…
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The calculation of self-energy corrections to the electron bands of a metal requires the evaluation of the intraband contribution to the polarizability in the small-q limit. When neglected, as in standard GW codes for semiconductors and insulators, a spurious gap opens at the Fermi energy. Systematic methods to include intraband contributions to the polarizability exist, but require a computationally intensive Fermi-surface integration. We propose a numerically cheap and stable method, based on a fit of the power expansion of the polarizability in the small-q region. We test it on the homogeneous electron gas and on real metals such as sodium and aluminum.
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Submitted 20 November, 2007; v1 submitted 11 September, 2007;
originally announced September 2007.
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Ab-initio calculation of the vibrational modes of SiH4, H2SiO, Si10H16, and Si10H14O
Authors:
Katalin Gaal-Nagy,
Giulia Canevari,
Giovanni Onida
Abstract:
We have studied the normal modes of hydrogenated and oxidized silicon nanocrystals, namely SiH4 (silan), H2SiO (silanon), Si10H16 and Si10H14O. The small clusters (SiH4 and H2SiO) have been used for convergence tests and their bondlengths and frequencies have been compared with experimental and theoretical reference data. For the large clusters (Si10H16 and Si10H14O) we have investigated the vib…
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We have studied the normal modes of hydrogenated and oxidized silicon nanocrystals, namely SiH4 (silan), H2SiO (silanon), Si10H16 and Si10H14O. The small clusters (SiH4 and H2SiO) have been used for convergence tests and their bondlengths and frequencies have been compared with experimental and theoretical reference data. For the large clusters (Si10H16 and Si10H14O) we have investigated the vibrational density of states where we have identified the oxygen-related spectral features. The vibrational modes have been also analyzed with respect to the displacement patterns. The calculations have been carried out within the density-functional and density-functional perturbation theory using the local-density approximation.
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Submitted 24 August, 2007;
originally announced August 2007.
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Ab-initio calculations of the optical properties of the Si(113)3x2ADI surface
Authors:
Katalin Gaal-Nagy,
Giovanni Onida
Abstract:
We investigated the stable silicon (113) surface with a 3x2ADI reconstruction by ab-initio methods. The ground state properties have been obtained using the density-functional theory. We present the dispersion of the electronic band structure, where the surface bands have been distinguished from the projected bulk bands by calculating their localization in the slab. The optical spectra, here the…
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We investigated the stable silicon (113) surface with a 3x2ADI reconstruction by ab-initio methods. The ground state properties have been obtained using the density-functional theory. We present the dispersion of the electronic band structure, where the surface bands have been distinguished from the projected bulk bands by calculating their localization in the slab. The optical spectra, here the reflectance anisotropy (RAS), have been obtained within the independent particle random phase approximation. We identified surface features in the spectra tracing them back to the responsible electronic states and, studied their localization in the slab. A comparison with available experimental data for the band structure and the RAS shows a good agreement.
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Submitted 5 November, 2006;
originally announced November 2006.
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Dielectric function of the Si(113)3x2ADI surface from ab-initio methods
Authors:
Katalin Gaal-Nagy,
Giovanni Onida
Abstract:
We have investigated the imaginary part of the dielectric function Im(epsilon) of the (113) 3x2 ADI reconstructed surface of silicon. The calculations have been performed for a periodic slab within the plane-wave pseudopotential approach to the density-functional theory. The three diagonal components of Im(epsilon) have been derived from the momentum matrix elements within the independent partic…
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We have investigated the imaginary part of the dielectric function Im(epsilon) of the (113) 3x2 ADI reconstructed surface of silicon. The calculations have been performed for a periodic slab within the plane-wave pseudopotential approach to the density-functional theory. The three diagonal components of Im(epsilon) have been derived from the momentum matrix elements within the independent particle random phase approximation (IPRPA). In this article, the importance of the k-point convergence is figured out by inspecting k-point resolved spectra.
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Submitted 5 November, 2006;
originally announced November 2006.
