Showing 1–50 of 58 results for author: Oezyilmaz, B

Superlative spin transport of holes in ultra-thin black phosphorus

Authors: Jiawei Liu, Deyi Fu, Tingyu Qu, Deqiang Zhang, Kenji Watanabe, Takashi Taniguchi, Ahmet Avsar, Barbaros Ozyilmaz

Abstract: The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in semiconductors. While traditional semiconductors such as silicon support spin transport, the effects of carrier type and concentration on important spin parameters are n… ▽ More The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in semiconductors. While traditional semiconductors such as silicon support spin transport, the effects of carrier type and concentration on important spin parameters are not well understood due to the need for extrinsic doping, which can cause additional momentum and hence spin scattering. Two-dimensional semiconductors, on the other hand, offer the ability to tune carrier type and concentration through field effect gating and inherently have long intrinsic spin lifetimes, making them a desirable platform for spin transport. Here, we study gate-tunable spin transport across narrow band-gap black phosphorus-based spin valves which enable us to systematically investigate spin transport with varying hole and electron concentrations under non-local geometry. Our findings demonstrate exceptional pure spin transport that approaches intrinsic limit, particularly in the low hole doping range. We achieved record non-local signals reaching 350 Ω and spin lifetimes exceeding 16 ns. Contrary to the behaviour seen in typical semiconductors, we find that the spin transport performance of holes in black phosphorus is significantly better than that of electrons, with the Elliott-Yafet process being the primary spin scattering mechanism. The observation of gate-tunable nanosecond spin lifetimes and colossal pure spin signals in both p- and n-type black phosphorus offers promising prospects for the development of novel semiconducting spintronics devices requiring sharp p-n interfaces. △ Less

Submitted 20 February, 2025; originally announced February 2025.

A unified theoretical framework for Kondo superconductors: Periodic Anderson impurities with attractive pairing and Rashba spin-orbit coupling

Authors: Shangjian Jin, Darryl C. W. Foo, Tingyu Qu, Barbaros Özyilmaz, Shaffique Adam

Abstract: Magnetic superconductors manifest a fascinating interplay between their magnetic and superconducting properties. This becomes evident, for example, in the significant enhancement of the upper critical field observed in uranium-based superconductors, or the destruction of superconductivity well below the superconducting transition temperature $T_c$ in cobalt-doped NbSe$_2$. In this work, we argue t… ▽ More Magnetic superconductors manifest a fascinating interplay between their magnetic and superconducting properties. This becomes evident, for example, in the significant enhancement of the upper critical field observed in uranium-based superconductors, or the destruction of superconductivity well below the superconducting transition temperature $T_c$ in cobalt-doped NbSe$_2$. In this work, we argue that the Kondo interaction plays a pivotal role in governing these behaviors. By employing a periodic Anderson model, we study the Kondo effect in superconductors with either singlet or triplet pairing. In the regime of small impurity energies and high doping concentrations, we find the emergence of a Kondo resistive region below $T_c$. While a magnetic field suppresses singlet superconductivity, it stabilizes triplet pairing through the screening of magnetic impurities, inducing reentrant superconductivity at high fields. Moreover, introducing an antisymmetric spin-orbital coupling suppresses triplet superconductivity. This framework provides a unified picture to understand the observation of Kondo effect in NbSe$_2$ as well as the phase diagrams in Kondo superconductors such as UTe$_2$, and URhGe. △ Less

Submitted 19 September, 2024; originally announced September 2024.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 111, 014505 (2025)

Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide

Authors: Tingyu Qu, Shangjian Jin, Fuchen Hou, Deyi Fu, Junye Huang, Darryl Foo Chuan Wei, Xiao Chang, Kenji Watanabe, Takashi Taniguchi, Junhao Lin, Shaffique Adam, Barbaros Özyilmaz

Abstract: The co-existence of ferromagnetism and superconductivity becomes possible through unconventional pairing in the superconducting state. Such materials are exceedingly rare in solid-state systems but are promising platforms to explore topological phases, such as Majorana bound states. Theoretical investigations date back to the late 1950s, but only a few systems have so far been experimentally ident… ▽ More The co-existence of ferromagnetism and superconductivity becomes possible through unconventional pairing in the superconducting state. Such materials are exceedingly rare in solid-state systems but are promising platforms to explore topological phases, such as Majorana bound states. Theoretical investigations date back to the late 1950s, but only a few systems have so far been experimentally identified as potential hosts. Here, we show that atomically-thin niobium diselenide (NbSe$_2$) intercalated with dilute cobalt atoms spontaneously displays ferromagnetism below the superconducting transition temperature ($T_c$). We elucidate the origin of this phase by constructing a magnetic tunnel junction that consists of cobalt and cobalt-doped niobium diselenide (Co-NbSe$_2$) as the two ferromagnetic electrodes, with an ultra-thin boron nitride as the tunnelling barrier. At a temperature well below $T_c$, the tunnelling magnetoresistance shows a bistable state, suggesting a ferromagnetic order in Co-NbSe$_2$. We propose a RKKY exchange coupling mechanism based on the spin-triplet superconducting order parameter to mediate such ferromagnetism. We further perform non-local lateral spin valve measurements to confirm the origin of the ferromagnetism. The observation of Hanle precession signals show spin diffusion length up to micrometres below Tc, demonstrating an intrinsic spin-triplet nature in superconducting NbSe$_2$. Our discovery of superconductivity-mediated ferromagnetism opens the door to an alternative design of ferromagnetic superconductors △ Less

Submitted 11 June, 2023; originally announced June 2023.

