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Effect of Coulomb Interaction on Seebeck Coefficient of Organic Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$
Authors:
Daigo Ohki,
Yukiko Omori,
Akito Kobayashi
Abstract:
Motivated by the results of recent thermoelectric effect studies, we show the effects of Coulomb interactions on the Seebeck coefficient based on an extended Hubbard model that describes the electronic states of a slightly doped organic Dirac electron system, $α$-(BEDT-TTF)$_2$I$_3$. Our results indicate that the Hartree terms of the Coulomb interactions enhance the electron-hole asymmetry of the…
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Motivated by the results of recent thermoelectric effect studies, we show the effects of Coulomb interactions on the Seebeck coefficient based on an extended Hubbard model that describes the electronic states of a slightly doped organic Dirac electron system, $α$-(BEDT-TTF)$_2$I$_3$. Our results indicate that the Hartree terms of the Coulomb interactions enhance the electron-hole asymmetry of the energy band structure and change the energy dependence of the relaxation time from impurity scattering, which reflects the shape of the density of states. Thus, the Seebeck coefficient exhibits a non-monotonic $T$ dependence which qualitatively agrees with the experimental results. Furthermore, we also show that the signs of the Seebeck coefficient and the Hall coefficient calculated by linear response theory do not necessarily correspond to the sign of the chemical potential using a modified Weyl model with electron-hole asymmetry. These results point out that changing the electron-hole asymmetry by strong Coulomb interaction has the potential to controllable the sign and value of the Seebeck coefficient in the Dirac electron systems.
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Submitted 10 June, 2020; v1 submitted 14 February, 2020;
originally announced February 2020.
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Domain Wall Conductivity with strong Coulomb interaction of two-dimensional massive Dirac Electrons in the Organic Conductor $α$-(BEDT-TTF)$_2$I$_3$
Authors:
Daigo Ohki,
Yukiko Omori,
Akito Kobayashi
Abstract:
Motivated by the results of recent transport and optical conductivity studies, we propose a semi-infinite two-dimensional lattice model for interacting massive Dirac electrons in the pressurized organic conductor $α$-(BEDT-TTF)$_2$I$_3$, and address the problem of domain wall conductivity in a charge-ordered insulating phase under realistic experimental conditions. Using the extended Hubbard model…
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Motivated by the results of recent transport and optical conductivity studies, we propose a semi-infinite two-dimensional lattice model for interacting massive Dirac electrons in the pressurized organic conductor $α$-(BEDT-TTF)$_2$I$_3$, and address the problem of domain wall conductivity in a charge-ordered insulating phase under realistic experimental conditions. Using the extended Hubbard model at a mean field level, we present results of extensive numerical studies around the critical region of the model, reporting on the resistivity and optical conductivity calculated by means of the Nakano-Kubo formula. We find that the activation gap extracted from the resistivity data can be much smaller than the optical gap in the critical region, which is induced by metallic conduction along an one-dimensional domain wall emerging at the border of two charge-ordered ferroelectric regions with opposite polarizations. The data are consistent with the observed transport gap in real $α$-(BEDT-TTF)$_2$I$_3$ samples that is reduced remarkably faster than the optical gap upon suppressing charge order with pressure. Our optical conductivity also reveals an additional shoulder-like structure at low energy inside the gap, which is argued to be directly relevant to the metallic bound states residing on the domain wall.
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Submitted 3 September, 2019; v1 submitted 8 April, 2019;
originally announced April 2019.
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Spin diffusion length of Permalloy using spin absorption in lateral spin valves
Authors:
Edurne Sagasta,
Yasutomo Omori,
Miren Isasa,
YoshiChika Otani,
Luis E. Hueso,
Fèlix Casanova
Abstract:
We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed, evidencing that Elliott-Yafet is the dominant spin relaxation mechanism in Permalloy. Completing the data set with additional data found in literature…
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We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed, evidencing that Elliott-Yafet is the dominant spin relaxation mechanism in Permalloy. Completing the data set with additional data found in literature, we obtain $λ_{Py}= (0.91\pm 0.04) (fΩm^2)/ρ_{Py}$.
