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Self-aligned pillar arrays embedding site-controlled single quantum dots for enhanced non-classical light emission
Authors:
Gediminas Juska,
Simone Varo,
Nicola Maraviglia,
John O'Hara,
Salvador Medina,
Luca Colavecchi,
Francesco Mattana,
Armando Trapala,
Michael Schmidt,
Agnieszka Gocalinska,
Emanuele Pelucchi
Abstract:
This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the non-planar surface morphology of pyramidal QD samples to define dielectric masks self - aligned to the QD positions. The mask size, and consequently the lateral dimensi…
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This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the non-planar surface morphology of pyramidal QD samples to define dielectric masks self - aligned to the QD positions. The mask size, and consequently the lateral dimensions of the pillars, is precisely controlled through a chemical mechanical polishing step, obviating the need for any additional lithography step for creating the pillar. This fabrication technique offers several key advantages, including precise control over the pillar sites, and fully deterministic embedding of QD structures. The functionality of the structures was validated by integrating single In0.25Ga0.75As QDs - upon two-photon excitation of the biexciton state, the emission of single and polarization-entangled photon pairs was observed. Additionally, an extra fabrication step to deposit dome-like structures atop the pillars was demonstrated, effectively enhancing light extraction efficiency up to 12%.
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Submitted 19 March, 2025;
originally announced March 2025.
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Ferroelectric modulation of quantum emitters in monolayer WS$_2$
Authors:
Sung-Joon Lee,
Hsun-Jen Chuang,
Andrew Yeats,
Kathleen M. McCreary,
Dante J. O'Hara,
Berend T. Jonker
Abstract:
Quantum photonics promises significant advances in secure communications, metrology, sensing and information processing/computation. Single photon sources are fundamental to this endeavor. However, the lack of high quality single photon sources remains a significant obstacle. We present here a new paradigm for the control of single photon emitters (SPEs) and single photon purity by integrating mon…
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Quantum photonics promises significant advances in secure communications, metrology, sensing and information processing/computation. Single photon sources are fundamental to this endeavor. However, the lack of high quality single photon sources remains a significant obstacle. We present here a new paradigm for the control of single photon emitters (SPEs) and single photon purity by integrating monolayer WS$_2$ with the organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)). We demonstrate that the ferroelectric domains in the P(VDF-TrFE) film control the purity of single photon emission from the adjacent WS$_2$. By switching the ferroelectric polarization, we reversibly tune the single photon purity between the semi-classical and quantum light regimes, with single photon purities as high as 94%. This provides another avenue for modulating and encoding quantum photonic information, complementing more complex approaches. This novel multidimensional heterostructure introduces a new avenue for control of quantum emitters by combining the nonvolatile ferroic properties of a ferroelectric with the radiative properties of the zero-dimensional atomic scale emitters embedded in the two-dimensional WS$_2$ semiconductor monolayer.
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Submitted 22 April, 2024;
originally announced April 2024.
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Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy
Authors:
Tiancong Zhu,
Dante J. O'Hara,
Brenton A. Noesges,
Menglin Zhu,
Jacob J. Repicky,
Mark R. Brenner,
Leonard J. Brillson,
Jinwoo Hwang,
Jay A. Gupta,
Roland K. Kawakami
Abstract:
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc…
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We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
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Submitted 11 April, 2020;
originally announced April 2020.
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Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$
Authors:
Tiancong Zhu,
Alexander J. Bishop,
Tong Zhou,
Menglin Zhu,
Dante J. O'Hara,
Alexander A. Baker,
Shuyu Cheng,
Robert C. Walko,
Jacob J. Repicky,
Jay A. Gupta,
Chris M. Jozwiak,
Eli Rotenberg,
Jinwoo Hwang,
Igor Žutić,
Roland K. Kawakami
Abstract:
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of…
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The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
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Submitted 17 March, 2020;
originally announced March 2020.