Comments: 26 pages, 13 figures

Heteromoiré Engineering on Magnetic Bloch Transport in Twisted Graphene Superlattices

Authors: Fanrong Lin, Jiabin Qiao, Junye Huang, Jiawei Liu, Deyi Fu, Alexander S. Mayorov, Hao Chen, Paromita Mukherjee, Tingyu Qu, Chorng Haur Sow, Kenji Watanabe, Takashi Taniguchi, Barbaros Özyilmaz

Abstract: Localized electrons subject to applied magnetic fields can restart to propagate freely through the lattice in delocalized magnetic Bloch states (MBSs) when the lattice periodicity is commensurate with the magnetic length. Twisted graphene superlattices with moiré wavelength tunability enable experimental access to the unique delocalization in a controllable fashion. Here we report the observation… ▽ More Localized electrons subject to applied magnetic fields can restart to propagate freely through the lattice in delocalized magnetic Bloch states (MBSs) when the lattice periodicity is commensurate with the magnetic length. Twisted graphene superlattices with moiré wavelength tunability enable experimental access to the unique delocalization in a controllable fashion. Here we report the observation and characterization of high-temperature Brown-Zak (BZ) oscillations which come in two types, 1/B and B periodicity, originating from the generation of integer and fractional MBSs, in the twisted bilayer and trilayer graphene superlattices, respectively. Coexisting periodic-in-1/B oscillations assigned to different moiré wavelengths, are dramatically observed in small-angle twisted bilayer graphene, which may arise from angle-disorder-induced in-plane heteromoiré superlattices. Moreover, the vertical stacking of heteromoiré supercells in double-twisted trilayer graphene results in a mega-sized superlattice. The exotic superlattice contributes to the periodic-in-B oscillation and dominates the magnetic Bloch transport. △ Less

Submitted 22 May, 2022; originally announced May 2022.

Journal ref: Nano Lett. 2020, 20, 10, 7572-7579

Synthesis and properties of free-standing monolayer amorphous carbon

Authors: Chee-Tat Toh, Hongji Zhang, Junhao Lin, Alexander S. Mayorov, Yun-Peng Wang, Carlo M. Orofeo, Darim Badur Ferry, Henrik Andersen, Nurbek Kakenov, Zenglong Guo, Irfan Haider Abidi, Hunter Sims, Kazu Suenaga, Sokrates T. Pantelides, Barbaros Özyilmaz

Abstract: Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered.… ▽ More Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered. Here we report the synthesis, by laser-assisted chemical vapour deposition, of centimetre-scale, free-standing, continuous and stable monolayer amorphous carbon, topologically distinct from disordered graphene. Unlike in bulk materials, the structure of monolayer amorphous carbon can be determined by atomic-resolution imaging. Extensive characterization by Raman and X-ray spectroscopy and transmission electron microscopy reveals the complete absence of long-range periodicity and a threefold-coordinated structure with a wide distribution of bond lengths, bond angles, and five-, six-, seven- and eight-member rings. The ring distribution is not a Zachariasen continuous random network, but resembles the competing (nano)crystallite model. We construct a corresponding model that enables density-functional-theory calculations of the properties of monolayer amorphous carbon, in accordance with observations. Direct measurements confirm that it is insulating, with resistivity values similar to those of boron nitride grown by chemical vapour deposition. Free-standing monolayer amorphous carbon is surprisingly stable and deforms to a high breaking strength, without crack propagation from the point of fracture. The excellent physical properties of this stable, free-standing monolayer amorphous carbon could prove useful for permeation and diffusion barriers in applications such as magnetic recording devices and flexible electronics. △ Less

Submitted 19 May, 2021; originally announced May 2021.

Journal ref: Nature volume 577, pages 199-203 (2020)

Stabilization of antiferromagnetism in 1T-Fe$_{0.05}$TaS$_2$

Authors: Q. Niu, W. Zhang, Y. T. Chan, E. C. T. O'Farrell, R. Doganov, K. Y. Yip, Kwing To Lai, W. C. Yu, B. Ozyilmaz, G. R. Stewart, J. S. Kim, Swee K. Goh

Abstract: 1T-TaS$_2$ is a prototypical charge-density-wave (CDW) system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in 1T-TaS$_2$. Here, we report the stabilization of the antiferromagnetic order by the intercalation of a small amount of Fe into the van der Waals gap of 1T-TaS$_2$, i… ▽ More 1T-TaS$_2$ is a prototypical charge-density-wave (CDW) system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in 1T-TaS$_2$. Here, we report the stabilization of the antiferromagnetic order by the intercalation of a small amount of Fe into the van der Waals gap of 1T-TaS$_2$, i.e. forming 1T-Fe$_{0.05}$TaS$_2$. Upon cooling from 300~K, the electrical resistivity increases with a decreasing temperature before reaching a maximum value at around 15~K, which is close to the Neel temperature determined from our magnetic susceptibility measurement. The antiferromagnetic state can be fully suppressed when the sample thickness is reduced, indicating that the antiferromagnetic order in Fe$_{0.05}$TaS$_2$ has a non-negligible three-dimensional character. For the bulk Fe$_{0.05}$TaS$_2$, a comparison of our high pressure electrical transport data with that of 1T-TaS$_2$ indicates that, at ambient pressure, Fe$_{0.05}$TaS$_2$ is in the nearly commensurate charge-density-wave (NCCDW) phase near the border of the Mott insulating state. The temperature-pressure phase diagram thus reveals an interesting decoupling of the antiferromagnetism from the Mott insulating state. △ Less

Submitted 9 June, 2020; originally announced June 2020.

Comments: Q. Niu and W. Zhang contributed equally to this work. 7 pages, 5 figures

Journal ref: Phys. Rev. Research 2, 023297 (2020)

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Authors: Eoin Griffin, Lucas Mogg, Guang-Ping Hao, Gopinadhan Kalon, Cihan Bacaksiz, Guillermo Lopez-Polin, T. Y. Zhou, Victor Guarochico, Junhao Cai, Christof Neumann, Andreas Winter, Michael Mohn, Jong Hak Lee, Junhao Lin, Ute Kaiser, Irina V. Grigorieva, Kazu Suenaga, Barbaros Ozyilmaz, Hui-Min Cheng, Wencai Ren, Andrey Turchanin, Francois M. Peeters, Andre K. Geim, Marcelo Lozada-Hidalgo

Abstract: Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experi… ▽ More Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies. △ Less

Submitted 20 May, 2020; v1 submitted 19 May, 2020; originally announced May 2020.

Selective Defect Formation in Hexagonal Boron Nitride

Authors: Irfan H. Abidi, Noah Mendelson, Toan Trong Tran, Abhishek Tyagi, Minghao Zhuang, Lu-Tao Weng, Barbaros Ozyilmaz, Igor Aharonovich, Milos Toth, Zhengtang Luo

Abstract: Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabr… ▽ More Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabricate hBN single photon emitters (SPEs) with desired emission properties in two isolated spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (APCVD)--a process we term gettering. Using the gettering technique we deterministically place the resulting zero-phonon line (ZPL) between the regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with tailored emission properties across a broad spectral range. Our ability to control defect formation during hBN growth provides a simple and cost-effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide range of applications. Our results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies. △ Less

Submitted 24 February, 2019; v1 submitted 21 February, 2019; originally announced February 2019.