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Ab initio study of reflectance anisotropy spectra of a sub-monolayer oxidized Si(100) surface
Authors:
Andrei Incze,
Rodolfo Del Sole,
Giovanni Onida
Abstract:
The effects of oxygen adsorption on the reflectance anisotropy spectrum (RAS) of reconstructed Si(100):O surfaces at sub-monolayer coverage (first stages of oxidation) have been studied by an ab initio DFT-LDA scheme within a plane-wave, norm-conserving pseudopotential approach. Dangling bonds and the main features of the characteristic RAS of the clean Si(100) surface are mostly preserved after…
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The effects of oxygen adsorption on the reflectance anisotropy spectrum (RAS) of reconstructed Si(100):O surfaces at sub-monolayer coverage (first stages of oxidation) have been studied by an ab initio DFT-LDA scheme within a plane-wave, norm-conserving pseudopotential approach. Dangling bonds and the main features of the characteristic RAS of the clean Si(100) surface are mostly preserved after oxidation of 50% of the surface dimers, with some visible changes: a small red shift of the first peak, and the appearance of a distinct spectral structure at about 1.5 eV. The electronic transitions involved in the latter have been analyzed through state-by-state and layer-by-layer decompositions of the RAS. We suggest that new interplay between present theoretical results and reflectance anisotropy spectroscopy experiments could lead to further clarification of structural and kinetic details of the Si(100) oxidation process in the sub-monolayer range.
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Submitted 25 November, 2004; v1 submitted 2 August, 2004;
originally announced August 2004.
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Quasiparticle bandstructure effects on the {\it d} hole lifetimes of copper within the GW approximation
Authors:
Andrea Marini,
Rodolfo Del Sole,
Angel Rubio,
Giovanni Onida
Abstract:
We investigate the lifetime of {\it d} holes in copper within a {\it first--principle} $GW$ approximation. At the $G_0W_0$ level the lifetime of the topmost {\it d} bands are in agreement with the experimental results and are four times smaller than those obtained in the ``on--shell'' calculations commonly used in literature. The theoretical lifetimes and bandstructure, however, worsen when furt…
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We investigate the lifetime of {\it d} holes in copper within a {\it first--principle} $GW$ approximation. At the $G_0W_0$ level the lifetime of the topmost {\it d} bands are in agreement with the experimental results and are four times smaller than those obtained in the ``on--shell'' calculations commonly used in literature. The theoretical lifetimes and bandstructure, however, worsen when further iterative steps of self-consistency are included in the calculation, pointing to a delicate interplay between self--consistency and the inclusion of vertex corrections. We show that the $G_0W_0$ success in the lifetimes calculation is due to the opening of new ``intraband'' decay channels that disappear at self--consistency.
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Submitted 29 August, 2002;
originally announced August 2002.
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First--principles calculation of the plasmon resonance and of the reflectance spectrum of Silver in the GW approximation
Authors:
Andrea Marini,
Rodolfo Del Sole,
Giovanni Onida
Abstract:
We show that the position and width of the plasmon resonance in Silver are correctly predicted by ab--initio calculations including self--energy effects within the GW approximation. Unlike in simple metals and semiconductors, quasiparticle corrections play a key role and are essential to obtain Electron Energy Loss in quantitative agreement with the experimental data. The sharp reflectance minim…
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We show that the position and width of the plasmon resonance in Silver are correctly predicted by ab--initio calculations including self--energy effects within the GW approximation. Unlike in simple metals and semiconductors, quasiparticle corrections play a key role and are essential to obtain Electron Energy Loss in quantitative agreement with the experimental data. The sharp reflectance minimum at 3.92 eV, that cannot be reproduced within DFT--LDA, is also well described within GW.The present results solve two unsettled drawbacks of linear response calculations for Silver.
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Submitted 17 June, 2002;
originally announced June 2002.
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Quasiparticle Electronic structure of Copper in the GW approximation
Authors:
Andrea Marini,
Giovanni Onida,
Rodolfo Del Sole
Abstract:
We show that the results of photoemission and inverse photoemission experiments on bulk copper can be quantitatively described within band-structure theory, with no evidence of effects beyond the single-quasiparticle approximation. The well known discrepancies between the experimental bandstructure and the Kohn-Sham eigenvalues of Density Functional Theory are almost completely corrected by self…
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We show that the results of photoemission and inverse photoemission experiments on bulk copper can be quantitatively described within band-structure theory, with no evidence of effects beyond the single-quasiparticle approximation. The well known discrepancies between the experimental bandstructure and the Kohn-Sham eigenvalues of Density Functional Theory are almost completely corrected by self-energy effects. Exchange-correlation contributions to the self-energy arising from 3s and 3p core levels are shown to be crucial.
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Submitted 7 November, 2001; v1 submitted 24 October, 2001;
originally announced October 2001.
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Excitonic effects in solids described by time-dependent density functional theory
Authors:
Lucia Reining,
Valerio Olevano,
Angel Rubio,
Giovanni Onida
Abstract:
Starting from the many-body Bethe-Salpeter equation we derive an exchange-correlation kernel $f_{xc}$ that reproduces excitonic effects in bulk materials within time-dependent density functional theory. The resulting $f_{xc}$ accounts for both self-energy corrections and the electron-hole interaction. It is {\em static}, {\em non-local} and has a long-range Coulomb tail. Taking the example of bu…
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Starting from the many-body Bethe-Salpeter equation we derive an exchange-correlation kernel $f_{xc}$ that reproduces excitonic effects in bulk materials within time-dependent density functional theory. The resulting $f_{xc}$ accounts for both self-energy corrections and the electron-hole interaction. It is {\em static}, {\em non-local} and has a long-range Coulomb tail. Taking the example of bulk silicon, we show that the $- α/ q^2$ divergency is crucial and can, in the case of continuum excitons, even be sufficient for reproducing the excitonic effects and yielding excellent agreement between the calculated and the experimental absorption spectrum.
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Submitted 15 October, 2001; v1 submitted 24 September, 2001;
originally announced September 2001.
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Plane-waves DFT-LDA calculation of the electronic structure and absorption spectrum of Copper
Authors:
Andrea Marini,
Giovanni Onida,
Rodolfo Del Sole
Abstract:
We present an accurate, first-principles study of the electronic structure and absorption spectrum of bulk copper within Density Functional Theory in the Local Density Approximation (DFT-LDA), including the study of intraband transitions. We construct norm-conserving pseudopotentials (PPs) including the 3d shell (and optionally the underlying 3s and 3p shells) in the valence, and requiring a rel…
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We present an accurate, first-principles study of the electronic structure and absorption spectrum of bulk copper within Density Functional Theory in the Local Density Approximation (DFT-LDA), including the study of intraband transitions. We construct norm-conserving pseudopotentials (PPs) including the 3d shell (and optionally the underlying 3s and 3p shells) in the valence, and requiring a relatively small plane-waves basis (60 and 140 Rydbergs cutoff, respectively). As a consequence, these PPs are strongly non-local, yielding to macroscopically wrong results in the absorption spectrum when momentum matrix elements are computed naively. Our results are compared with experimental photoemission, absorption and electron energy loss data, and suggest non trivial self-energy effects in the quasiparticle spectrum of Cu.
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Submitted 31 August, 2001;
originally announced August 2001.
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Optical Properties of BN in the cubic and in the layered hexagonal phases
Authors:
Giancarlo Cappellini,
Guido Satta,
Maurizia Palummo,
Giovanni Onida
Abstract:
Linear optical functions of cubic and hexagonal BN have been studied within first principles DFT-LDA theory. Calculated energy-loss functions compare well with experiments and previous theoretical results both for h-BN and for c-BN. Discrepancies arise between theoretical results and experiments in the imaginary part of the dielectric function for c-BN. Possible explanation to this mismatch are…
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Linear optical functions of cubic and hexagonal BN have been studied within first principles DFT-LDA theory. Calculated energy-loss functions compare well with experiments and previous theoretical results both for h-BN and for c-BN. Discrepancies arise between theoretical results and experiments in the imaginary part of the dielectric function for c-BN. Possible explanation to this mismatch are proposed and evaluated; lattice constant variations, h-BN contamination in c-BN samples and self-energy effects.
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Submitted 9 March, 2001;
originally announced March 2001.
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Room Temperature Organic Superconductor?
Authors:
N. Breda,
R. A. Broglia,
G. Colo`,
G. Onida,
D. Provasi,
E. Vigezzi
Abstract:
The electron--phonon coupling in fullerene C28 has been calculated from first principles. The value of the associated coupling constant lambda/N(0) is found to be a factor three larger than that associated with C60. Assuming similar values of the density of levels at the Fermi surface N(0) and of the Coulomb pseudopotential for C28-based solids as those associated with alkali-doped fullerides A3…
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The electron--phonon coupling in fullerene C28 has been calculated from first principles. The value of the associated coupling constant lambda/N(0) is found to be a factor three larger than that associated with C60. Assuming similar values of the density of levels at the Fermi surface N(0) and of the Coulomb pseudopotential for C28-based solids as those associated with alkali-doped fullerides A3C60, one obtains Tc(C28) \approx 8 Tc(C60).
