Showing 1–33 of 33 results for author: Nowack, K C

Unconventional polaronic ground state in superconducting LiTi$_2$O$_4$

Authors: Zubia Hasan, Grace A. Pan, Harrison LaBollita, Austin Kaczmarek, Suk Hyun Sung, Shekhar Sharma, Purnima P. Balakrishnan, Edward Mercer, Vivek Bhartiya, Zaher Salman, Thomas Prokscha, Andreas Suter, Alexander J. Grutter, Mirian Garcia-Fernandez, Ke-Jin Zhou, Jonathan Pelliciari, Valentina Bisogni, Ismail El Baggari, Darrell G. Schlom, Matthew R. Barone, Charles M. Brooks, Katja C. Nowack, Antia S. Botana, Brendan D. Faeth, Alberto de la Torre , et al. (1 additional authors not shown)

Abstract: Geometrically frustrated lattices can display a range of correlated phenomena, ranging from spin frustration and charge order to dispersionless flat bands due to quantum interference. One particularly compelling family of such materials is the half-valence spinel Li$B_2$O$_4$ materials. On the $B$-site frustrated pyrochlore sublattice, the interplay of correlated metallic behavior and charge frust… ▽ More Geometrically frustrated lattices can display a range of correlated phenomena, ranging from spin frustration and charge order to dispersionless flat bands due to quantum interference. One particularly compelling family of such materials is the half-valence spinel Li$B_2$O$_4$ materials. On the $B$-site frustrated pyrochlore sublattice, the interplay of correlated metallic behavior and charge frustration leads to a superconducting state in LiTi$_2$O$_4$ and heavy fermion behavior in LiV$_2$O$_4$. To date, however, LiTi$_2$O$_4$ has primarily been understood as a conventional BCS superconductor despite a lattice structure that could host more exotic groundstates. Here, we present a multimodal investigation of LiTi$_2$O$_4$, combining ARPES, RIXS, proximate magnetic probes, and ab-initio many-body theoretical calculations. Our data reveals a novel mobile polaronic ground state with spectroscopic signatures that underlie co-dominant electron-phonon coupling and electron-electron correlations also found in the lightly doped cuprates. The cooperation between the two interaction scales distinguishes LiTi$_2$O$_4$ from other superconducting titanates, suggesting an unconventional origin to superconductivity in LiTi$_2$O$_4$. Our work deepens our understanding of the rare interplay of electron-electron correlations and electron-phonon coupling in unconventional superconducting systems. In particular, our work identifies the geometrically frustrated, mixed-valence spinel family as an under-explored platform for discovering unconventional, correlated ground states. △ Less

Submitted 14 May, 2025; originally announced May 2025.

Flux trapping in NbTiN strips and structures

Authors: Ruiheng Bai, Aliakbar Sepehri, Yen-Lee Loh, Anne-Marie Valente-Feliciano, Anna Herr, Quentin Herr, Katja C. Nowack

Abstract: We use scanning superconducting quantum interference device (SQUID) microscopy to image vortices in superconducting strips fabricated from NbTiN thin films. We repeatedly cool superconducting strips with different width in an applied magnetic field and image the individual vortices. From these images we determine the threshold field at which the first vortex enters a strip, as well as the number a… ▽ More We use scanning superconducting quantum interference device (SQUID) microscopy to image vortices in superconducting strips fabricated from NbTiN thin films. We repeatedly cool superconducting strips with different width in an applied magnetic field and image the individual vortices. From these images we determine the threshold field at which the first vortex enters a strip, as well as the number and spatial configuration of vortices beyond this threshold field. We model vortex behavior with and without considering the effect of pinning by numercially minimizing the Gibbs free energy of vortices in the strips. Our measurements provide a first benchmark to understand the flux trapping properties of NbTiN thin films directly relevant to NbTiN-based superconducting circuits and devices. △ Less

Submitted 18 March, 2025; originally announced March 2025.

Visualizing the breakdown of the quantum anomalous Hall effect

Authors: George M. Ferguson, Run Xiao, Anthony R. Richardella, Austin Kaczmarek, Nitin Samarth, Katja C. Nowack

Abstract: The creation of topologically non-trivial matter across electronic, mechanical, cold-atom, and photonic platforms is advancing rapidly, yet understanding the breakdown of topological protection remains a major challenge. In this work, we use magnetic imaging combined with global electrical transport measurements to visualize the current-induced breakdown of the quantum anomalous Hall effect (QAHE)… ▽ More The creation of topologically non-trivial matter across electronic, mechanical, cold-atom, and photonic platforms is advancing rapidly, yet understanding the breakdown of topological protection remains a major challenge. In this work, we use magnetic imaging combined with global electrical transport measurements to visualize the current-induced breakdown of the quantum anomalous Hall effect (QAHE) in a magnetically doped topological insulator. We find that dissipation emerges at localized hot spots near electrical contacts, where an abrupt change in Hall angle leads to significant distortions of the current density. Using the local magnetization as a proxy for electron temperature, we directly observe that the electrons are driven out of equilibrium with the lattice at the hot spots and throughout the device in the breakdown regime. By characterizing energy relaxation processes in our device, we show that the breakdown of quantization is governed entirely by electron heating, and that a vanishing thermal relaxation strength at millikelvin temperatures limits the robustness of the QAHE. Our findings provide a framework for diagnosing energy relaxation in topological materials and will guide realizing robust topological protection in magnetic topological insulators. △ Less

Submitted 4 March, 2025; originally announced March 2025.