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Submitted 3 April, 2019;
originally announced April 2019.
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Interfacial mechanism in the anomalous Hall effect of Co/Bi$_2$O$_3$ bilayers
Authors:
Edurne Sagasta,
Juan Borge,
Luis Esteban,
Yasutomo Omori,
Martin Gradhand,
YoshiChika Otani,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ capping layer is added to the ferromagnet. This strong variation is attri…
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Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi$_2$O$_3$ bilayers that originates from the Co/Bi$_2$O$_3$ interface and contributes to the skew scattering.
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Submitted 3 April, 2019;
originally announced April 2019.
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Materials development by interpretable machine learning
Authors:
Yuma Iwasaki,
Ryoto Sawada,
Valentin Stanev,
Masahiko Ishida,
Akihiro Kirihara,
Yasutomo Omori,
Hiroko Someya,
Ichiro Takeuchi,
Eiji Saitoh,
Yorozu Shinichi
Abstract:
Machine learning technologies are expected to be great tools for scientific discoveries. In particular, materials development (which has brought a lot of innovation by finding new and better functional materials) is one of the most attractive scientific fields. To apply machine learning to actual materials development, collaboration between scientists and machine learning is becoming inevitable. H…
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Machine learning technologies are expected to be great tools for scientific discoveries. In particular, materials development (which has brought a lot of innovation by finding new and better functional materials) is one of the most attractive scientific fields. To apply machine learning to actual materials development, collaboration between scientists and machine learning is becoming inevitable. However, such collaboration has been restricted so far due to black box machine learning, in which it is difficult for scientists to interpret the data-driven model from the viewpoint of material science and physics. Here, we show a material development success story that was achieved by good collaboration between scientists and one type of interpretable (explainable) machine learning called factorized asymptotic Bayesian inference hierarchical mixture of experts (FAB/HMEs). Based on material science and physics, we interpreted the data-driven model constructed by the FAB/HMEs, so that we discovered surprising correlation and knowledge about thermoelectric material. Guided by this, we carried out actual material synthesis that led to identification of a novel spin-driven thermoelectric material with the largest thermopower to date.
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Submitted 6 March, 2019;
originally announced March 2019.
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Relation between spin Hall effect and anomalous Hall effect in 3$d$ ferromagnetic metals
Authors:
Yasutomo Omori,
Edurne Sagasta,
Yasuhiro Niimi,
Martin Gradhand,
Luis E. Hueso,
Felix Casanova,
YoshiChika Otani
Abstract:
We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple rela…
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We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple relation breaks down for Py at higher temperatures as well as for the other ferromagnetic metals at any temperature. We find that, in general, the relation between the SHE and AHE is more complex, with the temperature dependence of the SHE being much stronger than that of AHE.
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Submitted 4 January, 2019; v1 submitted 13 November, 2018;
originally announced November 2018.
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Unveiling the mechanisms of the spin Hall effect in Ta
Authors:
Edurne Sagasta,
Yasutomo Omori,
Saül Vélez,
Roger Llopis,
Christopher Tollan,
Andrey Chuvilin,
Luis E. Hueso,
Martin Gradhand,
YoshiChika Otani,
Fèlix Casanova
Abstract:
Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of the spin Hall effect, different mechanisms contribute to the phenomenon and determining the leading contribution is peremptory for achieving the largest conver…
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Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of the spin Hall effect, different mechanisms contribute to the phenomenon and determining the leading contribution is peremptory for achieving the largest conversion efficiencies. Here, we experimentally demonstrate the dominance of the intrinsic mechanism of the spin Hall effect in highly-resistive Ta. We obtain an intrinsic spin Hall conductivity for $β$-Ta of -820$\pm$120 ($\hbar$/e) $Ω^{-1}cm^{-1}$ from spin absorption experiments in a large set of lateral spin valve devices. The predominance of the intrinsic mechanism in Ta allows us to linearly enhance the spin Hall angle by tuning the resistivity of Ta, reaching up to -35$\pm$3%, the largest reported value for a pure metal.
