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Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm$^2$/Vs at a perovskite oxide interface
Authors:
Georg Hoffmann,
Martina Zupancic,
Aysha A. Riaz,
Curran Kalha,
Christoph Schlueter,
Andrei Gloskovskii,
Anna Regoutz,
Martin Albrecht,
Johanna Nordlander,
Oliver Bierwagen
Abstract:
In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimensional electron gas (2DEG) with possible applications in, e.g., high-electronmobility transistors and ferroelectric field-effect transistors. So far, t…
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In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimensional electron gas (2DEG) with possible applications in, e.g., high-electronmobility transistors and ferroelectric field-effect transistors. So far, the realization of oxide 2DEGs is, however, largely limited to the interface between the single-crystal substrate and epitaxial film, preventing their deliberate placement inside a larger device architecture. Additionally, the substrate-limited quality of perovskite oxide interfaces hampers room-temperature 2DEG performance due to notoriously low electron mobility. In this work, we demonstrate the controlled creation of an interfacial 2DEG at the epitaxial interface between perovskite oxides BaSnO$_3$ and LaInO$_3$ with enhanced room-temperature electron mobilities up to 119 cm$^2$/Vs - the highest room-temperature value reported so far for a perovskite oxide 2DEG. Using a combination of state-of-the-art deposition modes during oxide molecular beam epitaxy, our approach opens up another degree of freedom in optimization and $in$-$situ$ control of the interface between two epitaxial oxide layers away from the substrate interface. We thus expect our approach to apply to the general class of perovskite oxide 2DEG systems and to enable their improved compatibility with novel device concepts and integration across materials platforms.
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Submitted 14 August, 2024;
originally announced August 2024.
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Nanoscale ferroelectric programming of van der Waals heterostructures
Authors:
Dengyu Yang,
Qingrui Cao,
Erin Akyuz,
John Hayden,
Josh Nordlander,
Muqing Yu,
Ranjani Ramachandran,
Patrick Irvin,
Jon-Paul Maria,
Benjamin M. Hunt,
Jeremy Levy
Abstract:
The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide ra…
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The ability to create superlattices in van der Waals (vdW) heterostructures via moiré interference heralded a new era in the science and technology of two-dimensional materials. Through precise control of the twist angle, flat bands and strongly correlated phases have been engineered. The precise twisting of vdW layers is in some sense a bottom-up approach--a single parameter can dial in a wide range of periodic structures. Here, we describe a top-down approach to engineering nanoscale potentials in vdW layers using a buried programmable ferroelectric layer. Ultra-low-voltage electron beam lithography (ULV-EBL) is used to program ferroelectric domains in a ferroelectric Al_{1-x}B_{x}N thin film through a graphene/hexagonal boron nitride (hBN) heterostructure that is transferred on top. We demonstrate ferroelectric field effects by creating a lateral p-n junction, and demonstrate spatial resolution down to 35 nm, limited by the resolution of our scanned probe characterization methods. This innovative, resist-free patterning method is predicted to achieve 10 nm resolution and enable arbitrary programming of vdW layers, opening a pathway to create new phases that are inaccessible by moiré techniques. The ability to "paint" different phases of matter on a single vdW "canvas" provides a wealth of new electronic and photonic functionalities.
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Submitted 17 July, 2024;
originally announced July 2024.
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Nonlinear optical diode effect in a magnetic Weyl semimetal
Authors:
Christian Tzschaschel,
Jian-Xiang Qiu,
Xue-Jian Gao,
Hou-Chen Li,
Chunyu Guo,
Hung-Yu Yang,
Cheng-Ping Zhang,
Ying-Ming Xie,
Yu-Fei Liu,
Anyuan Gao,
Damien Bérubé,
Thao Dinh,
Sheng-Chin Ho,
Yuqiang Fang,
Fuqiang Huang,
Johanna Nordlander,
Qiong Ma,
Fazel Tafti,
Philip J. W. Moll,
Kam Tuen Law,
Su-Yang Xu
Abstract:
Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimeta…
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Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.