Imaging signatures of edge currents in a magnetic topological insulator

Authors: G. M. Ferguson, Run Xiao, Anthony R. Richardella, Austin Kaczmarek, Nitin Samarth, Katja C. Nowack

Abstract: Magnetic topological insulators (MTIs) host topologically protected edge states, but the role that these edge states play in electronic transport remains unclear. Using scanning superconducting quantum interference device (SQUID) microscopy, we performed local measurements of the current distribution in a quantum anomalous Hall (QAH) insulator at large bias currents, where the quantization of the… ▽ More Magnetic topological insulators (MTIs) host topologically protected edge states, but the role that these edge states play in electronic transport remains unclear. Using scanning superconducting quantum interference device (SQUID) microscopy, we performed local measurements of the current distribution in a quantum anomalous Hall (QAH) insulator at large bias currents, where the quantization of the conductivity tensor breaks down. We find that bulk currents in the channel interior coexist with edge currents at the sample boundary. While the position of the edge current changes with the reversal of the magnetic field, it does not depend on the current direction. To understand our observations, we introduce a model which includes contributions from both the sample magnetization and currents driven by chemical potential gradients. To parameterize our model, we use local measurements of the chemical potential induced changes in the sample magnetization. Our model reveals that the observed edge currents can be understood as changes in the magnetization generated by the electrochemical potential distribution in the sample under bias. Our work underscores the complexity of electronic transport in MTIs and highlights both the value and challenges of using magnetic imaging to disentangle various contributions to the electronic transport signatures. △ Less

Submitted 20 January, 2025; originally announced January 2025.

Direct Comparison of Magnetic Penetration Depth in Kagome Superconductors AV$_3$Sb$_5$ (A = Cs, K, Rb)

Authors: Austin Kaczmarek, Andrea Capa Salinas, Stephen D. Wilson, Katja C. Nowack

Abstract: We report measurements of the local temperature-dependent penetration depth, $λ(T)$, in the Kagome superconductors AV$_3$Sb$_5$ (A = Cs, K, Rb) using scanning superconducting quantum interference device (SQUID) microscopy. Our results suggest that the superconducting order in all three compounds is fully gapped, in contrast to reports of nodal superconductivity in KV$_3$Sb$_5$ and RbV$_3$Sb$_5$. A… ▽ More We report measurements of the local temperature-dependent penetration depth, $λ(T)$, in the Kagome superconductors AV$_3$Sb$_5$ (A = Cs, K, Rb) using scanning superconducting quantum interference device (SQUID) microscopy. Our results suggest that the superconducting order in all three compounds is fully gapped, in contrast to reports of nodal superconductivity in KV$_3$Sb$_5$ and RbV$_3$Sb$_5$. Analysis of the temperature-dependent superfluid density, $ρ_s(T)$, shows deviations from the behavior expected for a single isotropic gap, but the data are well described by models incorporating either a single anisotropic gap or two isotropic gaps. Notably, the temperature dependences of $λ(T)$ and $ρ_s(T)$ in KV$_3$Sb$_5$ and RbV$_3$Sb$_5$ are qualitatively more similar to each other than to CsV$_3$Sb$_5$, consistent with the superconducting phase reflecting features of the normal-state band structure. Our findings provide a direct comparison of the superconducting properties across the AV$_3$Sb$_5$ family. △ Less

Submitted 6 January, 2025; v1 submitted 27 December, 2024; originally announced December 2024.

Comments: 5 pages, 3 figures

Direct Imaging of Transition-Edge Sensors with Scanning SQUID Microscopy

Authors: Samantha Walker, Austin Kaczmarek, Jason Austermann, Douglas Bennett, Shannon M. Duff, Johannes Hubmayr, Ben Keller, Kelsey Morgan, Colin C. Murphy, Daniel Swetz, Joel Ullom, Michael D. Niemack, Katja C. Nowack

Abstract: Significant advancements have been made in understanding the physics of transition-edge sensors (TESs) over the past decade. However, key questions remain, particularly a detailed understanding of the current-dependent resistance of these detectors when biased within their superconducting transition. We use scanning superconducting quantum interference device (SQUID) microscopy (SSM) to image the… ▽ More Significant advancements have been made in understanding the physics of transition-edge sensors (TESs) over the past decade. However, key questions remain, particularly a detailed understanding of the current-dependent resistance of these detectors when biased within their superconducting transition. We use scanning superconducting quantum interference device (SQUID) microscopy (SSM) to image the local diamagnetic response of aluminum-manganese alloy (Al-Mn) transition-edge sensors (TESs) near their critical temperature of approximately 175 mK. By doing so, we gain insights into how the device dimensions influence TES transition width, which in turn affects device operation and informs optimal device design. Our images reveal that the Al-Mn thin film near the niobium (Nb) leads exhibits an excess diamagnetic response at temperatures several milli-Kelvin (mK) higher than the bulk of the film farther from the contacts. A possible origin of this behavior is a longitudinal proximity effect between the Nb and Al-Mn where the TES acts as a weak link between superconducting leads. We discuss how this effect shapes the temperature dependence of the resistance as the spacing between the leads decreases. This work demonstrates that magnetic imaging with SSM is a powerful tool for local characterization of superconducting detectors. △ Less

Submitted 2 October, 2024; originally announced October 2024.

