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A Replica Stoner Theory for Dirty Ferromagnets
Authors:
Wenzhe Deng,
Tai Kai Ng
Abstract:
This paper investigates the effect of disorder on a ferromagnetic metal with repulsive interactions. We assume that, in the clean limit, the ferromagnetic state can be described by Stoner mean-field theory and study how disorder affects the the system by using a combined replica + Stoner mean-field approach. At zero temperature, we find that a replica-symmetric ferromagnetic mean-field solution ex…
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This paper investigates the effect of disorder on a ferromagnetic metal with repulsive interactions. We assume that, in the clean limit, the ferromagnetic state can be described by Stoner mean-field theory and study how disorder affects the the system by using a combined replica + Stoner mean-field approach. At zero temperature, we find that a replica-symmetric ferromagnetic mean-field solution exists in the presence of disorder with a modified Stoner criteria where the ferromagnetism is enhanced by disorder. At finite temperature, a Landau theory is employed to construct the phase diagram, revealing that beyond a critical disorder strength, a spin-glass phase may exist between the high-temperature paramagnetic phase and the low-temperature ferromagnetic phase. For weak (repulsive) interaction where the system is non-ferromagnetic in the clean limit, the possibility of a disordered-induced ferromagnetic ground state is observed both at zero temperature and finite temperature. The potential applicability of this framework to realistic materials is briefly discussed.
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Submitted 21 September, 2025; v1 submitted 28 August, 2025;
originally announced August 2025.
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Generalized Peierls substitution for Wannier obstructions: response to disorder and interactions
Authors:
Shuai A. Chen,
Roderich Moessner,
Tai Kai Ng
Abstract:
We study the interplay between quantum geometry, interactions, and external fields in complex band systems. When Wannier obstructions preclude a description based solely on atomic-like orbitals, this complicates the prediction of electromagnetic responses particularly in the presence of disorder and interactions. In this work, we introduce a generalized Peierls substitution framework based on Lagr…
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We study the interplay between quantum geometry, interactions, and external fields in complex band systems. When Wannier obstructions preclude a description based solely on atomic-like orbitals, this complicates the prediction of electromagnetic responses particularly in the presence of disorder and interactions. In this work, we introduce a generalized Peierls substitution framework based on Lagrange multipliers to enforce the constraints of the Wannier obstruction in the band of interest. Thus we obtain effective descriptions of interactions and disorder in the presence of non-trivial quantum geometry of that band. We apply our approach to examples including the diamagnetic response in flat-band superconductors and delocalization effects in flat-band metals caused by interactions and disorder.
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Submitted 25 September, 2025; v1 submitted 12 March, 2025;
originally announced March 2025.
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Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Authors:
Jie Zhou,
Qiming Zhang,
Jiarui Gong,
Yi Lu,
Yang Liu,
Haris Abbasi,
Haining Qiu,
Jisoo Kim,
Wei Lin,
Donghyeok Kim,
Yiran Li,
Tien Khee Ng,
Hokyung Jang,
Dong Liu,
Haiyan Wang,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor grafting offers a promising solution by directly forming electrically active, lattice-mismatched heterojunctions between dissimilar materials. Howeve…
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Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor grafting offers a promising solution by directly forming electrically active, lattice-mismatched heterojunctions between dissimilar materials. However, its scalability and uniformity at the wafer level have yet to be demonstrated. This work demonstrates the achievement of highly uniform, reproducible results across silicon, sapphire, and gallium nitride (GaN) substrates using wafer-scale semiconductor grafting. To illustrate this scalability, we conducted an in-depth study of a grafted Si/GaN heterojunction, examining band alignment through X-ray photoelectron spectroscopy and confirming crystallinity and interfacial integrity with scanning transmission electron microscopy. The resulting p-n diodes exhibit significantly enhanced electrical performance and wafer-scale uniformity compared to conventional approaches. This work establishes wafer-scale semiconductor grafting as a versatile and scalable technology, bridging the gap between laboratory-scale research and industrial manufacturing for heterogeneous semiconductor integration, and paving the way for novel, high-performance electronic and optoelectronic devices.
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Submitted 12 November, 2024;
originally announced November 2024.
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In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy
Authors:
Chao Shen,
Wenkang Zhan,
Shujie Pan,
Hongyue Hao,
Ning Zhuo,
Kaiyao Xin,
Hui Cong,
Chi Xu,
Bo Xu,
Tien Khee Ng,
Siming Chen,
Chunlai Xue,
Fengqi Liu,
Zhanguo Wang,
Chao Zhao
Abstract:
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminesce…
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Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in full width at half maximum (FWHM) from 36.69 meV to 28.17 meV under initially suboptimal growth conditions. Our automated, in-situ self-optimized lasers with 5-layer InAs QDs achieved electrically pumped continuous-wave operation at 1240 nm with a low threshold current of 150 A/cm2 at room temperature, an excellent performance comparable to samples grown through traditional manual multi-parameter optimization methods. These results mark a significant step toward intelligent, low-cost, and reproductive light emitters production.
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Submitted 31 October, 2024;
originally announced November 2024.
