Showing 1–3 of 3 results for author: Nilsson, K

Controlled growth of InAs nanowires on engineered substrates

Authors: Stefano Roddaro, Philippe Caroff, Giorgio Biasiol, Francesca Rossi, Claudio Bocchi, Kristian Nilsson, Linus Fröberg, Jakob B. Wagner, Lars Samuelson, Lars-Erik Wernersson, Lucia Sorba

Abstract: We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm μm}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires a… ▽ More We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm μm}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures. △ Less

Submitted 24 March, 2009; originally announced March 2009.

Comments: 5 pages, 5 figures, suppl.mat

Journal ref: Nanotech. 20, 285503 (2009)

Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires

Authors: O. Karlström, A. Wacker, K. Nilsson, G. Astromskas, S. Roddaro, L. Samuelson, L. -E. Wernersson

Abstract: The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, qua… ▽ More The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material. △ Less

Submitted 21 August, 2008; originally announced August 2008.

Comments: 15 pages, 6 Figures included, to appear in Nanotechnology

Journal ref: Nanotechnology 19, 435201 (2008)

InAs Nanowire MOS Capacitors

Authors: Stefano Roddaro, Kristian Nilsson, Gvidas Astromskas, Lars Samuelson, Lars-Erik Wernersson, Ovol Karlstrom, Andreas Wacker

Abstract: We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality… ▽ More We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface. △ Less

Submitted 18 June, 2008; originally announced June 2008.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 92, 253509 (2008)