Comments: 5 pages, 4 figures, Applied Superconductivity Conference (ASC 2024) proceedings, submitted to IEEE Transactions on Applied Superconductivity (IEEE TAS)

Local magnetic response of superconducting Sr$\mathrm{_2}$RuO$\mathrm{_4}$ thin films and rings

Authors: G. M. Ferguson, Hari P. Nair, Nathaniel J. Schreiber, Ludi Miao, Kyle M. Shen, Darrell G. Schlom, Katja C. Nowack

Abstract: We conduct local magnetic measurements on superconducting thin-film samples of Sr$\mathrm{_2}$RuO$\mathrm{_4}$ using scanning Superconducting Quantum Interference Device (SQUID) susceptometry. From the diamagnetic response, we extract the magnetic penetration depth, $λ$, which exhibits a quadratic temperature dependence at low temperatures. Although a quadratic dependence in high-purity bulk sampl… ▽ More We conduct local magnetic measurements on superconducting thin-film samples of Sr$\mathrm{_2}$RuO$\mathrm{_4}$ using scanning Superconducting Quantum Interference Device (SQUID) susceptometry. From the diamagnetic response, we extract the magnetic penetration depth, $λ$, which exhibits a quadratic temperature dependence at low temperatures. Although a quadratic dependence in high-purity bulk samples has been attributed to non-local electrodynamics, our analysis suggests that in our thin-film samples the presence of scattering is the origin of the quadratic dependence. While we observe micron-scale variations in the diamagnetic response and superconducting transition temperature, the form of the temperature dependence of $λ$ is independent of position. Finally, we characterize flux trapping in superconducting rings lithographically fabricated from the thin films, paving the way to systematic device-based tests of the superconducting order parameter in Sr$\mathrm{_2}$RuO$\mathrm{_4}$. △ Less

Submitted 25 March, 2024; originally announced March 2024.

2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science

Authors: D. V. Christensen, U. Staub, T. R. Devidas, B. Kalisky, K. C. Nowack, J. L. Webb, U. L. Andersen, A. Huck, D. A. Broadway, K. Wagner, P. Maletinsky, T. van der Sar, C. R. Du, A. Yacoby, D. Collomb, S. Bending, A. Oral, H. J. Hug, A. -O. Mandru, V. Neu, H. W. Schumacher, S. Sievers, H. Saito, A. A. Khajetoorians, N. Hauptmann , et al. (28 additional authors not shown)

Abstract: Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of… ▽ More Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Current-induced switching of thin film $α$-Fe$_2$O$_3$ devices imaged using a scanning single-spin microscope

Authors: Qiaochu Guo, Anthony D'Addario, Yang Cheng, Jeremy Kline, Isaiah Gray, Hil Fung Harry Cheung, Fengyuan Yang, Katja C. Nowack, Gregory D. Fuchs

Abstract: Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30 nm thick, c-axis oriented $α$-Fe$_2$O$_3$ Hall devices using a… ▽ More Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30 nm thick, c-axis oriented $α$-Fe$_2$O$_3$ Hall devices using a diamond nitrogen-vacancy (NV) center scanning microscope. Using the canted moment of $α$-Fe$_2$O$_3$ as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. We repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along $[\bar{1}\bar{1}20]$ and $[11\bar{2}0]$, suggesting that despite the expected 3-fold magneto-crystalline anisotropy, our $α$-Fe$_2$O$_3$ thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in $α$-Fe$_2$O$_3$. We find that the fraction of the device that switches depends on the current pulse duration, amplitude and direction relative to the initialization field. Specifically, we find that switching is most efficient when current is applied along the direction of the initialization field. △ Less

Submitted 12 October, 2022; originally announced October 2022.

Comments: 17 pages including supporting information

Superfluid response of an atomically thin, gate-tuned van der Waals superconductor

Authors: Alexander Jarjour, G. M. Ferguson, Brian T. Schaefer, Menyoung Lee, Yen Lee Loh, Nandini Trivedi, Katja C. Nowack

Abstract: A growing number of two-dimensional superconductors are being discovered in the family of layered van der Waals (vdW) materials. Due to small sample volume, their characterization has been largely limited to electrical transport measurements. As a consequence, characterization of the diamagnetic response of the superfluid to an applied magnetic field, a defining property of any superconductor, has… ▽ More A growing number of two-dimensional superconductors are being discovered in the family of layered van der Waals (vdW) materials. Due to small sample volume, their characterization has been largely limited to electrical transport measurements. As a consequence, characterization of the diamagnetic response of the superfluid to an applied magnetic field, a defining property of any superconductor, has been lacking. Here, we use a local magnetic probe to directly measure the superfluid response of the tunable, gate-induced superconducting state in MoS$_2$. We find that the backgate changes the superconducting transition temperature non-monotonically whereas the superfluid stiffness at low temperature and the normal state conductivity monotonically increase with backgate voltage. In some devices, we find direct signatures in agreement with a Berezinskii-Kosterlitz-Thouless transition, whereas in others we find a broadened, shallow onset of the superfluid response. We show that the observed behavior is consistent with disorder playing an important role in determining the superconducting properties in superconducting MoS$_2$. Our work demonstrates that magnetic property measurements are within reach for vdW superconductors and reveals that the superfluid response significantly deviates from simple BCS-like behavior. △ Less

Submitted 23 September, 2022; originally announced September 2022.

Direct visualization of electronic transport in a quantum anomalous Hall insulator

Authors: G. M. Ferguson, Run Xiao, Anthony R. Richardella, David Low, Nitin Samarth, Katja C. Nowack

Abstract: A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity makes the microscopic details of the local current distribution inaccessible to global transport measurements. Accordingly, the current distributions that give r… ▽ More A quantum anomalous Hall (QAH) insulator is characterized by quantized Hall and vanishing longitudinal resistances at zero magnetic field that are protected against local perturbations and independent of sample details. This insensitivity makes the microscopic details of the local current distribution inaccessible to global transport measurements. Accordingly, the current distributions that give rise to the transport quantization are unknown. Here we use magnetic imaging to directly visualize the transport current in the QAH regime. As we tune through the QAH plateau by electrostatic gating, we clearly identify a regime in which the sample transports current primarily in the bulk rather than along the edges. Furthermore, we image the local response of the magnetization to electrostatic gating. Combined, these measurements suggest that incompressible regions carry the current within the QAH regime. Our observations indicate that the self-consistent electrostatics of the sample play a central role in determining the current distribution. Identifying the appropriate microscopic picture of electronic transport in QAH insulators and other topologically non-trivial states of matter is a crucial step towards realizing their potential in next-generation quantum devices. △ Less

Submitted 24 December, 2021; originally announced December 2021.

