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All-Electrical Layer-Spintronics in Altermagnetic Bilayer
Authors:
Rui Peng,
Jin Yang,
Lin Hu,
Wee-Liat Ong,
Pin Ho,
Chit Siong Lau,
Junwei Liu,
Yee Sin Ang
Abstract:
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other laye…
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Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin.
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Submitted 18 September, 2024; v1 submitted 22 August, 2024;
originally announced August 2024.
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Frequency-resolved Raman Thermometry Analysis via a Multi-layer Heat Transfer Model for Bulk and Low-dimensional Materials
Authors:
Taocheng Yu,
Yilu Fu,
Chenguang Fu,
Tiejun Zhu,
Wee-Liat Ong
Abstract:
Raman thermometry is advantageous for measuring the thermal transport of low-dimensional materials due to its non-contact nature. Transient Raman methods have improved the accuracy of steady-state Raman thermometry by removing the need for accurate temperature calibration and laser absorption evaluation. However, current methods often resort to finite element analysis (FEA) to decipher the measure…
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Raman thermometry is advantageous for measuring the thermal transport of low-dimensional materials due to its non-contact nature. Transient Raman methods have improved the accuracy of steady-state Raman thermometry by removing the need for accurate temperature calibration and laser absorption evaluation. However, current methods often resort to finite element analysis (FEA) to decipher the measured signals. This step is time-consuming and impedes its ubiquitous adaptation. In this work, we replace the FEA by fitting the transient-state Raman signal to a three-dimensional (3D) analytical heat transfer model for measuring the thermal conductivity of two bulk layered materials [i.e., molybdenum disulfide (MoS2) and bismuth selenide (Bi2Se3) crystals] and the interfacial thermal conductance (h) of CVD-grown MoS2 and molybdenum di-selenide (MoSe2) on quartz (SiO2). Our measured results agree reasonably well with literature and theoretical calculations. We also performed a quantitative sensitivity analysis to give insights on how to improve the measurement sensitivity. Our work provides an efficient way to process the data of transient-based Raman thermometry for high throughput measurements.
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Submitted 30 June, 2024;
originally announced July 2024.
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MA$_2$Z$_4$ Family Heteorstructures: Promises and Prospects
Authors:
Che Chen Tho,
San-Dong Guo,
Shi-Jun Liang,
Wee-Liat Ong,
Chit Siong Lau,
Liemao Cao,
Guangzhao Wang,
Yee Sin Ang
Abstract:
Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition metal nitride (Mo-N) inner sub-monolayer sandwiched by two silicon nitride (Si-N) outer sub-monolayers - have motivated the computational discovery of an expansive family of synthetic MA2Z4 monolayers with no bulk (3D) mater…
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Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition metal nitride (Mo-N) inner sub-monolayer sandwiched by two silicon nitride (Si-N) outer sub-monolayers - have motivated the computational discovery of an expansive family of synthetic MA2Z4 monolayers with no bulk (3D) material counterpart (where M = transition metals or alkaline earth metals; A = Si, Ge; and N = N, P, As). MA2Z4 monolayers exhibit interesting electronic, magnetic, optical, spintronic, valleytronic and topological properties, making them a compelling material platform for next-generation device technologies. Furthermore, heterostructure engineering enormously expands the opportunities of MA2Z4. In this review, we summarize the recent rapid progress in the computational design of MA2Z4-based heterostructures based on first-principle density functional theory (DFT) simulations - a central \emph{work horse} widely used to understand the physics, chemistry and general design rules for specific targeted functions. We systematically classify the MA2Z4-based heterostructures based on their contact types, and review their physical properties, with a focus on their performances in electronics, optoelectronics and energy conversion applications. We review the performance and promises of MA2Z4-based heterostructures for device applications that include electrical contacts, transistors, spintronic devices, photodetectors, solar cells, and photocatalytic water splitting. This review unveils the vast device application potential of MA2Z4-based heterostructures, and paves a roadmap for the future experimental and theoretical development of MA2Z4-based functional heterostructures and devices.
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Submitted 24 October, 2023; v1 submitted 5 April, 2023;
originally announced April 2023.
