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Thermal transport evolution due to nanostructural transformations in Ga-doped indium-tin-oxide thin films
Authors:
Alexandr Cocemasov,
Vladimir Brinzari,
Do-Gyeom Jeong,
Ghenadii Korotcenkov,
Sergiu Vatavu,
Jong S. Lee,
Denis L. Nika
Abstract:
We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-Ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15-20 at. % Ga from the nanocrystalline to the amorphous phase. Room tempe…
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We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-Ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15-20 at. % Ga from the nanocrystalline to the amorphous phase. Room temperature femtosecond time domain thermoreflectance measurements showed nonlinear decrease of thermal conductivity in the range 2.0-0.5 W/(m K) depending on Ga doping level. Comparing density functional theory calculations with XRD data it was found that Ga atoms substitute In atoms in the ITO nanocrystals retaining Ia-3 space group symmetry. The calculated phonon dispersion relations revealed that Ga doping leads to the appearance of hybridized metal atom vibrations with avoided-crossing behavior. These hybridized vibrations possess shortened mean free paths and are the main reason behind the thermal conductivity drop in nanocrystalline phase. An evolution from propagative to diffusive phonon thermal transport in ITO:Ga with 15-20 at. % of Ga was established. The suppressed thermal conductivity of ITO:Ga thin films deposited by spray pyrolysis may be crucial for their thermoelectric applications.
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Submitted 30 April, 2021;
originally announced May 2021.
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Phonons and thermal transport in Si/SiO$_2$ multishell nanotubes: Atomistic study
Authors:
C. Isacova,
A. Cocemasov,
D. L. Nika,
V. M. Fomin
Abstract:
Thermal transport in the Si/SiO$_2$ multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic Lattice Dynamics approach. Thermal conductivity is calculated using the Boltzmann transport equation within the relaxation time approximation. Redistribution of the vibrational spectra in multishell nanotubes leads to a decrease of the phonon group velo…
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Thermal transport in the Si/SiO$_2$ multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic Lattice Dynamics approach. Thermal conductivity is calculated using the Boltzmann transport equation within the relaxation time approximation. Redistribution of the vibrational spectra in multishell nanotubes leads to a decrease of the phonon group velocity and the thermal conductivity as compared to homogeneous Si nanowires. Phonon scattering on the Si/SiO$_2$ interfaces is another key factor of strong reduction of the thermal conductivity in these structures (down to 0.2 W/mK at room temperature). We demonstrate that phonon thermal transport in Si/SiO$_2$ nanotubes can be efficiently suppressed by a proper choice of nanotube's geometrical parameters: lateral cross-section, thickness and number of shells.
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Submitted 28 April, 2021; v1 submitted 12 November, 2020;
originally announced November 2020.
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Energetic, structural and electronic features of Sn-, Ga-, O-based defect complexes in cubic In2O3
Authors:
Alexandr I. Cocemasov,
Vladimir I. Brinzari,
Denis L. Nika
Abstract:
Defect energy formation, lattice distortions and electronic structure of cubic In2O3 with Sn, Ga and O impurities were theoretically investigated using density functional theory. Different types of point defects, consisting of 1 to 4 atoms of Sn, Ga and O in both substitutional and interstitial (structural vacancy) positions, were examined. It was demonstrated, that formation of substitutional Ga…
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Defect energy formation, lattice distortions and electronic structure of cubic In2O3 with Sn, Ga and O impurities were theoretically investigated using density functional theory. Different types of point defects, consisting of 1 to 4 atoms of Sn, Ga and O in both substitutional and interstitial (structural vacancy) positions, were examined. It was demonstrated, that formation of substitutional Ga and Sn defects are spontaneous, while formation of interstitial defects requires an activation energy. The donor-like behavior of interstitial Ga defects with splitting of conduction band into two subbands with light and heavy electrons, respectively, was revealed. Contrarily, interstitial O defects demonstrate acceptor-like behavior with the formation of acceptor levels or subbands inside the band gap. The obtained results are important for an accurate description of transport phenomena in In2O3 with substitutional and interstitial defects.
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Submitted 5 February, 2020;
originally announced February 2020.
