Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism
Authors:
Adil Rehman,
Juan Antonio Delgado Notario,
Juan Salvador Sanchez,
Yahya Moubarak Meziani,
Grzegorz CywiĆski,
Wojciech Knap,
Alexander A. Balandin,
Michael Levinshtein,
Sergey Rumyantsev
Abstract:
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magne…
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The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately uB=1 (u is the electron mobility). This observation proves unambiguously that the mobility fluctuations are the dominant mechanism of the electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device.
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Submitted 7 November, 2021;
originally announced November 2021.