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Submitted 11 January, 2000;
originally announced January 2000.
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Electron-phonon interaction in C70
Authors:
D. Provasi,
N. Breda,
R. A. Broglia,
G. Colo`,
H. E. Roman,
G. Onida
Abstract:
The matrix elements of the deformation potential of C$_{70}$ are calculated by means of a simple, yet accurate solution of the electron-phonon coupling problem in fullerenes, based on a parametrization of the ground state electronic density of the system in terms of $sp^{2+x}$ hybridized orbitals. The value of the calculated dimensionless total electron-phonon coupling constant is $λ\approx0.1$,…
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The matrix elements of the deformation potential of C$_{70}$ are calculated by means of a simple, yet accurate solution of the electron-phonon coupling problem in fullerenes, based on a parametrization of the ground state electronic density of the system in terms of $sp^{2+x}$ hybridized orbitals. The value of the calculated dimensionless total electron-phonon coupling constant is $λ\approx0.1$, an order of magnitude smaller than in C$_{60}$, consistent with the lack of a superconducting phase transition in C$_{70}$A$_3$ fullerite, and in overall agreement with measurements of the broadening of Raman peaks in C$_{70}$K$_4$. We also calculate the photoemission cross section of C$_{70}^-$, which is found to display less structure than that associated with C$_{60}^-$, in overall agreement with the experimental findings.
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Submitted 5 January, 2000;
originally announced January 2000.
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Surface versus crystal-termination effects in the optical properties of surfaces
Authors:
Rodolfo Del Sole,
Giovanni Onida
Abstract:
We prove, by realistic microscopic calculations within the sp^3s^* Tight Binding method for GaAs (110) and (100), that the surface optical properties are not influenced by long-range crystal termination effects, and hence that they can be consistently studied considering slabs of limited thickness (20 - 30 Å). The origin of derivative-like and bulk-like lineshapes in Reflection Anisotropy Spectr…
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We prove, by realistic microscopic calculations within the sp^3s^* Tight Binding method for GaAs (110) and (100), that the surface optical properties are not influenced by long-range crystal termination effects, and hence that they can be consistently studied considering slabs of limited thickness (20 - 30 Å). The origin of derivative-like and bulk-like lineshapes in Reflection Anisotropy Spectra is also discussed, analyzing the effects arising from possible surface-induced reduction, broadening, and shifting of the bulk spectrum near the surface.
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Submitted 23 June, 1999;
originally announced June 1999.
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Study of a Nonlocal Density scheme for electronic--structure calculations
Authors:
Maurizia Palummo,
Giovanni Onida,
Rodolfo Del Sole
Abstract:
An exchange-correlation energy functional beyond the local density approximation, based on the exchange-correlation kernel of the homogeneous electron gas and originally introduced by Kohn and Sham, is considered for electronic structure calculations of semiconductors and atoms. Calculations are carried out for diamond, silicon, silicon carbide and gallium arsenide. The lattice constants and gap…
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An exchange-correlation energy functional beyond the local density approximation, based on the exchange-correlation kernel of the homogeneous electron gas and originally introduced by Kohn and Sham, is considered for electronic structure calculations of semiconductors and atoms. Calculations are carried out for diamond, silicon, silicon carbide and gallium arsenide. The lattice constants and gaps show a small improvement with respect to the LDA results.
However, the corresponding corrections to the total energy of the isolated atoms are not large enough to yield a substantial improvement for the cohesive energy of solids, which remains hence overestimated as in the LDA.
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Submitted 7 January, 1999;
originally announced January 1999.
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Ab initio optical properties of Si(100)
Authors:
Maurizia Palummo,
Giovanni Onida,
Rodolfo Del Sole,
Bernardo Mendoza
Abstract:
We compute the linear optical properties of different reconstructions of the clean and hydrogenated Si(100) surface within DFT-LDA, using norm-conserving pseudopotentials. The equilibrium atomic geometries of the surfaces, determined from self-consistent total energy calculations within the Car-Parrinello scheme, strongly influence Reflectance Anisotropy Spectra (RAS), showing differences betwee…
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We compute the linear optical properties of different reconstructions of the clean and hydrogenated Si(100) surface within DFT-LDA, using norm-conserving pseudopotentials. The equilibrium atomic geometries of the surfaces, determined from self-consistent total energy calculations within the Car-Parrinello scheme, strongly influence Reflectance Anisotropy Spectra (RAS), showing differences between the p(2x2) and c(4x2)reconstructions. The Differential Reflectivity spectrum for the c(4x2) reconstruction shows a positive peak at energies < 1 eV, in agreement with experimental results.
