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Co-tunneling spin blockade observed in a three-terminal triple quantum dot
Authors:
A. Noiri,
T. Takakura,
T. Obata,
T. Otsuka,
T. Nakajima,
J. Yoneda,
S. Tarucha
Abstract:
We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right dot with the left and right leads as a common source and the center lead as a drain. In the biased stability diagram, we establish Pauli spin blockade in the resp…
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We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right dot with the left and right leads as a common source and the center lead as a drain. In the biased stability diagram, we establish Pauli spin blockade in the respective neighboring dots, with features similarly obtained in double quantum dot systems. We further realize Pauli spin blockade with two different conditions by tuning the inter-dot coupling gates: strong and weak inter-dot tunnel coupling regimes. In the strong-coupling regime we observe significant suppression of co-tunneling through the respective double dots due to Pauli spin blockade. We reveal the influence from the third dot in the triple dot device on this co-tunneling Pauli spin blockade and clarify that the co-tunneling Pauli spin blockade is lifted by the resonant coupling of excited states to the third dot level as well as spin exchange of the left and right dots with the adjacent reservoir.
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Submitted 9 October, 2017;
originally announced October 2017.
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Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots
Authors:
Jun Yoneda,
Tomohiro Otsuka,
Tatsuki Takakura,
Michel Pioro-Ladrière,
Roland Brunner,
Hong Lu,
Takashi Nakajima,
Toshiaki Obata,
Akito Noiri,
Christopher J. Palmstrøm,
Arthur C. Gossard,
Seigo Tarucha
Abstract:
Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a desig…
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Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids.
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Submitted 7 July, 2015;
originally announced July 2015.
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Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins
Authors:
J. Yoneda,
T. Otsuka,
T. Nakajima,
T. Takakura,
T. Obata,
M. Pioro-Ladrière,
H. Lu,
C. Palmstrøm,
A. C. Gossard,
S. Tarucha
Abstract:
We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition…
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We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition, we establish fast z-rotations up to 54 MHz by directly controlling the spin phase. Our findings will significantly facilitate tomography and error correction with electron spins in quantum dots.
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Submitted 25 November, 2014;
originally announced November 2014.
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Single to quadruple quantum dots with tunable tunnel couplings
Authors:
Tatsuki Takakura,
Akito Noiri,
Toshiaki Obata,
Tomohiro Otsuka,
Jun Yoneda,
Katsuharu Yoshida,
Seigo Tarucha
Abstract:
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry. For the triple and quadruple dots we study gate-tunable inter-dot tunnel couplings. Particularly for the triple dot we find that the effe…
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We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry. For the triple and quadruple dots we study gate-tunable inter-dot tunnel couplings. Particularly for the triple dot we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot device has gate performance relevant for implementing spin-based four-qubit systems with controllable exchange couplings.
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Submitted 9 January, 2014;
originally announced January 2014.
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Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
Authors:
T. Obata,
K. Takeda,
J. Kamioka,
T. Kodera,
W. M. Akhtar,
K. Sawano,
S. Oda,
Y. Shiraki,
S. Tarucha
Abstract:
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signa…
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We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.
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Submitted 12 November, 2013;
originally announced November 2013.
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Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
Authors:
K. Takeda,
T. Obata,
Y. Fukuoka,
W. M. Akhtar,
J. Kamioka,
T. Kodera,
S. Oda,
S. Tarucha
Abstract:
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negativ…
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We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.
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Submitted 29 March, 2013;
originally announced April 2013.
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Coherent Manipulation of Individual Electron Spin in a Double Quantum Dot Integrated with a Micro-Magnet
Authors:
Toshiaki Obata,
Michel Pioro-Ladriere,
Yasuhiro Tokura,
Yun-Sok Shin,
Toshihiro Kubo,
Katsuharu Yoshida,
Tomoyasu Taniyama,
Seigo Tarucha
Abstract:
We report the coherent manipulation of electron spins in a double quantum dot integrated with a micro-magnet. We performed electric dipole spin resonance experiments in the continuous wave (CW) and pump-and-probe modes. We observed two resonant CW peaks and two Rabi oscillations of the quantum dot current by sweeping an external magnetic field at a fixed frequency. Two peaks and oscillations are…
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We report the coherent manipulation of electron spins in a double quantum dot integrated with a micro-magnet. We performed electric dipole spin resonance experiments in the continuous wave (CW) and pump-and-probe modes. We observed two resonant CW peaks and two Rabi oscillations of the quantum dot current by sweeping an external magnetic field at a fixed frequency. Two peaks and oscillations are measured at different resonant magnetic field, which reflects the fact that the local magnetic fields at each quantum dot are modulated by the stray field of a micro-magnet. As predicted with a density matrix approach, the CW current is quadratic with respect to microwave (MW) voltage while the Rabi frequency (ν_Rabi) is linear. The difference between the ν_Rabi values of two Rabi oscillations directly reflects the MW electric field across the two dots. These results show that the spins on each dot can be manipulated coherently at will by tuning the micro-magnet alignment and MW electric field.
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Submitted 3 February, 2010;
originally announced February 2010.
