-
Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions
Authors:
T. Huong Dang,
D. Quang To,
E. Erina,
T. L. Hoai Nguyen,
V. Safarov,
H. Jaffres,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in…
▽ More
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.
△ Less
Submitted 25 July, 2017;
originally announced July 2017.
-
Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces
Authors:
T. Huong Dang,
H. Jaffrès,
T. L. Hoai Nguyen,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of…
▽ More
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of transmission depending on the sign of their incident in-plane wavevector. In particular, the transmission is fully quenched at some points of the Brillouin zone for specific in-plane wavevectors and not for the opposite. Moreover, it is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k ? p model showing, in addition, corresponding effects in the valence band and highlighting the robustness of the effect, which even persists for a single magnetic electrode. Upon tunneling, electrons undergo an asymmetrical deflection which results in the occurrence of a transverse current, giving rise to a so-called Tunnel Hall Effect.
△ Less
Submitted 2 September, 2015;
originally announced September 2015.
-
Electric potential profile of a spherical soft particle with a charged core
Authors:
Anh D. Phan,
Dustin A. Tracy,
T. L. Hoai Nguyen,
N. A. Viet,
The-Long Phan,
Thanh H. Nguyen
Abstract:
The electrostatic potential profile of a spherical soft particle is derived by solving the Poisson-Boltzmann equations on a spherical system both numerically and analytically. The soft particle is assumed to consist of an ion-permeable charged outer layer and a non-permeable charged core with constant charged density. The contribution of the core to the potential profile is calculated for differen…
▽ More
The electrostatic potential profile of a spherical soft particle is derived by solving the Poisson-Boltzmann equations on a spherical system both numerically and analytically. The soft particle is assumed to consist of an ion-permeable charged outer layer and a non-permeable charged core with constant charged density. The contribution of the core to the potential profile is calculated for different charges and dielectric constants. Our results show that the charged core heavily influences the local potential within the soft particle. In contrast, the potential distribution outside the particle in the salt solution is found to be weakly dependent on the core features. These findings are consistent with previous experiments showing the minor impact of the core of the MS2 virus on its overall electrical properties. Our studies also indicate that while a change in temperature from 290 K to 310 K only slightly varies the potential, the ionic strength in the range of 1-600 mM has a significant effect on the potential profile. Our studies would provide good understanding for experimental research in the field of biophysics and nanomedicine.
△ Less
Submitted 4 December, 2013;
originally announced December 2013.
-
Spin rotation, spin filtering, and spin transfer in directional tunneling through non-centrosymmetric semiconductor barriers
Authors:
T. L. Hoai Nguyen,
Henri-Jean Drouhin,
Jean-Eric Wegrowe,
Guy Fishman
Abstract:
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling proc…
▽ More
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved. Along some crystallographic directions, the incident wave experiences spin filtering during the tunneling. These results open stimulating perspectives for spin manipulation in tunnel devices.
△ Less
Submitted 13 January, 2009; v1 submitted 8 July, 2008;
originally announced July 2008.
