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Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces
Authors:
Thor Hvid-Olsen,
Christina H. Christoffersen,
Damon J. Carrad,
Nicolas Gauquelin,
Dags Olsteins,
Johan Verbeeck,
Nicolas Bergeal,
Thomas S. Jespersen,
Felix Trier
Abstract:
The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This adds to the already very diverse range of phenomena, including magnetism and extreme magnetoresistance, exhibited by this particular material platform. Tuning and/…
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The $t_{2g}$ band-structure of SrTiO$_3$-based two-dimensional electron gasses (2DEGs), have been found to play a role in features such as the superconducting dome, high-mobility transport, and the magnitude of spin-orbit coupling. This adds to the already very diverse range of phenomena, including magnetism and extreme magnetoresistance, exhibited by this particular material platform. Tuning and/or combining these intriguing attributes could yield significant progress within quantum and spintronics technologies. Doing so demands precise control of the parameters, which requires a better understanding of the factors that affect them. Here we present effects of the $t_{2g}$ band-order inversion, stemming from the growth of spinel-structured $γ$-Al$_2$O$_3$ onto perovskite SrTiO$_3$. Electronic transport measurements show that with LaAlO$_3$/SrTiO$_3$ as the reference, the carrier density and electron mobility are enhanced, and the sample displays a reshaping of the superconducting dome. Additionally, unpaired spins are evidenced by increasing Anomalous Hall Effect with decreasing temperature, entering the same temperature range as the superconducting transition, and a Kondo-like upturn in the sheet resistance. Finally, it is argued that the high-mobility $d_{xz/yz}$-band is more likely than the $d_{xy}$-band to host the supercurrent.
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Submitted 20 May, 2025; v1 submitted 6 November, 2024;
originally announced November 2024.
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Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Authors:
Dāgs Olšteins,
Gunjan Nagda,
Damon J. Carrad,
Daria V. Beznasyuk,
Christian E. N. Petersen,
Sara Martí-Sánchez,
Jordi Arbiol,
Thomas Sand Jespersen
Abstract:
New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within larg…
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New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
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Submitted 22 May, 2024; v1 submitted 10 January, 2024;
originally announced January 2024.
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Cryogenic Multiplexing with Bottom-Up Nanowires
Authors:
Dāgs Olšteins,
Gunjan Nagda,
Damon J. Carrad,
Daria V. Beznasiuk,
Christian E. N. Petersen,
Sara Martí-Sánchez,
Jordi Arbiol,
Thomas Sand Jespersen
Abstract:
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrat…
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Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits.
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Submitted 25 April, 2023;
originally announced April 2023.
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Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
Authors:
Sabbir A. Khan,
Sara Martí-Sánchez,
Dags Olsteins,
Charalampos Lampadaris,
Damon James Carrad,
Yu Liu,
Judith Quiñones,
Maria Chiara Spadaro,
Thomas S. Jespersen,
Peter Krogstrup,
Jordi Arbiol
Abstract:
Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here,…
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Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $\mathrm{α-Sn}$ or superconducting $\mathrm{β-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $\mathrm{β-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $\mathrm{α-Sn}$ phase evolves into a polycrystalline shell of coexisting $\mathrmα$ and $\mathrmβ$ phases, where the $β/α$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $\mathrm{β-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems.
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Submitted 2 January, 2023; v1 submitted 26 December, 2022;
originally announced December 2022.
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Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions
Authors:
Damon J. Carrad,
Lukas Stampfer,
Dags Olsteins,
Christian E. N. Petersen,
Sabbir A. Khan,
Peter Krogstrup,
Thomas Sand Jespersen
Abstract:
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperature…
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Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, $n$, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge $ne$ transferred by the $n^\mathrm{th}$ order tunnel process. The measurements suggest PAT as a powerful method for assigning the origin of low energy spectral features in hybrid Josephson devices.
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Submitted 26 July, 2022; v1 submitted 6 May, 2022;
originally announced May 2022.
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Electronic transport in double-nanowire superconducting islands with multiple terminals
Authors:
Alexandros Vekris,
Juan Carlos Estrada Saldaña,
Thomas Kanne,
Thor Hvid-Olsen,
Mikelis Marnauza,
Dags Olsteins,
Matteo M. Wauters,
Michele Burrello,
Jesper Nygård,
Kasper Grove-Rasmussen
Abstract:
We characterize in-situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends are consistent with a sub-gap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals and free of quasiparticle poisoning, these nanowires…
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We characterize in-situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends are consistent with a sub-gap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals and free of quasiparticle poisoning, these nanowires show promise for the implementation of several proposals that rely on parallel nanowire platforms.