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Thermal transport in semiconductor nanostructures, graphene and related two-dimensional materials
Authors:
Alexandr I. Cocemasov,
Calina I. Isacova,
Denis L. Nika
Abstract:
We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon ene…
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We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon energy spectra modification on the thermal conductivity in semiconductor nanostructures is revealed. The dependence of thermal conductivity in graphene and related two-dimensional (2D) materials on temperature, flake size, defect concentration, edge roughness and strain is analyzed.
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Submitted 14 March, 2018;
originally announced March 2018.
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Ultra-low Thermal Conductivity of Nanogranular Indium Tin Oxide Films Deposited by Spray Pyrolysis
Authors:
Vladimir I. Brinzari,
Alexandr I. Cocemasov,
Denis L. Nika,
Ghenadii S. Korotcenkov
Abstract:
The authors have shown that nanogranular indium tin oxide (ITO) films, deposited by spray pyrolysis on silicon substrate, demonstrate ultralow thermal conductivity ~ 0.84 +/-0.12 Wm-1K-1 at room temperature. This value is approximately by one order of magnitude lower than that in bulk ITO. The strong drop of thermal conductivity is explained by nanogranular structure and porosity of ITO films, res…
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The authors have shown that nanogranular indium tin oxide (ITO) films, deposited by spray pyrolysis on silicon substrate, demonstrate ultralow thermal conductivity ~ 0.84 +/-0.12 Wm-1K-1 at room temperature. This value is approximately by one order of magnitude lower than that in bulk ITO. The strong drop of thermal conductivity is explained by nanogranular structure and porosity of ITO films, resulting in enhanced phonon scattering on grain boundaries. The experimental results were interpreted theoretically, employing Boltzmann transport equation approach for phonon transport and filtering model for electronic transport. The calculated values of thermal conductivity are in a reasonable agreement with the experimental findings. The presented results show that ITO films with optimal nanogranular structure may be prospective for thermoelectric applications.
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Submitted 13 February, 2017;
originally announced February 2017.
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Direct Observation of Acoustic Phonon Confinement in Free-Standing Semiconductor Nanowires
Authors:
Fariborz Kargar,
Bishwajit Debnath,
Kakko Joona-Pekko,
Antti Saynatjoki,
Harri Lipsanen,
Denis Nika,
Roger Lake,
Alexander A. Balandin
Abstract:
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density - referred to as phononic crystals - has been proven experimentally and utilized in practical applications. A possibility of modifying acoustic phonon spectrum in indivi…
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Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density - referred to as phononic crystals - has been proven experimentally and utilized in practical applications. A possibility of modifying acoustic phonon spectrum in individual nanostructures via spatial confinement would bring tremendous benefits for controlling phonon-electron interaction and thermal conduction at nanoscale. However, despite strong scientific and practical importance, conclusive experimental evidence of acoustic phonon confinement in individual free-standing nanostructures, e.g. nanowires, is still missing. The length scale, at which phonon dispersion undergoes changes and a possibility of the phonon group velocity reduction, are debated. Here, we utilize specially designed high-quality GaAs nanowires (NWs) with different diameters, D, and large inter-nanowire distances to directly demonstrate acoustic phonon confinement. The measurements conducted with Brillouin - Mandelstam spectroscopy reveal confined phonon polarization branches with frequencies from 4 GHz to 40 GHz in NWs with D as large as ~128 nm, i.e. at length scale, which exceeds the "grey" phonon mean-free path in GaAs by an almost an order of magnitude. The phonon dispersion modification and phonon energy scaling with D in individual nanowires are in excellent agreement with theory. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronics, thermoelectric energy conversion, thermal management, and novel spintronic technologies.
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Submitted 29 August, 2016;
originally announced August 2016.
