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Certifying the quantumness of a nuclear spin qudit through its uniform precession
Authors:
Arjen Vaartjes,
Martin Nurizzo,
Lin Htoo Zaw,
Benjamin Wilhelm,
Xi Yu,
Danielle Holmes,
Daniel Schwienbacher,
Anders Kringhøj,
Mark R. van Blankenstein,
Alexander M. Jakob,
Fay E. Hudson,
Kohei M. Itoh,
Riley J. Murray,
Robin Blume-Kohout,
Namit Anand,
Andrew S. Dzurak,
David N. Jamieson,
Valerio Scarani,
Andrea Morello
Abstract:
Spin precession is a textbook example of dynamics of a quantum system that exactly mimics its classical counterpart. Here we challenge this view by certifying the quantumness of exotic states of a nuclear spin through its uniform precession. The key to this result is measuring the positivity, instead of the expectation value, of the $x$-projection of the precessing spin, and using a spin > 1/2 qud…
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Spin precession is a textbook example of dynamics of a quantum system that exactly mimics its classical counterpart. Here we challenge this view by certifying the quantumness of exotic states of a nuclear spin through its uniform precession. The key to this result is measuring the positivity, instead of the expectation value, of the $x$-projection of the precessing spin, and using a spin > 1/2 qudit, that is not restricted to semi-classical spin coherent states. The experiment is performed on a single spin-7/2 $^{123}$Sb nucleus, implanted in a silicon nanoelectronic device, amenable to high-fidelity preparation, control, and projective single-shot readout. Using Schrödinger cat states and other bespoke states of the nucleus, we violate the classical bound by 19 standard deviations, proving that no classical probability distribution can explain the statistic of this spin precession, and highlighting our ability to prepare quantum resource states with high fidelity in a single atomic-scale qudit.
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Submitted 10 October, 2024; v1 submitted 10 October, 2024;
originally announced October 2024.
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Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays
Authors:
Pierre Hamonic,
Martin Nurizzo,
Jayshankar Nath,
Matthieu C. Dartiailh,
Victor El-Homsy,
Mathis Fragnol,
Biel Martinez,
Pierre-Louis Julliard,
Bruna Cardoso Paz,
Mathilde Ouvrier-Buffet,
Jean-Baptiste Filippini,
Benoit Bertrand,
Heimanu Niebojewski,
Christopher Bäuerle,
Maud Vinet,
Franck Balestro,
Tristan Meunier,
Matias Urdampilleta
Abstract:
Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore,…
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Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures.
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Submitted 3 October, 2024;
originally announced October 2024.
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Schrödinger cat states of a nuclear spin qudit in silicon
Authors:
Xi Yu,
Benjamin Wilhelm,
Danielle Holmes,
Arjen Vaartjes,
Daniel Schwienbacher,
Martin Nurizzo,
Anders Kringhøj,
Mark R. van Blankenstein,
Alexander M. Jakob,
Pragati Gupta,
Fay E. Hudson,
Kohei M. Itoh,
Riley J. Murray,
Robin Blume-Kohout,
Thaddeus D. Ladd,
Namit Anand,
Andrew S. Dzurak,
Barry C. Sanders,
David N. Jamieson,
Andrea Morello
Abstract:
High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced co…
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High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced coherent states that can also be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here we demonstrate the creation and manipulation of Schrodinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and constitute logical Pauli operations for qubits encoded in the Schrodinger cat states. Our work demonstrates the ability to prepare and control nonclassical resource states, a prerequisite for applications in quantum information processing and quantum error correction using our scalable, manufacturable semiconductor platform.
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Submitted 13 January, 2025; v1 submitted 24 May, 2024;
originally announced May 2024.
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Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling
Authors:
Bernhard Klemt,
Victor El-Homsy,
Martin Nurizzo,
Pierre Hamonic,
Biel Martinez,
Bruna Cardoso Paz,
Cameron spence,
Matthieu Dartiailh,
Baptiste Jadot,
Emmanuel Chanrion,
Vivien Thiney,
Renan Lethiecq,
Benoit Bertrand,
Heimanu Niebojewski,
Christopher Bäuerle,
Maud Vinet,
Yann-Michel Niquet,
Tristan Meunier,
Matias Urdampilleta
Abstract:
For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting…
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For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.
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Submitted 8 March, 2023;
originally announced March 2023.
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Complete readout of two-electron spin states in a double quantum dot
Authors:
Martin Nurizzo,
Baptiste Jadot,
Pierre-André Mortemousque,
Vivien Thiney,
Emmanuel Chanrion,
David Niegemann,
Matthieu Dartiailh,
Arne Ludwig,
Andreas D. Wieck,
Christopher Bäuerle,
Matias Urdampilleta,
Tristan Meunier
Abstract:
We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurement…
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We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms.
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Submitted 1 September, 2022;
originally announced September 2022.
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Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K
Authors:
David J. Niegemann,
Victor El-Homsy,
Baptiste Jadot,
Martin Nurizzo,
Bruna Cardoso-Paz,
Emmanuel Chanrion,
Matthieu Dartiailh,
Bernhard Klemt,
Vivien Thiney,
Christopher Bäuerle,
Pierre-André Mortemousque,
Benoit Bertrand,
Heimanu Niebojewski,
Maud Vinet,
Franck Balestro,
Tristan Meunier,
Matias Urdampilleta
Abstract:
We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keep…
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We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keeping the same spin state with $a \approx 95.6\%$ fidelity.
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Submitted 21 July, 2022;
originally announced July 2022.
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Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling
Authors:
Martin Nurizzo,
Baptiste Jadot,
Pierre-André Mortemousque,
Vivien Thiney,
Emmanuel Chanrion,
Matthieu Dartiailh,
Arne Ludwig,
Andreas D. Wieck,
Christopher Bäuerle,
Matias Urdampilleta,
Tristan Meunier
Abstract:
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simp…
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Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling and sub-Hz isolation between adjacent dots. We use this novel development to isolate a sub part of the array while performing charge displacement and readout in the rest of the system. The degree of control over the tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation and readout including this capability.
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Submitted 19 July, 2022;
originally announced July 2022.
