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Challenges and Insights in Growing Epitaxial FeSn Thin Films on GaAs(111) substrate Using Molecular Beam Epitaxy
Authors:
P. Chatterjee,
M. Nord,
J. He,
D. Meier,
C. Brüne
Abstract:
FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic band structure, positioning FeSn as an ideal candidate for investigating the interplay between magnetism and topology. In this study, we investigate the epitaxial…
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FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic band structure, positioning FeSn as an ideal candidate for investigating the interplay between magnetism and topology. In this study, we investigate the epitaxial growth of FeSn thin films on GaAs(111) substrates by molecular beam epitaxy. A significant challenge in this growth process is the diffusion of Ga and As from the substrate into the deposited films and the diffusion of Fe into the substrate. This diffusion complicates the formation of a pure FeSn phase. Through a comprehensive analysis-including reflection high energy electron diffraction, high-resolution X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and vibrating sample magnetometry-we demonstrate that the Sn evaporation temperature plays a critical role in influencing the crystallinity, surface morphology, and magnetic behaviour of the films. Our results show that while it is difficult to grow a single-phase FeSn film on GaAs due to diffusion, optimizing the Sn evaporation temperature can enhance the dominance of the FeSn phase, partially overcoming these challenges.
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Submitted 28 November, 2024;
originally announced November 2024.
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Fast Pixelated Detectors in Scanning Transmission Electron Microscopy. Part II: Post Acquisition Data Processing, Visualisation, and Structural Characterisation
Authors:
Gary W. Paterson,
Robert W. H. Webster,
Andrew Ross,
Kirsty A. Paton,
Thomas A. Macgregor,
Damien McGrouther,
Ian MacLaren,
Magnus Nord
Abstract:
Fast pixelated detectors incorporating direct electron detection (DED) technology are increasingly being regarded as universal detectors for scanning transmission electron microscopy (STEM), capable of imaging under multiple modes of operation. However, several issues remain around the post acquisition processing and visualisation of the often very large multidimensional STEM datasets produced by…
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Fast pixelated detectors incorporating direct electron detection (DED) technology are increasingly being regarded as universal detectors for scanning transmission electron microscopy (STEM), capable of imaging under multiple modes of operation. However, several issues remain around the post acquisition processing and visualisation of the often very large multidimensional STEM datasets produced by them. We discuss these issues and present open source software libraries to enable efficient processing and visualisation of such datasets. Throughout, we provide examples of the analysis methodologies presented, utilising data from a 256$\times$256 pixel Medipix3 hybrid DED detector, with a particular focus on the STEM characterisation of the structural properties of materials. These include the techniques of virtual detector imaging; higher order Laue zone analysis; nanobeam electron diffraction; and scanning precession electron diffraction. In the latter, we demonstrate nanoscale lattice parameter mapping with a fractional precision $\le 6\times10^{-4}$ (0.06%).
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Submitted 22 June, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Fast Pixelated Detectors in Scanning Transmission Electron Microscopy. Part I: Data Acquisition, Live Processing and Storage
Authors:
Magnus Nord,
Robert W. H. Webster,
Kirsty A. Paton,
Stephen McVitie,
Damien McGrouther,
Ian MacLaren,
Gary W. Paterson
Abstract:
The use of fast pixelated detectors and direct electron detection technology is revolutionising many aspects of scanning transmission electron microscopy (STEM). The widespread adoption of these new technologies is impeded by the technical challenges associated with them. These include issues related to hardware control, and the acquisition, real-time processing and visualisation, and storage of d…
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The use of fast pixelated detectors and direct electron detection technology is revolutionising many aspects of scanning transmission electron microscopy (STEM). The widespread adoption of these new technologies is impeded by the technical challenges associated with them. These include issues related to hardware control, and the acquisition, real-time processing and visualisation, and storage of data from such detectors. We discuss these problems and present software solutions for them, with a view to making the benefits of new detectors in the context of STEM more accessible. Throughout, we provide examples of the application of the technologies presented, using data from a Medipix3 direct electron detector. Most of our software is available under an open source licence, permitting transparency of the implemented algorithms, and allowing the community to freely use and further improve upon them.
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Submitted 9 June, 2020; v1 submitted 18 November, 2019;
originally announced November 2019.
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Order and Disorder in the Magnetisation of the Chiral Crystal CrNb$_3$S$_6$
Authors:
Gary W. Paterson,
Tsukasa Koyama,
Misako Shinozaki,
Yusuke Masaki,
Francisco. J. T. Goncalves,
Yusuke Shimamoto,
Tadayuki Sogo,
Magnus Nord,
Yusuke Kousaka,
Yusuke Kato,
Stephen McVitie,
Yoshihiko Togawa
Abstract:
Competing magnetic anisotropies in chiral crystals with Dzyaloshinskii Moriya exchange interactions can give rise to non-trivial chiral topological magnetisation configurations with new and interesting properties. One such configuration is the magnetic soliton, where the moment continuously rotates about an axis. This magnetic system can be considered to be one dimensional and, because of this, it…
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Competing magnetic anisotropies in chiral crystals with Dzyaloshinskii Moriya exchange interactions can give rise to non-trivial chiral topological magnetisation configurations with new and interesting properties. One such configuration is the magnetic soliton, where the moment continuously rotates about an axis. This magnetic system can be considered to be one dimensional and, because of this, it supports a macroscale coherent magnetisation, giving rise to a tunable chiral soliton lattice (CSL) that is of potential use in a number of applications in nanomagnetism and spintronics. In this work we characterise the transitions between the forced-ferromagnetic (F-FM) phase and the CSL one in CrNb$_3$S$_6$ using differential phase contrast imaging in a scanning transmission electron microscope, conventional Fresnel imaging, ferromagnetic resonance spectroscopy, and mean-field modelling. We find that the formation and movement of dislocations mediate the formation of CSL and F-FM regions and that these strongly influence the highly hysteretic static and dynamic properties of the system. Sample size and morphology can be used to tailor the properties of the system and, with the application of magnetic field, to locate and stabalise normally unstable dislocations and modify their dimensions and magnetic configurations in ways beyond that predicted to occur in uniform films.