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Submitted 11 May, 2018;
originally announced May 2018.
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Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents
Authors:
P. K. Muduli,
M. Kimata,
Y. Omori,
T. Wakamura,
Saroj P. Dash,
YoshiChika Otani
Abstract:
At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation pro…
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At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$O$_{12}$ (YIG-LSV). The spin signals were compared with reference lateral spin valve devices fabricated on nonmagnetic Si/SiO$_2$ substrate with MgO or AlO$_x$ capping. The nonlocal spin valve signal is about 4 and 6 times lower in the EuS-LSV and YIG-LSV, respectively. The suppression in the spin signal has been attributed to enhanced surface spin-flip probability at the Cu-EuS (or Cu-YIG) interface due to interfacial spin-orbit field. Besides spin signal suppression we also found widely observed low temperature peak in the spin signal at $T \sim$30 K is shifted to higher temperature in the case of devices in contact with EuS or YIG. Temperature dependence of spin signal for different injector-detector distances reveal fluctuating exchange field at these interfaces cause additional spin decoherence which limit spin relaxation time in addition to conventional sources of spin relaxation. Our results show that temperature dependent measurement with pure spin current can be used to probe interfacial exchange field at the ferromagnetic insulator-nonmagnetic metal interface.
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Submitted 26 June, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.
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Tuning the spin Hall effect of Pt from the moderately dirty to the superclean regime
Authors:
Edurne Sagasta,
Yasutomo Omori,
Miren Isasa,
Martin Gradhand,
Luis E. Hueso,
Yasuhiro Niimi,
YoshiChika Otani,
Fèlix Casanova
Abstract:
We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin diffusion length and the conductivity, evidencing that the spin relaxation in Pt is governed by the Elliott-Yafet mechanism. We find a single intrinsic spin Ha…
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We systematically measure and analyze the spin diffusion length and the spin Hall effect in Pt with a wide range of conductivities using the spin absorption method in lateral spin valve devices. We observe a linear relation between the spin diffusion length and the conductivity, evidencing that the spin relaxation in Pt is governed by the Elliott-Yafet mechanism. We find a single intrinsic spin Hall conductivity ($σ_{SH}^{int}=1600\pm150\: Ω^{-1}cm^{-1}$) for Pt in the full range studied which is in good agreement with theory. For the first time we have obtained the crossover between the moderately dirty and the superclean scaling regimes of the spin Hall effect by tuning the conductivity. This is equivalent to that obtained for the anomalous Hall effect. Our results explain the spread of the spin Hall angle values in the literature and find a route to maximize this important parameter.
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Submitted 21 July, 2016; v1 submitted 16 March, 2016;
originally announced March 2016.
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Strong Suppression of the Spin Hall Effect in the Spin Glass State
Authors:
Y. Niimi,
M. Kimata,
Y. Omori,
B. Gu,
T. Ziman,
S. Maekawa,
A. Fert,
Y. Otani
Abstract:
We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as that of CuBi binary alloy. Surprisingly, however, it starts to decrease at about 4Tg and become…
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We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as that of CuBi binary alloy. Surprisingly, however, it starts to decrease at about 4Tg and becomes as little as 7 times smaller at 0.5Tg. A similar tendency was also observed in anomalous Hall effects in the ternary alloys. We propose an explanation in terms of a simple model considering the relative dynamics between the localized moment and the conduction electron spin.
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Submitted 8 November, 2015; v1 submitted 3 October, 2015;
originally announced October 2015.
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Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott- and band insulators
Authors:
Yukiko Omori,
Andreas Rüegg,
Manfred Sigrist
Abstract:
Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott- and a band-insulator can also form in the absence of a po…
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Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott- and a band-insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both onsite and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.
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Submitted 2 June, 2014;
originally announced June 2014.
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Inverse spin Hall effect in a closed loop circuit
Authors:
Y. Omori,
F. Auvray,
T. Wakamura,
Y. Niimi,
A. Fert,
Y. Otani
Abstract:
We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current f…
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We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.