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Phonons and Thermal Transport in Graphene and Graphene-Based Materials
Authors:
Denis L. Nika,
Alexander A. Balandin
Abstract:
A discovery of the unusual thermal properties of graphene stimulated experimental, theoretical and computational research directed at understanding phonon transport and thermal conduction in two-dimensional material systems. We provide a critical review of recent results in the graphene thermal field focusing on phonon dispersion, specific heat, thermal conductivity, and comparison of different mo…
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A discovery of the unusual thermal properties of graphene stimulated experimental, theoretical and computational research directed at understanding phonon transport and thermal conduction in two-dimensional material systems. We provide a critical review of recent results in the graphene thermal field focusing on phonon dispersion, specific heat, thermal conductivity, and comparison of different models and computational approaches. The correlation between the phonon spectrum in graphene-based materials and the heat conduction properties is analyzed in details. The effects of the atomic plane rotations in bilayer graphene, isotope engineering, and relative contributions of different phonon dispersion branches are discussed. For readers' convenience, the summaries of main experimental and theoretical results on thermal conductivity as well as phonon mode contributions to thermal transport are provided in the form of comprehensive annotated tables.
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Submitted 1 June, 2016;
originally announced June 2016.
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Breakdown Current Density in BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications
Authors:
Maxim A. Stolyarov,
Guanxiong Liu,
Matthew A. Bloodgood,
Ece Aytan,
Chenglong Jiang,
Rameez Samnakay,
Tina T. Salguero,
Denis L. Nika,
Krassimir N. Bozhilov,
Alexander A. Balandin
Abstract:
We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaS…
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We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA/cm2 - an order-of-magnitude higher than that in copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in low surface roughness and the absence of grain boundaries; these features potentially can enable the downscaling of these wires to lateral dimensions in the few-nm range. These results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.
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Submitted 11 April, 2016;
originally announced April 2016.
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Thermal Conductivity of Suspended Graphene with Defects
Authors:
Hoda Malekpour,
Pankaj Ramnani,
Srilok Srinivasan,
Ganesh Balasubramanian,
Denis L. Nika,
Ashok Mulchandani,
Roger Lake,
Alexander A. Balandin
Abstract:
We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. Graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5-micrometer size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (…
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We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. Graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5-micrometer size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0x10^10 cm-2 to 1.8x10^11 cm-2 the thermal conductivity decreases from ~(1.8+/-0.2)x10^3 W/mK to ~(4.0+/-0.2)x10^2 W/mK near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation behavior at a relatively high value of ~400 W/mK. The thermal conductivity dependence on defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.
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Submitted 16 March, 2016;
originally announced March 2016.
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Thermal Conductivity of Segmented Nanowires
Authors:
Denis L. Nika,
Aleksandr I. Cocemasov,
Alexander A. Balandin
Abstract:
We present a review of the phonon thermal conductivity of segmented nanowires focusing on theoretical results for Si and Si/Ge structures with the constant and periodically modulated cross-sections. We describe the use of the face-centered cubic cell and Born-von Karman models of the lattice vibrations for calculating the phonon energy spectra in the segmented nanowires. Modification of the phonon…
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We present a review of the phonon thermal conductivity of segmented nanowires focusing on theoretical results for Si and Si/Ge structures with the constant and periodically modulated cross-sections. We describe the use of the face-centered cubic cell and Born-von Karman models of the lattice vibrations for calculating the phonon energy spectra in the segmented nanowires. Modification of the phonon spectrum in such nanostructures results in strong reduction of the phonon thermal conductivity and suppression of heat transfer due to a trapping of phonon modes in nanowire segments. Possible practical applications of segmented nanowires in thermoelectric energy generation are also discussed.
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Submitted 25 February, 2016;
originally announced February 2016.
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Thermal Transport in Graphene, Few-Layer Graphene and Graphene Nanoribbons
Authors:
Denis L. Nika,
Alexander A. Balandin
Abstract:
The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from theoretical physics to practical engineering applications. In this invited review we outline different theoretical approaches developed for describing phonon trans…
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The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from theoretical physics to practical engineering applications. In this invited review we outline different theoretical approaches developed for describing phonon transport in graphene and provide comparison with available experimental thermal conductivity data. A special attention is given to analysis of the recent theoretical results for the phonon thermal conductivity of graphene and few-layer graphene, the effects of the strain, defects, isotopes and edge scattering on the acoustic phonon transport in these material systems.
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Submitted 29 January, 2016;
originally announced January 2016.
