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Point-contact study of the LuNi2B2C borocarbide superconducting film
Authors:
O. E. Kvitnitskaya,
Yu. G. Naidyuk,
I. K. Yanson,
T. Niemeier,
G. Fuchs,
B. Holzapfel,
L. Schultz
Abstract:
We present point-contact (PC) Andreev-reflection measurements of a superconducting epitaxial c-axis oriented nickel borocarbide film LuNi2B2C (Tc=15.9 K). The averaged value of the superconducting gap is found to be 2.6 +/-0.2 meV in the one-gap approach, whereas the two-gap approach results in 2.14+/-0.36 meV and 3.0+/-0.27 meV. The better fit of the Andreev-reflection spectra for the LuNi2B2C -…
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We present point-contact (PC) Andreev-reflection measurements of a superconducting epitaxial c-axis oriented nickel borocarbide film LuNi2B2C (Tc=15.9 K). The averaged value of the superconducting gap is found to be 2.6 +/-0.2 meV in the one-gap approach, whereas the two-gap approach results in 2.14+/-0.36 meV and 3.0+/-0.27 meV. The better fit of the Andreev-reflection spectra for the LuNi2B2C - Cu PC obtained by the two-gap approach provides evidence for multiband superconductivity in LuNi2B2C. For the first time, PC electron-phonon interaction (EPI) spectra have been measured for this compound. They demonstrate pronounced phonon maximum at 8.5+/-0.4meV and a second shallow one at 15.8+/-0.6 meV. The electron-phonon coupling constant estimated from the PC EPI spectra turned out to be small (~ 0.1), like in other superconducting rare-earth nickel borocarbides. Possible reasons for this are discussed.
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Submitted 30 September, 2010; v1 submitted 8 July, 2010;
originally announced July 2010.
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Texture and morphology of epitaxially grown LuNi2B2C thin films on single crystalline MgO substrates of different orientation
Authors:
T. Niemeier,
R. Huhne,
L. Schultz,
B. Holzapfel
Abstract:
This paper has been withdrawn and will be replaced as soon as possible.
This paper has been withdrawn and will be replaced as soon as possible.
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Submitted 19 February, 2010; v1 submitted 18 February, 2010;
originally announced February 2010.
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Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals
Authors:
T. Niemeier,
R. Hühne,
A. Köhler,
G. Behr,
L. Schultz,
B. Holzapfel
Abstract:
Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between…
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Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between the borocarbide film, the \luo interface layer and the substrate is (110)[001]MgO II (110)[001]Lu2O3 II (001)[100]LuNi2B2C. A very sharp in--plane alignment of about 1\textdegree and an out--of--plane order of about 2.5\textdegree was achieved in the \luni layer. However, a systematic study using different deposition temperatures shows that the temperature is crucial for phase formation and appealing superconducting properties. Applying optimized deposition conditions, critical temperatures of up to 15.8 K and steep superconducting transitions of about 0.3 K are reproducibly obtained. We further analyzed the upper critical field Hc2 of one film deposited under optimized conditions. It was resistively measured along the [001] direction and fitted with a power law. The value of Hc2(0) = 9.82 T obtained from that fit is in very good agreement with single crystal data and the power exponent describing the positive curvature for small external magnetic fields of about 0.19 indicates a relatively low intraband scattering in the films.
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Submitted 19 February, 2010; v1 submitted 18 February, 2010;
originally announced February 2010.
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Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition
Authors:
E. Backen,
S. Haindl,
T. Niemeier,
T. Freudenberg,
J. Werner,
G. Behr,
L. Schultz,
B. Holzapfel
Abstract:
LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show…
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LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.
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Submitted 14 August, 2008; v1 submitted 13 August, 2008;
originally announced August 2008.