Electrically tunable and reversible magnetoelectric coupling in strained bilayer graphene

Authors: Brian T. Schaefer, Katja C. Nowack

Abstract: The valleys in hexagonal two-dimensional systems with broken inversion symmetry carry an intrinsic orbital magnetic moment. Despite this, such systems possess zero net magnetization unless additional symmetries are broken, since the contributions from both valleys cancel. A nonzero net magnetization can be induced through applying both uniaxial strain to break the rotational symmetry of the lattic… ▽ More The valleys in hexagonal two-dimensional systems with broken inversion symmetry carry an intrinsic orbital magnetic moment. Despite this, such systems possess zero net magnetization unless additional symmetries are broken, since the contributions from both valleys cancel. A nonzero net magnetization can be induced through applying both uniaxial strain to break the rotational symmetry of the lattice and an in-plane electric field to break time-reversal symmetry owing to the resulting current. This creates a magnetoelectric effect whose strength is characterized by a magnetoelectric susceptibility, which describes the induced magnetization per unit applied in-plane electric field. Here, we predict the strength of this magnetoelectric susceptibility for Bernal-stacked bilayer graphene as a function of the magnitude and direction of strain, the chemical potential, and the interlayer electric field. We estimate that an orbital magnetization of ~5400 $μ_{\text{B}}/μ\text{m}^2$ can be achieved for 1% uniaxial strain and a 10 $μ\text{A}$ bias current, which is almost three orders of magnitude larger than previously probed experimentally in strained monolayer MoS$_2$. We also identify regimes in which the magnetoelectric susceptibility not only switches sign upon reversal of the interlayer electric field but also in response to small changes in the carrier density. Taking advantage of this reversibility, we further show that it is experimentally feasible to probe the effect using scanning magnetometry. △ Less

Submitted 6 March, 2021; originally announced March 2021.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 103, 224426 (2021)

Scanning SQUID microscopy in a cryogen-free dilution refrigerator

Authors: D. Low, G. M. Ferguson, Alexander Jarjour, Brian T. Schaefer, Maja D. Bachmann, Philip J. W. Moll, Katja C. Nowack

Abstract: We report a scanning superconducting quantum interference device (SQUID) microscope in a cryogen-free dilution refrigerator with a base temperature at the sample stage of at least 30 mK. The microscope is rigidly mounted to the mixing chamber plate to optimize thermal anchoring of the sample. The microscope housing fits into the bore of a superconducting vector magnet, and our design accommodates… ▽ More We report a scanning superconducting quantum interference device (SQUID) microscope in a cryogen-free dilution refrigerator with a base temperature at the sample stage of at least 30 mK. The microscope is rigidly mounted to the mixing chamber plate to optimize thermal anchoring of the sample. The microscope housing fits into the bore of a superconducting vector magnet, and our design accommodates a large number of wires connecting the sample and sensor. Through a combination of vibration isolation in the cryostat and a rigid microscope housing, we achieve relative vibrations between the SQUID and sample that allow us to image with micrometer resolution over a 150 $μ$m range while the sample stage temperature remains at base temperature. To demonstrate the capabilities of our system, we show images acquired simultaneously of the static magnetic field, magnetic susceptibility, and magnetic fields produced by a current above a superconducting micrometer-scale device. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Gate-Tunable Graphene Hall Sensors with High Magnetic Field Sensitivity

Authors: Brian T. Schaefer, Lei Wang, Alexander Jarjour, Kenji Watanabe, Takashi Taniguchi, Paul L. McEuen, Katja C. Nowack

Abstract: Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but Hall-effect sensors are in principle able to operate over a broad range of these conditions. Here, we fabricate and characterize micrometer-scale graphene Hall s… ▽ More Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but Hall-effect sensors are in principle able to operate over a broad range of these conditions. Here, we fabricate and characterize micrometer-scale graphene Hall sensors demonstrating high magnetic field sensitivity from liquid-helium to room temperature and in background magnetic field up to several Tesla. By tuning the charge carrier density with an electrostatic gate, we optimize the magnetic field sensitivity for different working conditions. From measurements of the Hall coefficient and the Hall voltage noise at 1 kHz, we estimate an optimum magnetic field sensitivity of 80 nT Hz$^{-1/2}$ at 4.2 K, 700 nT Hz$^{-1/2}$ at room temperature, and 3 $μ$T Hz$^{-1/2}$ in 3 T background magnetic field at 4.2 K. Our devices perform competitively with the best existing Hall sensor technologies at room temperature, outperform any Hall sensors reported in the literature at 4.2 K, and demonstrate high sensitivity for the first time in a few Tesla applied magnetic field. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures

Authors: Isaiah Gray, Takahiro Moriyama, Nikhil Sivadas, Gregory M. Stiehl, John T. Heron, Ryan Need, Brian J. Kirby, David H. Low, Katja C. Nowack, Darrell G. Schlom, Daniel C. Ralph, Teruo Ono, Gregory D. Fuchs

Abstract: As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin S… ▽ More As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin Seebeck microscopy as a sensitive, table-top method for imaging antiferromagnetic order in thin films, and apply this technique to study spin-torque switching in NiO/Pt and Pt/NiO/Pt heterostructures. We establish the interfacial antiferromagnetic spin Seebeck effect in NiO as a probe of surface Néel order, resolving antiferromagnetic spin domains within crystalline twin domains. By imaging before and after applying current-induced spin torque, we resolve spin domain rotation and domain wall motion, acting simultaneously. We correlate the changes in spin Seebeck images with electrical measurements of the average Néel orientation through the spin Hall magnetoresistance, confirming that we image antiferromagnetic order. △ Less

Submitted 1 March, 2019; v1 submitted 9 October, 2018; originally announced October 2018.

