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Total energy calculation for the metallic hcp phase of Zn in the bulk, layered, and quantum dot limits
Authors:
D. Olguín
Abstract:
The structural and electronic properties of the metallic hcp phase of Zn in the bulk, monolayer, bilayer, and quantum dot limits have been studied by using total energy calculations. From our calculated density of states and electronic band structure, in agreement with previous work, bulk hybridization of the Zn--$4s$, $3p$, and $3d$ orbitals is obtained. Furthermore, we found that this orbital hy…
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The structural and electronic properties of the metallic hcp phase of Zn in the bulk, monolayer, bilayer, and quantum dot limits have been studied by using total energy calculations. From our calculated density of states and electronic band structure, in agreement with previous work, bulk hybridization of the Zn--$4s$, $3p$, and $3d$ orbitals is obtained. Furthermore, we found that this orbital hybridization is also obtained for the monolayer, bilayer, and quantum dot systems. At the same time, we found that the Zn monolayer and bilayer systems show electronic properties characteristic of lamellar systems, while the quantum dot system shows the behavior predicted for a 0D system.
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Submitted 30 September, 2020;
originally announced September 2020.
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Empirical electronic band structure study of silver low-index surfaces
Authors:
H. J. Herrera-Suarez,
A. Rubio-Ponce,
D. Olguin
Abstract:
We studied the electronic band structure of the low-index fcc Ag surfaces (001), (110) and (111), by using the empirical tight-binding method in addition with the surface Green function matching method. We report the energy values for different surface and resonance states and compare with the available experimental and theoretical data.
We studied the electronic band structure of the low-index fcc Ag surfaces (001), (110) and (111), by using the empirical tight-binding method in addition with the surface Green function matching method. We report the energy values for different surface and resonance states and compare with the available experimental and theoretical data.
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Submitted 22 November, 2013;
originally announced November 2013.
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Electronic band structure of platinum low--index surfaces: an {\it ab initio} and tight--binding study. II
Authors:
H. J. Herrera-Suarez,
A. Rubio-Ponce,
D. Olguin
Abstract:
As a second part of a previous paper, here the calculated electronic band structure of ideal Pt(100) and Pt(110) surfaces, studied using density functional theory and the empirical tight-binding method, is presented. A detailed discussion of the surface- and resonance--states is given. It is shown that the calculated surface- and resonance--states of ideal Pt(100) surfaces agree very well with the…
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As a second part of a previous paper, here the calculated electronic band structure of ideal Pt(100) and Pt(110) surfaces, studied using density functional theory and the empirical tight-binding method, is presented. A detailed discussion of the surface- and resonance--states is given. It is shown that the calculated surface- and resonance--states of ideal Pt(100) surfaces agree very well with the available experimental data. For Pt(110), some of the surface- and resonance-states are characteristic of the low degree of symmetry of the surface and are identified as being independent of surface reconstruction effects. As in the previous paper, the density functional calculations were performed using the full potential linearized augmented plane wave method, and the empirical calculations were performed using the tight-binding method and Surface Green's Function Matching Method.
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Submitted 25 August, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
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Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys
Authors:
E. Lopez-Apreza,
J. Arriaga,
D. Olguin
Abstract:
Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were calculated. We have performed accurate {\it ab initio} total energy calculations using the full--potential linearized augmented plane wave (FP--LAPW) method to inves…
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Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were calculated. We have performed accurate {\it ab initio} total energy calculations using the full--potential linearized augmented plane wave (FP--LAPW) method to investigate the structural and electronic properties. In both alloys we found that the fundamental parameters do not follow Vegard's law. The lattice parameters, $a, c,$ and $u$, for the Al$_x$Ga$_{1-x}$N alloy are found to exhibit downward bowing, while for In$_x$Ga$_{1-x}$N there is an upward bowing for the $a$ and $c$ parameters and a downward bowing for the internal parameter, $u$. Furthermore, we found that for both alloys, the band gap value does not follow Vegard's law. As a by--product of our electronic band structure calculations, the effective masses of the binary compounds as well as their related alloys were calculated. We show that the calculated properties for the binary compounds, as well as for the studied alloys, show good agreement with most of the previously reported results. Finally, using the frozen phonon approach, the A$_1(TO)$ mode for the different systems studied in this work was calculated. Our calculations show good agreement with experimental values reported for the binary compounds. For the ternary alloys, our calculations reproduce experimental values for Al$_x$Ga$_{1-x}$N as well as theoretical predictions for In$_x$Ga$_{1-x}$N.
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Submitted 3 November, 2008;
originally announced November 2008.
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Optical studies of gap, hopping energies and the Anderson-Hubbard parameter in the zigzag-chain compound SrCuO2
Authors:
Z. V. Popovic,
V. A. Ivanov,
M. J. Konstantinovic,
A. Cantarero,
J. Martinez-Pastor,
D. Olguin,
M. I. Alonso,
M. Garriga,
O. P. Khuong,
A. Vietkin,
V. V. Moshchalkov
Abstract:
We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlat…
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We have investigated the electronic structure of the zigzag ladder (chain) compound SrCuO2 combining polarized optical absorption, reflection, photoreflectance and pseudo-dielectric function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular) to the Cu-O chains. We have found that the lowest energy gap, the correlation gap, is temperature independent. The electronic structure of this oxide is calculated using both the local-spin-density-approximation with gradient correction method, and the tight-binding theory for the correlated electrons. The calculated density of electronic states for non-correlated and correlated electrons shows quasi-one-dimensional character. The correlation gap values of 1.42 eV (indirect transition) and 1.88 eV (direct transition) have been calculated with the electron hopping parameters t = 0.30 eV (along a chain), t_yz = 0.12 eV (between chains) and the Anderson-Hubbard repulsion on copper sites U= 2.0 eV. We concluded that SrCuO_2 belongs to the correlated-gap insulators.