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Authors: Ahmet Avsar, Jun Y. Tan, Luo Xin, Khoong Hong Khoo, Yuting Yeo, Kenji Watanabe, Takashi Taniguchi, Su Ying Quek, Barbaros Ozyilmaz

Abstract: Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping and contact resistance are not well known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts. In shar… ▽ More Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping and contact resistance are not well known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts. In sharp contrast to directly Co contacted p-type BP devices, we observe strong n-type conduction upon insertion of the h-BN at the Co/BP interface. First principles calculations show that this difference arises from the much larger interface dipole at the Co/h-BN interface compared to the Co/BP interface, which reduces the work function of the Co/h-BN contact. The Co/h-BN contacts exhibit low contact resistances (~ 4.5 k-ohm), and are Schottky barrier free. This allows us to probe high electron mobilities (4,200 cm2/Vs) and observe insulator-metal transitions even under two-terminal measurement geometry. △ Less

Submitted 17 August, 2017; originally announced August 2017.

Journal ref: Nano Letters, August 9, 2017

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Authors: Ahmet Avsar, Jun You Tan, Marcin Kurpas, Martin Gmitra, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Barbaros Ozyilmaz

Abstract: Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D… ▽ More Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 um. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect. △ Less

Submitted 7 June, 2017; originally announced June 2017.

Optospintronics in graphene via proximity coupling

Authors: Ahmet Avsar, Dmitrii Unuchek, Jiawei Liu, Oriol Lopez Sanchez, Kenji Watanabe, Takashi Taniguchi, Barbaros Ozyilmaz, Andras Kis

Abstract: The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive dire… ▽ More The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphenes intrinsically low spin orbit coupling strength and optical absorption place an obstacle in their realization. We overcome this challenge by creating sharp artificial interfaces between graphene and WSe2 monolayers. Application of a circularly polarized light activates the spin polarized charge carriers in the WSe2 layer due to its spin coupled valley selective absorption. These carriers diffuse into the superjacent graphene layer, transport over a 3.5 um distance, and are finally detected electrically using BN/Co contacts in a non local geometry. Polarization dependent measurements confirm the spin origin of the non local signal. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Journal ref: ACS Nano, 2017

Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au

Authors: E. C. T. O'Farrell, J. Y. Tan, Y. Yeo, G. K. W. Koon, K. Watanabe, T. Taniguchi, B. Özyilmaz

Abstract: We intercalate a van der Waals heterostructure of graphene and hexagonal Boron Nitride with Au, by encapsulation, and show that Au at the interface is two dimensional. A charge transfer upon current annealing indicates redistribution of Au and induces splitting of the graphene bandstructure. The effect of in plane magnetic field confirms that splitting is due to spin-splitting and that spin polari… ▽ More We intercalate a van der Waals heterostructure of graphene and hexagonal Boron Nitride with Au, by encapsulation, and show that Au at the interface is two dimensional. A charge transfer upon current annealing indicates redistribution of Au and induces splitting of the graphene bandstructure. The effect of in plane magnetic field confirms that splitting is due to spin-splitting and that spin polarization is in the plane, characteristic of a Rashba interaction with magnitude approximately 25 meV. Consistent with the presence of intrinsic interfacial electric field we show that the splitting can be enhanced by an applied displacement field in dual gated samples. Giant negative magnetoresistance, up to 75%, and a field induced anomalous Hall effect at magnetic fields < 1 T are observed. These demonstrate that hybridized Au has a magnetic moment and suggests the proximity to formation of a collective magnetic phase. These effects persist close to room temperature. △ Less

Submitted 23 July, 2016; originally announced July 2016.

Controlling many-body states by the electric-field effect in a two-dimensional material

Authors: Linjun Li, Eoin C. T. O Farrell, Kianping Loh, Goki Eda, Barbaros Ozyilmaz, Antonio H. Castro Neto

Abstract: To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material… ▽ More To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material must be thin enough to avoid shielding of the electric field in bulk material. Two-dimensional materials do not experience electrical screening, and their charge carrier density can be controlled by gating. 1T TiSe2 is a prototypical 2D material that shows charge density wave(CDW) and superconductivity in its phase diagram, presenting several similarities with other layered systems such as copper oxides, iron pnictides, crystals of rare-earth and actinide atoms. By studying 1T TiSe2 single crystals with thicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boron nitride, we achieve unprecedented control over the CDW transition temperature, tuned from 170 K to 40 K, and over the superconductivity transition temperature, tuned from a quantum critical point at 0 K up to 3 K. Electrically driving TiSe2 over different ordered electronic phases allows us to study the details of the phase transitions between many-body states. Observations of periodic oscillations of magnetoresistance induced by the Little Parks effect show that the appearance of superconductivity is directly correlated to the spatial texturing of the amplitude and phase of the superconductivity order parameter, corresponding to a 2D matrix of superconductivity. We infer that this superconductivity matrix is supported by a matrix of incommensurate CDW states embedded in the commensurate CDW states. Our results show that spatially modulated electronic states are fundamental to the appearance of 2D superconductivity. △ Less

Submitted 15 July, 2016; originally announced July 2016.

Comments: 22 pages, 10 figures

Journal ref: Nature 529,185 (2016)

Electronic Spin Transport in Dual-Gated Bilayer Graphene

Authors: Ahmet Avsar, Ivan Jesus Vera-Marun, Jun You Tan, Gavin Kok Wai Koon, Kenji Watanabe, Takashi Taniguchi, Shaffique Adam, Barbaros Ozyilmaz

Abstract: The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin… ▽ More The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel. △ Less

Submitted 21 July, 2016; v1 submitted 25 February, 2016; originally announced February 2016.