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Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Authors:
Jie Zhou,
Yifan Wang,
Ziqian Yao,
Qingxiao Wang,
Yara S. Banda,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Yi Lu,
Tsung-Han Tsai,
Yiran Li,
Vincent Gambin,
Tien Khee Ng,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through…
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We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through chemical oxidation and atomic layer deposition (ALD). Scanning transmission electron microscopy (STEM) confirmed the formation of the UOL and the single crystallinity of the grafted junction. The resulting tunnel diodes consistently exhibited negative differential resistance (NDR) behavior at room temperature, with a high maximum peak-to-valley current ratio (PVCR) of 36.38, valley voltages ranging from 1.3 to 1.8 V, and a peak tunneling current density of 0.95 kA/cm2. This study not only highlights the critical roles of the UOL as both an interface improvement layer and a quantum tunneling medium, but also establishes "semiconductor grafting" as an effective and versatile method for high-performance, lattice-mismatched heterojunction devices.
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Submitted 24 September, 2024;
originally announced September 2024.
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SemiEpi: Self-driving, Closed-loop Multi-Step Growth of Semiconductor Heterostructures Guided by Machine Learning
Authors:
Chao Shen,
Wenkang Zhan,
Kaiyao Xin,
Shujie Pan,
Xiaotian Cheng,
Ruixiang Liu,
Zhe Feng,
Chaoyuan Jin,
Hui Cong,
Chi Xu,
Bo Xu,
Tien Khee Ng,
Siming Chen,
Chunlai Xue,
Zhanguo Wang,
Chao Zhao
Abstract:
The semiconductor industry has prioritized automating repetitive tasks through closed-loop, self-driving experimentation, accelerating the optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in self-driving processes with minimal human intervention. This work introduces SemiEpi, a self-driving platform designed to execute molecular beam epitaxy (MBE) gr…
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The semiconductor industry has prioritized automating repetitive tasks through closed-loop, self-driving experimentation, accelerating the optimization of complex multi-step processes. The emergence of machine learning (ML) has ushered in self-driving processes with minimal human intervention. This work introduces SemiEpi, a self-driving platform designed to execute molecular beam epitaxy (MBE) growth of semiconductor heterostructures through multi-step processes, in-situ monitoring, and on-the-fly feedback control. By integrating standard reactor, parameter initialization, and multiple ML models, SemiEpi identifies optimal initial conditions and proposes experiments for multi-step heterostructure growth, eliminating the need for extensive expertise in MBE processes. SemiEpi initializes material growth parameters tailored to specific material characteristics, and fine-tuned control over the growth process is then achieved through ML optimization. We optimize the growth for InAs quantum dots (QDs) heterostructures to showcase the power of SemiEpi, achieving a QD density of 5E10/cm2, 1.6-fold increased photoluminescence (PL) intensity and reduced full width at half maximum (FWHM) of 29.13 meV. This work highlights the potential of closed-loop, ML-guided systems to address challenges in multi-step growth. Our method is critical to achieve repeatable materials growth using commercially scalable tools. Furthermore, our strategy facilitates developing a hardware-independent process and enhancing process repeatability and stability, even without exhaustive knowledge of growth parameters.
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Submitted 5 January, 2025; v1 submitted 6 August, 2024;
originally announced August 2024.
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Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication
Authors:
Manyang Li,
Jianan Duan,
Zhiyong Jin,
Shujie Pan,
Wenkang Zhan,
Jinpeng Chen,
Jinling Yu,
Xiaotian Cheng,
Zhibo Ni,
Chaoyuan Jin,
Tien Khee Ng,
Jinxia Kong,
Xiaochuan Xu,
Yong Yao,
Bo Xu,
Siming Chen,
Zhanguo Wang,
Chao Zhao
Abstract:
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing cont…
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Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1E11 and 1E12 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7E13 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical.
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Submitted 26 December, 2024; v1 submitted 30 July, 2024;
originally announced July 2024.
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Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Authors:
Jiarui Gong,
Jie Zhou,
Ashok Dheenan,
Moheb Sheikhi,
Fikadu Alema,
Tien Khee Ng,
Shubhra S. Pasayat,
Qiaoqiang Gan,
Andrei Osinsky,
Vincent Gambin,
Chirag Gupta,
Siddharth Rajan,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi…
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Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures.
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Submitted 1 December, 2023;
originally announced December 2023.
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A Replica-BCS theory for dirty superconductors
Authors:
Yat Fan Lau,
Tai Kai Ng
Abstract:
In this paper, we revisit the problem of dirty superconductors using a replica-symmetric BCS (RS-BCS) theory. We apply the RS-BCS theory to dirty superconductor grains of size $L^d$, where $L$ is the localization length and $d$ is the dimension of the system, assuming that the macroscopic system is composed of weakly coupled grains. Besides disordered potential, We also consider the case where reg…
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In this paper, we revisit the problem of dirty superconductors using a replica-symmetric BCS (RS-BCS) theory. We apply the RS-BCS theory to dirty superconductor grains of size $L^d$, where $L$ is the localization length and $d$ is the dimension of the system, assuming that the macroscopic system is composed of weakly coupled grains. Besides disordered potential, We also consider the case where regions with opposite signs of interaction exist in the grains, with net attractive interaction between electrons. Within the RS-BCS mean field theory, the system phase diagram, single-particle tunneling density of states and the superfluid density are computed within the RS-BCS theory for different strengths of disorder, We show that our result agrees qualitatively with previous numerical studies in the case with pure attractive interaction, and that a Cooper-pair-glass state may exist when regions with opposite sign of interaction exists and the net interaction between electrons is close to zero. The plausible relevance of our result to the anomalous metal state is discussed.
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Submitted 2 July, 2025; v1 submitted 24 November, 2023;
originally announced November 2023.
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Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
Authors:
Jie Zhou,
Moheb Sheikhi,
Ashok Dheenan,
Haris Abbasi,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Vincent Gambin,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka…
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In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$.
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Submitted 5 October, 2023;
originally announced October 2023.
