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Fundamental Microscopic Properties as Predictors of Large-Scale Quantities of Interest: Validation through Grain Boundary Energy Trends
Authors:
Benjamin A. Jasperson,
Ilia Nikiforov,
Amit Samanta,
Brandon Runnels,
Harley T. Johnson,
Ellad B. Tadmor
Abstract:
Correlations between fundamental microscopic properties computable from first principles, which we term canonical properties, and complex large-scale quantities of interest (QoIs) provide an avenue to predictive materials discovery. We propose that such correlations can be efficiently discovered through simulations utilizing approximate interatomic potentials (IPs), which serve as an ensemble of "…
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Correlations between fundamental microscopic properties computable from first principles, which we term canonical properties, and complex large-scale quantities of interest (QoIs) provide an avenue to predictive materials discovery. We propose that such correlations can be efficiently discovered through simulations utilizing approximate interatomic potentials (IPs), which serve as an ensemble of "synthetic materials." As a proof of principle we build a regression model relating canonical properties to the symmetric tilt grain boundary (GB) energy curves in face-centered cubic crystals, characterized by the scaling factor in the universal lattice matching model of Runnels et al. (2016), which we take to be our QoI. Our analysis recovers known correlations of GB energy to other properties and discovers new ones. We also demonstrate, using available density functional theory (DFT) GB energy data, that the regression model constructed from IP data is consistent with DFT results, confirming the assumption that the IPs and DFT belong to same statistical pool and thereby validating the approach. Regression models constructed in this fashion can be used to predict large-scale QoIs based on first-principles data and provide a general method for training IPs for QoIs beyond the scope of first-principles calculations.
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Submitted 11 December, 2024; v1 submitted 24 November, 2024;
originally announced November 2024.
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An information-matching approach to optimal experimental design and active learning
Authors:
Yonatan Kurniawan,
Tracianne B. Neilsen,
Benjamin L. Francis,
Alex M. Stankovic,
Mingjian Wen,
Ilia Nikiforov,
Ellad B. Tadmor,
Vasily V. Bulatov,
Vincenzo Lordi,
Mark K. Transtrum
Abstract:
The efficacy of mathematical models heavily depends on the quality of the training data, yet collecting sufficient data is often expensive and challenging. Many modeling applications require inferring parameters only as a means to predict other quantities of interest (QoI). Because models often contain many unidentifiable (sloppy) parameters, QoIs often depend on a relatively small number of param…
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The efficacy of mathematical models heavily depends on the quality of the training data, yet collecting sufficient data is often expensive and challenging. Many modeling applications require inferring parameters only as a means to predict other quantities of interest (QoI). Because models often contain many unidentifiable (sloppy) parameters, QoIs often depend on a relatively small number of parameter combinations. Therefore, we introduce an information-matching criterion based on the Fisher Information Matrix to select the most informative training data from a candidate pool. This method ensures that the selected data contain sufficient information to learn only those parameters that are needed to constrain downstream QoIs. It is formulated as a convex optimization problem, making it scalable to large models and datasets. We demonstrate the effectiveness of this approach across various modeling problems in diverse scientific fields, including power systems and underwater acoustics. Finally, we use information-matching as a query function within an Active Learning loop for material science applications. In all these applications, we find that a relatively small set of optimal training data can provide the necessary information for achieving precise predictions. These results are encouraging for diverse future applications, particularly active learning in large machine learning models.
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Submitted 29 January, 2025; v1 submitted 4 November, 2024;
originally announced November 2024.
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Cross-scale covariance for material property prediction
Authors:
Benjamin A. Jasperson,
Ilia Nikiforov,
Amit Samanta,
Fei Zhou,
Ellad B. Tadmor,
Vincenzo Lordi,
Vasily V. Bulatov
Abstract:
A simulation can stand its ground against experiment only if its prediction uncertainty is known. The unknown accuracy of interatomic potentials (IPs) is a major source of prediction uncertainty, severely limiting the use of large-scale classical atomistic simulations in a wide range of scientific and engineering applications. Here we explore covariance between predictions of metal plasticity, fro…
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A simulation can stand its ground against experiment only if its prediction uncertainty is known. The unknown accuracy of interatomic potentials (IPs) is a major source of prediction uncertainty, severely limiting the use of large-scale classical atomistic simulations in a wide range of scientific and engineering applications. Here we explore covariance between predictions of metal plasticity, from 178 large-scale ($\sim 10^8$ atoms) molecular dynamics (MD) simulations, and a variety of indicator properties computed at small-scales ($\leq 10^2$ atoms). All simulations use the same 178 IPs. In a manner similar to statistical studies in public health, we analyze correlations of strength with indicators, identify the best predictor properties, and build a cross-scale ``strength-on-predictors'' regression model. This model is then used to quantify uncertainty over the statistical pool of IPs. Small-scale predictors found to be highly covariant with strength are computed using expensive quantum-accurate calculations and used to predict flow strength, within the uncertainty bounds established in our statistical study.