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2D Janus Niobium Oxydihalide NbO$XY$: Multifunctional High-Mobility Piezoelectric Semiconductor for Electronics, Photonics and Sustainable Energy Applications
Authors:
Tong Su,
Ching Hua Lee,
San-Dong Guo,
Guangzhao Wang,
Wee-Liat Ong,
Weiwei Zhao,
Shengyuan A. Yang,
Yee Sin Ang
Abstract:
Two-dimensional (2D) niobium oxydihalide NbOI$_2$ has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus niobium oxydihalide, NbO$XY$ (X, Y = Cl, Br, I and X$\neq$Y), is a multifunctional anisotropic semiconductor family with exceptional piezoelectric, electronic, photocatalytic and optical properties. NbO$XY$ are stable and m…
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Two-dimensional (2D) niobium oxydihalide NbOI$_2$ has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus niobium oxydihalide, NbO$XY$ (X, Y = Cl, Br, I and X$\neq$Y), is a multifunctional anisotropic semiconductor family with exceptional piezoelectric, electronic, photocatalytic and optical properties. NbO$XY$ are stable and mechancially flexible monolayers with band gap around the visible light regime of $\sim 1.9$ eV. The anisotropic carrier mobility of NbO$XY$ lies in the range of $10^3 \sim 10^4$ cm$^2$V$^{-1}$s$^{-1}$, which represents some of the highest among 2D semiconductors of bandgap $\gtrsim 2$ eV. Inversion symmetry breaking in Janus NbO$XY$ generates sizable out-of-plane $d_{31}$ piezoelectric response while still retaining a strong in-plane piezoelectricity. Remarkably, NbO$XY$ exhibits an additional out-of-plane piezoelectric response, $d_{32}$ as large as 0.55 pm/V. G$_0$W$_0$-BSE calculation further reveals the strong linear optical dichroism of NbO$XY$ in the visible-to-ultraviolet regime. The optical absorption peaks with $14\sim18$ \% in the deep UV regime ($5\sim6$ eV), outperforming the vast majority of other 2D materials. The high carrier mobility, strong optical absorption, sizable built-in electric field and band alignment compatible with overall water splitting further suggest the strengths of NbO$XY$ in energy conversion application. We further propose a directional stress sensing device to demonstrate how the out-of-plane piezoelectricity can be harnessed for functional device applications. Our findings unveil NbO$XY$ as an exceptional multifunctional 2D semiconductor for flexible electronics, optoelectronics, UV photonics, piezoelectric and sustainable energy applications.
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Submitted 3 November, 2022; v1 submitted 1 November, 2022;
originally announced November 2022.
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Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Authors:
Che Chen Tho,
Chenjiang Yu,
Qin Tang,
Qianqian Wang,
Tong Su,
Zhuoer Feng,
Qingyun Wu,
C. V. Nguyen,
Wee-Liat Ong,
Shi-Jun Liang,
San-Dong Guo,
Liemao Cao,
Shengli Zhang,
Shengyuan A. Yang,
Lay Kee Ang,
Guangzhao Wang,
Yee Sin Ang
Abstract:
Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain…
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Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology.
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Submitted 4 July, 2022; v1 submitted 23 June, 2022;
originally announced June 2022.
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Compositional dependence of direct transition energies in Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys lattice-matched to Ge/GaAs
Authors:
Phoebe M. Pearce,
Sheau Wei Ong,
Andrew D. Johnson,
Eng Soon Tok,
Nicholas J. Ekins-Daukes
Abstract:
Si$_x$Ge$_{1-x-y}$Sn$_y$ ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys with six different compositions up to 10 % Si and 3 % Sn, lattice-matched to Ge or GaAs substrates. The direct transitions occurring between 0.9 and 5.0 eV we…
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Si$_x$Ge$_{1-x-y}$Sn$_y$ ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys with six different compositions up to 10 % Si and 3 % Sn, lattice-matched to Ge or GaAs substrates. The direct transitions occurring between 0.9 and 5.0 eV were investigated using spectroscopic ellipsometry (SE), and the resulting data was used to obtain the dielectric functions of the Si$_x$Ge$_{1-x-y}$Sn$_y$n layer by fitting a multi-layer model. Values for the $E_0$, $E_1$, $Δ_1$, $E_0'$ and $E_2$ transition energies were then found by differentiating these dielectric functions to extract the locations of critical points. Structurally, the composition of the samples was measured using energy-dispersive X-ray measurements (EDX). The lattice constants predicted from these compositions are in good agreement with reciprocal space maps obtained through X-ray diffraction (XRD). The results confirm that a 1 eV direct absorption edge can be achieved using relatively low Si and Sn fractions ($<$ 10 % and $<$ 3 % respectively), while the higher-energy critical points show smaller shifts relative to Ge and match results previously observed or predicted in the literature.
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Submitted 10 March, 2022;
originally announced March 2022.