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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Authors:
Jie Zhou,
Ashok Dheenan,
Jiarui Gong,
Carolina Adamo,
Patrick Marshall,
Moheb Sheikhi,
Tsung-Han Tsai,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Gambin Vincent,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr…
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Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.
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Submitted 14 August, 2023; v1 submitted 12 August, 2023;
originally announced August 2023.
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Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Authors:
Jiarui Gong,
Donghyeok Kim,
Hokyung Jang,
Fikadu Alema,
Qingxiao Wang,
Tien Khee Ng,
Shuoyang Qiu,
Jie Zhou,
Xin Su,
Qinchen Lin,
Ranveer Singh,
Haris Abbasi,
Kelson Chabak,
Gregg Jessen,
Clincy Cheung,
Vincent Gambin,
Shubhra S. Pasayat,
Andrei Osinsky,
Boon,
S. Ooi,
Chirag Gupta,
Zhenqiang Ma
Abstract:
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se…
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The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors.
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Submitted 30 May, 2023;
originally announced May 2023.
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Proximity effect and Anomalous metal state in a model of mixed metal-superconductor grains
Authors:
Tai Kai Ng
Abstract:
Motivated by the discovery of the anomalous metal state in thin film systems and suggestions that coexistence of superconducting and metallic components is crucial to the formation of the state, we study in this paper a model of mixed metallic and superconducting grains coupled by electron tunneling - the metallic grains are expected to become superconducting because of proximity effect in a mean-…
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Motivated by the discovery of the anomalous metal state in thin film systems and suggestions that coexistence of superconducting and metallic components is crucial to the formation of the state, we study in this paper a model of mixed metallic and superconducting grains coupled by electron tunneling - the metallic grains are expected to become superconducting because of proximity effect in a mean-field treatment of the model. When quantum fluctuations in relative phases between different grains are taken into account, we show that the proximity effect can be destroyed and the metallic and superconducting grains become "insulating" with respect to each other when the charging energy between grains are strong enough and tunneling between grains are weak enough, in analogy to superconductor-insulator transition in pure superconducting grains or metal-insulator transition in pure metallic grains. Based on this observation, a physical picture of how the anomalous metal state may form is proposed. An experimental setup to test our proposed physical picture is suggested.
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Submitted 6 June, 2023; v1 submitted 25 May, 2023;
originally announced May 2023.
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Intrinsic Instabilities in Fermi Glasses
Authors:
Yat Fan Lau,
Tai Kai Ng
Abstract:
We study in this paper the effect of weak, short-ranged interaction on disordered metals. Through analysing the interaction matrix elements between different eigenstates of the non-interacting and corresponding Hartree-Fock single-particle Hamiltonian, we argue that as a result of localized single-particle eigenstates around the Fermi surface, the quasi-particle states on the Fermi surface are uns…
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We study in this paper the effect of weak, short-ranged interaction on disordered metals. Through analysing the interaction matrix elements between different eigenstates of the non-interacting and corresponding Hartree-Fock single-particle Hamiltonian, we argue that as a result of localized single-particle eigenstates around the Fermi surface, the quasi-particle states on the Fermi surface are unstable towards formation of magnetic moments for arbitrary weak (but finite) repulsive interaction in the thermodynamic limit. This is a mechanism very different from the case of strong interaction $U\sim W_B$ ($W_B=$ bandwidth) or the quantum Griffiths effect where local moments are formed at small localized regions where coupling to the surrounding is weak. Numerical simulations are performed to verify our analysis. We further propose within a Landau Fermi-liquid-type framework that our result is applicable for general electronic systems with weak, short-ranged interaction as long as the quasi-particle states exist and are localized. An analogous result is obtained for attractive interaction, suggesting that Fermi glass state is intrinsically unstable in arbitrary dimension.
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Submitted 29 July, 2024; v1 submitted 17 August, 2022;
originally announced August 2022.
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Protecting and Enhancing the Photoelectrocatalytic Nitrogen Reduction to Ammonia Performance of InGaN Nanowires using Mo2C Nanosheets and GaN Buffer Layer
Authors:
Paulraj Gnanasekar,
Karthik Peramaiy,
Huafan Zhang,
Tien Khee Ng,
Kuo-Wei Huang,
Jeganathan Kulandaivel,
Boon S. Ooi
Abstract:
Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation cu…
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Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation current under illumination was briefly elucidated. Large NH3 production of 7.2 gh-1cm-2 with high Faradaic efficiency of 12.6 % was realized at -0.2 V vs. reversible hydrogen electrode for the Mo2C/GaN/InGaN heterostructure. Notably, the proposed heterostructure also exemplifies excellent stability and reproducibility with excellent selectivity in the long-term chronoamperometry analysis. Further, the incorporation of GaN buffer layer in between Mo2C and InGaN NWs was deeply investigated. From Density Functional Theory (DFT) analysis, the incorporation of GaN buffer layer aids the suitable band edge position for the transfer of photogenerated charge carrier from InGaN to Mo2C co-catalyst, and unique 3d orbital of Mo2C is highly suitable to hold N2 for effective reduction to NH3.
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Submitted 26 May, 2022;
originally announced May 2022.