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Submitted 29 May, 2024;
originally announced June 2024.
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Automated determination of grain boundary energy and potential-dependence using the OpenKIM framework
Authors:
Brendon Waters,
Daniel S. Karls,
Ilia Nikiforov,
Ryan S. Elliott,
Ellad B. Tadmor,
Brandon Runnels
Abstract:
We present a systematic methodology, built within the Open Knowledgebase of Interatomic Models (OpenKIM) framework (https://openkim.org), for quantifying properties of grain boundaries (GBs) for arbitrary interatomic potentials (IPs), GB character, and lattice structure and species. The framework currently generates results for symmetric tilt GBs in cubic materials, but can be readily extended to…
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We present a systematic methodology, built within the Open Knowledgebase of Interatomic Models (OpenKIM) framework (https://openkim.org), for quantifying properties of grain boundaries (GBs) for arbitrary interatomic potentials (IPs), GB character, and lattice structure and species. The framework currently generates results for symmetric tilt GBs in cubic materials, but can be readily extended to other types of boundaries. In this paper, GB energy data are presented that were generated automatically for Al, Ni, Cu, Fe, and Mo with 225 IPs; the system is installed on openkim.org and will continue to generate results for all new IPs uploaded to OpenKIM. The results from the atomistic calculations are compared to the lattice matching model, which is a semi-analytic geometric model for approximating GB energy. It is determined that the energy predicted by all IPs (that are stable for the given boundary type) correlate closely with the energy from the model, up to a multiplicative factor. It thus is concluded that the qualitative form of the GB energy versus tilt angle is dominated more by geometry than the choice of IP, but that the IP can strongly affect the energy level. The spread in GB energy predictions across the ensemble of IPs in OpenKIM provides a measure of uncertainty for GB energy predictions by classical IPs.
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Submitted 10 February, 2023; v1 submitted 22 December, 2022;
originally announced December 2022.
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Spin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance
Authors:
A. F. Zinovieva,
N. P. Stepina,
A. I. Nikiforov,
A. V. Nenashev,
A. V. Dvurechenskii,
L. V. Kulik,
N. A. Sobolev,
M. C. Carmo
Abstract:
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase the spin relaxation time in the system. Created structures allow us to change an effective localization radius of electrons by external magnetic field.…
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Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase the spin relaxation time in the system. Created structures allow us to change an effective localization radius of electrons by external magnetic field. With the localization radius close to the size of a quantum dot group, we obtain fourfold increasing spin relaxation time $T_1$, as compared to conventional homogeneous quantum dot arrays. This effect is attributed to averaging of local magnetic fields related to nuclear spins $^{29}$Si and stabilization of $S_z$-polarization during electron back-and-forth motion within a quantum dot group.
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Submitted 11 November, 2013;
originally announced November 2013.
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Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder
Authors:
N. P. Stepina,
E. S. Koptev,
A. G. Pogosov,
A. V. Dvurechenskii,
A. I. Nikiforov,
E. Yu. Zhdanov,
Y. M. Galperin
Abstract:
Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found to be similar for all samples - it is negative in weak fields and becomes positive with increase of magnetic field. The result apparently contradicts to existing…
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Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found to be similar for all samples - it is negative in weak fields and becomes positive with increase of magnetic field. The result apparently contradicts to existing theories. To explain experimental data we suggest that clusters of overlapping quantum dots are formed. These clusters are assumed to have metal-like conductance, the charge transfer taking place via hopping between the clusters. Relatively strong magnetic field shrinks electron wave functions decreasing inter-cluster hopping and, therefore, leading to a positive magnetoresistance. Weak magnetic field acts on "metallic" clusters destroying interference of electron wave function corresponding to different paths (weak localization) inside clusters. The interference may be restricted either by inelastic processes, or by the cluster size. Taking into account WL inside clusters and hopping between them within the effective medium approximation we extract effective parameters characterizing charge (magneto) transport.