Comments: 26 pages including supporting information

Journal ref: Phys. Rev. X 9, 041016 (2019)

Spatially modulated heavy-fermion superconductivity in CeIrIn5

Authors: Maja D. Bachmann, G. M. Ferguson, Florian Theuss, Tobias Meng, Carsten Putzke, Toni Helm, K. R. Shirer, You-Sheng Li, K. A. Modic, Michael Nicklas, Markus Koenig, D. Low, Sayak Ghosh, Andrew P. Mackenzie, Frank Arnold, Elena Hassinger, Ross D. McDonald, Laurel E. Winter, Eric D. Bauer, Filip Ronning, B. J. Ramshaw, Katja C. Nowack, Philip J. W. Moll

Abstract: The ability to spatially modulate the electronic properties of solids has led to landmark discoveries in condensed matter physics as well as new electronic applications. Although crystals of strongly correlated metals exhibit a diverse set of electronic ground states, few approaches to spatially modulating their properties exist. Here we demonstrate spatial control over the superconducting state i… ▽ More The ability to spatially modulate the electronic properties of solids has led to landmark discoveries in condensed matter physics as well as new electronic applications. Although crystals of strongly correlated metals exhibit a diverse set of electronic ground states, few approaches to spatially modulating their properties exist. Here we demonstrate spatial control over the superconducting state in mesoscale samples of the canonical heavy-fermion superconductor CeIrIn5. We use a focused ion beam (FIB) to pattern crystals on the microscale, which tailors the strain induced by differential thermal contraction into specific areas of the device. The resulting non-uniform strain fields induce complex patterns of superconductivity due to the strong dependence of the transition temperature on the strength and direction of strain. Electrical transport and magnetic imaging of devices with different geometry show that the obtained spatial modulation of superconductivity agrees with predictions based on finite element simulations. These results present a generic approach to manipulating electronic order on micrometer length scales in strongly correlated matter. △ Less

Submitted 21 September, 2018; v1 submitted 13 July, 2018; originally announced July 2018.

Comments: 29 pages, 14 figures

Journal ref: Science 366, 221 (2019)

Evolution of superconductivity in ultrathin NbS2

Authors: Rusen Yan, Guru Khalsa, Brian T. Schaefer, Alexander Jarjour, Sergei Rouvimov, Katja C. Nowack, Huili G. Xing, Debdeep Jena

Abstract: We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3 cm2/Vs. The superconducting transition temperature is found to decrease with thickness. We find that the suppression of superconductivity is due to disorder re… ▽ More We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3 cm2/Vs. The superconducting transition temperature is found to decrease with thickness. We find that the suppression of superconductivity is due to disorder resulting from the incorporation of atmospheric oxygen and a reduced hole density. Cross-section transmission electron microscope (TEM) imaging reveals a chemical change of NbS2 in ambient conditions, resulting in the formation of amorphous oxide layers sandwiching crystalline layered NbS2. Though few-nm-thick 2H-NbS2 completely converts to amorphous oxide in ambient conditions, PMMA encapsulation prevents further chemical change and preserves superconductivity. △ Less

Submitted 16 March, 2018; originally announced March 2018.

Comments: 16 pages, 5 figures

Enhanced Superconducting Transition Temperature due to Tetragonal Domains in Two-Dimensionally Doped SrTiO$_3$

Authors: Hilary Noad, Eric M. Spanton, Katja C. Nowack, Hisashi Inoue, Minu Kim, Tyler A. Merz, Christopher Bell, Yasuyuki Hikita, Ruqing Xu, Wenjun Liu, Arturas Vailionis, Harold Y. Hwang, Kathryn A. Moler

Abstract: Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We st… ▽ More Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We studied the effects of twin structure on superconductivity in a 5.5-nm-thick layer of niobium-doped SrTiO$_{3}$ embedded in undoped SrTiO$_{3}$. We used a scanning superconducting quantum interference device susceptometer to image the local diamagnetic response of the sample as a function of temperature. We observed regions that exhibited a superconducting transition temperature $T_{c}$ $\gtrsim$ 10% higher than the temperature at which the sample was fully superconducting. The pattern of these regions varied spatially in a manner characteristic of structural twin domains. Our results emphasize that the anisotropic dielectric properties of SrTiO$_{3}$ are important for its superconductivity, and need to be considered in any theory of the mechanism of the superconductivity. △ Less

Submitted 30 May, 2016; v1 submitted 26 May, 2016; originally announced May 2016.

Comments: 14 pages, 11 figures, Supplemental Information available at http://stanford.edu/group/moler/papers/Noad_STOsuperconductivity_SI.pdf

Journal ref: Phys. Rev. B 94, 174516 (2016)

Images of edge current in InAs/GaSb quantum wells

Authors: Eric M. Spanton, Katja C. Nowack, Lingjie Du, Gerard Sullivan, Rui-Rui Du, Kathryn A. Moler

Abstract: Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$, it is independent of temp… ▽ More Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature-independent. △ Less

Submitted 21 June, 2014; v1 submitted 7 January, 2014; originally announced January 2014.

