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Estimation of π-π Electronic Couplings from Current Measurements
Authors:
J. Trasobaresa,
J. Rech,
T. Jonckheere,
T. Martin,
O. Aleveque,
E. Levillain,
V. Diez-Cabanes,
Y. Olivier,
J. Cornil,
J. P. Nys,
R. Sivakumarasamy,
K. Smaali,
P. Leclere,
A. Fujiwara,
D. Théron,
D. Vuillaume,
N. Clément
Abstract:
The π-π interactions between organic molecules are among the most important parameters for optimizing the transport and optical properties of organic transistors, light-emitting diodes, and (bio-) molecular devices. Despite substantial theoretical progress, direct experimental measurement of the π-π electronic coupling energy parameter t has remained an old challenge due to molecular structural va…
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The π-π interactions between organic molecules are among the most important parameters for optimizing the transport and optical properties of organic transistors, light-emitting diodes, and (bio-) molecular devices. Despite substantial theoretical progress, direct experimental measurement of the π-π electronic coupling energy parameter t has remained an old challenge due to molecular structural variability and the large number of parameters that affect the charge transport. Here, we propose a study of π-π interactions from electrochemical and current measurements on a large array of ferrocene-thiolated gold nanocrystals. We confirm the theoretical prediction that t can be assessed from a statistical analysis of current histograms. The extracted value of t ca. 35 meV is in the expected range based on our density functional theory analysis. Furthermore, the t distribution is not necessarily Gaussian and could be used as an ultrasensitive technique to assess intermolecular distance fluctuation at the subangström level. The present work establishes a direct bridge between quantum chemistry, electrochemistry, organic electronics, and mesoscopic physics, all of which were used to discuss results and perspectives in a quantitative manner.
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Submitted 2 April, 2017;
originally announced April 2017.
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On the Mechanical and Electronic Properties of Thiolated Gold Nanocrystals
Authors:
K. Smaali,
S. Desbief,
G. Foti,
T. Frederiksen,
D. Sanchez-Portal,
A. Arnau,
J. P. Nys,
P. Leclere,
D. Vuillaume,
N. Clement
Abstract:
We present a quantitative exploration, combining experiment and simulation, of the mechanical and electronic properties, as well as the modifications induced by an alkylthiolated coating, at the single NP level. We determine the response of the NPs to external pressure in a controlled manner by using an atomic force microscope tip. We find a strong reduction of their Young modulus, as compared to…
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We present a quantitative exploration, combining experiment and simulation, of the mechanical and electronic properties, as well as the modifications induced by an alkylthiolated coating, at the single NP level. We determine the response of the NPs to external pressure in a controlled manner by using an atomic force microscope tip. We find a strong reduction of their Young modulus, as compared to bulk gold, and a significant influence of strain in the electronic properties of the alkylthiolated NPs. Electron transport measurements of tiny molecular junctions (NP/alkylthiol/CAFM tip) show that the effective tunnelling barrier through the adsorbed monolayer strongly decreases with increasing the applied load, which translates in a remarkable and unprecedented increase of the tunnel current. These observations are successfully explained using simulations based on finite element analysis (FEA) and first-principles calculations that permit to consider the coupling between the mechanical response of the system and the electric dipole variations at the interface.
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Submitted 24 December, 2014;
originally announced December 2014.
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Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
Authors:
D. H. K. Murthy,
T. Xu,
W. H. Chen,
J. Houtepen A.,
T. J. Savenije,
L. D. A. Siebbeles,
J. P. Nys,
Christophe Krzeminski,
Bruno Grandidier,
Didier Stiévenard,
Philippe Pareige,
F. Jomard,
Gilles Patriache,
O. I. Lebedev
Abstract:
From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities duri…
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From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
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Submitted 28 June, 2011;
originally announced June 2011.