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Submitted 2 September, 2013;
originally announced September 2013.
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Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods
Authors:
I. L. Drichko,
A. M. Diakonov,
V. A. Malysh,
I. Yu. Smirnov,
E. S. Koptev,
A. I. Nikiforov,
N. P. Stepina,
Y. M. Galperin,
J. Bergli
Abstract:
Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main…
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Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.
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Submitted 15 March, 2012;
originally announced March 2012.
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AC Conductance in Dense Array of the Ge$_{0.7}$Si$_{0.3}$ Quantum Dots in Si
Authors:
I. L. Drichko,
A. M. Diakonov,
I. Yu. Smirnov,
A. V. Suslov,
Y. M. Galperin,
A. I. Yakimov,
A. I. Nikiforov
Abstract:
Complex AC-conductance, $σ^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $ΔΓ=Γ(H)-Γ(0)$, and velocity, $ΔV /V=(V(H)-V(0)) / V(0)$, of surface acoustic waves (SAW) with frequencies $f$ = 30-300 MHz as functions of transverse magnetic field $H \leq$ 18 T in the temperature range $T$ = 1-20 K. I…
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Complex AC-conductance, $σ^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $ΔΓ=Γ(H)-Γ(0)$, and velocity, $ΔV /V=(V(H)-V(0)) / V(0)$, of surface acoustic waves (SAW) with frequencies $f$ = 30-300 MHz as functions of transverse magnetic field $H \leq$ 18 T in the temperature range $T$ = 1-20 K. It has been shown that in the sample with dopant (B) concentration 8.2$ \times 10^{11}$ cm$^{-2}$ at temperatures $T \leq$4 K the AC conductivity is dominated by hopping between states localized in different QDs. The observed power-law temperature dependence, $σ_1(H=0)\propto T^{2.4}$, and weak frequency dependence, $σ_1(H=0)\propto ω^0$, of the AC conductivity are consistent with predictions of the two-site model for AC hopping conductivity for the case of $ωτ_0 \gg $1, where $ω=2πf$ is the SAW angular frequency and $τ_0$ is the typical population relaxation time. At $T >$ 7 K the AC conductivity is due to thermal activation of the carriers (holes) to the mobility edge. In intermediate temperature region 4$ < T<$ 7 K, where AC conductivity is due to a combination of hops between QDs and diffusion on the mobility edge, one succeeded to separate both contributions. Temperature dependence of hopping contribution to the conductivity above $T^*\sim$ 4.5 K saturates, evidencing crossover to the regime where $ωτ_0 < $1. From crossover condition, $ωτ_0(T^*)$ = 1, the typical value, $τ_0$, of the relaxation time has been determined.
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Submitted 30 June, 2005;
originally announced June 2005.
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AC-Hopping Conductance of Self-Organized Ge/Si Quantum Dot Arrays
Authors:
Irina L. Drichko,
Andrey M. Diakonov,
Veniamin I. Kozub,
Ivan Yu. Smirnov,
Yuri M. Galperin,
Andrew I. Yakimov,
Alexander I. Nikiforov
Abstract:
Dense ($n=4 \times 10^{11}$ cm$^{-2}$) arrays of Ge quantum dots in Si host were studied using attenuation of surface acoustic waves (SAWs) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, $ΔΓ=Γ(ω, H)-Γ(ω, 0)$, and change of velocity of SAW, $ΔV /V=(V(H)-V(0)) / V(0)$, were measured in the temperature interval $T$ = 1.5-4.…
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Dense ($n=4 \times 10^{11}$ cm$^{-2}$) arrays of Ge quantum dots in Si host were studied using attenuation of surface acoustic waves (SAWs) propagating along the surface of a piezoelectric crystal located near the sample. The SAW magneto-attenuation coefficient, $ΔΓ=Γ(ω, H)-Γ(ω, 0)$, and change of velocity of SAW, $ΔV /V=(V(H)-V(0)) / V(0)$, were measured in the temperature interval $T$ = 1.5-4.2 K as a function of magnetic field $H$ up to 6 T for the waves in the frequency range $f$ = 30-300 MHz. Basing on the dependences of $ΔΓ$ on $H$, $T$ and $ω$, as well as on its sign, we believe that the AC conduction mechanism is a combination of diffusion at the mobility edge with hopping between localized states at the Fermi level. The measured magnetic field dependence of the SAW attenuation is discussed basing on existing theoretical concepts.
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Submitted 12 November, 2003;
originally announced November 2003.