Comments: Version accepted to Physical Review Letters (http://prl.aps.org/). 12 pages, 3 figures. Supplementary Online Materials available at http://stanford.edu/group/moler/papers/Spanton_InAsGaSb_imaging_SI_v2.pdf

Journal ref: Phys. Rev. Lett. 113, 026804 (2014)

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

Authors: Beena Kalisky, Eric M. Spanton, Hilary Noad, John R. Kirtley, Katja C. Nowack, Christopher Bell, Hiroki K. Sato, Masayuki Hosoda, Yanwu Xie, Yasuyuki Hikita, Carsten Woltmann, Georg Pfanzelt, Rainer Jany, Christoph Richter, Harold Y. Hwang, Jochen Mannhart, Kathryn A. Moler

Abstract: The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the int… ▽ More The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures. △ Less

Submitted 11 December, 2013; originally announced December 2013.

Journal ref: Nature Materials 12, 1091-1095 (2013)

Simultaneous Spin-Charge Relaxation in Double Quantum Dots

Authors: V. Srinivasa, K. C. Nowack, M. Shafiei, L. M. K. Vandersypen, J. M. Taylor

Abstract: We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning bet… ▽ More We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning. △ Less

Submitted 7 March, 2013; originally announced March 2013.

Comments: 5 pages, 3 figures, Supplemental Material (2 pages, 2 figures)

Imaging currents in HgTe quantum wells in the quantum spin Hall regime

Authors: Katja C. Nowack, Eric M. Spanton, Matthias Baenninger, Markus König, John R. Kirtley, Beena Kalisky, C. Ames, Philipp Leubner, Christoph Brüne, Hartmut Buhmann, Laurens W. Molenkamp, David Goldhaber-Gordon, Kathryn A. Moler

Abstract: The quantum spin Hall (QSH) state is a genuinely new state of matter characterized by a non-trivial topology of its band structure. Its key feature is conducting edge channels whose spin polarization has potential for spintronic and quantum information applications. The QSH state was predicted and experimentally demonstrated to exist in HgTe quantum wells. The existence of the edge channels has be… ▽ More The quantum spin Hall (QSH) state is a genuinely new state of matter characterized by a non-trivial topology of its band structure. Its key feature is conducting edge channels whose spin polarization has potential for spintronic and quantum information applications. The QSH state was predicted and experimentally demonstrated to exist in HgTe quantum wells. The existence of the edge channels has been inferred from the fact that local and non-local conductance values in sufficiently small devices are close to the quantized values expected for ideal edge channels and from signatures of the spin polarization. The robustness of the edge channels in larger devices and the interplay between the edge channels and a conducting bulk are relatively unexplored experimentally, and are difficult to assess via transport measurements. Here we image the current in large Hallbars made from HgTe quantum wells by probing the magnetic field generated by the current using a scanning superconducting quantum interference device (SQUID). We observe that the current flows along the edge of the device in the QSH regime, and furthermore that an identifiable edge channel exists even in the presence of disorder and considerable bulk conduction as the device is gated or its temperature is raised. Our results represent a versatile method for the characterization of new quantum spin Hall materials systems, and confirm both the existence and the robustness of the predicted edge channels. △ Less

Submitted 13 December, 2012; v1 submitted 10 December, 2012; originally announced December 2012.

Comments: 11 pages, 4 figures; v2: link to supplementary information added, see http://www.stanford.edu/group/moler/publications.html

Resolving Spin-Orbit and Hyperfine Mediated Electric Dipole Spin Resonance in a Quantum Dot

Authors: M. Shafiei, K. C. Nowack, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: We investigate the electric manipulation of a single electron spin in a single gate-defined quantum dot. We observe that so-far neglected differences between the hyperfine and spin-orbit mediated electric dipole spin resonance conditions have important consequences at high magnetic fields. In experiments using adiabatic rapid passage to invert the electron spin, we observe an unusually wide and as… ▽ More We investigate the electric manipulation of a single electron spin in a single gate-defined quantum dot. We observe that so-far neglected differences between the hyperfine and spin-orbit mediated electric dipole spin resonance conditions have important consequences at high magnetic fields. In experiments using adiabatic rapid passage to invert the electron spin, we observe an unusually wide and asymmetric response as a function of magnetic field. Simulations support the interpretation of the lineshape in terms of four different resonance conditions. These findings may lead to isotope-selective control of dynamic nuclear polarization in quantum dots. △ Less

Submitted 26 June, 2013; v1 submitted 13 July, 2012; originally announced July 2012.

Journal ref: Physical Review Letters 110, 107601 (2013)

Measurements of the gate tuned superfluid density in superconducting LaAlO3/SrTiO3

Authors: Julie A. Bert, Katja C. Nowack, Beena Kalisky, Hilary Noad, John R. Kirtley, Chris Bell, Hiroki K. Sato, Masayuki Hosoda, Yasayuki Hikita, Harold Y. Hwang, Kathryn A. Moler

Abstract: The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting orde… ▽ More The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting order parameter is unanswered. We present local magnetic susceptibility, related to the superfluid density, as a function of temperature, gate voltage and location. We show that the temperature dependence of the superfluid density at different gate voltages collapse to a single curve characteristic of a full superconducting gap. Further, we show that the dipole moments observed in this system are not modulated by the gate voltage. △ Less

Submitted 17 May, 2012; originally announced May 2012.