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Submitted 8 April, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Antiferromagnetic metal phase in an electron-doped rare-earth nickelate
Authors:
Qi Song,
Spencer Doyle,
Grace A. Pan,
Ismail El Baggari,
Dan Ferenc Segedin,
Denisse Cordova Carrizales,
Johanna Nordlander,
Christian Tzschaschel,
James R. Ehrets,
Zubia Hasan,
Hesham El-Sherif,
Jyoti Krishna,
Chase Hanson,
Harrison LaBollita,
Aaron Bostwick,
Chris Jozwiak,
Eli Rotenberg,
Su-Yang Xu,
Alessandra Lanzara,
Alpha T. N'Diaye,
Colin A. Heikes,
Yaohua Liu,
Hanjong Paik,
Charles M. Brooks,
Betul Pamuk
, et al. (6 additional authors not shown)
Abstract:
Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric sp…
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Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric spin structures. The rare earth nickelate NdNiO3 is known to be a noncollinear antiferromagnet where the onset of antiferromagnetic ordering is concomitant with a transition to an insulating state. Here, we find that for low electron doping, the magnetic order on the nickel site is preserved while electronically a new metallic phase is induced. We show that this metallic phase has a Fermi surface that is mostly gapped by an electronic reconstruction driven by the bond disproportionation. Furthermore, we demonstrate the ability to write to and read from the spin structure via a large zero-field planar Hall effect. Our results expand the already rich phase diagram of the rare-earth nickelates and may enable spintronics applications in this family of correlated oxides.
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Submitted 14 November, 2022;
originally announced November 2022.
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Epitaxy of hexagonal ABO$_3$ quantum materials
Authors:
Johanna Nordlander,
Margaret A. Anderson,
Charles M. Brooks,
Megan E. Holtz,
Julia A. Mundy
Abstract:
Hexagonal $AB$O$_3$ oxides ($A$, $B$ = cation) are a rich materials class for realizing novel quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination and quasi-two dimensional layering give rise to properties distinct from those of the cubic $AB$O$_3$ perovskites. As bulk materials, most of the focus in this materials class has been on the rare earth manganites, $R$MnO…
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Hexagonal $AB$O$_3$ oxides ($A$, $B$ = cation) are a rich materials class for realizing novel quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination and quasi-two dimensional layering give rise to properties distinct from those of the cubic $AB$O$_3$ perovskites. As bulk materials, most of the focus in this materials class has been on the rare earth manganites, $R$MnO$_3$ ($R$ = rare earth); these materials display coupled ferroelectricity and antiferromagnetic order. In this review, we focus on the thin film manifestations of the hexagonal $AB$O$_3$ oxides. We cover the stability of the hexagonal oxides and substrates which can be used to template the hexagonal structure. We show how the thin film geometry not only allows for further tuning of the bulk-stable manganites but also the realization of metastable hexagonal oxides such as the $R$FeO$_3$ that combine ferroelectricity with weak ferromagnetic order. The thin film geometry is a promising platform to stabilize additional metastable hexagonal oxides to search for predicted high-temperature superconductivity and topological phases in this materials class.
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Submitted 16 September, 2022;
originally announced September 2022.
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Epitaxial integration of improper ferroelectric h-YMnO$_3$ thin films in heterostructures
Authors:
J. Nordlander,
M. D. Rossell,
M. Campanini,
M. Fiebig,
M. Trassin
Abstract:
We report on multiple fundamental qualitative improvements in the growth of improper ferroelectric hexagonal YMnO$_3$ (YMO) thin films and heterostructures by pulsed laser deposition (PLD). By a combination of pre-growth substrate annealing and low-energy-fluence PLD, we obtain a two-dimensional growth mode of the YMO films on yttria-stabilized zirconia (YSZ) with ultralow roughness and devoid of…
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We report on multiple fundamental qualitative improvements in the growth of improper ferroelectric hexagonal YMnO$_3$ (YMO) thin films and heterostructures by pulsed laser deposition (PLD). By a combination of pre-growth substrate annealing and low-energy-fluence PLD, we obtain a two-dimensional growth mode of the YMO films on yttria-stabilized zirconia (YSZ) with ultralow roughness and devoid of misoriented nanocrystalline inclusions. By inserting a sacrificial manganite layer capped with conducting indium-tin oxide between the substrate and the final film, the latter is grown in a fully lattice-relaxed mode and, thus, without any misfit dislocations while maintaining the extraordinary flatness of the films grown directly on pre-annealed YSZ. This provides a template for the fabrication of heterostructures based on hexagonal manganites as promising class of multiferroics with improper room-temperature ferroelectricity and the implementation of these into technologically relevant epitaxial metal|ferroelectric-type multilayers.
