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Microscopic processes during ultra-fast laser generation of Frenkel defects in diamond
Authors:
Benjamin Griffiths,
Andrew Kirkpatrick,
Shannon S. Nicley,
Rajesh L. Patel,
Joanna M. Zajac,
Gavin W. Morley,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mecha…
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Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mechanisms and precision engineering of vacancies is desirable. We present a theoretical and experimental study into the ultra-fast laser generation of vacancy-interstitial pairs (Frenkel defects) in diamond. The process is described by a set of coupled rate equations of the pulsed laser interaction with the material and of the non-equilibrium dynamics of charge carriers during and in the wake of the pulse. We find that a model for Frenkel defect generation via the recombination of a bound biexciton as the electron plasma cools provides good agreement with experimental data, reproducing an effective non-linearity of $\sim$ 40 for Frenkel defect generation with respect to laser pulse energy.
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Submitted 25 May, 2021;
originally announced May 2021.
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Silicon-vacancy color centers in phosphorus-doped diamond
Authors:
Assegid Mengistu Flatae,
Stefano Lagomarsino,
Florian Sledz,
Navid Soltani,
Shannon S. Nicley,
Ken Haenen,
Robert Rechenberg,
Michael F. Becker,
Silvio Sciortino,
Nicla Gelli,
Lorenzo Giuntini,
Francesco Taccetti,
Mario Agio
Abstract:
The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this stu…
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The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at the low Si-ion implantation fluences.
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Submitted 19 December, 2019;
originally announced December 2019.
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Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study
Authors:
Danny E. P. Vanpoucke,
Shannon S. Nicley,
Jorne Raymakers,
Wouter Maes,
Ken Haenen
Abstract:
The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 ele…
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The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background luminescence.
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Submitted 23 April, 2019;
originally announced April 2019.
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Laser writing of individual atomic defects in a crystal with near-unity yield
Authors:
Yu-Chen Chen,
Benjamin Griffiths,
Laiyi Weng,
Shannon Nicley,
Shazeaa N. Ishmael,
Yashna Lekhai,
Sam Johnson,
Colin J. Stephen,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin de…
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Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin degrees of freedom with potential for applications in advanced sensing and computing. Here we demonstrate a method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy using laser processing with online fluorescence feedback. This method provides a new tool for the fabrication of engineered materials and devices for quantum technologies and offers insight into the diffusion dynamics of point defects in solids.
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Submitted 11 July, 2018;
originally announced July 2018.