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Phonon Engineering of the Specific Heat of Twisted Bilayer Graphene: The Role of the Out-of-Plane Phonon Modes
Authors:
Alexandr I. Cocemasov,
Denis L. Nika,
Alexander A. Balandin
Abstract:
We investigated theoretically the specific heat of graphene, bilayer graphene and twisted bilayer graphene taking into account the exact phonon dispersion and density of states for each polarization branch. It is shown that contrary to a conventional believe the dispersion of the out-of-plane acoustic phonons - referred to as ZA phonons - deviates strongly from a parabolic law starting from the fr…
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We investigated theoretically the specific heat of graphene, bilayer graphene and twisted bilayer graphene taking into account the exact phonon dispersion and density of states for each polarization branch. It is shown that contrary to a conventional believe the dispersion of the out-of-plane acoustic phonons - referred to as ZA phonons - deviates strongly from a parabolic law starting from the frequencies as low as ~100 1/cm. This leads to the frequency-dependent ZA phonon density of states and the breakdown of the linear dependence of the specific heat on temperature T. We established that ZA phonons determine the specific heat for T<200 K while contributions from both in-plane and out-of-plane acoustic phonons are dominant for 200 K < T < 500 K. In the high-temperature limit, T>1000 K, the optical and acoustic phonons contribute approximately equally to the specific heat. The Debye temperature for graphene and twisted bilayer graphene was calculated to be around ~1861 - 1864 K. Our results suggest that the thermodynamic properties of materials such as bilayer graphene can be controlled at the atomic scale by rotation of the sp2-carbon planes.
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Submitted 28 March, 2015;
originally announced March 2015.
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Anisotropy of Thermal Conductivity of Free-Standing Reduced Graphene Oxide Films Annealed at High Temperature
Authors:
J. D. Renteria,
S. Ramirez,
H. Malekpour,
B. Alonso,
A. Centeno,
A. Zurutuza,
A. I. Cocemasov,
D. L. Nika,
A. A. Balandin
Abstract:
We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal conductivity, K, of the films from 3 W/mK to 61 W/mK at room temperature. The cross-plane thermal conductivity, Kc, revealed an interesting opposite trend of decreas…
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We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal conductivity, K, of the films from 3 W/mK to 61 W/mK at room temperature. The cross-plane thermal conductivity, Kc, revealed an interesting opposite trend of decreasing to a very small value of 0.09 W/mK in the reduced graphene oxide films annealed at 1000 C. The obtained films demonstrated an exceptionally strong anisotropy of the thermal conductivity, K/Kc ~ 675, which is substantially larger even than in the high-quality graphite. The electrical resistivity of the annealed films reduced to 1 - 19 Ohms/sq. The observed modifications of the in-plane and cross-plane thermal conductivity components resulting in an unusual K/Kc anisotropy were explained theoretically. The theoretical analysis suggests that K can reach as high as ~500 W/mK with the increase in the sp2 domain size and further reduction of the oxygen content. The strongly anisotropic heat conduction properties of these films can be useful for applications in thermal management.
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Submitted 24 March, 2015;
originally announced March 2015.
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Thermal Transport in Graphene and Graphene Multilayers
Authors:
Alexander A. Balandin,
Denis L. Nika
Abstract:
In this paper we review thermal properties of graphene and multilayer graphene and discuss the optothermal technique developed for the thermal conductivity measurements. We also outline different theoretical approaches used for the description of phonon transport in graphene and provide comparison with available experimental thermal conductivity data.
In this paper we review thermal properties of graphene and multilayer graphene and discuss the optothermal technique developed for the thermal conductivity measurements. We also outline different theoretical approaches used for the description of phonon transport in graphene and provide comparison with available experimental thermal conductivity data.
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Submitted 6 March, 2015;
originally announced March 2015.
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Review of Thermal Properties of Graphene and Few-Layer Graphene: Applications in Electronics
Authors:
Zhong Yan,
Denis L. Nika,
Alexander A. Balandin
Abstract:
We review thermal properties of graphene and few-layer graphene, and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known materials - is dominated by phonons near the room temperature. The examples of thermal management applications include the few-layer graphene heat spreaders integrated…
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We review thermal properties of graphene and few-layer graphene, and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known materials - is dominated by phonons near the room temperature. The examples of thermal management applications include the few-layer graphene heat spreaders integrated near the heat generating areas of the high-power density transistors. It has been demonstrated that few-layer graphene heat spreaders can lower the hot-spot temperature during device operation resulting in improved performance and reliability of the devices.
