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Showing 1–2 of 2 results for author: Ogiso, O

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  1. arXiv:1712.09198  [pdf

    cond-mat.mtrl-sci

    Direct observation of double valence-band extrema and anisotropic effective masses of the thermoelectric material SnSe

    Authors: T. Nagayama, K. Terashima, T. Wakita, H. Fujiwara, T. Fukura, Y. Yano, K. Ono, H. Kumigashira, O. Ogiso, A. Yamashita, Y. Takano, H. Mori, H. Usui, M. Ochi, K. Kuroki, Y. Muraoka, T. Yokoya

    Abstract: Synchrotron-based angle-resolved photoemission spectroscopy is used to determine the electronic structure of layered SnSe, which was recently turned out to be a potential thermoelectric material. We observe that the top of the valence band consists of two nearly independent hole bands, whose tops differ by ~20 meV in energy, indicating the necessity of a multivalley model to describe the thermoele… ▽ More

    Submitted 26 December, 2017; originally announced December 2017.

    Comments: 14 pages including 2 figures + 2 pages of supplementary data

    Journal ref: Jpn. J. Appl. Phys. 57, 010301 (2018)

  2. arXiv:1710.01863  [pdf

    cond-mat.mtrl-sci

    Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

    Authors: Aichi Yamashita, Osamu Ogiso, Ryo Matsumoto, Masashi Tanaka, Hiroshi Hara, Hiromi Tanaka, Hiroyuki Takeya, Chul-Ho Lee, Yoshihiko Takano

    Abstract: We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. T… ▽ More

    Submitted 4 October, 2017; originally announced October 2017.

    Comments: 13 pages, 3 figures