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Submitted 4 November, 2020;
originally announced November 2020.
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Long-lived modulation of plasmonic absorption by ballistic thermal injection
Authors:
John A. Tomko,
Evan L. Runnerstrom,
Yi-Siang Wang,
Joshua R. Nolen,
David H. Olson,
Kyle P. Kelley,
Angela Cleri,
Josh Nordlander,
Joshua D. Caldwell,
Oleg V. Prezhdo,
Jon-Paul Maria,
Patrick E. Hopkins
Abstract:
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast pl…
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Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations.
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Submitted 20 May, 2020;
originally announced May 2020.
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Combined electrostatic and strain engineering of BiFeO$_3$ thin films at the morphotropic phase boundary
Authors:
Johanna Nordlander,
Bastien F. Grosso,
Marta D. Rossell,
Aline Maillard,
Elzbieta Gradauskaite,
Nicola A. Spaldin,
Manfred Fiebig,
Morgan Trassin
Abstract:
Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over the more common rhombohedral (R) structure. To utilize the functionality of such metastable BFO phases in device applications, it is essential to understand the f…
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Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over the more common rhombohedral (R) structure. To utilize the functionality of such metastable BFO phases in device applications, it is essential to understand the ferroelectric phase evolution upon insertion in nanoscale heterostructures. Here, we explore the emergence of ferroelectric phases close to the morphotropic phase boundary in compressively strained BFO during thin-film growth using in-situ optical second harmonic generation. We find that the epitaxial films form at the growth temperature in the ideal T phase without critical thickness for the polarization. Signatures of T-like and R-like monoclinically distorted phases only appear upon sample cooling. We furthermore demonstrate a robustness of single-domain polarization in the high-temperature T phase during the growth of capacitor-like metal|ferroelectric|metal heterostructures. Here, a reduction in tetragonality of the T phase, rather than domain formation, lowers the electrostatic energy. At this lower tetragonality, density-functional calculations and scanning transmission electron microscopy point to the stabilization of a new metastable R-like monoclinic structure upon cooling the heterostructure down to room temperature. Our results thus show that the combination of strain and electrostatic phase stabilization in BFO heterostructures yields a prominent platform for exploring ferroelectric phases and realizing ultrathin ferroelectric devices.
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Submitted 25 October, 2022; v1 submitted 19 May, 2020;
originally announced May 2020.
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Inversion-symmetry engineering in sub-unit-cell-layered oxide thin films
Authors:
J. Nordlander,
M. D. Rossell,
M. Campanini,
M. Fiebig,
M. Trassin
Abstract:
Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of…
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Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of materials where inversion symmetry can be turned on or off by design may be the ultimate route towards controlling parity-related phenomena and functionalities. Here, we engineer the symmetry of ultrathin epitaxial oxide films by sub-unit-cell growth control. We reversibly activate and deactivate inversion symmetry in the layered hexagonal manganites, h-RMnO$_3$ with R = Y, Er, Tb. While an odd number of half-unit-cell layers exhibits a breaking of inversion symmetry through its arrangement of MnO$_5$ bipyramids, an even number of such half-unit-cell layers takes on a centrosymmetric structure. Here we control the resulting symmetry by tracking the growth in situ via optical second-harmonic generation. We furthermore demonstrate that our symmetry engineering works independent of the choice of R and even in heterostructures mixing constituents with different R in a two-dimensional growth mode. Symmetry engineering on the atomic level thus suggests a new platform for the controlled activation and deactivation of symmetry-governed functionalities in oxide-electronic epitaxial thin films.
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Submitted 18 May, 2020;
originally announced May 2020.