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Submitted 5 March, 2015;
originally announced March 2015.
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Thermal Conductivity of Graphene Laminate: Making Plastic Thermally Conductive
Authors:
H. Malekpour,
K. -H. Chang,
J. -C. Chen,
C. -Y. Lu,
D. L. Nika,
K. S. Novoselov,
A. A. Balandin
Abstract:
We have investigated thermal conductivity of graphene laminate films deposited on polyethylene terephthalate substrates. Two types of graphene laminate were studied - as deposited and compressed - in order to determine the physical parameters affecting the heat conduction the most. The measurements were performed using the optothermal Raman technique and a set of suspended samples with the graphen…
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We have investigated thermal conductivity of graphene laminate films deposited on polyethylene terephthalate substrates. Two types of graphene laminate were studied - as deposited and compressed - in order to determine the physical parameters affecting the heat conduction the most. The measurements were performed using the optothermal Raman technique and a set of suspended samples with the graphene laminate thickness from 9 to 44 micrometers. The thermal conductivity of graphene laminate was found to be in the range from 40 W/mK to 90 W/mK at room temperature. It was found unexpectedly that the average size and the alignment of graphene flakes are more important parameters defining the heat conduction than the mass density of the graphene laminate. The thermal conductivity scales up linearly with the average graphene flake size in both uncompressed and compressed laminates. The compressed laminates have higher thermal conductivity for the same average flake size owing to better flake alignment. The possibility of up to 600X enhancement of the thermal conductivity of plastic materials by coating them with the thin graphene laminate films has important practical implications.
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Submitted 5 July, 2014;
originally announced July 2014.
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Specific Heat of Twisted Bilayer Graphene
Authors:
Denis L. Nika,
Alexandr I. Cocemasov,
Alexander A. Balandin
Abstract:
We have studied the phonon specific heat in single-layer, bilayer and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T<15 K, specific heat varies with temperature as T^n, where n = 1 for graphene,…
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We have studied the phonon specific heat in single-layer, bilayer and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T<15 K, specific heat varies with temperature as T^n, where n = 1 for graphene, n = 1.6 for bilayer graphene and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.
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Submitted 9 May, 2014;
originally announced May 2014.
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Thermal Conductivity Inhibition in Phonon Engineered Core-Shell Cross-Section Modulated Si/Ge Nanowires
Authors:
Denis L. Nika,
Alexandr I. Cocemasov,
Dmitrii V. Crismari,
Alexander A. Balandin
Abstract:
We have shown theoretically that a combination of cross-section modulation and acoustic mismatch in the core-shell Si/Ge nanowires can lead to a drastic reduction of the thermal conductivity. Our calculations, which utilized two different models - five-parameter Born-von Karman and six-parameter valence-force field - for the lattice vibrations, indicate that the room temperature thermal conductivi…
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We have shown theoretically that a combination of cross-section modulation and acoustic mismatch in the core-shell Si/Ge nanowires can lead to a drastic reduction of the thermal conductivity. Our calculations, which utilized two different models - five-parameter Born-von Karman and six-parameter valence-force field - for the lattice vibrations, indicate that the room temperature thermal conductivity of Si/Ge cross-section modulated nanowires is almost three orders of magnitude lower than that of bulk Si. Thermal flux in the modulated nanowires is suppressed by an order of magnitude in comparison with generic Si nanowires. The effect is explained by modification of the phonon spectra in modulated nanowires leading to decrease of the phonon group velocities and localization of certain phonon modes in narrow or wide nanowire segments. The thermal conductivity inhibition is achieved in nanowires without additional surface roughness and, thus, potentially reducing degradation of the electron transport. Our results suggest that the acoustically mismatched cross-section modulated nanowires are promising candidates for thermoelectric applications.
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Submitted 16 May, 2013;
originally announced May 2013.