Journal ref: NPG Asia Materials 8, e274 (Mar 2016)

Enhanced spin-orbit coupling in dilute fluorinated graphene

Authors: Ahmet Avsar, Jong Hak Lee, Gavin Kok Wai Koon, Barbaros Ozyilmaz

Abstract: The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible to be used as an active element in future electric field controlled spintronics devices. This stimulates the development of a systematic method for extrinsical… ▽ More The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible to be used as an active element in future electric field controlled spintronics devices. This stimulates the development of a systematic method for extrinsically enhancing the SOC of graphene. In this letter, we study the strength of SOC in weakly fluorinated graphene devices. We observe high non-local signals even without applying any external magnetic field. The magnitude of the signal increases with increasing fluorine adatom coverage. From the length dependence of the non-local transport measurements, we obtain SOC values of ~ 5.1 meV and ~ 9.1 meV for the devices with ~ 0.005% and ~ 0.06% fluorination, respectively. Such a large enhancement, together with the high charge mobility of fluorinated samples (u~4300 cm2/Vs - 2700 cm2/Vs), enables the detection of the spin Hall effect even at room temperature. △ Less

Submitted 2 December, 2015; originally announced December 2015.

Comments: 15 pages, 3 figures, 1 table

Journal ref: 2D Mater.2, 044009, 2015

Large Frequency Change with Thickness in Interlayer Breathing Mode - Significant Interlayer Interactions in Few Layer Black Phosphorus

Authors: Xin Luo, Xin Lu, Gavin Kok Wai Koon, Antonio H. Castro Neto, Barbaros Özyilmaz, Qihua Xiong, Su Ying Quek

Abstract: Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon prope… ▽ More Bulk black phosphorus (BP) consists of puckered layers of phosphorus atoms. Few-layer BP, obtained from bulk BP by exfoliation, is an emerging candidate as a channel material in post-silicon electronics. A deep understanding of its physical properties and its full range of applications are still being uncovered. In this paper, we present a theoretical and experimental investigation of phonon properties in few-layer BP, focusing on the low-frequency regime corresponding to interlayer vibrational modes. We show that the interlayer breathing mode A3g shows a large redshift with increasing thickness; the experimental and theoretical results agreeing well. This thickness dependence is two times larger than that in the chalcogenide materials such as few-layer MoS2 and WSe2, because of the significantly larger interlayer force constant and smaller atomic mass in BP. The derived interlayer out-of-plane force constant is about 50% larger than that in graphene and MoS2. We show that this large interlayer force constant arises from the sizable covalent interaction between phosphorus atoms in adjacent layers, and that interlayer interactions are not merely of the weak van der Waals type. These significant interlayer interactions are consistent with the known surface reactivity of BP, and have been shown to be important for electric-field induced formation of Dirac cones in thin film BP. △ Less

Submitted 12 May, 2015; originally announced May 2015.

Comments: Nano Letters, 2015

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Authors: H. Schmidt, I. Yudhistira, L. Chu, A. H. Castro Neto, B. Oezyilmaz, S. Adam, G. Eda

Abstract: Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observatio… ▽ More Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism. △ Less

Submitted 21 July, 2015; v1 submitted 2 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 046803 (2016)

Conductance oscillations induced by ballistic snake states in a graphene heterojunction

Authors: Thiti Taychatanapat, Jun You Tan, Yuting Yeo, Kenji Watanabe, Takashi Taniguchi, Barbaros Özyilmaz

Abstract: The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as quantum Hall effect in bipolar regime, Klein tunneling, and Fabry-Pérot interferences all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have b… ▽ More The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as quantum Hall effect in bipolar regime, Klein tunneling, and Fabry-Pérot interferences all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have been predicted to induce conductance oscillations, manifesting their twisting nature. However, transport studies along p-n junctions have so far only been performed in low mobility devices. Here, we report the observation of conductance oscillations due to ballistic snake states along a p-n interface in high quality graphene encapsulated by hexagonal boron nitride. These snake states are exceptionally robust as they can propagate over $12$~$μ$m, limited only by the size of our sample, and survive up to at least $120$~K. The ability to guide carriers over a long distance provide a crucial building block for graphene-based electron optics. △ Less

Submitted 9 February, 2015; originally announced February 2015.

Comments: 7 pages, 3 figures

Journal ref: Nat. Commun. 6:6093 (2014)

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere

Authors: Rostislav A. Doganov, Eoin C. T. O'Farrell, Steven P. Koenig, Yuting Yeo, Angelo Ziletti, Alexandra Carvalho, David K. Campbell, David F. Coker, Kenji Watanabe, Takashi Taniguchi, Antonio H. Castro Neto, Barbaros Özyilmaz

Abstract: Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two… ▽ More Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two dimensional electronic material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical transport properties and to enable future application of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride crystals can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole trans-conductance characteristics. We attribute these results to the formation of oxygen acceptor states in air-exposed samples which drastically perturb the band structure in comparison to the pristine passivated black phosphorus. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Authors: Ahmet Avsar, Ivan J. Vera-Marun, Tan Jun You, Kenji Watanabe, Takashi Taniguchi, Antonio Helio Castro Neto, Barbaros Ozyilmaz

Abstract: The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation p… ▽ More The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation problems which have limited their potential for applications. Introducing monolayer graphene in our device architecture for one-atom-thick conformal source-drain electrodes enables a chemically inert boron nitride dielectric to tightly seal the black phosphorus surface. This architecture, generally applicable for other sensitive two-dimensional crystals, results in stable transport characteristics which are hysteresis free and identical both under high vacuum and ambient conditions. Remarkably, our graphene electrodes lead to contacts not dominated by thermionic emission, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field effect transistor geometry. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Spin-Orbit Proximity Effect in Graphene

Authors: Ahmet Avsar, Jun You Tan, Jayakumar Balakrishnan, Gavin Kok Wai Koon, Jayeeta Lahiri, Alexandra Carvalho, Aleksandr Rodin, Thiti Taychatanapat, Eoin OFarrell, Goki Eda, Antonio Helio Castro Neto, Barbaros Ozyilmaz

Abstract: The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of… ▽ More The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of graphene. In this work, we create an artificial interface between monolayer graphene and few-layers semiconducting tungsten disulfide (WS2). We show that in such devices graphene acquires a SOC as high as 17meV, three orders of magnitude higher than its intrinsic value, without modifying any of the structural properties of the graphene. Such proximity SOC leads to the spin Hall effect even at room temperature and opens the doors for spin FETs. We show that intrinsic defects in WS2 play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Journal ref: Nature Communications, 5, 4875 (2014)

Dynamical spin injection at a quasi-one-dimensional ferromagnet-graphene interface

Authors: S. Singh, A. Ahmadi, C. T. Cherian, E. R. Mucciolo, E. del Barco, B. Özyilmaz

