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Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy
Authors:
Yusuke Sato,
Yuki Fukaya,
Akito Nakano,
Takeo Hoshi,
Chi-Cheng Lee,
Kazuyoshi Yoshimi,
Taisuke Ozaki,
Takeru Nakashima,
Yasunobu Ando,
Hiroaki Aoyama,
Tadashi Abukawa,
Yuki Tsujikawa,
Masafumi Horio,
Masahito Niibe,
Fumio Komori,
Iwao Matsuda
Abstract:
The structure of an Al(111)3x3-Si surface was examined by combining data from positron diffraction and core-level photoemission spectroscopy. Analysis of the diffraction rocking curves indicated that the overlayer had a flat honeycomb lattice structure. Simulations of Si core-level spectra calculated via the first-principles indicated that one of the Si atoms in the unit cell was replaced by an Al…
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The structure of an Al(111)3x3-Si surface was examined by combining data from positron diffraction and core-level photoemission spectroscopy. Analysis of the diffraction rocking curves indicated that the overlayer had a flat honeycomb lattice structure. Simulations of Si core-level spectra calculated via the first-principles indicated that one of the Si atoms in the unit cell was replaced by an Al atom. The surface superstructure was thus a two-dimensional layer of Al-embedded silicene on Al(111).
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Submitted 29 September, 2024;
originally announced September 2024.
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Electronic topological transition of 2D boron by the ion exchange reaction
Authors:
Xiaoni Zhang,
Yuki Tsujikawa,
Ikuma Tateishi,
Masahito Niibe,
Tetsuya Wada,
Masafumi Horio,
Miwa Hikichi,
Yasunobu Ando,
Kunio Yubuta,
Takahiro Kondo,
Iwao Matsuda
Abstract:
We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layer…
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We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layered crystal of YCrB$_4$ is an insulator ($Z_2=1$). The results demonstrate the electronic topological transition by replacement of the counter atoms on the non-symmorphic borophene layer.
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Submitted 11 May, 2022;
originally announced May 2022.
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A novel measurement approach for near-edge x-ray absorption fine structure: continuous 2$π$ angular rotation of linear polarization
Authors:
Yoshiki Kudo,
Yasuyuki Hirata,
Masafumi Horio,
Masahito Niibe,
Iwao Matsuda
Abstract:
A new technical method is developed for soft x-ray spectroscopy of near-edge x-ray absorption fine structure (NEXAFS). The measurement is performed with continuously rotating linearly polarized light over 2$π$, generated by a segmented undulator. A demonstration of the rotational NEXAFS experiment was successfully made with a 2D film, showing detailed polarization-dependence in intensity of the mo…
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A new technical method is developed for soft x-ray spectroscopy of near-edge x-ray absorption fine structure (NEXAFS). The measurement is performed with continuously rotating linearly polarized light over 2$π$, generated by a segmented undulator. A demonstration of the rotational NEXAFS experiment was successfully made with a 2D film, showing detailed polarization-dependence in intensity of the molecular orbitals. The present approach provides varieties of technical opportunities that are compatible with the state-of-the-art experiments in nano-space and under the $operando$ condition.
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Submitted 24 March, 2021;
originally announced March 2021.
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Electronic structure of a 3x3-ordered silicon layer on Al(111)
Authors:
Y. Sato,
Y. Fukaya,
M. Cameau,
A. K. Kundu,
D. Shiga,
R. Yukawa,
K. Horiba,
C. -H. Chen,
A. Huang,
H. -T. Jeng,
T. Ozaki,
H. Kumigashira,
M. Niibe,
I. Matsuda
Abstract:
Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) impl…
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Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.
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Submitted 11 May, 2020;
originally announced May 2020.
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Quasi-free-standing monolayer hexagonal boron nitride on Ni
Authors:
Satoru Suzuki,
Yuichi Haruyama,
Masahito Niibe,
Takashi Tokushima,
Akinobu Yamaguchi,
Yuichi Utsumi,
Atsushi Ito,
Ryo Kadowaki,
Akane Maruta,
Tadashi Abukawa
Abstract:
The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN pi and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the q…
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The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN pi and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.
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Submitted 18 October, 2018;
originally announced October 2018.