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Light Scattering from Solid-State Quantum Emitters: Beyond the Atomic Picture
Authors:
Alistair J. Brash,
Jake Iles-Smith,
Catherine L. Phillips,
Dara P. S. McCutcheon,
John O'Hara,
Edmund Clarke,
Benjamin Royall,
Jesper Mørk,
Maurice S. Skolnick,
A. Mark Fox,
Ahsan Nazir
Abstract:
Coherent scattering of light by a single quantum emitter is a fundamental process at the heart of many proposed quantum technologies. Unlike atomic systems, solid-state emitters couple to their host lattice by phonons. Using a quantum dot in an optical nanocavity, we resolve these interactions in both time and frequency domains, going beyond the atomic picture to develop a comprehensive model of l…
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Coherent scattering of light by a single quantum emitter is a fundamental process at the heart of many proposed quantum technologies. Unlike atomic systems, solid-state emitters couple to their host lattice by phonons. Using a quantum dot in an optical nanocavity, we resolve these interactions in both time and frequency domains, going beyond the atomic picture to develop a comprehensive model of light scattering from solid-state emitters. We find that even in the presence of a cavity, phonon coupling leads to a sideband that is completely insensitive to excitation conditions, and to a non-monotonic relationship between laser detuning and coherent fraction, both major deviations from atom-like behaviour.
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Submitted 11 April, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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Importance of Paramagnetic Background Subtraction for Determining the Magnetic Moment in Epitaxially Grown Monolayer and Few-Layer van der Waals Magnets
Authors:
Dante J. O'Hara,
Tiancong Zhu,
Roland K. Kawakami
Abstract:
Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the i…
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Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the impact of the background subtraction method for accurately determining the magnetic moments in such systems. Using the recently reported intrinsic two-dimensional (2D) van der Waals ferromagnet MnSe${_2}$ as an example, we show that a normal diamagnetic background subtraction method in analyzing the bulk magnetometry measurement will result in an unexpectedly large magnetic moment (greater than ~10 μ${_B}$ per formula unit). Through our systematic growth study, we identify an additional paramagnetic signal due to unintentional Mn doping of the substrate. To extract the correct magnetic moment, a paramagnetic background should also be considered. This yields a total magnetic moment of ~4 μ${_B}$ per formula unit in monolayer MnSe${_2}$, which is in close agreement to the theoretically predicted value.
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Submitted 3 July, 2018;
originally announced July 2018.
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Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Authors:
Dante J. O'Hara,
Tiancong Zhu,
Amanda H. Trout,
Adam S. Ahmed,
Yunqiu,
Luo,
Choong Hee Lee,
Mark R. Brenner,
Siddharth Rajan,
Jay A. Gupta,
David W. McComb,
Roland K. Kawakami
Abstract:
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structu…
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Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $α$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $α$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $α$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
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Submitted 22 February, 2018;
originally announced February 2018.
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Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers
Authors:
Walid Amamou,
Igor V. Pinchuk,
Amanda Hanks,
Robert Williams,
Nikolas Antolin,
Adam Goad,
Dante J. O'Hara,
Adam S. Ahmed,
Wolfgang Windl,
David W. McComb,
Roland K. Kawakami
Abstract:
We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt v…
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We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields.
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Submitted 26 June, 2017;
originally announced June 2017.
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Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Authors:
Choong Hee Lee,
Sriram Krishnamoorthy,
Dante J. O'Hara,
Jared M. Johnson,
John Jamison,
Roberto C. Myers,
Roland K. Kawakami,
Jinwoo Hwang,
Siddharth Rajan
Abstract:
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with r…
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Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with random in-plane orientation of domains was grown on sapphire and GaN substrates at a substrate temperature of 350-450 C with complete surface coverage and smooth surface morphology. Higher growth temperature (575 C) resulted in the formation of single-crystalline ε-GaSe triangular domains with six-fold symmetry confirmed by in-situ reflection high electron energy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-step growth method involving high temperature nucleation of single crystalline domains and low temperature growth to enhance coalescence was adopted to obtain continuous (002)-oriented GaSe with an epitaxial relationship with the substrate. While six-fold symmetry was maintained in the two step growth, β-GaSe phase was observed in addition to the dominant ε-GaSe in cross-sectional scanning transmission electron microscopy images. This work demonstrates the potential of growing high quality 2D-layered materials using molecular beam epitaxy and can be extended to the growth of other transition metal chalcogenides.
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Submitted 19 October, 2016;
originally announced October 2016.