Abstract: We present a study of dynamical spin injection from a three-dimensional ferromagnet into two-dimensional single-layer graphene. Comparative ferromagnetic resonance (FMR) studies of ferromagnet/graphene strips buried underneath the central line of a coplanar waveguide show that the FMR linewidth broadening is the largest when the graphene layer protrudes laterally away from the ferromagnetic strip,… ▽ More We present a study of dynamical spin injection from a three-dimensional ferromagnet into two-dimensional single-layer graphene. Comparative ferromagnetic resonance (FMR) studies of ferromagnet/graphene strips buried underneath the central line of a coplanar waveguide show that the FMR linewidth broadening is the largest when the graphene layer protrudes laterally away from the ferromagnetic strip, indicating that the spin current is injected into the graphene areas away from the area directly underneath the ferromagnet being excited. Our results confirm that the observed damping is indeed a signature of dynamical spin injection, wherein a pure spin current is pumped into the single-layer graphene from the precessing magnetization of the ferromagnet. The observed spin pumping efficiency is difficult to reconcile with the expected backflow of spins according to the standard spin pumping theory and the characteristics of graphene, and constitutes an enigma for spin pumping in two-dimensional structures. △ Less

Submitted 23 January, 2015; v1 submitted 19 November, 2014; originally announced November 2014.

Journal ref: Appl. Phys. Lett. 106, 032411 (2015)

Direct dry transfer of chemical vapor deposition graphene to polymeric substrates

Authors: Guilhermino J. M. Fechine, Inigo Martin-Fernandez, George Yiapanis, Ricardo V. Bof de Oliveira, Xiao Hu, Irene Yarovsky, Antonio H. Castro Neto, Barbaros Ozyilmaz

Abstract: We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interact… ▽ More We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interactions, rheological tests and graphene transfer at various experimental conditions show that controlling the graphene-polymer interface is the key to controlling graphene transfer. Raman spectroscopy and Optical Microscopy were used to identify and quantify graphene transferred to the polymer substrates. The results showed that the amount of graphene transferred to the polymer, from no-graphene to full graphene transfers, can be achieved by fine tuning the transfer conditions. As a result of the direct dry transfer technique, the graphene-polymer adhesion being stronger than graphene to Si/SiO2 wafer. △ Less

Submitted 17 October, 2014; originally announced October 2014.

Comments: 23 pages, 7 figures, 1 table

Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

Authors: Jing Wu, Hennrik Schmidt, Amara Kiran Kumar, Xiangfan Xu, Goki Eda, Barbaros Özyilmaz

Abstract: Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is mo… ▽ More Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Micro-fabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ~30 mV/K at room temperature are observed, which are much larger than those observed in other two dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S~T^1/3 suggesting a two-dimensional variable range hopping mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application. △ Less

Submitted 9 July, 2014; originally announced July 2014.

Comments: 21 pages + 11 pages supporting information

Journal ref: Nano Letters 14 (5), 2730 (2014)

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

Authors: Leiqiang Chu, Hennrik Schmidt, Jiang Pu, Shunfeng Wang, Barbaros Özyilmaz, Taishi Takenobu, Goki Eda

Abstract: Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a comb… ▽ More Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate which allows us to achieve high charge carrier (>10^13) density. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities of as low as 1 kΩ for monolayer and 420Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm^2 for all devices studied. Temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures. △ Less

Submitted 9 July, 2014; originally announced July 2014.

Comments: 25 pages

Journal ref: Scientific Reports 4, 7293 (2014)

Electronic transport in graphene-based heterostructures

Authors: J. Y. Tan, A. Avsar, J. Balakrishnan, G. K. W. Koon, T. Taychatanapat, E. C. T. O Farrell, K. Watanabe, T. Taniguchi, G. Eda, A. H. Castro Neto, B. Ozyilmaz

Abstract: While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybden… ▽ More While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis show that these crystals have improved surface roughness (root mean square (rms) value of only ~ 0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (~ 38,000 cm2/Vs at RT), followed by G/MoS2 (~ 10,000 cm2/Vs) and G/GaSe (~ 2,200 cm2/Vs). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate. △ Less

Submitted 10 June, 2014; originally announced June 2014.

Comments: 15 pages, 3 figures

Journal ref: Applied Physics Letters, 104, 183504 (2014)

Length-dependent thermal conductivity in suspended single-layer graphene

Authors: Xiangfan Xu, Luiz F. C. Pereira, Yu Wang, Jing Wu, Kaiwen Zhang, Xiangming Zhao, Sukang Bae, Cong Tinh Bui, Rongguo Xie, John T. L. Thong, Byung Hee Hong, Kian Ping Loh, Davide Donadio, Baowen Li, Barbaros Özyilmaz

Abstract: Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report e… ▽ More Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report experimental measurements and non-equilibrium molecular dynamics simulations of thermal conduction in suspended single layer graphene as a function of both temperature and sample length. Interestingly and in contrast to bulk materials, when temperature at 300K, thermal conductivity keeps increasing and remains logarithmic divergence with sample length even for sample lengths much larger than the average phonon mean free path. This result is a consequence of the two-dimensional nature of phonons in graphene and provides fundamental understanding into thermal transport in two-dimensional materials. △ Less

Submitted 22 April, 2014; originally announced April 2014.

Comments: 36 pages,11 figures

Journal ref: Nat. Commun. 5, 3689 (2014)

Scattering theory of spin-orbit active adatoms on graphene

Authors: Alexandre Pachoud, Aires Ferreira, B. Özyilmaz, A. H. Castro Neto

Abstract: The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is theoretically investigated. The hybridization between graphene and the adatoms' orbitals lifts spin and valley degeneracies of the pristine host material, giving rise to rich spin-orbit coupling mechanisms with features de… ▽ More The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is theoretically investigated. The hybridization between graphene and the adatoms' orbitals lifts spin and valley degeneracies of the pristine host material, giving rise to rich spin-orbit coupling mechanisms with features determined by the exact adsorption position on the honeycomb lattice - bridge, hollow or top position - and the adatoms' outer-shell orbital type. Effective graphene-only Hamiltonians are derived from symmetry considerations, while a microscopic tight-binding approach connects effective low-energy couplings and graphene-adatom hybridization parameters. Within the $T$-matrix formalism, a theory for (spin-dependent) scattering events involving graphene's charge carriers, and the spin-orbit active adatoms is developed. Spin currents associated with intravalley and intervalley scattering are found to tend to oppose each other. We establish that under certain conditions, hollow-position adatoms give rise to the spin Hall effect, through skew scattering, while top-position adatoms induce transverse charge currents via trigonal potential scattering. We also identify the critical Fermi energy range where the spin Hall effect is dramatically enhanced, and the associated transverse spin currents can be reversed. △ Less

Submitted 20 August, 2014; v1 submitted 5 March, 2014; originally announced March 2014.