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Submitted 17 March, 2022;
originally announced March 2022.
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Asymmetric Little-Parks Oscillations in Full Shell Double Nanowires
Authors:
Alexandros Vekris,
Juan Carlos Estrada Saldaña,
Joeri de Bruijckere,
Sara Lorić,
Thomas Kanne,
Mikelis Marnauza,
Dags Olsteins,
Jesper Nygård,
Kasper Grove-Rasmussen
Abstract:
Little-Parks oscillations of a hollow superconducting cylinder are of interest for flux-driven topological superconductivity in single Rashba nanowires. The oscillations are typically symmetric in the orientation of the applied magnetic flux. Using double InAs nanowires coated by an epitaxial superconducting Al shell which, despite the non-centro-symmetric geometry, behaves effectively as one holl…
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Little-Parks oscillations of a hollow superconducting cylinder are of interest for flux-driven topological superconductivity in single Rashba nanowires. The oscillations are typically symmetric in the orientation of the applied magnetic flux. Using double InAs nanowires coated by an epitaxial superconducting Al shell which, despite the non-centro-symmetric geometry, behaves effectively as one hollow cylinder, we demonstrate that a small misalignment of the applied parallel field with respect to the axis of the nanowires can produce field-asymmetric Little-Parks oscillations. These are revealed by the simultaneous application of a magnetic field perpendicular to the misaligned parallel field direction. The asymmetry occurs in both the destructive regime, in which superconductivity is destroyed for half-integer quanta of flux through the shell, and in the non-destructive regime, where superconductivity is depressed but not fully destroyed at these flux values.
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Submitted 2 June, 2021;
originally announced June 2021.
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Josephson junctions in double nanowires bridged by in-situ deposited superconductors
Authors:
Alexandros Vekris,
Juan Carlos Estrada Saldaña,
Thomas Kanne,
Mikelis Marnauza,
Dags Olsteins,
Furong Fan,
Xiaobo Li,
Thor Hvid-Olsen,
Xiaohui Qiu,
Hongqi Xu,
Jesper Nygård,
Kasper Grove-Rasmussen
Abstract:
We characterize parallel double quantum dot Josephson junctions based on closely-grown double nanowires bridged by in-situ deposited superconductors. The parallel double dot behavior occurs despite the closeness of the nanowires and the potential risk of nanowire clamping during growth. By tuning the charge filling and lead couplings, we map out the simplest parallel double quantum dot Yu-Shiba-Ru…
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We characterize parallel double quantum dot Josephson junctions based on closely-grown double nanowires bridged by in-situ deposited superconductors. The parallel double dot behavior occurs despite the closeness of the nanowires and the potential risk of nanowire clamping during growth. By tuning the charge filling and lead couplings, we map out the simplest parallel double quantum dot Yu-Shiba-Rusinov phase diagram. Our quasi-independent two-wire hybrids show promise for the realization of exotic topological phases.
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Submitted 4 April, 2021;
originally announced April 2021.
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Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires
Authors:
Lukas Stampfer,
Damon J. Carrad,
Dags Olsteins,
Christian E. N. Petersen,
Sabbir A. Khan,
Peter Krogstrup,
Thomas S. Jespersen
Abstract:
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires a…
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Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models.
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Submitted 1 April, 2021;
originally announced April 2021.
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Double nanowires for hybrid quantum devices
Authors:
Thomas Kanne,
Dags Olsteins,
Mikelis Marnauza,
Alexandros Vekris,
Juan Carlos Estrada Saldana,
Sara Loric,
Rasmus D. Schlosser,
Daniel Ross,
Szabolcs Csonka,
Kasper Grove-Rasmussen,
Jesper Nygård
Abstract:
Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of t…
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Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of their interfaces and geometry. We present a strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy. A superconducting layer is deposited onto nanowires without breaking vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires, with full or half-shell superconductor coatings. We demonstrate their utility in complex quantum devices by electron transport measurements.
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Submitted 25 March, 2021;
originally announced March 2021.
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Epitaxial Pb on InAs nanowires
Authors:
Thomas Kanne,
Mikelis Marnauza,
Dags Olsteins,
Damon J. Carrad,
Joachim E. Sestoft,
Joeri de Bruijckere,
Lunjie Zeng,
Erik Johnson,
Eva Olsson,
Kasper Grove-Rasmussen,
Jesper Nygård
Abstract:
Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable condi…
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Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems.
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Submitted 26 February, 2020;
originally announced February 2020.