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On-chip interference of single photons from an embedded quantum dot and an external laser
Authors:
Nikola Prtljaga,
Christopher Bentham,
John O'Hara,
Ben Royall,
Edmund Clarke,
Luke R Wilson,
Maurice S Skolnick,
A Mark Fox
Abstract:
In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter an…
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In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler. This experimental approach allows us to use classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.
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Submitted 9 June, 2016; v1 submitted 26 February, 2016;
originally announced February 2016.
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Application of metasurface description for multilayered metamaterials and an alternative theory for metamaterial perfect absorber
Authors:
Jiangfeng Zhou,
Hou-Tong Chen,
Thomas Koschny,
Abul K. Azad,
Antoinette J. Taylor,
Costas M. Soukoulis,
John F. O'Hara
Abstract:
We analyze single and multilayered metamaterials by modeling each layer as a metasurface with effective surface electric and magnetic susceptibility derived through a thin film approximation. Employing a transfer matrix method, these metasurfaces can be assembled into multilayered metamaterials to realize certain functionalities. We demonstrate numerically that this approach provides an alternativ…
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We analyze single and multilayered metamaterials by modeling each layer as a metasurface with effective surface electric and magnetic susceptibility derived through a thin film approximation. Employing a transfer matrix method, these metasurfaces can be assembled into multilayered metamaterials to realize certain functionalities. We demonstrate numerically that this approach provides an alternative interpretation of metamaterial-based perfect absorption, showing that the underlying mechanism is a modified Fabry-Perot resonance. This method provides a general approach applicable for decoupled or weakly coupled multilayered metamaterials.
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Submitted 1 November, 2011;
originally announced November 2011.
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Tuning the Resonance in High Temperature Superconducting Terahertz Metamaterials
Authors:
Hou-Tong Chen,
Hao Yang,
Ranjan Singh,
John F. O'Hara,
Abul K. Azad,
Stuart A. Trugman,
Q. X. Jia,
Antoinette J. Taylor
Abstract:
In this Letter we present resonance properties in terahertz metamaterials consisting of a split-ring resonator array made from high temperature superconducting films. By varying the temperature, we observed efficient metamaterial resonance switching and frequency tuning with some features not revealed before. The results were well reproduced by numerical simulations of metamaterial resonance using…
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In this Letter we present resonance properties in terahertz metamaterials consisting of a split-ring resonator array made from high temperature superconducting films. By varying the temperature, we observed efficient metamaterial resonance switching and frequency tuning with some features not revealed before. The results were well reproduced by numerical simulations of metamaterial resonance using the experimentally measured complex conductivity of the superconducting film. We developed a theoretical model that explains the tuning features, which takes into account the resistive resonance damping and additional split-ring inductance contributed from both the real and imaginary parts of the temperature-dependent complex conductivity. The theoretical model further predicted more efficient resonance switching and frequency shifting in metamaterials consisting of a thinner superconducting split-ring resonator array, which were also verified in experiments.
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Submitted 8 September, 2010;
originally announced September 2010.
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Flexible Quasi-Three-Dimensional Terahertz Metamaterials
Authors:
Abul K. Azad,
Hou-Tong Chen,
Antoinette J. Taylor,
Elshan Akhadov,
Nina R. Weisse-Bernstein,
John F. O'Hara
Abstract:
We characterize planar electric terahertz metamaterials fabricated on thin, flexible substrates using terahertz time-domain spectroscopy. Quasi-three-dimensional metamaterials are formed by stacking multiple metamaterial layers. Transmission measurements reveal resonant band-stop behavior that becomes stronger with an increasing number of layers. Extracted metamaterial dielectric functions are s…
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We characterize planar electric terahertz metamaterials fabricated on thin, flexible substrates using terahertz time-domain spectroscopy. Quasi-three-dimensional metamaterials are formed by stacking multiple metamaterial layers. Transmission measurements reveal resonant band-stop behavior that becomes stronger with an increasing number of layers. Extracted metamaterial dielectric functions are shown to be independent of the number of layers, validating the effective medium approximation. Limitations of this approximation are discussed.
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Submitted 30 April, 2008;
originally announced April 2008.