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Phonons in Twisted Bilayer Graphene
Authors:
Alexandr I. Cocemasov,
Denis L. Nika,
Alexander A. Balandin
Abstract:
We theoretically investigated phonon dispersion in AA-stacked, AB-stacked and twisted bilayer graphene with various rotation angles. The calculations were performed using the Born-von-Karman model for the intra-layer atomic interactions and the Lennard-Jones potential for the inter-layer interactions. It was found that the stacking order affects the out-of-plane acoustic phonon modes the most. The…
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We theoretically investigated phonon dispersion in AA-stacked, AB-stacked and twisted bilayer graphene with various rotation angles. The calculations were performed using the Born-von-Karman model for the intra-layer atomic interactions and the Lennard-Jones potential for the inter-layer interactions. It was found that the stacking order affects the out-of-plane acoustic phonon modes the most. The difference in the phonon densities of states in the twisted bilayer graphene and in AA- or AB-stacked bilayer graphene appears in the phonon frequencies range 90 - 110 1/cm. Twisting bilayer graphene leads to emergence of new phonon branches - termed entangled phonons - which originate from mixing of phonon modes from different high-symmetry directions in the Brillouin zone. The frequencies of the entangled phonon depend strongly on the rotation angle and can be used for non-contact identification of the twist angles in graphene samples. The obtained results and tabulated frequencies of phonons in twisted bilayer graphene are important for interpretation of experimental Raman data and determining thermal conductivity of these materials systems.
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Submitted 6 May, 2013;
originally announced May 2013.
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Phononics in Low-Dimensions: Engineering Phonons in Nanostructures and Graphene
Authors:
Alexander A. Balandina,
Denis L. Nika
Abstract:
Phonons - quanta of crystal lattice vibrations - reveal themselves in all electrical, thermal and optical phenomena in materials. Nanostructures open exciting opportunities for tuning the phonon energy spectrum and related properties of materials for specific applications. The possibilities for controlled modification of the phonon transport and phonon interactions - referred to as phonon engineer…
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Phonons - quanta of crystal lattice vibrations - reveal themselves in all electrical, thermal and optical phenomena in materials. Nanostructures open exciting opportunities for tuning the phonon energy spectrum and related properties of materials for specific applications. The possibilities for controlled modification of the phonon transport and phonon interactions - referred to as phonon engineering or phononics - increase even further with the advent of graphene and two-dimensional van der Waals materials. We describe methods for tuning the phonon spectrum and controlling the thermal properties of the low-dimensional materials via ribbon edges, grain boundaries, isotope composition, defect concentration, and atomic-plane orientation.
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Submitted 19 November, 2012;
originally announced November 2012.
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Anomalous Size Dependence of the Thermal Conductivity of Graphene Ribbons
Authors:
Denis L. Nika,
Artur S. Askerov,
Alexander A. Balandin
Abstract:
We investigated the thermal conductivity K of graphene ribbons and graphite slabs as the function of their lateral dimensions. Our theoretical model considered the anharmonic three-phonon processes to the second-order and included the angle-dependent phonon scattering from the ribbon edges. It was found that the long mean free path of the long-wavelength acoustic phonons in graphene can lead to an…
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We investigated the thermal conductivity K of graphene ribbons and graphite slabs as the function of their lateral dimensions. Our theoretical model considered the anharmonic three-phonon processes to the second-order and included the angle-dependent phonon scattering from the ribbon edges. It was found that the long mean free path of the long-wavelength acoustic phonons in graphene can lead to an unusual non-monotonic dependence of the thermal conductivity on the length L of a ribbon. The effect is pronounced for the ribbons with the smooth edges (specularity parameter p>0.5). Our results also suggest that - contrary to what was previously thought - the bulk-like 3D phonons in graphite can make a rather substantial contribution to its in-plane thermal conductivity. The Umklapp-limited thermal conductivity of graphite slabs scales, for L below ~ 10 micrometers, as log(L) while for larger L, the thermal conductivity approaches a finite value following the dependence K_0 - A\timesL^-1/2, where K_0 and A are parameters independent of the length. Our theoretical results clarify the scaling of the phonon thermal conductivity with the lateral sizes in graphene and graphite. The revealed anomalous dependence K(L) for the micrometer-size graphene ribbons can account for some of the discrepancy in reported experimental data for graphene.
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Submitted 25 May, 2012;
originally announced May 2012.
