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Twisted nonlinear optics in monolayer van der Waals crystals
Authors:
Tenzin Norden,
Luis M. Martinez,
Nehan Tarefder,
Kevin W. C. Kwock,
Luke M. McClintock,
Nicholas Olsen,
Luke N. Holtzman,
Xiaoyang Zhu,
James C. Hone,
Jinkyoung Yoo,
Jian-Xin Zhu,
P. James Schuck,
Antoinette J. Taylor,
Rohit P. Prasankumar,
Wilton J. M. Kort-Kamp,
Prashant Padmanabhan
Abstract:
In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep…
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In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep pace with the ever-growing need to shrink the fundamental length-scale of photonic technologies to the nanometer regime6. Here, we push the boundaries of vortex nonlinear optics to the ultimate limits of material dimensionality. By exploiting second and third-order frequency-mixing processes in semiconducting monolayers, we demonstrate the independent manipulation of the wavelength, orbital angular momentum, and spatial distribution of vortex light-fields. Due to the atomically-thin nature of the host quantum material, this control spans a broad spectral bandwidth in a highly-integrable platform, unconstrained by the traditional limits of bulk nonlinear optical materials. Our work heralds a new avenue for ultra-compact and scalable hybrid nanotechnologies empowered by twisted nonlinear light-matter interactions in van der Waals quantum nanomaterials.
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Submitted 27 April, 2024; v1 submitted 22 April, 2024;
originally announced April 2024.
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Giant Valley Splitting in Monolayer WS2 by Magnetic Proximity Effect
Authors:
Tenzin Norden,
Chuan Zhao,
Peiyao Zhang,
Renat Sabirianov,
Athos Petrou,
Hao Zeng
Abstract:
Lifting the valley degeneracy of monolayer transition metal dichalcogenides (TMD) would allow versatile control of the valley degree of freedom. We report a giant valley exciton splitting of 18 meV/T for monolayer WS2, using the proximity effect from a ferromagnetic EuS substrate, which is enhanced by nearly two orders of magnitude from the 0.2 meV/T obtained by an external magnetic field. More in…
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Lifting the valley degeneracy of monolayer transition metal dichalcogenides (TMD) would allow versatile control of the valley degree of freedom. We report a giant valley exciton splitting of 18 meV/T for monolayer WS2, using the proximity effect from a ferromagnetic EuS substrate, which is enhanced by nearly two orders of magnitude from the 0.2 meV/T obtained by an external magnetic field. More interestingly, a sign reversal of the valley exciton splitting is observed as compared to that of WSe2 on EuS. Using first principles calculations, we investigate the complex behavior of exchange interactions between TMDs and EuS, that is qualitatively different from the Zeeman effect. The sign reversal is attributed to competing ferromagnetic (FM) and antiferromagnetic (AFM) exchange interactions for Eu- and S- terminated EuS surface sites. They act differently on the conduction and valence bands of WS2 compared to WSe2. Tuning the sign and magnitude of the valley exciton splitting offers opportunities for versatile control of valley pseudospin for quantum information processing.
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Submitted 15 February, 2019;
originally announced February 2019.
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Optical control of carrier wavefunction in magnetic quantum dots
Authors:
P. Zhang,
T. Norden,
J. M. Pientka,
R. Oszwałdowski,
A. Najafi,
B. Barman,
Y. Tsai,
W-C. Fan,
W-C. Chou,
J. E. Han,
I. Žutić,
B. D. McCombe,
A. Petrou
Abstract:
Spatially indirect Type-II band alignment in magnetically-doped quantum dot (QD) structures provides unexplored opportunities to control the magnetic interaction between carrier wavefunction in the QD and magnetic impurities. Unlike the extensively studied, spatially direct, QDs with Type-I band alignment where both electrons and holes are confined in the QD, in ZnTe QDs embedded in a (Zn,Mn)Se ma…
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Spatially indirect Type-II band alignment in magnetically-doped quantum dot (QD) structures provides unexplored opportunities to control the magnetic interaction between carrier wavefunction in the QD and magnetic impurities. Unlike the extensively studied, spatially direct, QDs with Type-I band alignment where both electrons and holes are confined in the QD, in ZnTe QDs embedded in a (Zn,Mn)Se matrix only the holes are confined in the QDs. Photoexcitation with photon energy 3.06 eV (2.54 eV) generates electron-hole pairs predominantly in the (Zn,Mn)Se matrix (ZnTe QDs). The photoluminescence (PL) at 7 K in the presence of an external magnetic field exhibits an up to three-fold increase in the saturation red shift with the 2.54 eV excitation compared to the shift observed with 3.06 eV excitation. This unexpected result is attributed to multiple hole occupancy of the QD and the resulting increased penetration of the hole wavefunction tail further into the (Zn,Mn)Se matrix. The proposed model is supported by microscopic calculations which accurately include the role of hole-hole Coulomb interactions as well as the hole-Mn spin exchange interactions.
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Submitted 15 January, 2018;
originally announced January 2018.
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Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field
Authors:
Chuan Zhao,
Tenzin Norden,
Puqin Zhao,
Yingchun Cheng,
Peiyao Zhang,
Fan Sun,
Payam Taheri,
Jieqiong Wang,
Yihang Yang,
Thomas Scrace,
Kaifei Kang,
Sen Yang,
Guo-xing Miao,
Renat Sabirianov,
George Kioseoglou,
Athos Petrou,
Hao Zeng
Abstract:
Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet inequivalent valleys, offering unique opportunities for valley control through helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demons…
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Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet inequivalent valleys, offering unique opportunities for valley control through helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest, (~ 0.2 meV/T). Here we show greatly enhanced valley spitting in monolayer WSe2, utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magneto-reflectance measurements. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing MEF of a magnetic insulator can induce magnetic order, and valley and spin polarization in TMDCs, which may enable valleytronic and quantum computing applications.
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Submitted 16 October, 2016;
originally announced October 2016.
