A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Authors:
Paul Steinacker,
Nard Dumoulin Stuyck,
Wee Han Lim,
Tuomo Tanttu,
MengKe Feng,
Andreas Nickl,
Santiago Serrano,
Marco Candido,
Jesus D. Cifuentes,
Fay E. Hudson,
Kok Wai Chan,
Stefan Kubicek,
Julien Jussot,
Yann Canvel,
Sofie Beyne,
Yosuke Shimura,
Roger Loo,
Clement Godfrin,
Bart Raes,
Sylvain Baudot,
Danny Wan,
Arne Laucht,
Chih Hwan Yang,
Andre Saraiva,
Christopher C. Escott
, et al. (2 additional authors not shown)
Abstract:
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including si…
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Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to $T_\mathrm{2}^{\mathrm{*}} = 30.4$ $μ$s, $T_\mathrm{2}^{\mathrm{Hahn}} = 803$ $μ$s, and $T_1 = 6.3$ s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.
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Submitted 25 October, 2024; v1 submitted 20 October, 2024;
originally announced October 2024.
Entangling gates on degenerate spin qubits dressed by a global field
Authors:
Ingvild Hansen,
Amanda E. Seedhouse,
Santiago Serrano,
Andreas Nickl,
MengKe Feng,
Jonathan Y. Huang,
Tuomo Tanttu,
Nard Dumoulin Stuyck,
Wee Han Lim,
Fay E. Hudson,
Kohei M. Itoh,
Andre Saraiva,
Arne Laucht,
Andrew S. Dzurak,
Chih Hwan Yang
Abstract:
Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubi…
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Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubit gates, are yet to be demonstrated to establish global control in combination with dressed qubits as a viable path to universal quantum computing. Here we demonstrate simultaneous on-resonance driving of degenerate qubits using a global field while retaining addressability for qubits with equal Larmor frequencies. Furthermore, we implement SWAP oscillations during on-resonance driving, constituting the demonstration of driven two-qubit gates. Significantly, our findings highlight the fragility of entangling gates between superposition states and how dressing can increase the noise robustness. These results represent a crucial milestone towards global control operation with dressed qubits. It also opens a door to interesting spin physics on degenerate spins.
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Submitted 30 November, 2023; v1 submitted 16 November, 2023;
originally announced November 2023.
