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Showing 1–4 of 4 results for author: Oberbeck, L

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  1. STM characterization of the Si-P heterodimer

    Authors: N. J. Curson, S. R. Schofield, M. Y. Simmons, L. Oberbeck, J. L. O'Brien, R. G. Clark

    Abstract: We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ${\sim}$0.002 Langmuirs of PH$_{3}$ results in the adsorption of PH$_{x}$ (x=2,3) onto the surface and some etchin… ▽ More

    Submitted 14 October, 2003; originally announced October 2003.

    Comments: 6 pages, 4 figures (only 72dpi)

    Journal ref: Phys. Rev. B 69, 195303 (2004)

  2. Atomically precise placement of single dopants in Si

    Authors: S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck, R. G. Clark

    Abstract: We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are inc… ▽ More

    Submitted 23 July, 2003; originally announced July 2003.

    Comments: 5 pages, 4 figures

  3. Measurement of phosphorus segregation in silicon at the atomic-scale using STM

    Authors: Lars Oberbeck, Neil J. Curson, Toby Hallam, Michelle Y. Simmons, Robert G. Clark, Gerhard Bilger

    Abstract: In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a $δ$-doped layer in silicon after encapsulation at 250$^{\circ}$C and roo… ▽ More

    Submitted 21 July, 2003; originally announced July 2003.

  4. Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

    Authors: L. Oberbeck, N. J. Curson, M. Y. Simmons, R. Brenner, A. R. Hamilton, S. R. Schofield, R. G. Clark

    Abstract: The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine saturation dosing of a Si(100) surface at room temperature, a critical annealing step to incorporate phosphorus atoms, and subsequent epitaxial sil… ▽ More

    Submitted 19 August, 2002; originally announced August 2002.

    Comments: 3 pages, 4 figures