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Topological Superconductivity in Multifold Fermion Metals
Authors:
Jason Z. S. Gao,
Xue-Jian Gao,
Wen-Yu He,
Xiao Yan Xu,
T. K. Ng,
K. T. Law
Abstract:
Recently, multifold fermions characterized by band crossings with multifold degeneracy and Fermi surfaces with nontrivial Chern numbers have been discovered experimentally in AlPt[arXiv:1812.03310] and XSi(X=Rh,Co)[arXiv:1812.04466][arXiv:1901.03358][arXiv:1809.01312]. In this work, we largely expand the family of multifold fermion materials by pointing out that several well-studied noncentrosymme…
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Recently, multifold fermions characterized by band crossings with multifold degeneracy and Fermi surfaces with nontrivial Chern numbers have been discovered experimentally in AlPt[arXiv:1812.03310] and XSi(X=Rh,Co)[arXiv:1812.04466][arXiv:1901.03358][arXiv:1809.01312]. In this work, we largely expand the family of multifold fermion materials by pointing out that several well-studied noncentrosymmetric superconductors are indeed multifold fermion metals. Importantly, their normal state topological properties, which have been ignored in previous studies, play an important role in the superconducting properties. Taking Li$_2$Pd$_3$B and Li$_2$Pt$_3$B as examples, we found a large number of unconventional degenerate points, such as double spin-1, spin-3/2, Weyl and double Weyl topological band crossing points near the Fermi energy, which result in finite Chern numbers on Fermi surfaces. Long Fermi arc states in Li$_2$Pd$_3$B, originating from the nontrivial band topology were found. Importantly, it has been shown experimentally that Li$_2$Pd$_3$B and Li$_2$Pt$_3$B are fully gapped and gapless superconductors, respectively. By analyzing the possible pairing symmetries, we suggest that Li$_2$Pd$_3$B can be a DIII class topological superconductor with Majorana surface states, even though the spin-orbit coupling in Li$_2$Pd$_3$B is negligible. Interestingly, Li$_2$Pt$_3$B, being gapless, is likely to be a nodal topological superconductor with dispersionless surface Majorana modes. We further identified that several noncentrosymmetric superconductors, such as Mo$_3$Al$_2$C, PdBiSe, Y$_2$C$_3$ and La$_2$C$_3$, are multifold fermion superconductors whose normal state topological properties have been ignored in previous experimental and theoretical studies.
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Submitted 17 June, 2021; v1 submitted 21 December, 2020;
originally announced December 2020.
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Emerging ergodic behavior within many-body localized states
Authors:
Wai Pang Sze,
Tai Kai Ng,
Kam Tuen Law
Abstract:
We report in this paper our numerical analysis of energy level spacing statistics for the one-dimensional spin-$1/2$ XXZ model in random on-site longitudinal magnetic fields $B_i$ ($-h\leq B_i\leq h$)). We concentrate on the strong disorder limit $J_{\perp}<<J_z,h)$ where $J_z$ and $J_{\perp}$ are the (nearest neighbor) spin interaction strength in $z$- and planar ($xy$)- directions, respectively.…
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We report in this paper our numerical analysis of energy level spacing statistics for the one-dimensional spin-$1/2$ XXZ model in random on-site longitudinal magnetic fields $B_i$ ($-h\leq B_i\leq h$)). We concentrate on the strong disorder limit $J_{\perp}<<J_z,h)$ where $J_z$ and $J_{\perp}$ are the (nearest neighbor) spin interaction strength in $z$- and planar ($xy$)- directions, respectively. The system is expected to be in a many-body localized (MBL) state in this parameter regime. By analyzing the energy-level spacing statistics as a function of strength of random magnetic field $h$, energy of the many-body state $E$, the number of spin-$\uparrow$ particles in the system $M=\sum_i(s_i^z+{1\over2})$ and the spin interaction strengths $J_z$ and $J_{\perp}$, we show that there exists a small parameter region $J_z\sim h$ where ergodic behaviour emerges at the middle of the many-body energy spectrum when $M\sim{N\over2}$ ($N=$ length of spin chain). The emerging ergodic phase shows qualitatively different behaviour compared with the usual ergodic phase that exists in the weak-disorder limit.
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Submitted 19 June, 2021; v1 submitted 24 May, 2020;
originally announced May 2020.
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Strongly enlarged topological regime and enhanced superconducting gap in nanowires coupled to Ising superconductors
Authors:
Ying-Ming Xie,
Benjamin T. Zhou,
T. K. Ng,
K. T. Law
Abstract:
An external magnetic field is needed to drive a nanowire in proximity to an s-wave superconductor into a topological regime which supports Majorana end states. However, a magnetic field generally suppresses the proximity superconducting gap induced on the nanowire. In recent experiments using InSb nanowires coupled to Al, the induced proximity gap vanishes at magnetic fields B~1T. This results in…
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An external magnetic field is needed to drive a nanowire in proximity to an s-wave superconductor into a topological regime which supports Majorana end states. However, a magnetic field generally suppresses the proximity superconducting gap induced on the nanowire. In recent experiments using InSb nanowires coupled to Al, the induced proximity gap vanishes at magnetic fields B~1T. This results in a small superconducting gap on the wire and a narrow topological regime which is proportional to the strength of the magnetic field. In this work, we show that by placing nanowires in proximity to recently discovered Ising superconductors such as the atomically thin transition-metal dichalcogenide(TMD) NbSe2, the topological superconducting gap on the wire can maintain at a large magnetic field as strong as B~10T. This robust topological superconducting gap is induced by the unique equal-spin triplet Cooper pairs of the parent Ising superconductor. The strong magnetic field allows a topological regime ten times larger than those in InSb wires coupled to Al. Our work establishes a realistic platform for building robust Majorana-based qubits.
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Submitted 30 August, 2019;
originally announced August 2019.
