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Discovery of transient topological crystalline order in optically driven SnSe
Authors:
Masataka Mogi,
Dongsung Choi,
Kyoung Hun Oh,
Diana Golovanova,
Yufei Zhao,
Yifan Su,
Zongqi Shen,
Doron Azoury,
Haoyu Xia,
Batyr Ilyas,
Tianchuang Luo,
Noriaki Kida,
Taito Osaka,
Tadashi Togashi,
Binghai Yan,
Nuh Gedik
Abstract:
Ultrafast optical excitation provides a powerful route for accessing emergent quantum phases far from equilibrium, enabling transient light-induced phenomena such as magnetism, ferroelectricity, and superconductivity. However, extending this approach to induce topological phases, especially in conventional semiconductors, remains challenging. Here, we report the observation of a thermally inaccess…
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Ultrafast optical excitation provides a powerful route for accessing emergent quantum phases far from equilibrium, enabling transient light-induced phenomena such as magnetism, ferroelectricity, and superconductivity. However, extending this approach to induce topological phases, especially in conventional semiconductors, remains challenging. Here, we report the observation of a thermally inaccessible, transient topological crystalline order in the layered semiconductor SnSe, a trivial insulator with a sizable (~ 0.8 eV) band gap, induced by femtosecond above-gap excitation. Time- and angle-resolved photoemission spectroscopy directly reveals the sub-picosecond emergence of Dirac-like linear dispersions within the band gap. Their features, including a high Fermi velocity (~ 2.5x10^5 m/s), multiple Dirac points away from high-symmetry momenta, and independence from probe photon energy, are consistent with mirror-symmetry-protected surface states of a topological crystalline insulator. The observed spectral dynamics, combined with density functional theory calculations, indicate that the femtosecond excitation transiently increases lattice symmetry, enabling topological crystalline order to emerge. Our discovery opens new avenues for ultrafast optical control of topological quantum phases in semiconductors, with potential applications in quantum and spintronic devices.
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Submitted 16 May, 2025; v1 submitted 20 February, 2025;
originally announced February 2025.
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Dynamical decoding of the competition between charge density waves in a kagome superconductor
Authors:
Honglie Ning,
Kyoung Hun Oh,
Yifan Su,
Alexander von Hoegen,
Zach Porter,
Andrea Capa Salinas,
Quynh L Nguyen,
Matthieu Chollet,
Takahiro Sato,
Vincent Esposito,
Matthias C Hoffmann,
Adam White,
Cynthia Melendrez,
Diling Zhu,
Stephen D Wilson,
Nuh Gedik
Abstract:
The kagome superconductor CsV$_3$Sb$_5$ hosts a variety of charge density wave (CDW) phases, which play a fundamental role in the formation of other exotic electronic instabilities. However, identifying the precise structure of these CDW phases and their intricate relationships remain the subject of intense debate, due to the lack of static probes that can distinguish the CDW phases with identical…
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The kagome superconductor CsV$_3$Sb$_5$ hosts a variety of charge density wave (CDW) phases, which play a fundamental role in the formation of other exotic electronic instabilities. However, identifying the precise structure of these CDW phases and their intricate relationships remain the subject of intense debate, due to the lack of static probes that can distinguish the CDW phases with identical spatial periodicity. Here, we unveil the competition between two coexisting $2\times2\times2$ CDWs in CsV$_3$Sb$_5$ harnessing time-resolved X-ray diffraction. By analyzing the light-induced changes in the intensity of CDW superlattice peaks, we demonstrate the presence of both phases, each displaying a significantly different amount of melting upon excitation. The anomalous light-induced sharpening of peak width further shows that the phase that is more resistant to photo-excitation exhibits an increase in domain size at the expense of the other, thereby showcasing a hallmark of phase competition. Our results not only shed light on the interplay between the multiple CDW phases in CsV$_3$Sb$_5$, but also establish a non-equilibrium framework for comprehending complex phase relationships that are challenging to disentangle using static techniques.
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Submitted 5 March, 2024;
originally announced March 2024.
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Direct Observation of Collective Modes of the Charge Density Wave in the Kagome Metal CsV$_3$Sb$_5$
Authors:
Doron Azoury,
Alexander von Hoegen,
Yifan Su,
Kyoung Hun Oh,
Tobias Holder,
Hengxin Tan,
Brenden R. Ortiz,
Andrea Capa Salinas,
Stephen D. Wilson,
Binghai Yan,
Nuh Gedik
Abstract:
A new group of kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) exhibit a variety of intertwined unconventional electronic phases, which emerge from a puzzling charge density wave phase. Understanding of this parent charge order phase is crucial for deciphering the entire phase diagram. However, the mechanism of the charge density wave is still controversial, and its primary source of fluctuations - the…
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A new group of kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) exhibit a variety of intertwined unconventional electronic phases, which emerge from a puzzling charge density wave phase. Understanding of this parent charge order phase is crucial for deciphering the entire phase diagram. However, the mechanism of the charge density wave is still controversial, and its primary source of fluctuations - the collective modes - have not been experimentally observed. Here, we use ultrashort laser pulses to melt the charge order in CsV$_3$Sb$_5$ and record the resulting dynamics using femtosecond angle-resolved photoemission. We resolve the melting time of the charge order and directly observe its amplitude mode, imposing a fundamental limit for the fastest possible lattice rearrangement time. These observations together with ab-initio calculations provide clear evidence for a structural rather than electronic mechanism of the charge density wave. Our findings pave the way for better understanding of the unconventional phases hosted on the kagome lattice.
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Submitted 24 January, 2023;
originally announced January 2023.
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Molecular Dynamics Simulation of Electron Trapping in the Sapphire Lattice
Authors:
C. Rambaut,
K. H. Oh,
H. Jaffrezic,
J. Kohanoff,
S. Fayeulle
Abstract:
Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge model~\cite{blaise,blaise1}. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (\alumina) ca…
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Energy storage and release in dielectric materials can be described on the basis of the charge trapping mechanism. Most phenomenological aspects have been recently rationalized in terms of the space charge model~\cite{blaise,blaise1}. Dynamical aspects are studied here by performing Molecular Dynamics simulations. We show that an excess electron introduced into the sapphire lattice (\alumina) can be trapped only at a limited number of sites. The energy gained by allowing the electron to localize in these sites is of the order of 4-5 eV, in good agreement with the results of the space charge model. Displacements of the neighboring ions due to the implanted charge are shown to be localized in a small region of about 5~Å. Detrapping is observed at 250 $K$. The ionic displacements turn out to play an important role in modifying the potential landscape by lowering, in a dynamical way, the barriers that cause localization at low temperature.
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Submitted 16 October, 1995;
originally announced October 1995.
