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Scalable Transfer-Free Fabrication of MoS$_2$/SiO$_2$ Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
Authors:
Sebastian Hammer,
Hans-Moritz Mangold,
Ariana E. Nguyen,
Dominic Martinez-Ta,
Sahar Naghibi Alvillar,
Ludwig Bartels,
Hubert J. Krenner
Abstract:
We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS$_2$) - silicon dioxide (SiO$_2$) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS$_2$ photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS$_2$ simply by var…
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We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS$_2$) - silicon dioxide (SiO$_2$) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS$_2$ photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS$_2$ simply by variation of the photonic crystal periodicity. Device fabrication started by substrate-scale growth of MoS$_2$ using chemical vapor deposition (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a photon crystal nanocavity array on the same substrate at more than 50% yield of functional devices. Our cavities exhibit three dominant modes with measured linewidths less than 0.2 nm, corresponding to quality factors exceeding 4000. All experimental findings are found to be in excellent agreement with finite difference time domain simulations.
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Submitted 28 June, 2017;
originally announced June 2017.
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Testbeds for Transition Metal Dichalcogenide Photonics: Efficacy of Light Emission Enhancement in Monomer vs. Dimer Nanoscale Antennae
Authors:
Mohammad H. Tahersima,
M. Danang Birowosuto,
Zhizhen Ma,
Ibrahim Sarpkaya,
William C. Coley,
Michael D. Valentin,
I-Hsi Lu,
Ke Liu,
Yao Zhou,
Aimee Martinez,
Ingrid Liao,
Brandon N. Davis,
Joseph Martinez,
Sahar Naghibi Alvillar,
Dominic Martinez-Ta,
Alison Guan,
Ariana E. Nguyen,
Cesare Soci,
Evan Reed,
Ludwig Bartels,
Volker J. Sorger
Abstract:
Monolayer transition metal dichalcogenides are uniquely-qualified materials for photonics because they combine well defined tunable direct band gaps and selfpassivated surfaces without dangling bonds. However, the atomic thickness of these 2D materials results in low photo absorption limiting the achievable photo luminescence intensity. Such emission can, in principle, be enhanced via nanoscale an…
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Monolayer transition metal dichalcogenides are uniquely-qualified materials for photonics because they combine well defined tunable direct band gaps and selfpassivated surfaces without dangling bonds. However, the atomic thickness of these 2D materials results in low photo absorption limiting the achievable photo luminescence intensity. Such emission can, in principle, be enhanced via nanoscale antennae resulting in; a. an increased absorption cross-section enhancing pump efficiency, b. an acceleration of the internal emission rate via the Purcell factor mainly by reducing the antennas optical mode volume beyond the diffraction limit, and c. improved impedance matching of the emitter dipole to the freespace wavelength. Plasmonic dimer antennae show orders of magnitude hot-spot field enhancements when an emitter is positioned exactly at the midgap. However, a 2D material cannot be grown, or easily transferred, to reside in mid-gap of the metallic dimer cavity. In addition, a spacer layer between the cavity and the emissive material is required to avoid non-radiative recombination channels. Using both computational and experimental methods, in this work we show that the emission enhancement from a 2D emitter- monomer antenna cavity system rivals that of dimers at much reduced lithographic effort. We rationalize this finding by showing that the emission enhancement in dimer antennae does not specifically originate from the gap of the dimer cavity, but is an average effect originating from the effective cavity crosssection taken below each optical cavity where the emitting 2D film is located. In particular, we test an array of different dimer and monomer antenna geometries and observe a representative 3x higher emission for both monomer and dimer cavities as compared to intrinsic emission of Chemical Vapor Deposition synthesized WS2 flakes.
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Submitted 26 February, 2017;
originally announced February 2017.
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Combined electrical transport and capacitance spectroscopy of a ${\mathrm{MoS_2-LiNbO_3}}$ field effect transistor
Authors:
W. Michailow,
F. J. R. Schülein,
B. Möller,
E. Preciado,
A. E. Nguyen,
G. v. Son,
J. Mann,
A. L. Hörner,
A. Wixforth,
L. Bartels,
H. J. Krenner
Abstract:
We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. Th…
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We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_\mathrm{SD}$-$V_\mathrm{GS}$ characteristics over the \emph{entire range} of $V_\mathrm{GS}$. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.
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Submitted 2 January, 2017;
originally announced January 2017.
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Large-Scale Arrays of Single- and Few-Layer MoS2 Nanomechanical Resonators
Authors:
Hao Jia,
Rui Yang,
Ariana E. Nguyen,
Sahar N. Alvillar,
Thomas Empante,
Ludwig Bartels,
Philip X. -L. Feng
Abstract:
We report on fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few…
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We report on fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few-layer MoS2 drumhead resonators (0.5 to 2um in diameter) offer fundamental resonances (f_0) in the very high frequency (VHF) band (up to ~120MHz) and excellent figures-of-merit up to f_0*Q ~ 3*10^10Hz. A stretched circular diaphragm model allows us to estimate low pre-tension levels of typically ~15mN/m in these devices. Compared to previous approaches, our transfer process features high yield and uniformity with minimal liquid and chemical exposure (only involving DI water), resulting in high-quality MoS2 crystals and exceptional device performance and homogeneity; and our process is readily applicable to other 2D materials.
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Submitted 13 July, 2016;
originally announced July 2016.