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Interaction induced edge states in HgTe/CdTe Quantum Well under magnetic field
Authors:
Zewei Chen,
Tai Kai Ng
Abstract:
In this paper, we study doped HgTe/CdTe quantum well with Hubbard-type interaction under perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is strongly enhanced by interaction around the region when the band inversion of the topological insulator is destroyed by a magnetic field. The enhanced BIA term…
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In this paper, we study doped HgTe/CdTe quantum well with Hubbard-type interaction under perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is strongly enhanced by interaction around the region when the band inversion of the topological insulator is destroyed by a magnetic field. The enhanced BIA term creates edge-like electronic states which can explain the experimentally discovered edge conductance in doped HgTe/CdTe quantum well at similar magnetic field regime.
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Submitted 28 May, 2019; v1 submitted 12 June, 2018;
originally announced June 2018.
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Luttinger theorem and low energy properties of ideal Haldane-Sutherland Liquids
Authors:
Tai Kai Ng
Abstract:
We study in this paper the properties of a many body system of fermions obeying exclusion-statistics (Haldane liquid) where the origin of exclusion statistics is coming from an interaction-induced displacement field $\mathbf{a}_{\mathbf{k}}$ introduced by Sutherland (Haldane-Sutherland liquid). In particular we show how the Luttinger Theorem becomes compatible with exclusion statistics as a result…
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We study in this paper the properties of a many body system of fermions obeying exclusion-statistics (Haldane liquid) where the origin of exclusion statistics is coming from an interaction-induced displacement field $\mathbf{a}_{\mathbf{k}}$ introduced by Sutherland (Haldane-Sutherland liquid). In particular we show how the Luttinger Theorem becomes compatible with exclusion statistics as a result of momentum conservation and adiabaticity. As a result, the low energy properties of Haldane-Sutherland liquids are Fermi/Luttinger liquid-like.
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Submitted 9 January, 2018;
originally announced January 2018.
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An exactly solvable BCS-Hubbard Model in arbitrary dimensions
Authors:
Zewei Chen,
Xiaohui Li,
Tai Kai Ng
Abstract:
We introduce in this paper an exact solvable BCS-Hubbard model in arbitrary dimensions. The model describes a p-wave BCS superconductor with equal spin pairing moving on a bipartite (cubic, square etc.) lattice with on site Hubbard interaction $U$. We show that the model becomes exactly solvable for arbitrary $U$ when the BCS pairing amplitude $Δ$ equals the hopping amplitude $t$. The nature of th…
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We introduce in this paper an exact solvable BCS-Hubbard model in arbitrary dimensions. The model describes a p-wave BCS superconductor with equal spin pairing moving on a bipartite (cubic, square etc.) lattice with on site Hubbard interaction $U$. We show that the model becomes exactly solvable for arbitrary $U$ when the BCS pairing amplitude $Δ$ equals the hopping amplitude $t$. The nature of the solution is described in detail in this paper. The construction of the exact solution is parallel to the exactly solvable Kitaev honeycomb model for $S=1/2$ quantum spins and can be viewed as a generalization of Kitaev's construction to $S=1/2$ interacting lattice fermions. The BCS-Hubbard model discussed in this paper is just an example of a large class of exactly solvable lattice fermion models that can be constructed similarly.
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Submitted 2 October, 2017; v1 submitted 25 September, 2017;
originally announced September 2017.
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Magnetic properties of 2D topological insulators
Authors:
Zewei Chen,
Tai Kai Ng
Abstract:
The effects of Hubbard-type on-site interactions on the BHZ model is studied in this paper for model parameters appropriate for the HgTe/CdTe quantum well. Within a simple mean field theory we search for plausible magnetic instabilities in the model and find that the ground state becomes {\em ferromagnetic} when the interaction strength between electrons in hole orbital is strong enough. The resul…
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The effects of Hubbard-type on-site interactions on the BHZ model is studied in this paper for model parameters appropriate for the HgTe/CdTe quantum well. Within a simple mean field theory we search for plausible magnetic instabilities in the model and find that the ground state becomes {\em ferromagnetic} when the interaction strength between electrons in hole orbital is strong enough. The result can be understood by an approximate mapping of the Hubbard-BHZ model to the one band Hubbard model. The same mapping suggests that the magnetic and/or other ordered phases are more likely to occur in large gap topological insulators whose occupations are close to 1/2 for both electron and hole orbital.
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Submitted 21 March, 2017;
originally announced March 2017.
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Superfluid Density of a Spin-orbit Coupled Bose Gas
Authors:
Yi-Cai Zhang,
Zeng-Qiang Yu,
Tai Kai Ng,
Shizhong Zhang,
Lev Pitaevskii,
Sandro Stringari
Abstract:
We discuss the superfluid properties of a Bose-Einstein condensed gas with spin-orbit coupling, recently realized in experiments. We find a finite normal fluid density $ρ_n$ at zero temperature which turns out to be a function of the Raman coupling. In particular, the entire fluid becomes normal at the transition point from the zero momentum to the plane wave phase, even though the condensate frac…
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We discuss the superfluid properties of a Bose-Einstein condensed gas with spin-orbit coupling, recently realized in experiments. We find a finite normal fluid density $ρ_n$ at zero temperature which turns out to be a function of the Raman coupling. In particular, the entire fluid becomes normal at the transition point from the zero momentum to the plane wave phase, even though the condensate fraction remains finite. We emphasize the crucial role played by the gapped branch of the elementary excitations and discuss its contributions to various sum rules. Finally, we prove that an independent definition of superfluid density $ρ_s$, using the phase twist method, satisfies the equality $ρ_n+ρ_s=ρ$, the total density, despite the breaking of Galilean invariance.