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Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers
Authors:
Qianqian Wang,
Liemao Cao,
Shi-Jun Liang,
Weikang Wu,
Guangzhao Wang,
Ching Hua Lee,
Wee Liat Ong,
Hui Ying Yang,
Lay Kee Ang,
Shengyuan A. Yang,
Yee Sin Ang
Abstract:
Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N…
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Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices.
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Submitted 23 December, 2020; v1 submitted 14 December, 2020;
originally announced December 2020.
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Spin-Imbalanced Quasi-Two-Dimensional Fermi Gases
Authors:
W. Ong,
C. -Y. Cheng,
I. Arakelyan,
J. E. Thomas
Abstract:
We measure the density profiles for a Fermi gas of $^6$Li containing $N_1$ spin-up atoms and $N_2$ spin-down atoms, confined in a quasi-two-dimensional geometry. The spatial profiles are measured as a function of spin-imbalance $N_2/N_1$ and interaction strength, which is controlled by means of a collisional (Feshbach) resonance. The measured cloud radii and central densities are in disagreement w…
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We measure the density profiles for a Fermi gas of $^6$Li containing $N_1$ spin-up atoms and $N_2$ spin-down atoms, confined in a quasi-two-dimensional geometry. The spatial profiles are measured as a function of spin-imbalance $N_2/N_1$ and interaction strength, which is controlled by means of a collisional (Feshbach) resonance. The measured cloud radii and central densities are in disagreement with mean-field Bardeen-Cooper-Schrieffer theory for a true two-dimensional system. We find that the data for normal-fluid mixtures are reasonably well fit by a simple two-dimensional polaron model of the free energy. Not predicted by the model is a phase transition to a spin-balanced central core, which is observed above a critical value of $N_2/N_1$. Our observations provide important benchmarks for predictions of the phase structure of quasi-two-dimensional Fermi gases.
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Submitted 23 December, 2014; v1 submitted 20 December, 2014;
originally announced December 2014.
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Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition
Authors:
Zachary R. Robinson,
Eng Wen Ong,
Tyler R. Mowll,
Parul Tyagi,
D. Kurt Gaskill,
Heike Geisler,
Carl A. Ventrice Jr
Abstract:
Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we have studied the growth of graphene by catalytic decomposition of ethylene in an ultra-high vacuum chamber on both a clean Cu(100) surface and a Cu(100) surface…
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Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we have studied the growth of graphene by catalytic decomposition of ethylene in an ultra-high vacuum chamber on both a clean Cu(100) surface and a Cu(100) surface pre-dosed with a layer of chemisorbed oxygen. The crystal structure of the graphene films was characterized with \emph{in-situ} low energy electron diffraction. By heating the clean Cu(100) substrate from room temperature to the growth temperature in ethylene, epitaxial graphene films were formed. The crystal quality was found to depend strongly on the growth temperature. At 900 $^\circ$C, well-ordered two-domain graphene films were formed. Pre-dosing the Cu(100) surface with a chemisorbed layer of oxygen before graphene growth was found to adversely affect the crystal quality of the graphene overlayer by inducing a much higher degree of rotational disorder of the graphene grains with respect to the Cu(100) substrate. The growth morphology of the graphene islands during the initial stages of nucleation was monitored with \emph{ex-situ} scanning electron microscopy. The nucleation rate of the graphene islands was observed to drop by an order of magnitude by pre-dosing the Cu(100) surface with a chemisorbed oxygen layer before growth. This reduction in nucleation rate results in the formation of much larger graphene islands. Therefore, the presence of oxygen during graphene growth affects both the relative orientation and average size of grains within the films grown on Cu(100) substrates.
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Submitted 14 March, 2014;
originally announced March 2014.
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Polarons in the radio-frequency spectrum of a quasi-two-dimensional Fermi gas
Authors:
Y. Zhang,
W. Ong,
I. Arakelyan,
J. E. Thomas
Abstract:
We measure radio-frequency spectra for a two-component mixture of a $^6$Li atomic Fermi gas in the quasi-two-dimensional regime. Near the Feshbach resonance, where the transverse Fermi energy is large compared to the confinement-induced dimer binding energies for the initial and final states, we find that the observed resonances do not correspond to transitions between confinement-induced dimers.…
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We measure radio-frequency spectra for a two-component mixture of a $^6$Li atomic Fermi gas in the quasi-two-dimensional regime. Near the Feshbach resonance, where the transverse Fermi energy is large compared to the confinement-induced dimer binding energies for the initial and final states, we find that the observed resonances do not correspond to transitions between confinement-induced dimers. The spectrum appears to be well-described by transitions between noninteracting polaron states in two dimensions.
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Submitted 17 January, 2012;
originally announced January 2012.