Locking electron spins into magnetic resonance by electron-nuclear feedback

Authors: I. T. Vink, K. C. Nowack, F. H. L. Koppens, J. Danon, Yu. V. Nazarov, L. M. K. Vandersypen

Abstract: The main obstacle to coherent control of two-level quantum systems is their coupling to an uncontrolled environment. For electron spins in III-V quantum dots, the random environment is mostly given by the nuclear spins in the quantum dot host material; they collectively act on the electron spin through the hyperfine interaction, much like a random magnetic field. Here we show that the same hyper… ▽ More The main obstacle to coherent control of two-level quantum systems is their coupling to an uncontrolled environment. For electron spins in III-V quantum dots, the random environment is mostly given by the nuclear spins in the quantum dot host material; they collectively act on the electron spin through the hyperfine interaction, much like a random magnetic field. Here we show that the same hyperfine interaction can be harnessed such that partial control of the normally uncontrolled environment becomes possible. In particular, we observe that the electron spin resonance frequency remains locked to the frequency of an applied microwave magnetic field, even when the external magnetic field or the excitation frequency are changed. The nuclear field thereby adjusts itself such that the electron spin resonance condition remains satisfied. General theoretical arguments indicate that this spin resonance locking is accompanied by a significant reduction of the randomness in the nuclear field. △ Less

Submitted 16 February, 2009; originally announced February 2009.

Comments: 6 pages, 5 figures, 4 pages supplementary material

Journal ref: Nature Physics 5, 764 (2009)

Multiple Nuclear Polarization States in a Double Quantum Dot

Authors: J. Danon, I. T. Vink, F. H. L. Koppens, K. C. Nowack, L. M. K. Vandersypen, Yu. V. Nazarov

Abstract: We observe multiple stable states of nuclear polarization in a double quantum dot under conditions of electron spin resonance. The stable states can be understood within an elaborated theoretical rate equation model for the polarization in each of the dots, in the limit of strong driving. This model also captures unusual features of the data, such as fast switching and a `wrong' sign of polariza… ▽ More We observe multiple stable states of nuclear polarization in a double quantum dot under conditions of electron spin resonance. The stable states can be understood within an elaborated theoretical rate equation model for the polarization in each of the dots, in the limit of strong driving. This model also captures unusual features of the data, such as fast switching and a `wrong' sign of polarization. The results reported enable applications of this polarization effect, including manipulation and control of nuclear fields. △ Less

Submitted 9 June, 2009; v1 submitted 16 February, 2009; originally announced February 2009.

Comments: 5 pages, 4 figures, 7 pages supplementary material

Journal ref: Phys. Rev. Lett. 103, 046601 (2009)

Spin-echo of a single electron spin in a quantum dot

Authors: F. H. L. Koppens, K. C. Nowack, L. M. K. Vandersypen

Abstract: We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession around a random effective field from the nuclear spins in the host material. We reverse this dephasing to a large extent via a spin-echo pulse, and find a spin-e… ▽ More We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession around a random effective field from the nuclear spins in the host material. We reverse this dephasing to a large extent via a spin-echo pulse, and find a spin-echo decay time of about 0.5 microseconds at 70 mT. These results are in the range of theoretical predictions of the electron spin coherence time governed by the dynamics of the electron-nuclear system. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 100, 236802 (2008)

Coherent control of a single electron spin with electric fields

Authors: K. C. Nowack, F. H. L. Koppens, Yu. V. Nazarov, L. M. K. Vandersypen

Abstract: Manipulation of single spins is essential for spin-based quantum information processing. Electrical control instead of magnetic control is particularly appealing for this purpose, since electric fields are easy to generate locally on-chip. We experimentally realize coherent control of a single electron spin in a quantum dot using an oscillating electric field generated by a local gate. The elect… ▽ More Manipulation of single spins is essential for spin-based quantum information processing. Electrical control instead of magnetic control is particularly appealing for this purpose, since electric fields are easy to generate locally on-chip. We experimentally realize coherent control of a single electron spin in a quantum dot using an oscillating electric field generated by a local gate. The electric field induces coherent transitions (Rabi oscillations) between spin-up and spin-down with pi/2 rotations as fast as ~55ns. Our analysis indicates that the electrically-induced spin transitions are mediated by the spin-orbit interaction. Taken together with the recently demonstrated coherent exchange of two neighboring spins, our results demonstrate the feasibility of fully electrical manipulation of spin qubits. △ Less

Submitted 10 March, 2008; v1 submitted 20 July, 2007; originally announced July 2007.

Comments: Total 24 pages, 10 pages main text, 4 figures, 10 pages supplementary material

Journal ref: Science 318, pp. 1430-1433 (2007)

Detection of single electron spin resonance in a double quantum dot

Authors: F. H. L. Koppens, C. Buizert, I. T. Vink, K. C. Nowack, T. Meunier, L. P. Kouwenhoven, L. M. K. Vandersypen

Abstract: Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron as well as the hybridization of two-electron spin states. In this paper, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance… ▽ More Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron as well as the hybridization of two-electron spin states. In this paper, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement. △ Less

Submitted 12 April, 2007; originally announced April 2007.

Comments: 7 pages, 5 figures. To be published in Journal of Applied Physics, proceedings ICPS 2006

Universal phase shift and non-exponential decay of driven single-spin oscillations

Authors: F. H. L. Koppens, D. Klauser, W. A. Coish, K. C. Nowack, L. P. Kouwenhoven, D. Loss, L. M. K. Vandersypen

Abstract: We study, both theoretically and experimentally, driven Rabi oscillations of a single electron spin coupled to a nuclear spin bath. Due to the long correlation time of the bath, two unusual features are observed in the oscillations. The decay follows a power law, and the oscillations are shifted in phase by a universal value of ~pi/4. These properties are well understood from a theoretical expre… ▽ More We study, both theoretically and experimentally, driven Rabi oscillations of a single electron spin coupled to a nuclear spin bath. Due to the long correlation time of the bath, two unusual features are observed in the oscillations. The decay follows a power law, and the oscillations are shifted in phase by a universal value of ~pi/4. These properties are well understood from a theoretical expression that we derive here in the static limit for the nuclear bath. This improved understanding of the coupled electron-nuclear system is important for future experiments using the electron spin as a qubit. △ Less

Submitted 3 November, 2007; v1 submitted 24 March, 2007; originally announced March 2007.