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Submitted 6 May, 2016;
originally announced May 2016.
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Spontaneous modulation of superconducting phase in Kitaev ladder
Authors:
Sho Nakosai,
Yukio Tanaka,
Tai Kai Ng,
Naoto Nagaosa
Abstract:
We study theoretically the two Kitaev chains put in parallel, i.e., Kitaev ladder, coupled by Josephson junction. The $π$-junction between the Majorana bound states at the ends of the chains competes with the usual Josephson coupling along the chain, and this frustration leads to the modulation of the phase difference of the superconducting order parameter between the two chains. We show that this…
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We study theoretically the two Kitaev chains put in parallel, i.e., Kitaev ladder, coupled by Josephson junction. The $π$-junction between the Majorana bound states at the ends of the chains competes with the usual Josephson coupling along the chain, and this frustration leads to the modulation of the phase difference of the superconducting order parameter between the two chains. We show that this modulation gives the double degeneracy of the ground states, which can be manipulated by external electric and magnetic fields.
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Submitted 14 December, 2015;
originally announced December 2015.
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Anderson Impurity in the Bulk of 3D Topological Insulators: II. The Strong Coupling Regime
Authors:
Igor Kuzmenko,
Tetyana Kuzmenko,
Yshai Avishai,
Tai Kai Ng
Abstract:
Electron scattering off an Anderson impurity immersed in the bulk of a 3D topological insulator is studied in the strong coupling regime, where the temperature $T$ is lower than the Kondo temperature $T_K$. The system displays either a self-screened Kondo effect, or a Kondo effect with SO(3) or SO(4) dynamical symmetries. Low temperature Kondo scattering for systems with SO(3) symmetry displays th…
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Electron scattering off an Anderson impurity immersed in the bulk of a 3D topological insulator is studied in the strong coupling regime, where the temperature $T$ is lower than the Kondo temperature $T_K$. The system displays either a self-screened Kondo effect, or a Kondo effect with SO(3) or SO(4) dynamical symmetries. Low temperature Kondo scattering for systems with SO(3) symmetry displays the behavior of a singular Fermi liquid, an elusive property that so far has been observed only in tunneling experiments. This is demonstrated through the singular behavior as $T \to 0$ of the specific heat, magnetic susceptibility and impurity resistivity, that are calculated using well known (slightly adapted) conformal field theory techniques. Quite generally, the low temperature dependence of some of these observables displays a remarkable distinction between the SO(n=3,4) Kondo effect, compared with the standard SU(2) one.
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Submitted 3 March, 2016; v1 submitted 20 September, 2015;
originally announced September 2015.
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Chiral Topological Orders in an Optical Raman Lattice
Authors:
Xiong-Jun Liu,
Zheng-Xin Liu,
K. T. Law,
W. Vincent Liu,
T. K. Ng
Abstract:
We find an optical Raman lattice without spin-orbit coupling showing chiral topological orders for cold atoms. Two incident plane-wave lasers are applied to generate simultaneously a double-well square lattice and periodic Raman couplings, the latter of which drive the nearest-neighbor hopping and create a staggered flux pattern across the lattice. Such a minimal setup is can yield the quantum ano…
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We find an optical Raman lattice without spin-orbit coupling showing chiral topological orders for cold atoms. Two incident plane-wave lasers are applied to generate simultaneously a double-well square lattice and periodic Raman couplings, the latter of which drive the nearest-neighbor hopping and create a staggered flux pattern across the lattice. Such a minimal setup is can yield the quantum anomalous Hall effect in the single particle regime, while in the interacting regime it achieves the $J_1$-$J_2$-$K$ model with all parameters controllable, which supports a chiral spin liquid phase. We further show that heating in the present optical Raman lattice is reduced by more than one order of magnitude compared with the conventional laser-assisted tunneling schemes. This suggests that the predicted topological states be well reachable with the current experimental capability.
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Submitted 14 September, 2014; v1 submitted 15 May, 2014;
originally announced May 2014.
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Selective Equal-Spin Andreev Reflections Induced by Majorana Fermions
Authors:
James J. He,
T. K. Ng,
Patrick A. Lee,
K. T. Law
Abstract:
In this work, we find that Majorana fermions induce selective equal spin Andreev reflections (SESARs), in which incoming electrons with certain spin polarization in the lead are reflected as counter propagating holes with the same spin. The spin polarization direction of the electrons of this Andreev reflected channel is selected by the Majorana fermions. Moreover, electrons with opposite spin pol…
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In this work, we find that Majorana fermions induce selective equal spin Andreev reflections (SESARs), in which incoming electrons with certain spin polarization in the lead are reflected as counter propagating holes with the same spin. The spin polarization direction of the electrons of this Andreev reflected channel is selected by the Majorana fermions. Moreover, electrons with opposite spin polarization are always reflected as electrons with unchanged spin. As a result, the charge current in the lead is spin-polarized. Therefore, a topological superconductor which supports Majorana fermions can be used as a novel device to create fully spin-polarized currents in paramagnetic leads. We point out that SESARs can also be used to detect Majorana fermions in topological superconductors.
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Submitted 4 December, 2014; v1 submitted 5 September, 2013;
originally announced September 2013.