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Phonon Transport in Graphene
Authors:
Denis L. Nika,
Alexander A. Balandin
Abstract:
Properties of phonons - quanta of the crystal lattice vibrations - in graphene have attracted strong attention of the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically and experimentall…
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Properties of phonons - quanta of the crystal lattice vibrations - in graphene have attracted strong attention of the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically and experimentally that transport properties of phonons, i.e. energy dispersion and scattering rates, are substantially different in the quasi two-dimensional system such as graphene compared to basal planes in graphite or three-dimensional bulk crystals. The unique nature of two-dimensional phonon transport translates to unusual heat conduction in graphene and related materials. In this review we outline different theoretical approaches developed for phonon transport in graphene, discuss contributions of the in-plane and cross-plane phonon modes and provide comparison with available experimental thermal conductivity data. Particular attention is given to analysis of recent theoretical results for the phonon thermal conductivity of graphene and few-layer graphene, and the effects of the strain, defects and isotopes on the phonon transport in these systems.
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Submitted 19 March, 2012;
originally announced March 2012.
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Dimensional crossover of thermal transport in few-layer graphene materials
Authors:
Suchismita Ghosh,
Wenzhong Bao,
Denis L. Nika,
Samia Subrina,
Evghenii P. Pokatilov,
Chun Ning Lau,
Alexander A. Balandin
Abstract:
Graphene, in addition to its unique electronic and optical properties, revealed unusually high thermal conductivity. The fact that thermal conductivity of large enough graphene sheets should be higher than that of basal planes of bulk graphite was predicted theoretically by Klemens. However, the exact mechanisms behind drastic alteration of material's intrinsic ability to conduct heat as its dimen…
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Graphene, in addition to its unique electronic and optical properties, revealed unusually high thermal conductivity. The fact that thermal conductivity of large enough graphene sheets should be higher than that of basal planes of bulk graphite was predicted theoretically by Klemens. However, the exact mechanisms behind drastic alteration of material's intrinsic ability to conduct heat as its dimensionality changes from 2-D to 3-D remain elusive. Recent availability of high-quality few-layer graphene materials allowed us to study dimensional crossover experimentally. Here we show that the room-temperature thermal conductivity changes from K~3000 W/mK to 1500 W/mK as the number of atomic plains in few-layer graphene increases from 2 to 4. We explained the observed evolution from 2-D to bulk by the cross-plane coupling of the low-energy phonons and corresponding changes in the phonon Umklapp scattering. The obtained results shed light on heat conduction in low-dimensional materials and may open up few-layer graphene applications in thermal management of nanoelectronics.
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Submitted 26 March, 2010;
originally announced March 2010.
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Thermal conductivity of graphene flakes: Comparison with bulk graphite
Authors:
D. L. Nika,
S. Ghosh,
E. P. Pokatilov,
A. A. Balandin
Abstract:
The authors proposed a simple model for the lattice thermal conductivity of graphene in the framework of Klemens approximation. The Gruneisen parameters were introduced separately for the longitudinal and transverse phonon branches through averaging over phonon modes obtained from the first-principles. The calculations show that Umklapp-limited thermal conductivity of graphene grows with the inc…
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The authors proposed a simple model for the lattice thermal conductivity of graphene in the framework of Klemens approximation. The Gruneisen parameters were introduced separately for the longitudinal and transverse phonon branches through averaging over phonon modes obtained from the first-principles. The calculations show that Umklapp-limited thermal conductivity of graphene grows with the increasing linear dimensions of graphene flakes and can exceed that of the basal planes of bulk graphite when the flake size is on the order of few micrometers. The obtained results are in agreement with experimental data and reflect the two-dimensional nature of phonon transport in graphene.
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Submitted 3 April, 2009;
originally announced April 2009.