Comments: Main text: 4 pages, 3 figures, Supplementary material: 2 pages, 3 figures

Journal ref: Phys. Rev. Lett. 99, 106803 (2007)

Driven coherent oscillations of a single electron spin in a quantum dot

Authors: F. H. L. Koppens, C. Buizert, K. J. Tielrooij, I. T. Vink, K. C. Nowack, T. Meunier, L. P. Kouwenhoven, L. M. K. Vandersypen

Abstract: The ability to control the quantum state of a single electron spin in a quantum dot is at the heart of recent developments towards a scalable spin-based quantum computer. In combination with the recently demonstrated exchange gate between two neighbouring spins, driven coherent single spin rotations would permit universal quantum operations. Here, we report the experimental realization of single… ▽ More The ability to control the quantum state of a single electron spin in a quantum dot is at the heart of recent developments towards a scalable spin-based quantum computer. In combination with the recently demonstrated exchange gate between two neighbouring spins, driven coherent single spin rotations would permit universal quantum operations. Here, we report the experimental realization of single electron spin rotations in a double quantum dot. First, we apply a continuous-wave oscillating magnetic field, generated on-chip, and observe electron spin resonance in spin-dependent transport measurements through the two dots. Next, we coherently control the quantum state of the electron spin by applying short bursts of the oscillating magnetic field and observe about eight oscillations of the spin state (so-called Rabi oscillations) during a microsecond burst. These results demonstrate the feasibility of operating single-electron spins in a quantum dot as quantum bits. △ Less

Submitted 21 August, 2006; originally announced August 2006.

Comments: Total 25 pages. 11 pages main text, 5 figures, 9 pages supplementary material

Journal ref: Nature 442, 766-771 (2006)

Nuclear wave function interference in single-molecule electron transport

Authors: Maarten R. Wegewijs, Katja C. Nowack

Abstract: It is demonstrated that non-equilibrium vibrational effects are enhanced in molecular devices for which the effective potential for vibrations is sensitive to the charge state of the device. We calculate the electron tunneling current through a molecule accounting for the two simplest qualitative effects of the charging on the nuclear potential for vibrational motion: a shift (change in the equi… ▽ More It is demonstrated that non-equilibrium vibrational effects are enhanced in molecular devices for which the effective potential for vibrations is sensitive to the charge state of the device. We calculate the electron tunneling current through a molecule accounting for the two simplest qualitative effects of the charging on the nuclear potential for vibrational motion: a shift (change in the equilibrium position) and a distortion (change in the vibrational frequency). The distortion has two important effects: firstly, it breaks the symmetry between the excitation spectra of the two charge states. This gives rise to new transport effects which map out changes in the current-induced non-equilibrium vibrational distribution with increasing bias voltage. Secondly, the distortion modifies the Franck-Condon factors for electron tunneling. Together with the spectral asymmetry this gives rise to pronounced nuclear wave function interference effects on the electron transport. For instance nuclear-parity forbidden transitions lead to differential conductance anti-resonances, which are stronger than those due to allowed transitions. For special distortion and shift combinations a coherent suppression of transport beyond a bias voltage threshold is possible. △ Less

Submitted 9 January, 2006; originally announced January 2006.

Comments: 25 pages, 20 figures For high quality figures, get the paper from the free online journal: http://www.iop.org/EJ/abstract/1367-2630/7/1/239

Journal ref: Focus on NEMS Issue, New J. Phys. 7, 239 (2005)

Vibration-assisted tunneling through competing molecular states

Authors: Katja C. Nowack, Maarten R. Wegewijs

Abstract: We calculate the non-linear tunneling current through a molecule with two electron-accepting orbitals which interact with an intramolecular vibration. We investigate the interplay between Coulomb blockade and non-equilibrium vibration-assisted tunneling under the following assumptions: (i) The Coulomb charging effect restricts the number of extra electrons to one. (ii) The orbitals are non-degen… ▽ More We calculate the non-linear tunneling current through a molecule with two electron-accepting orbitals which interact with an intramolecular vibration. We investigate the interplay between Coulomb blockade and non-equilibrium vibration-assisted tunneling under the following assumptions: (i) The Coulomb charging effect restricts the number of extra electrons to one. (ii) The orbitals are non-degenerate and couple asymmetrically to the vibration. (iii) The tunneling induces a non-equilibrium vibrational distribution; we compare with the opposite limit of strong relaxation of the vibration due to some dissipative environment. We find that a non-equilibrium feedback mechanism in the tunneling transitions generates strong negative differential conductance (NDC) in the model with two competing orbitals, whereas in a one-orbital model it leads only to weak NDC. In addition, we find another mechanism leading to weak NDC over a broader range of applied voltages. This pervasive effect is completely robust against strong relaxation of the vibrational energy. Importantly, the modulation of the electronic transport is based on an intramolecular asymmetry. We show that one can infer a non-equilibrium vibrational distribution when finding NDC under distinct gate- and bias-voltage conditions. In contrast, we demonstrate that any NDC effect in the one-orbital case is completely suppressed in the strong relaxation limit. △ Less

Submitted 21 June, 2005; originally announced June 2005.