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Submitted 22 June, 2014; v1 submitted 8 May, 2014;
originally announced May 2014.
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Extrinsic spin Hall effects measured with lateral spin valve structures
Authors:
Y. Niimi,
H. Suzuki,
Y. Kawanishi,
Y. Omori,
T. Valet,
A. Fert,
Y. Otani
Abstract:
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We pre…
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The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10 times larger than the intrinsic SH angle in Au. We also observed a large SH angle for CuPb but the SHE signal disappeared in a few days. Such an aging effect could be related to a fast mobility of Pb in Cu and has not been observed in CuBi alloys.
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Submitted 3 February, 2014; v1 submitted 14 January, 2014;
originally announced January 2014.
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Edge States in Molecular Solid α-(BEDT-TTF)2I3: Effects of Electron Correlations
Authors:
Yukiko Omori,
Genki Matsuno,
Akito Kobayashi
Abstract:
We examine the edge states of the Dirac electrons in the molecular material α-(BEDT-TTF)2I3 with electron-electron interactions. Based on the analysis of the extended Hubbard model with the Hartree-Fock approximation, we show that the charge-ordered phase has the gapless edge states only in the vicinity of the phase boundary between the zero-gap state and the charge-ordered phase. We also show a p…
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We examine the edge states of the Dirac electrons in the molecular material α-(BEDT-TTF)2I3 with electron-electron interactions. Based on the analysis of the extended Hubbard model with the Hartree-Fock approximation, we show that the charge-ordered phase has the gapless edge states only in the vicinity of the phase boundary between the zero-gap state and the charge-ordered phase. We also show a peculiar flux phase caused by the long-range Coulomb interaction with the same mechanism as topological Mott insulator phase.
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Submitted 18 July, 2013;
originally announced July 2013.
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Ab initio derivation of multi-orbital extended Hubbard model for molecular crystals
Authors:
Masahisa Tsuchiizu,
Yukiko Omori,
Yoshikazu Suzumura,
Marie-Laure Bonnet,
Vincent Robert
Abstract:
From configuration interaction (CI) ab initio calculations, we derive an effective two-orbital extended Hubbard model based on the gerade (g) and ungerade (u) molecular orbitals (MOs) of the charge-transfer molecular conductor (TTM-TTP)I_3 and the single-component molecular conductor [Au(tmdt)_2]. First, by focusing on the isolated molecule, we determine the parameters for the model Hamiltonian so…
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From configuration interaction (CI) ab initio calculations, we derive an effective two-orbital extended Hubbard model based on the gerade (g) and ungerade (u) molecular orbitals (MOs) of the charge-transfer molecular conductor (TTM-TTP)I_3 and the single-component molecular conductor [Au(tmdt)_2]. First, by focusing on the isolated molecule, we determine the parameters for the model Hamiltonian so as to reproduce the CI Hamiltonian matrix. Next, we extend the analysis to two neighboring molecule pairs in the crystal and we perform similar calculations to evaluate the inter-molecular interactions. From the resulting tight-binding parameters, we analyze the band structure to confirm that two bands overlap and mix in together, supporting the multi-band feature. Furthermore, using a fragment decomposition, we derive the effective model based on the fragment MOs and show that the staking TTM-TTP molecules can be described by the zig-zag two-leg ladder with the inter-molecular transfer integral being larger than the intra-fragment transfer integral within the molecule. The inter-site interactions between the fragments follow a Coulomb law, supporting the fragment decomposition strategy.
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Submitted 30 January, 2012; v1 submitted 8 April, 2011;
originally announced April 2011.