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Submitted 23 June, 1999; v1 submitted 14 December, 1998;
originally announced December 1998.
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Elimination of unoccupied state summations in ab-initio self-energy calculations for large supercells
Authors:
Lucia Reining,
Giovanni Onida,
R. W. Godby
Abstract:
We present a new method for the computation of self-energy corrections in large supercells. It eliminates the explicit summation over unoccupied states, and uses an iterative scheme based on an expansion of the Green's function around a set of reference energies. This improves the scaling of the computational time from the fourth to the third power of the number of atoms for both the inverse die…
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We present a new method for the computation of self-energy corrections in large supercells. It eliminates the explicit summation over unoccupied states, and uses an iterative scheme based on an expansion of the Green's function around a set of reference energies. This improves the scaling of the computational time from the fourth to the third power of the number of atoms for both the inverse dielectric matrix and the self-energy, yielding improved efficiency for 8 or more silicon atoms per unit cell.
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Submitted 18 March, 1998;
originally announced March 1998.
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Analytical expressions for the local-field factor G(q) and the exchange-correlation kernel K_{xc}(r) of the homogeneous electron gas
Authors:
Massimiliano Corradini,
Rodolfo Del Sole,
Giovanni Onida,
Maurizia Palummo
Abstract:
We present an analytical expression for the local field factor G(q) of the homogeneous electron gas which reproduces recently published Quantum Monte--Carlo data by S. Moroni, D.M. Ceperley, and G. Senatore [Phys. Rev. Lett. 75, 689 (1995)], reflects the theoretically known asymptotic behaviours for both small and large q limits, and allows to express the exchange-correlation kernel K_{xc} analy…
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We present an analytical expression for the local field factor G(q) of the homogeneous electron gas which reproduces recently published Quantum Monte--Carlo data by S. Moroni, D.M. Ceperley, and G. Senatore [Phys. Rev. Lett. 75, 689 (1995)], reflects the theoretically known asymptotic behaviours for both small and large q limits, and allows to express the exchange-correlation kernel K_{xc} analytically in both the direct and reciprocal spaces. The last property is particularly useful in numerical applications to real solids
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Submitted 18 March, 1998;
originally announced March 1998.
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Ab initio calculation of excitonic effects in the optical spectra of semiconductors
Authors:
Stefan Albrecht,
Lucia Reining,
Rodolfo Del Sole,
Giovanni Onida
Abstract:
An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle bandstructure calculation and is based on the relevant Bethe--Salpeter equation.
An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental s…
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An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle bandstructure calculation and is based on the relevant Bethe--Salpeter equation.
An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and lineshape.
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Submitted 16 March, 1998;
originally announced March 1998.
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Electron-Phonon Coupling in Charged Buckminsterfullerene
Authors:
N. Breda,
R. A. Broglia,
G. Colo`,
H. E. Roman,
F. Alasia,
G. Onida,
V. Ponomarev,
E. Vigezzi
Abstract:
A simple, yet accurate solution of the electron-phonon coupling problem in C_{60} is presented. The basic idea behind it is to be found in the parametrization of the ground state electronic density of the system calculated making use of ab-initio methods, in term of sp$^{2+x}$ hybridized orbitals. This parametrization allows for an economic determination of the deformation potential associated w…
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A simple, yet accurate solution of the electron-phonon coupling problem in C_{60} is presented. The basic idea behind it is to be found in the parametrization of the ground state electronic density of the system calculated making use of ab-initio methods, in term of sp$^{2+x}$ hybridized orbitals. This parametrization allows for an economic determination of the deformation potential associated with the fullerene's normal modes. The resulting electron-phonon coupling constants are used to calculate Jahn-Teller effects in C_{60}^-, and multiple satellite peaks in the corresponding photoemission reaction. Theory provides an accurate account of the experimental findings.
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Submitted 20 January, 1998;
originally announced January 1998.