Comments: 19 pages, 9 figures. Published version: minor text revisions + new references added

Journal ref: Phys. Rev. B 90, 035444 (2014)

Electric field effect in ultrathin black phosphorus

Authors: Steven P. Koenig, Rostislav A. Doganov, Hennrik Schmidt, A. H. Castro Neto, Barbaros Oezyilmaz

Abstract: Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/V… ▽ More Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/Vs and drain current modulation of over 10$^3$. At low temperatures the on-off ratio exceeds 10$^5$ and the device exhibits both electron and hole conduction. Using atomic force microscopy we observe significant surface roughening of thin black phosphorus crystals over the course of 1 hour after exfoliation. △ Less

Submitted 23 February, 2014; originally announced February 2014.

Comments: Accepted to Applied Physics Letters, 12 pages, 3 figures

Transport properties of monolayer MoS$_2$ grown by chemical vapour deposition

Authors: Hennrik Schmidt, Shunfeng Wang, Leiqiang Chu, Minglin Toh, Rajeev Kumar, Weijie Zhao, Antonio H. Castro Neto, Jens Martin, Shaffique Adam, Barbaros Oezyilmaz, Goki Eda

Abstract: Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS$_2$. The devices show low temperature mobilities up to 500 cm$^2$V… ▽ More Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS$_2$. The devices show low temperature mobilities up to 500 cm$^2$V$^{-1}$s$^{-1}$ and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show, that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of phonons as a limiting factor of these devices is discussed. △ Less

Submitted 6 January, 2014; originally announced January 2014.

Comments: Main text: 5 pages, 4 figures; Supplementary Information: 4 pages, 10 figures

Journal ref: Nano Letters, 14, 1909 (2014)

Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Authors: Guang-Xin Ni, Hong-Zhi Yang, Wei Ji, Seung-Jae Baeck, Chee-Tat Toh, Jong-Hyun Ahn, Vitor M. Pereira, Barbaros Özyilmaz

Abstract: Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene, opening the prospect for atomically thin optical elements. Indeed, graphene is currently one of the notable players in the intense drive towards bendable, thin, a… ▽ More Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene, opening the prospect for atomically thin optical elements. Indeed, graphene is currently one of the notable players in the intense drive towards bendable, thin, and portable electronic displays, where its intrinsically metallic, optically transparent, and mechanically robust nature are major advantages. Given that the intrinsic transparency of a graphene monolayer is 97.7 %, any small, reproducible, controllable, and potentially reversible modulation of transparency can have a significant impact for graphene as a viable transparent conducting electrode. Even more so, if the degree of modulation is polarization dependent. Here we show that the transparency in the visible range of graphene pre-strained on a Polyethylene terephthalate (PET) substrate exhibits a periodic modulation (0.1 %) as a function of polarization direction, which we interpret as strain-induced optical anisotropy. The degree of anisotropy is varied by reversible external manipulation of the level of pre-strain. The magnitude of strain is monitored independently by optical absorption and Raman spectroscopy, and the experimental observations are consistent with the theoretically expected modification of the optical conductivity of graphene arising from the strain-induced changes in the electronic dispersion of graphene. The strain sensitivity of the optical response of graphene demonstrated in this study can be potentially utilized towards novel ultra-thin optical devices and strain sensing applications. △ Less

Submitted 29 December, 2013; originally announced December 2013.

Comments: 18 pages, 4 figures

An innovative way of etching MoS2: Characterization and mechanistic investigation

Authors: Yuan Huang, Jing Wu, Xiangfan Xu, Yuda Ho, Guangxin Ni, Qiang Zou, Gavin Kok Wai Koon, Weijie Zhao, A. H. Castro Neto, Goki Eda, Chengmin Shen, Barbaros Özyilmaz

Abstract: We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be… ▽ More We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals. △ Less

Submitted 1 March, 2013; originally announced March 2013.

Comments: 22 pages, 9 figures

Journal ref: Nano Research 2013

Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport

Authors: Guang-Xin Ni, Yi Zheng, Sukang Bae, Hye Ri Kim, Alexandre Pachoud, Young Soo Kim, Chang-Ling Tan, Danho Im, Jong-Hyun Ahn, Byung Hee Hong, Barbaros Özyilmaz

Abstract: The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While… ▽ More The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process. △ Less

Submitted 6 February, 2013; originally announced February 2013.

Comments: 17 pages, 4 figures

Journal ref: ACS Nano 6 (2012) 1158-1164

Graphene-Ferroelectric Hybrid Structure for Flexible Transparent Electrodes

Authors: Guang-Xin Ni, Yi Zheng, Sukang Bae, Chin Yaw Tan, Orhan Kahya, Jing Wu, Byung Hee Hong, Kui Yao, Barbaros Özyilmaz

Abstract: Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance of graphene is a major constrain for many of these applications. Here we propose a new approach to achieve low sheet resistance in large-scale CVD monolayer grap… ▽ More Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance of graphene is a major constrain for many of these applications. Here we propose a new approach to achieve low sheet resistance in large-scale CVD monolayer graphene using non-volatile ferroelectric polymer gating. In this hybrid structure, large-scale graphene is heavily doped up to 3{\times}1013 cm-2 by non-volatile ferroelectric dipoles, yielding a low sheet resistance of 120 Ω{\Box} at ambient conditions. The graphene-ferroelectric transparent conductors (GFeTCs) exhibit more than 95% transmittance from the visible to the near infrared range owing to the highly transparent nature of the ferroelectric polymer. Together with its excellent mechanical flexibility, chemical inertness and the simple fabrication process of ferroelectric polymers, the proposed GFeTCs represent a new route towards large-scale graphene based transparent electrodes and optoelectronics. △ Less

Submitted 5 February, 2013; originally announced February 2013.