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Detecting Topological Phases in Cold Atoms
Authors:
Xiong-Jun Liu,
K. T. Law,
T. K. Ng,
Patrick A. Lee
Abstract:
Chern insulators are band insulators which exhibit a gap in the bulk and gapless excitations in the edge. Detection of Chern insulators is a serious challenge in cold atoms since the Hall transport measurements are technically unrealistic for neutral atoms. By establishing a natural correspondence between the time-reversal invariant topological insulator and quantum anomalous Hall system, we show…
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Chern insulators are band insulators which exhibit a gap in the bulk and gapless excitations in the edge. Detection of Chern insulators is a serious challenge in cold atoms since the Hall transport measurements are technically unrealistic for neutral atoms. By establishing a natural correspondence between the time-reversal invariant topological insulator and quantum anomalous Hall system, we show for a class of Chern insulators that the topology can be determined by only measuring Bloch eigenstates at highly symmetric points of the Brillouin zone (BZ). Furthermore, we introduce two experimental schemes including the spin-resolved Bloch oscillation to carry out the measurement. These schemes are highly feasible under realistic experimental conditions. Our results may provide a powerful tool to detect topological phases in cold atoms.
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Submitted 1 September, 2013; v1 submitted 21 June, 2013;
originally announced June 2013.
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Realization of 2D Spin-orbit Interaction and Exotic Topological Orders in Cold Atoms
Authors:
Xiong-Jun Liu,
K. T. Law,
T. K. Ng
Abstract:
Majorana zero bound mode exists in the vortex core of a chiral $p+ip$ superconductor or superfluid, which can be driven from an s-wave pairing state by two-dimensional (2D) spin-orbit (SO) coupling. We propose here a novel scheme based on realistic cold atom platforms to generate 2D SO interactions in a blue-detuned square optical lattice, and predict both the quantum anomalous Hall effect and chi…
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Majorana zero bound mode exists in the vortex core of a chiral $p+ip$ superconductor or superfluid, which can be driven from an s-wave pairing state by two-dimensional (2D) spin-orbit (SO) coupling. We propose here a novel scheme based on realistic cold atom platforms to generate 2D SO interactions in a blue-detuned square optical lattice, and predict both the quantum anomalous Hall effect and chiral topological superfluid phase in the experimentally accessible parameter regimes. This work opens a new direction with experimental feasibility to observe non-Abelian topological orders in cold atom systems.
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Submitted 10 October, 2013; v1 submitted 31 March, 2013;
originally announced April 2013.
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Renormalization Group Approach to Anderson Impurity in the Bulk of Topological Insulators
Authors:
Igor Kuzmenko,
Yshai Avishai,
Tai Kai Ng
Abstract:
It has been recently suggested that when an Anderson impurity is immersed in the bulk of a topological insulator, a Kondo resonant peak will appear simultaneously with an in-gap bound-state when the band-dispersion has an "inverted-Mexican-hat" form. The mid-gap bound-state generates another spin state and the Kondo effect is thereby screened. In this paper we study this problem within a weak-coup…
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It has been recently suggested that when an Anderson impurity is immersed in the bulk of a topological insulator, a Kondo resonant peak will appear simultaneously with an in-gap bound-state when the band-dispersion has an "inverted-Mexican-hat" form. The mid-gap bound-state generates another spin state and the Kondo effect is thereby screened. In this paper we study this problem within a weak-coupling RG scheme where we show that the system exhibits complex crossover behavior between different symmetry configurations and may evolve into a self-screened-Kondo or SO(3) low energy fix point. Experimental consequences of this scenario are pointed out.
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Submitted 4 January, 2014; v1 submitted 4 March, 2013;
originally announced March 2013.
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Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film
Authors:
Damián P. San-Román-Alerigi,
Dalaver H. Anjum,
Yaping Zhang,
Xiaoming Yang,
Ahmed Benslimane,
Tien K. Ng,
Mohammad Alsunaidi,
Boon S. Ooi
Abstract:
We investigate the effect of electron beam irradiation on the dielectric properties of As2S3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show, to the best of ou…
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We investigate the effect of electron beam irradiation on the dielectric properties of As2S3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show, to the best of our knowledge, a heretofore unseen phenomenon: the reduction in the permittivity of <40%, and consequently a modification of the refractive index follows, reducing it by 20%, hence suggesting a significant change on the optical properties of the material. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption.
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Submitted 29 March, 2013; v1 submitted 22 August, 2012;
originally announced August 2012.
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Magnetic field-induced instability of the cooperative paramagnetic state in Zn$_x$Co$_{4-x}$(OD)$_6$Cl$_2$
Authors:
S. E. Dissanayake,
C. Chan,
S. Ji,
J. Lee,
Y. Qiu,
K. C. Rule,
B. Lake,
M. Green,
M. Hagihala,
X. G. Zheng,
T. K. Ng,
S. -H. Lee
Abstract:
Using elastic and inelastic neutron scattering techniques with and without application of an external magnetic field $H$, the magnetic ground states of Zn$_x$Co$_{4-x}$(OD)$_6$Cl$_2$ ($x=0,1$) were studied. Our results show that for $x=0$, the ground state is a magnetic long-range ordered (LRO) state where each tetrahedron forms an "umbrella"-type structure. On the other hand, for $x=1$, no static…
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Using elastic and inelastic neutron scattering techniques with and without application of an external magnetic field $H$, the magnetic ground states of Zn$_x$Co$_{4-x}$(OD)$_6$Cl$_2$ ($x=0,1$) were studied. Our results show that for $x=0$, the ground state is a magnetic long-range ordered (LRO) state where each tetrahedron forms an "umbrella"-type structure. On the other hand, for $x=1$, no static ordering was observed down to 1.5 K, which resembles the behavior found in the isostructural quantum system Zn$_x$Cu$_{4-x}$(OD)$_6$Cl$_2$. When $H$ field is applied, however the $x=1$ system develops the same LRO state as $x=0$. This indicates that the $x=1$ disordered state is in the vicinity of the $x=0$ ordered state.