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Submitted 22 March, 2019;
originally announced March 2019.
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3D sub-nanoscale imaging of unit cell doubling due to octahedral tilting and cation modulation in strained perovskite thin films
Authors:
Magnus Nord,
Andrew Ross,
Damien McGrouther,
Juri Barthel,
Magnus Moreau,
Ingrid Hallsteinsen,
Thomas Tybell,
Ian MacLaren
Abstract:
Determining the 3-dimensional crystallography of a material with sub-nanometre resolution is essential to understanding strain effects in epitaxial thin films. A new scanning transmission electron microscopy imaging technique is demonstrated that visualises the presence and strength of atomic movements leading to a period doubling of the unit cell along the beam direction, using the intensity in a…
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Determining the 3-dimensional crystallography of a material with sub-nanometre resolution is essential to understanding strain effects in epitaxial thin films. A new scanning transmission electron microscopy imaging technique is demonstrated that visualises the presence and strength of atomic movements leading to a period doubling of the unit cell along the beam direction, using the intensity in an extra Laue zone ring in the back focal plane recorded using a pixelated detector method. This method is used together with conventional atomic resolution imaging in the plane perpendicular to the beam direction to gain information about the 3D crystal structure in an epitaxial thin film of LaFeO3 sandwiched between a substrate of (111) SrTiO3 and a top layer of La0.7Sr0.3MnO3. It is found that a hitherto unreported structure of LaFeO3 is formed under the unusual combination of compressive strain and (111) growth, which is triclinic with a periodicity doubling from primitive perovskite along one of the three <110> directions lying in the growth plane. This results from a combination of La-site modulation along the beam direction, and modulation of oxygen positions resulting from octahedral tilting. This transition to the period-doubled cell is suppressed near both the substrate and near the La0.7Sr0.3MnO3 top layer due to the clamping of the octahedral tilting by the absence of tilting in the substrate and due to an incompatible tilt pattern being present in the La0.7Sr0.3MnO3 layer. This work shows a rapid and easy way of scanning for such transitions in thin films or other systems where disorder-order transitions or domain structures may be present and does not require the use of atomic resolution imaging, and could be done on any scanning TEM instrument equipped with a suitable camera.
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Submitted 24 October, 2018; v1 submitted 17 October, 2018;
originally announced October 2018.
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Quantitative strain analysis of InAs/GaAs quantum dot materials
Authors:
Per Erik Vullum,
Magnus Nord,
Maryam Vatanparast,
Sedsel Fretheim Thomassen,
Chris Boothroyd,
Randi Holmestad,
Bjorn-Ove Fimland,
Turid Worren Reenaas
Abstract:
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nanometers into the GaAs spacer layer below and above the QD…
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Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nanometers into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
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Submitted 27 November, 2016;
originally announced November 2016.
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Assessing electron beam sensitivity for SrTiO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$ using electron energy loss spectroscopy
Authors:
Magnus Nord,
Per Erik Vullum,
Ingrid Hallsteinsen,
Thomas Tybell,
Randi Holmestad
Abstract:
Thresholds for beam damage have been assessed for La$_{0.7}$Sr$_{0.3}$MnO$_3$ and SrTiO$_3$ as a function of electron probe current and exposure time at 80 and 200 kV acceleration voltage. The materials were exposed to an intense electron probe by aberration corrected scanning transmission electron microscopy (STEM) with simultaneous acquisition of electron energy loss spectroscopy (EELS) data. El…
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Thresholds for beam damage have been assessed for La$_{0.7}$Sr$_{0.3}$MnO$_3$ and SrTiO$_3$ as a function of electron probe current and exposure time at 80 and 200 kV acceleration voltage. The materials were exposed to an intense electron probe by aberration corrected scanning transmission electron microscopy (STEM) with simultaneous acquisition of electron energy loss spectroscopy (EELS) data. Electron beam damage was identified by changes of the core loss fine structure after quantification by a refined and improved model based approach. At 200 kV acceleration voltage, damage in SrTiO$_3$ was identified by changes both in the EEL fine structure and by contrast changes in the STEM images. However, the changes in the STEM image contrast as introduced by minor damage can be difficult to detect under several common experimental conditions. No damage was observed in SrTiO$_3$ at 80 kV acceleration voltage, independent of probe current and exposure time. In La$_{0.7}$Sr$_{0.3}$MnO$_3$, beam damage was observed at both 80 and 200 kV acceleration voltages. This damage was observed by large changes in the EEL fine structure, but not by any detectable changes in the STEM images. The typical method to validate if damage has been introduced during acquisitions is to compare STEM images prior to and after spectroscopy. Quantifications in this work show that this method possibly can result in misinterpretation of beam damage as changes of material properties.
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Submitted 28 August, 2016;
originally announced August 2016.