Comments: 20 pages, 6 figures

Journal ref: ACS Nano 6 (2012) 3935-3942

Dynamic Spin Injection into Chemical Vapor Deposited Graphene

Authors: A. K. Patra, S. Singh, B. Barin, Y. Lee, J. -H. Ahn, E. del Barco, E. R. Mucciolo, B. Özyilmaz

Abstract: We demonstrate dynamic spin injection into chemical vapor deposition (CVD) grown graphene by spin pumping from permalloy (Py) layers. Ferromagnetic resonance measurements at room temperature reveal a strong enhancement of the Gilbert damping at the Py/graphene interface, exceeding that observed in even Py/platinum interfaces. Similar results are also shown on Co/graphene layers. This enhancement i… ▽ More We demonstrate dynamic spin injection into chemical vapor deposition (CVD) grown graphene by spin pumping from permalloy (Py) layers. Ferromagnetic resonance measurements at room temperature reveal a strong enhancement of the Gilbert damping at the Py/graphene interface, exceeding that observed in even Py/platinum interfaces. Similar results are also shown on Co/graphene layers. This enhancement in the Gilbert damping is understood as the consequence of spin pumping at the interface driven by magnetization dynamics. Our observations suggest a strong enhancement of spin-orbit coupling in CVD graphene, in agreement with earlier spin valve measurements. △ Less

Submitted 2 November, 2012; originally announced November 2012.

Comments: 13 pages and 3 figures

Journal ref: Appl. Phys. Lett. 101, 162407 (2012)

Frequency domain studies of current-induced magnetization dynamics in single magnetic-layer nanopillars

Authors: N. Müsgens, S. Fahrendorf, T. Maassen, A. Heiss, J. Mayer, B. Özyilmaz, B. Beschoten, G. Güntherodt

Abstract: Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corrobor… ▽ More Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corroborate recent model predictions. The observed narrow linewidth of 4 MHz at room temperature indicates the high coherence of the magnetic excitations. △ Less

Submitted 11 January, 2012; originally announced January 2012.

Comments: 10 pages, 3 fihures

Graphene for Controlled and Accelerated Osteogenic Differentiation of Human Mesenchymal Stem Cells

Authors: Tapas R. Nayak, Henrik Andersen, Venkata S. Makam, Clement Khaw, Sukang Bae, Xiangfan Xu, Pui-Lai R. Ee, Jong-Hyun Ahn, Byung Hee Hong, Giorgia Pastorin, Barbaros Özyilmaz

Abstract: Modern tissue engineering strategies combine living cells and scaffold materials to develop biological substitutes that can restore tissue functions. Both natural and synthetic materials have been fabricated for transplantation of stem cells and their specific differentiation into muscles, bones and cartilages. One of the key objectives for bone regeneration therapy to be successful is to direct s… ▽ More Modern tissue engineering strategies combine living cells and scaffold materials to develop biological substitutes that can restore tissue functions. Both natural and synthetic materials have been fabricated for transplantation of stem cells and their specific differentiation into muscles, bones and cartilages. One of the key objectives for bone regeneration therapy to be successful is to direct stem cells' proliferation and to accelerate their differentiation in a controlled manner through the use of growth factors and osteogenic inducers. Here we show that graphene provides a promising biocompatible scaffold that does not hamper the proliferation of human mesenchymal stem cells (hMSCs) and accelerates their specific differentiation into bone cells. The differentiation rate is comparable to the one achieved with common growth factors, demonstrating graphene's potential for stem cell research. △ Less

Submitted 29 June, 2011; v1 submitted 27 April, 2011; originally announced April 2011.

Comments: 34 pages, 11 figures, 1 table, submitted

Journal ref: ACS Nano 5, 4670-4678 (2011)

Towards wafer scale fabrication of graphene based spin valve devices

Authors: Ahmet Avsar, Tsung-Yeh Yang, Su-Kang Bae, Jayakumar Balakrishnan, Frank Volmer, Manu Jaiswal, Zheng Yi, Syed Rizwan Ali, Gernot Güntherodt, Byung-Hee Hong, Bernd Beschoten, Barbaros Özyilmaz

Abstract: We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain bou… ▽ More We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer (SLG) and bilayer graphene (BLG). We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that CVD specific structural differences such as nano-ripples and grain boundaries do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications. △ Less

Submitted 25 April, 2011; originally announced April 2011.

Comments: 23 pages, 7 figures

Journal ref: Nano Letters 11, 2363 (2011)

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Authors: Yi Zheng, Guang-Xin Ni, Sukang Bae, Chun-Xiao Cong, Orhan Kahya, Chee-Tat Toh, Hye Ri Kim, Danho Im, Ting Yu, Jong Hyun Ahn, Byung Hee Hong, Barbaros Ozyilmaz

Abstract: Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and func… ▽ More Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within $\pm1$ V with maximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. △ Less

Submitted 6 January, 2011; originally announced January 2011.

Comments: 4 pages, 3 figures; EPL 2011; In press

Journal ref: EPL, 93, 17002(2011)

Phonon Transport in Suspended Single Layer Graphene

Authors: Xiangfan Xu, Yu Wang, Kaiwen Zhang, Xiangming Zhao, Sukang Bae, Martin Heinrich, Cong Tinh Bui, Rongguo Xie, John T. L. Thong, Byung Hee Hong, Kian Ping Loh, Baowen Li, Barbaros Oezyilmaz

Abstract: We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $σ$/A increases with temperature and exhibits a peak near T~280K ($\pm$10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conduct… ▽ More We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $σ$/A increases with temperature and exhibits a peak near T~280K ($\pm$10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conductivity scales as ~T^{1.5}, suggesting that the main contribution to thermal conductance arises from flexural acoustic (ZA) phonons in suspended SLG. The $σ$/A reaches a high value of 1.7$\times10^5 T^{1.5}$ W/m^2K, which is approaching the expected ballistic phonon thermal conductance for two-dimensional graphene sheets. Our results not only clarify the ambiguity in the thermal conductance, but also demonstrate the potential of Cu-CVD graphene for heat related applications. △ Less

Submitted 14 December, 2010; originally announced December 2010.

Comments: 4pages, 4 figures

Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature

Authors: T. -Y. Yang, J. Balakrishnan, F. Volmer, A. Avsar, M. Jaiswal, J. Samm, S. R. Ali, A. Pachoud, M. Zeng, M. Popinciuc, G. Güntherodt, B. Beschoten, B. Özyilmaz

Abstract: We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of… ▽ More We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of up to 2 ns are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the density dependence of $τ_s$ are observed as a function of temperature. △ Less

Submitted 20 June, 2011; v1 submitted 6 December, 2010; originally announced December 2010.

