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Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells
Authors:
J. Hübner,
S. Kunz,
S. Oertel,
D. Schuh,
M. Pochwała,
H. T. Duc,
J. Förstner,
T. Meier,
M. Oestreich
Abstract:
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure h…
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We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Landé-g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus splitting nor of the asymmetric Zeeman splitting of the hole bands but is a pure higher order effect that exists as well for diamond type lattices. The measurements for various well widths are very well described within 14 x 14 band k.p theory and illustrate that the electron spin is an excellent meter variable to map out the internal -otherwise hidden- symmetries in two dimensional systems. Fourth order perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a qualitative understanding of the observed effects.
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Submitted 7 April, 2011;
originally announced April 2011.
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Electron spin relaxation as evidence of excitons in an electron-hole plasma
Authors:
S. Oertel,
S. Kunz,
D. Schuh,
W. Wegscheider,
J. Hübner,
M. Oestreich
Abstract:
We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over q…
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We exploit the influence of the Coulomb interaction between electrons and holes on the electron spin relaxation in a (110)-GaAs quantum well to unveil excitonic signatures within the many particle electron-hole system. The temperature dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures.
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Submitted 6 April, 2011; v1 submitted 12 March, 2011;
originally announced March 2011.
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Spin-orbit fields in asymmetric (001) quantum wells
Authors:
P. S. Eldridge,
J. Hübner,
S. Oertel,
R. T. Harley,
M. Henini,
M. Oestreich
Abstract:
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction…
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We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction band potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the 'isomorphism' of conduction and valence band potentials in quantum systems where the asymmetry is solely produced by alloy variations.
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Submitted 11 October, 2010;
originally announced October 2010.