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Submitted 19 January, 2001;
originally announced January 2001.
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Electronic structure and band gap composition-dependence of the II-VI quaternary alloys
Authors:
A. E. Garcia,
A. Zepeda-Navratil,
A. Camacho,
D. Olguin,
R. Baquero
Abstract:
Based on a successful description of II-VI ternary alloys, which introduces an empirical bowing parameter to the widely used virtual crystal approximation, we set up a tight-binding Hamiltonian to describe the Zn_{1-y}Cd_ySe_{1-x}Te_x and Zn_{.9}Cd_{.1}S_{.07}Se_{.93} quaternary alloys. We just use a formula that can be thought as a straightforward generalization of the virtual crystal approxima…
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Based on a successful description of II-VI ternary alloys, which introduces an empirical bowing parameter to the widely used virtual crystal approximation, we set up a tight-binding Hamiltonian to describe the Zn_{1-y}Cd_ySe_{1-x}Te_x and Zn_{.9}Cd_{.1}S_{.07}Se_{.93} quaternary alloys. We just use a formula that can be thought as a straightforward generalization of the virtual crystal approximation for this case. Our Hamiltonians reproduce very well the change in the band gap value with the composition observed in recent experimental reports.
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Submitted 4 December, 1996;
originally announced December 1996.
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Electronic structure of the valence band of the II--VI wide band gap binary/ternary alloy interfaces
Authors:
D. Olguin,
R. Baquero
Abstract:
We present an electronic structure calculation of the valence band for some II--VI binary/ternary alloy interfaces. We use the empirical tight-binding method and the surface Green's function matching method. For the ternary alloys we use our previously set Hamiltonians they describe well the band gap change with composition obtained experimentally. At the interface domain, we find three non-disp…
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We present an electronic structure calculation of the valence band for some II--VI binary/ternary alloy interfaces. We use the empirical tight-binding method and the surface Green's function matching method. For the ternary alloys we use our previously set Hamiltonians they describe well the band gap change with composition obtained experimentally. At the interface domain, we find three non-dispersive and two interface states besides the known bulk bands. The non-dispersive states are reminiscent of the ones already obtained experimentally as well as theoretically, in (001)-oriented surfaces. We make use of the available theoretical calculations for the (001)-oriented surfaces of the binary compounds and for the binary/binary interfaces to compare our new results with.
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Submitted 19 September, 1996;
originally announced September 1996.
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Electronic structure of the valence band of II--VI wide band gap semiconductor interfaces
Authors:
D. Olguin,
R. Baquero
Abstract:
In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We make use of the well--known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface…
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In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We make use of the well--known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface is constituted by four atomic layers. We consider here anion--anion interfaces only. We have included the non common either anion or cation (CdTe/ZnSe), common cation (CdTe/CdSe), and common anion (CdTe/ZnTe) cases. We have aligned the top of the the valence band at the whole interface dominion as the boundary condition. The overall conclusion is that the interface is a very rich space where changes in the band structure with respect to the bulk do occur. This is true not only at interfaces with no common atoms but also at the ones with either common cation or anion atoms irrespective to the fact that the common atomic layers are facing or not each other at the interface. Finally, we found that the (001)--surface--induced bulks states reappear at the interface in contrast to the pure (001)--surface resonances which disappear. This confirm our previous interpretation of such states as {\it bulk} states. Their behaviour is very interesting at the interface. We have refine the terminology for these states to up--date it to the new results and have call them {\it Frontier induced semi--infinite medium} (FISIM) states. They might well appear also in quantum wells and superlattices and have influence in the transport properties of these systems.
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Submitted 18 June, 1996;
originally announced June 1996.
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Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds
Authors:
Daniel Olguin,
Rafael Baquero
Abstract:
We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gives place to new states in the electronic structure: surface resonances and two dimensional bulk states. The two dimensional bulk states a…
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We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gives place to new states in the electronic structure: surface resonances and two dimensional bulk states. The two dimensional bulk states are of the same character of those reported recently in CdTe(100) [Phys. Rev. {\bf 50}, 1980 (1994)]. We analyze the states in the valence band region and compare with photoemission spectroscopy data.
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Submitted 14 June, 1996;
originally announced June 1996.
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(001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors
Authors:
D. Olguín,
R. Baquero
Abstract:
In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and Höchst. We have characterized this band as a surface--induced bulk state. In a second paper we showed that a similar state does exist in II--VI and III--V zincblende semiconductor compounds. In this paper we show that there are more such sta…
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In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and Höchst. We have characterized this band as a surface--induced bulk state. In a second paper we showed that a similar state does exist in II--VI and III--V zincblende semiconductor compounds. In this paper we show that there are more such states within the valence band energy interval. We use tight-binding hamiltonians and the surface Green's function matching method to calculate the surface and surface--induced bulk states in the wide band gap zincblende semiconductors CdTe, CdSe, ZnTe and ZnSe. We find a distinctive surface state for the cation and two for the anion termination of the (001)--surface and three (001)--surface--induced bulk states with energies that correspond to the value of the heavy hole, light hole and spin--orbit bands at $X$.
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Submitted 20 January, 1995;
originally announced January 1995.
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On the Origin of the -4.4 eV Band in CdTe(100)"
Authors:
D. Olguin,
R. Baquero
Abstract:
We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at…
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We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at $Γ$ according to the results of Niles and Höchst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.
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Submitted 16 March, 1994;
originally announced March 1994.