Comments: 19 pages, 7 figures, includes supplementary information, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 107, 047206 (2011)

Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

Authors: Alexandre Pachoud, Manu Jaiswal, Priscilla Kailian Ang, Kian Ping Loh, Barbaros Oezyilmaz

Abstract: We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneise… ▽ More We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 $\times10^{13}/cm^{2}$), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 $\times10^{13}/cm^{2}$, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate. △ Less

Submitted 29 October, 2010; v1 submitted 17 September, 2010; originally announced September 2010.

Comments: 13 pages, 4 figures, Published Version

Journal ref: EPL (Europhysics Letters), 92, 27001, (2010)

Graphene field effect transistors with ferroelectric gating

Authors: Yi Zheng, Guang-Xin Ni, Chee-Tat Toh, Chin-Yaw Tan, Kui Yao, Barbaros Ozyilmaz

Abstract: Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent backg… ▽ More Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (nBG) provided by normal dielectric gating. More importantly, we prove that nBG can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric FETs with resistance change over 500% and reproducible no-volatile switching over 10^5 cycles. △ Less

Submitted 31 August, 2010; originally announced September 2010.

Comments: 5 Pages; 4 figures; two column format

Journal ref: Phys. Rev. Lett. 105, 166602 (2010)

Transport properties of graphene with one-dimensional charge defects

Authors: A. Ferreira, Xiangfan Xu, Chang-Lin Tan, Sukang Bae, N. M. R. Peres, Byung-Hee Hong, Barbaros Ozyilmaz, A. H. Castro Neto

Abstract: We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these mat… ▽ More We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials. △ Less

Submitted 14 April, 2011; v1 submitted 3 August, 2010; originally announced August 2010.

Comments: 6 pages, 5 figures. published version: one figure, appendix and references added

Journal ref: EPL 94, 28003 (2011)

30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes

Authors: Sukang Bae, Hyeong Keun Kim, Youngbin Lee, Xianfang Xu, Jae-Sung Park, Yi Zheng, Jayakumar Balakrishnan, Danho Im, Tian Lei, Young Il Song, Young Jin Kim, Kwang S. Kim, Barbaros Özyilmaz, Jong-Hyun Ahn, Byung Hee Hong, Sumio Iijima

Abstract: We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO).… ▽ More We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances. △ Less

Submitted 16 March, 2010; v1 submitted 30 December, 2009; originally announced December 2009.

Journal ref: Nature Nanotech. Advance Online Publication (2010)

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

Authors: Dong-Keun Ki, Seung-Geol Nam, Hu-Jong Lee, Barbaros Oezyilmaz

Abstract: By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused… ▽ More By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system. △ Less

Submitted 14 December, 2009; originally announced December 2009.

Comments: 5 pages, 4 figures, will be published in PRB

Gate-controlled non-volatile graphene-ferroelectric memory

Authors: Yi Zheng, Guang-Xin Ni, Chee-Tat Toh, Ming-Gang Zeng, Shu-Ting Chen, Kui Yao, Barbaros Ozyilmaz

Abstract: In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A non-volatile resistance change exceeding 200% i… ▽ More In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A non-volatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface. △ Less

Submitted 23 April, 2009; v1 submitted 8 April, 2009; originally announced April 2009.

Comments: 4 papes, 4 figures

Journal ref: Appl. Phys. Lett. 94, 163505 (2009)

Geometrical control of the magnetization direction in high aspect-ratio PdNi ferromagnetic nano-electrodes

Authors: J. J. Gonzalez-Pons, J. J. Henderson, E. del Barco, B. Ozyilmaz

Abstract: We present a study of electron-beam evaporated Pd0.4Ni0.6 alloy thin films by means of ferromagnetic resonance measurements on extended films of varying thickness and anisotropic magnetoresistance measurements of lithographically patterned high aspect-ratio ferromagnetic electrodes, respectively. The results reveal that the direction of the magnetization strongly depends on the electrode lateral… ▽ More We present a study of electron-beam evaporated Pd0.4Ni0.6 alloy thin films by means of ferromagnetic resonance measurements on extended films of varying thickness and anisotropic magnetoresistance measurements of lithographically patterned high aspect-ratio ferromagnetic electrodes, respectively. The results reveal that the direction of the magnetization strongly depends on the electrode lateral dimensions, transitioning from in-plane magnetization for extended films to out-of-the-plane magnetization for electrode widths below 2-3 microns, reaching 58 degrees off-plane for 100 nm-wide nanoelectrodes. △ Less

Submitted 10 June, 2008; originally announced June 2008.

Comments: Preprint submitted to PRB (14 pages, 4 figures)

Electronic transport in locally gated graphene nanoconstrictions

Authors: Barbaros Özyilmaz, Pablo Jarillo-Herrero, Dmitri Efetov, Philip Kim

Abstract: We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with local tunable transmission and characterized their electronic properties. An order of magnitude enhanced gate efficiency is achieved adopting the local gate geo… ▽ More We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with local tunable transmission and characterized their electronic properties. An order of magnitude enhanced gate efficiency is achieved adopting the local gate geometry with thin dielectric gate oxide. A complete turn off of the device is demonstrated as a function of the local gate voltage. Such strong suppression of device conductance was found to be due to both quantum confinement and Coulomb blockade effects in the constricted graphene nanostructures. △ Less

Submitted 11 September, 2007; originally announced September 2007.

Comments: 3 pages 3 figures; separated and expanded from arXiv:0705.3044v1

Journal ref: Appl. Phys. Lett. 91, 192107 (2007)

Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction

Authors: Barbaros Özyilmaz, Pablo Jarillo-Herrero, Dmitri Efetov, Dmitri A. Abanin, Leonid S. Levitov, Philip Kim

Abstract: We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the l… ▽ More We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the $p$ and $n$ regions. These fractional plateaus, originating from chiral edge states equilibration at the $p$-$n$ interfaces, exhibit sensitivity to inter-edge backscattering which is found to be strong for some of the plateuas and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices. △ Less

Submitted 11 September, 2007; v1 submitted 21 May, 2007; originally announced May 2007.

Comments: 4 pages 4 figures, to appear in Phys. Rev. Lett. Original version arXiv:0705.3044v1 was separated and expanded to this current version and arXiv:0709.1731

Journal ref: Phys. Rev. Lett, 99, 166804 (2007)