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Showing 1–6 of 6 results for author: Oberg, L

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  1. arXiv:2405.19140  [pdf

    cond-mat.mes-hall quant-ph

    Identification of defects and the origins of surface noise on hydrogen-terminated (100) diamond

    Authors: Yi-Ying Sung, Lachlan Oberg, Rebecca Griffin, Alex K. Schenk, Henry Chandler, Santiago Corujeira Gallo, Alastair Stacey, Tetiana Sergeieva, Marcus W. Doherty, Cedric Weber, Christopher I. Pakes

    Abstract: Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generat… ▽ More

    Submitted 29 May, 2024; originally announced May 2024.

    Comments: 15 pages, 14 figures, combined manuscript and supporting information

  2. arXiv:2311.09570  [pdf, other

    cond-mat.mtrl-sci

    NV with nitrogen

    Authors: N. B. Manson, M. S. J. Barson, M. Hedges, P. Singh, S. Stearn, Y. Chen, L. Oberg, C. A. Meriles, M. W. Doherty

    Abstract: The paper highlights the difference the properties the nitrogen vacancy centre in bulk diamond containing nitrogen compared to the properties of single centres. Charge transfer between the negative and neutral charge state can occur with a tunnelling of an electron from an adjacent nitrogen atom without involving conduction or valence electrons. This contrasts with charge transfer of single sites.… ▽ More

    Submitted 16 November, 2023; originally announced November 2023.

    Comments: 28 pages with 18 figures

  3. Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

    Authors: YunHeng Chen, Lachlan Oberg, Johannes Flick, Artur Lozovoi, Carlos A. Meriles, Marcus W. Doherty

    Abstract: A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performanc… ▽ More

    Submitted 13 May, 2024; v1 submitted 20 June, 2023; originally announced June 2023.

    Comments: Published version in PRB

    Journal ref: Phys. Rev. B 109, L201115 (2024)

  4. arXiv:2011.12019  [pdf, other

    cond-mat.mes-hall physics.app-ph physics.optics quant-ph

    Nanoscale vector electric field imaging using a single electron spin

    Authors: M. S. J Barson, L. M. Oberg, L. P. McGuinness, A. Denisenko, N. B. Manson, J. Wrachtrup, M. W. Doherty

    Abstract: The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (NV) center in diamond is capable of high-sensitivity electrometry, demonstrations have so far been limited to macroscopic field features or detection of single charges internal to diamond itself. In this work we greatly… ▽ More

    Submitted 24 November, 2020; originally announced November 2020.

  5. arXiv:2011.04921  [pdf, other

    cond-mat.mtrl-sci physics.app-ph

    Nitrogen overgrowth as a catalytic mechanism during diamond chemical vapour deposition

    Authors: Lachlan M. Oberg, Marietta Batzer, Alastair Stacey, Marcus W. Doherty

    Abstract: Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond.… ▽ More

    Submitted 10 November, 2020; originally announced November 2020.

    Comments: main text: 19 pages, 9 figures supplementary: 10 pages, 10 figures

  6. arXiv:1905.07084  [pdf, other

    quant-ph cond-mat.mes-hall

    Spin coherent quantum transport of electrons between defects in diamond

    Authors: Lachlan M Oberg, Eric Huang, Prithvi M Reddy, Audrius Alkauskas, Andrew D Greentree, Jared H Cole, Neil B Manson, Carlos A Meriles, Marcus W Doherty

    Abstract: The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method… ▽ More

    Submitted 16 May, 2019; originally announced May 2019.