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NMR study of AgInTe$_2$ at normal and high pressure
Authors:
Robin Guehne,
Carsten Kattinger,
Marko Bertmer,
Simon Welzmiller,
Oliver Oeckler,
Jürgen Haase
Abstract:
The ternary semiconductor AgInTe$_2$ is a thermoelectric material with chalcopyrite-type structure that transforms reversibly into a rocksalt-type structure under high pressure. Nuclear magnetic resonance (NMR) is considered to provide unique insight into material properties on interatomic length scales, especially in the context of structural phase transitions. Here, $^{115}$In and $^{125}$Te NMR…
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The ternary semiconductor AgInTe$_2$ is a thermoelectric material with chalcopyrite-type structure that transforms reversibly into a rocksalt-type structure under high pressure. Nuclear magnetic resonance (NMR) is considered to provide unique insight into material properties on interatomic length scales, especially in the context of structural phase transitions. Here, $^{115}$In and $^{125}$Te NMR is used to study AgInTe$_2$ for ambient conditions and pressures up to 5 GPa. Magnetic field dependent and magic angle spinning (MAS) experiments of $^{125}$Te prove strongly enhanced internuclear couplings, as well as a distribution of isotropic chemical shifts suggesting a certain degree of cation disorder. The indirect nuclear coupling is smaller for $^{115}$In, as well as the chemical shift distribution in agreement with the crystal structure. The $^{115}$In NMR is further governed by a small quadrupolar interaction ($ν_\mathrm{Q} \approx$ 90 kHz) and shows an orders of magnitude faster nuclear relaxation in comparison to that of $^{125}$Te. At a pressure of about 3 GPa, the $^{115}$In quadrupole interaction increases sharply to about 2400 kHz, indicating a phase transition to a structure with a well defined, though non-cubic local symmetry, while the $^{115}$In shift suggests no significant changes of the electronic structure. The NMR signal is lost above about 5 GPa (at least up to about 10 GPa). However, upon releasing the pressure a signal is recovered that points to the reported metastable ambient pressure phase with a high degree of disorder.
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Submitted 31 January, 2022;
originally announced January 2022.
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Anomalous Raman Modes in Tellurides
Authors:
F. J. Manjón,
S. Gallego-Parra,
P. Rodríguez-Hernández,
A. Muñoz,
C. Drasar,
V. Muñoz-Sanjosé,
O. Oeckler
Abstract:
Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous b…
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Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous broad bands in tellurides, usually located between 119 and 145 cm-1. They have been attributed to the own sample, to oxidation, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that of graphene, or to the formation of Te precipitates. In this paper, we provide arguments to demonstrate that such bands correspond to clusters or precipitates of trigonal Te in form of nanosize or microsize grains or layers that are segregated either inside or at the surface of the samples. Several mechanisms for Te segregation are discussed and sample heating caused by excessive laser power during Raman scattering measurements is emphasized. Finally, we show that anomalous Raman modes related to Se precipitates also occur in selenides, thus providing a general vision for a better characterization of selenides and tellurides by means of Raman scattering measurements and for a better understanding of chalcogenides in general.
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Submitted 23 February, 2021;
originally announced February 2021.
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Characterization and decomposition of the natural van der Waals heterostructure SnSb2Te4 under compression
Authors:
Juan A. Sans,
Rosario Vilaplana,
E. Lora Da Silva,
Catalin Popescu,
Vanesa P. Cuenca-Gotor,
Adrián Andrada-Chacón,
Javier Sánchez-Benitez,
Oscar Gomis,
André L. J. Pereira,
Plácida Rodríguez-Hernández,
Alfonso Muñoz,
Dominik Daisenberger,
Braulio García-Domene,
Alfredo Segura,
Daniel Errandonea,
Ravhi S. Kumar,
Oliver Oeckler,
Julia Contreras-García,
Francisco J. Manjón
Abstract:
This joint experimental and theoretical study of the structural, vibrational and electrical properties of rhombohedral SnSb2Te4 at high pressure unveils the internal mechanisms of its compression. The equation of state and the internal polyhedral compressibility, the symmetry and behavior of the Raman-active modes and the electrical behavior of this topological insulator under compression have bee…
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This joint experimental and theoretical study of the structural, vibrational and electrical properties of rhombohedral SnSb2Te4 at high pressure unveils the internal mechanisms of its compression. The equation of state and the internal polyhedral compressibility, the symmetry and behavior of the Raman-active modes and the electrical behavior of this topological insulator under compression have been discussed and compared with the parent binary alpha-Sb2Te3 and SnTe compounds and with related ternary compounds. Our X-ray diffraction and Raman measurements together with theoretical calculations, which include topological electron density and electronic localization function analysis, evidence the presence of an isostructural phase transition around 2 GPa and a Fermi resonance around 3.5 GPa. The Raman spectrum of SnSb2Te4 shows vibrational modes that are forbidden in rocksalt SnTe; thus showing a novel way to experimentally observe the forbidden vibrational modes of some compounds. Additionally, since SnSb2Te4 is an incipient metal, like its parent binary compounds, we establish a new criterion to identify the recently proposed metavalent bonding in complex materials when different bond characters coexist in the system. Finally, SnSb2Te4 exhibits a pressure-induced decomposition into the high-pressure phases of its parent binary compounds above 7 GPa, which is supported by an analysis of their formation enthalpies. We have framed the behavior of SnSb2Te4 within the extended orbital radii map of BA2Te4 compounds, which paves the way to understand the pressure behavior and stability ranges of other layered van der Waals-type compounds with similar stoichiometry.
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Submitted 18 July, 2019;
originally announced July 2019.
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Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi$_{2}$Te$_{4}$
Authors:
Alexander Zeugner,
Frederik Nietschke,
Anja U. B. Wolter,
Sebastian Gaß,
Raphael C. Vidal,
Thiago R. F. Peixoto,
Darius Pohl,
Christine Damm,
Axel Lubk,
Richard Hentrich,
Simon K. Moser,
Celso Fornari,
Chul Hee Min,
Sonja Schatz,
Katharina Kißner,
Maximilian Ünzelmann,
Martin Kaiser,
Francesco Scaravaggi,
Bernd Rellinghaus,
Kornelius Nielsch,
Christian Heß,
Bernd Büchner,
Friedrich Reinert,
Hendrik Bentmann,
Oliver Oeckler
, et al. (3 additional authors not shown)
Abstract:
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnB…
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Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 °C) and MnBi$_{2}$Te$_{4}$ (600 °C). Single crystal X-ray diffraction and electron microscopy reveal ubiquitous antisite defects in both cation sites and, possibly, Mn vacancies. Powders of MnBi$_{2}$Te$_{4}$ can be obtained at subsolidus temperatures, and a complementary thermochemical study establishes a limited high-temperature range of phase stability. Nevertheless, quenched powders are stable at room temperature and exhibit long-range antiferromagnetic ordering below 24 K. The expected Mn(II) out-of-plane magnetic state is confirmed by the magnetization, X-ray photoemission, X-ray absorption and linear dichroism data. MnBi$_{2}$Te$_{4}$ exhibits a metallic type of resistivity in the range 4.5-300 K. The compound is an n-type conductor that reaches a thermoelectric figure of merit up to ZT = 0.17. Angle-resolved photoemission experiments provide evidence for a surface state forming a gapped Dirac cone.
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Submitted 7 December, 2018;
originally announced December 2018.