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Multi-Orbital Molecular Compound (TTM-TTP)I_3: Effective Model and Fragment Decomposition
Authors:
Masahisa Tsuchiizu,
Yukiko Omori,
Yoshikazu Suzumura,
Marie-Laure Bonnet,
Vincent Robert,
Shoji Ishibashi,
Hitoshi Seo
Abstract:
The electronic structure of the molecular compound (TTM-TTP)I_3, which exhibits a peculiar intra-molecular charge ordering, has been studied using multi-configuration ab initio calculations. First we derive an effective Hubbard-type model based on the molecular orbitals (MOs) of TTM-TTP; we set up a two-orbital Hamiltonian for the two MOs near the Fermi energy and determine its full parameters: th…
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The electronic structure of the molecular compound (TTM-TTP)I_3, which exhibits a peculiar intra-molecular charge ordering, has been studied using multi-configuration ab initio calculations. First we derive an effective Hubbard-type model based on the molecular orbitals (MOs) of TTM-TTP; we set up a two-orbital Hamiltonian for the two MOs near the Fermi energy and determine its full parameters: the transfer integrals, the Coulomb and exchange interactions. The tight-binding band structure obtained from these transfer integrals is consistent with the result of the direct band calculation based on density functional theory. Then, by decomposing the frontier MOs into two parts, i.e., fragments, we find that the stacked TTM-TTP molecules can be described by a two-leg ladder model, while the inter-fragment Coulomb energies are scaled to the inverse of their distances. This result indicates that the fragment picture that we proposed earlier [M.-L. Bonnet et al.: J. Chem. Phys. 132 (2010) 214705] successfully describes the low-energy properties of this compound.
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Submitted 27 December, 2010; v1 submitted 8 September, 2010;
originally announced September 2010.
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Intramolecular charge ordering in the multi molecular orbital system (TTM-TTP)I_3
Authors:
Marie-Laure Bonnet,
Vincent Robert,
Masahisa Tsuchiizu,
Yukiko Omori,
Yoshikazu Suzumura
Abstract:
Starting from the structure of the (TTM-TTP)I_3 molecular-based material, we examine the characteristics of frontier molecular orbitals using ab initio (CASSCF/CASPT2) configurations interaction calculations. It is shown that the singly-occupied and second-highest-occupied molecular orbitals are close to each other, i.e., this compound should be regarded as a two-orbital system. By dividing virtua…
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Starting from the structure of the (TTM-TTP)I_3 molecular-based material, we examine the characteristics of frontier molecular orbitals using ab initio (CASSCF/CASPT2) configurations interaction calculations. It is shown that the singly-occupied and second-highest-occupied molecular orbitals are close to each other, i.e., this compound should be regarded as a two-orbital system. By dividing virtually the [TTM-TTP] molecule into three fragments, an effective model is constructed to rationalize the origin of this picture. In order to investigate the low-temperature symmetry breaking experimentally observed in the crystal, the electronic distribution in a pair of [TTM-TTP] molecules is analyzed from CASPT2 calculations. Our inspection supports and explains the speculated intramolecular charge ordering which is likely to give rise to low-energy magnetic properties.
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Submitted 8 June, 2010; v1 submitted 11 September, 2009;
originally announced September 2009.
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Possible Metastable State Triggered by Competition of Peierls State and Charge Ordered State
Authors:
Y. Omori,
M. Tsuchiizu,
Y. Suzumura
Abstract:
We examine a Peierls ground state and its competing metastable state in the one-dimensional quarter-filled Peierls-Hubbard model with the nearest-neighbor repulsive interaction V and the electron-phonon interaction (\propto 1/K with K being the elastic constant). From the mean-field approach, we obtain the phase diagram for the ground state on the plane of parameters V and K. The coexistent stat…
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We examine a Peierls ground state and its competing metastable state in the one-dimensional quarter-filled Peierls-Hubbard model with the nearest-neighbor repulsive interaction V and the electron-phonon interaction (\propto 1/K with K being the elastic constant). From the mean-field approach, we obtain the phase diagram for the ground state on the plane of parameters V and K. The coexistent state of the spin-density wave and the charge ordering is realized for large V and K. With decreasing K, it exhibits a first-order phase transition to the unconventional Peierls state which is described by the bond-centered charge-density-wave state. In the large region of the Peierls ground state in the phase diagram, there exists the metastable state where the energy takes a local minimum with respect to the lattice distortion. On the basis of the present calculation, we discuss the photoinduced phase observed in the (EDO-TTF)_{2}PF_{6} compound.
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Submitted 12 January, 2008;
originally announced January 2008.