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Comment on 'First principles calculation of lattice thermal conductivity in mono- and bi-layer graphene' (arXiv:0902.0642)
Authors:
A. A. Balandin,
D. L. Nika,
E. P. Pokatilov,
A. S. Askerov
Abstract:
In a recent preprint Kong et al, arXiv:0902.0642v1 (2009) claimed to calculate the lattice thermal conductivity of single and bi-layer graphene 'from first principles'. The main findings were that the Umklapp-limited thermal conductivity is only slightly higher than that of high-quality bulk graphite along the basal plane, and that it does not strongly depend on the number of atomic layers. Here…
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In a recent preprint Kong et al, arXiv:0902.0642v1 (2009) claimed to calculate the lattice thermal conductivity of single and bi-layer graphene 'from first principles'. The main findings were that the Umklapp-limited thermal conductivity is only slightly higher than that of high-quality bulk graphite along the basal plane, and that it does not strongly depend on the number of atomic layers. Here we explain that the calculation of Kong et al used a truncation procedure with a 'hidden' parameter, a cut-off frequency for the long-wavelength acoustic phonons, which essentially determined the final result. Unlike in bulk graphite, there is no physical justification for introducing the cut-off frequency for the long wavelength phonons in graphene. It leads to substantial underestimation of graphene's lattice thermal conductivity and a wrong conclusion about the dependence on the number of atomic layers. We outline the proper way for calculating the lattice thermal conductivity of graphene, which requires an introduction of other scattering mechanisms to avoid a logarithmic divergence of the thermal conductivity integral.
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Submitted 19 March, 2009;
originally announced March 2009.
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Phonon Thermal Conduction in Graphene
Authors:
D. L. Nika,
E. P. Pokatilov,
A. S. Askerov,
A. A. Balandin
Abstract:
We investigated theoretically the phonon thermal conductivity of single layer graphene. The phonon dispersion for all polarizations and crystallographic directions in graphene lattice was obtained using the valence-force field method. The three-phonon Umklapp processes were treated exactly using an accurate phonon dispersion and Brillouin zone, and accouting for all phonon relaxation channels al…
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We investigated theoretically the phonon thermal conductivity of single layer graphene. The phonon dispersion for all polarizations and crystallographic directions in graphene lattice was obtained using the valence-force field method. The three-phonon Umklapp processes were treated exactly using an accurate phonon dispersion and Brillouin zone, and accouting for all phonon relaxation channels allowed by the momentum and energy conservation laws. The uniqueness of graphene was reflected in the two-dimensional phonon density of states and restrictions on the phonon Umklapp scattering phase-space. The phonon scattering on defects and graphene edges has been also included in the model. The calculations were performed for the Gruneisen parameter, which was determined from the ab initio theory as a function of the phonon wave vector and polarization branch, and for a range of values from experiments. It was found that the near room-temperature thermal conductivity of single layer graphene, calculated with a realistic Gruneisen parameter, is in the range ~ 2000 - 5000 W/mK depending on the defect concentration and roughness of the edges. Owing to the long phonon mean free path the graphene edges produce strong effect on thermal conductivity even at room temperature. The obtained results are in good agreement with the recent measurements of the thermal conductivity of suspended graphene.
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Submitted 20 March, 2009; v1 submitted 2 December, 2008;
originally announced December 2008.
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Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures
Authors:
E. P. Pokatilov,
D. L. Nika,
V. M. Fomin,
J. T. Devreese
Abstract:
We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schrödinger equation, both for a single-band Hamiltonian and for a non-symmetrical 6-band Hamiltonian. The deformation potential and spin-orbit interaction are taken into account. For…
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We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schrödinger equation, both for a single-band Hamiltonian and for a non-symmetrical 6-band Hamiltonian. The deformation potential and spin-orbit interaction are taken into account. For increasing built-in field, generated by the piezoelectric polarization and by the spontaneous polarization, the energy of size quantization rises and the number of size quantized electron and hole levels in a quantum well decreases. The exciton energy spectrum is obtained using electron and hole wave functions and two-dimensional Coulomb wave functions as a basis. We have calculated the exciton oscillator strengths and identified the exciton states active in optical absorption. For different values of the Al content x, a quantitative interpretation, in a good agreement with experiment, is provided for (i) the red shift of the zero-phonon photoluminescence peaks for increasing the quantum-well width, (ii) the relative intensities of the zero-phonon and one-phonon photoluminescence peaks, found within the non-adiabatic approach, and (iii) the values of the photoluminescence decay time as a function of the quantum-well width.
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Submitted 29 May, 2008;
originally announced May 2008.