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Electrically driven single electron spin resonance in a slanting Zeeman field
Authors:
M. Pioro-Ladriere,
T. Obata,
Y. Tokura,
Y. -S. Shin,
T. Kubo,
K. Yoshida,
T. Taniyama,
S. Tarucha
Abstract:
The rapidly rising fields of spintronics and quantum information science have led to a strong interest in developing the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins.…
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The rapidly rising fields of spintronics and quantum information science have led to a strong interest in developing the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins. In contrast, by mixing the spin and charge degrees of freedom in a controlled way through engineered non-uniform magnetic fields, electron spin can be manipulated electrically without the need of high-frequency magnetic fields. Here we realize electrically-driven addressable spin rotations on two individual electrons by integrating a micron-size ferromagnet to a double quantum dot device. We find that the electrical control and spin selectivity is enabled by the micro-magnet's stray magnetic field which can be tailored to multi-dots architecture. Our results demonstrate the feasibility of manipulating electron spins electrically in a scalable way.
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Submitted 7 May, 2008;
originally announced May 2008.
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Microwave band on-chip coil technique for single electron spin resonance in a quantum dot
Authors:
Toshiaki Obata,
Michel Pioro-Ladriere,
Toshihiro Kubo,
Katsuharu Yoshida,
Yasuhiro Tokura,
Seigo Tarucha
Abstract:
Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequ…
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Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequency responses of the return loss and Coulomb blockade current are examined. Capacitive coupling between a coil and a quantum dot causes photon assisted tunneling, whose signal can greatly overlap the electron spin resonance signal. To suppress the photon assisted tunneling effect, a technique for compensating for the microwave electric field is developed. Good performance of this technique is confirmed from measurement of Coulomb blockade oscillations.
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Submitted 24 October, 2007; v1 submitted 22 October, 2007;
originally announced October 2007.
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Micro-magnets for coherent control of spin-charge qubit in lateral quantum dots
Authors:
M. Pioro-Ladriere,
Y. Tokura,
T. Obata,
T. Kubo,
S. Tarucha
Abstract:
A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-le…
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A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot's orbitals. Operation speed and gate fidelity are related to device parameters. Sub 100 ns $π$ pulse duration can be achieved with lattice fluctuations coherence time of 4 ms for GaAs.
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Submitted 13 December, 2006;
originally announced December 2006.
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Coherent single electron spin control in a slanting Zeeman field
Authors:
Yasuhiro Tokura,
Wilfred G. van der Wiel,
Toshiaki Obata,
Seigo Tarucha
Abstract:
We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudo-spin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Si…
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We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudo-spin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Single qubit rotations and the C-NOT operation can be realized. We estimated relaxation ($T_1$) and coherence ($T_{2}$) times, and the (tunable) quality factor. This scheme implies important experimental advantages for single electron spin control.
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Submitted 15 October, 2005;
originally announced October 2005.
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Rotation-induced 3D vorticity in 4He superfluid films adsorbed on a porous glass
Authors:
M. Fukuda,
M. K. Zalalutdinov,
V. Kovacik,
T. Minoguchi,
T. Obata,
M. Kubota,
E. B. Sonin
Abstract:
Detailed study of torsional oscillator experiments under steady rotation up to 6.28 rad/sec is reported for a 4He superfluid monolayer film formed in 1 micrometer-pore diameter porous glass. We found a new dissipation peak with the height being in proportion to the rotation speed, which is located to the lower temperature than the vortex pair unbinding peak observed in the static state. We propo…
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Detailed study of torsional oscillator experiments under steady rotation up to 6.28 rad/sec is reported for a 4He superfluid monolayer film formed in 1 micrometer-pore diameter porous glass. We found a new dissipation peak with the height being in proportion to the rotation speed, which is located to the lower temperature than the vortex pair unbinding peak observed in the static state. We propose that 3D coreless vortices ("pore vortices") appear under rotation to explain this new peak. That is, the new peak originates from dissipation close to the pore vortex lines, where large superfluid velocity shifts the vortex pair unbinding dissipation to lower temperature. This explanation is confirmed by observation of nonlinear effects at high oscillation amplitudes.
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Submitted 10 May, 2004; v1 submitted 5 May, 2004;
originally announced May 2004.
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Calculation of the Phase Field of a Vortex Pair on the Surface of a Multiplly Connected Substrate
Authors:
T. Obata,
M. Kubota
Abstract:
The vortex pair phase field is calculated, through a solution of the Laplace equation, for a superfluid film adsorbed on the surface of a model 3D connected porous medium. A number of different vortex-antivortex pair configurations are considered as functions of the porosity or an aspect ratio of the model porous structure. The calculated results give the energy of a pair for motion of the vorte…
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The vortex pair phase field is calculated, through a solution of the Laplace equation, for a superfluid film adsorbed on the surface of a model 3D connected porous medium. A number of different vortex-antivortex pair configurations are considered as functions of the porosity or an aspect ratio of the model porous structure. The calculated results give the energy of a pair for motion of the vortex cores around a pore or a solid rod as well as for the string configuration corresponding to a linear separation of the vortex pair through the porous medium.
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Submitted 31 July, 2002;
originally announced July 2002.
