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Showing 1–1 of 1 results for author: Notario, J A D

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  1. arXiv:2111.04119  [pdf

    cond-mat.mes-hall

    Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism

    Authors: Adil Rehman, Juan Antonio Delgado Notario, Juan Salvador Sanchez, Yahya Moubarak Meziani, Grzegorz CywiƄski, Wojciech Knap, Alexander A. Balandin, Michael Levinshtein, Sergey Rumyantsev

    Abstract: The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magne… ▽ More

    Submitted 7 November, 2021; originally announced November 2021.

    Comments: 23 pages, 3 figures, Noise measurements of h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations