High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Authors:
Seungheon Shin,
Hridibrata Pal,
Jon Pratt,
John Niroula,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Tomás Palacios,
Siddharth Rajan
Abstract:
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) w…
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We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications.
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Submitted 17 April, 2025; v1 submitted 17 April, 2025;
originally announced April 2025.
Using Floating Gate Memory to Train Ideal Accuracy Neural Networks
Authors:
Sapan Agarwal,
Diana Garland,
John Niroula,
Robin B,
Jacobs-Gedrim,
Alex Hsia,
Michael S. Van Heukelom,
Elliot Fuller,
Bruce Draper,
Matthew J. Marinella
Abstract:
Floating gate SONOS (Silicon-Oxygen-Nitrogen-Oxygen-Silicon) transistors can be used to train neural networks to ideal accuracies that match those of floating point digital weights on the MNIST dataset when using multiple devices to represent a weight or within 1% of ideal accuracy when using a single device. This is enabled by operating devices in the subthreshold regime, where they exhibit symme…
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Floating gate SONOS (Silicon-Oxygen-Nitrogen-Oxygen-Silicon) transistors can be used to train neural networks to ideal accuracies that match those of floating point digital weights on the MNIST dataset when using multiple devices to represent a weight or within 1% of ideal accuracy when using a single device. This is enabled by operating devices in the subthreshold regime, where they exhibit symmetric write nonlinearities. A neural training accelerator core based on SONOS with a single device per weight would increase energy efficiency by 120X, operate 2.1X faster and require 5X lower area than an optimized SRAM based ASIC.
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Submitted 27 February, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