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Submitted 28 March, 2012;
originally announced March 2012.
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Out of plane screening and dipolar interactions in heterostructures
Authors:
Cheung Chan,
T. K. Ng
Abstract:
Out-of-plane screening (OPS) is expected to occur generally in metal-semiconductor interfaces but this aspect has been overlooked in previous studies. In this paper we study the effect of OPS in electron-hole bilayer (EHBL) systems. The validity of the dipolar interaction induced by OPS is justified with a RPA calculation. Effect of OPS in electron-hole liquid with close-by screening layers is s…
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Out-of-plane screening (OPS) is expected to occur generally in metal-semiconductor interfaces but this aspect has been overlooked in previous studies. In this paper we study the effect of OPS in electron-hole bilayer (EHBL) systems. The validity of the dipolar interaction induced by OPS is justified with a RPA calculation. Effect of OPS in electron-hole liquid with close-by screening layers is studied. We find that OPS affects the electronic properties in low density and long wavelength regime. The corresponding zero-temperature phase diagram is obtained within a mean field treatment. We argue that our result is in general relevant to other heterostrucutures. The case of strongly correlated EHBL is also discussed.
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Submitted 15 February, 2010;
originally announced February 2010.
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Majorana Fermion Induced Resonant Andreev Reflection
Authors:
K. T. Law,
Patrick A. Lee,
T. K. Ng
Abstract:
We describe experimental signatures of Majorana fermion edge states, which form at the interface between a superconductor and the surface of a topological insulator. If a lead couples to the Majorana fermions through electron tunneling, the Majorana fermions induce \textit{resonant} Andreev reflections from the lead to the grounded superconductor. The linear tunneling conductance is $0 $ (…
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We describe experimental signatures of Majorana fermion edge states, which form at the interface between a superconductor and the surface of a topological insulator. If a lead couples to the Majorana fermions through electron tunneling, the Majorana fermions induce \textit{resonant} Andreev reflections from the lead to the grounded superconductor. The linear tunneling conductance is $0 $ ($2 e^2/h$) if there is an even (odd) number of vortices in the superconductor. Similar resonance occurs for tunneling into the zero mode in the vortex core. We also study the current and noise of a two-lead device.
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Submitted 21 July, 2009; v1 submitted 10 July, 2009;
originally announced July 2009.
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Non-Magnetic Impurity induced in-gap bound states in two band $s_{\pm}$ superconductors
Authors:
T. K. Ng,
Y. Avishai
Abstract:
In this paper we study the effect of single non-magnetic impurity in two-band s-wave superconductors where the two s-wave order parameters have relative phase $δ\neq0$ between them. We show that in-gap bound states are always induced by non-magnetic impurities when $δ=π$ ($s_{\pm}$-wave superconductors). The bound state is a consequence of the topological nature of the corresponding Bogoliubov-d…
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In this paper we study the effect of single non-magnetic impurity in two-band s-wave superconductors where the two s-wave order parameters have relative phase $δ\neq0$ between them. We show that in-gap bound states are always induced by non-magnetic impurities when $δ=π$ ($s_{\pm}$-wave superconductors). The bound state is a consequence of the topological nature of the corresponding Bogoliubov-de Gennes equation.
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Submitted 12 June, 2009;
originally announced June 2009.
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Broken Time-reversal Symmetry in Josephson Junction with an Anderson impurity and multi band superconductors
Authors:
Y. Avishai,
T. K. Ng
Abstract:
A Josephson junction consisting of an Anderson impurity weakly coupled with two-band and single-band superconductors exposes a time reversal breaking ground state when the coupling between the two bands exceeds a certain threshold. The critical regime occurs around local moment formation.
This indicates a fundamental and distinct role of strong correlations: Driving a system into a time revers…
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A Josephson junction consisting of an Anderson impurity weakly coupled with two-band and single-band superconductors exposes a time reversal breaking ground state when the coupling between the two bands exceeds a certain threshold. The critical regime occurs around local moment formation.
This indicates a fundamental and distinct role of strong correlations: Driving a system into a time reversal breaking ground state. One of the observable consequences is that the impurity magnetization in this phase is reduced.
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Submitted 12 May, 2009; v1 submitted 5 May, 2009;
originally announced May 2009.
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Quantum Dot in 2D Topological Insulator: The Two-channel Kondo Fixed Point
Authors:
K. T. Law,
C. Y. Seng,
Patrick A. Lee,
T. K. Ng
Abstract:
In this work, a quantum dot couples to two helical edge states of a 2D topological insulator through weak tunnelings is studied. We show that if the electron interactions on the edge states are repulsive, with Luttinger liquid parameter $ K < 1 $, the system flows to a stable two-channel fixed point at low temperatures. This is in contrast to the case of a quantum dot couples to two Luttinger li…
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In this work, a quantum dot couples to two helical edge states of a 2D topological insulator through weak tunnelings is studied. We show that if the electron interactions on the edge states are repulsive, with Luttinger liquid parameter $ K < 1 $, the system flows to a stable two-channel fixed point at low temperatures. This is in contrast to the case of a quantum dot couples to two Luttinger liquid leads. In the latter case, a strong electron-electron repulsion is needed, with $ K<1/2 $, to reach the two-channel fixed point. This two-channel fixed point is described by a boundary Sine-Gordon Hamiltonian with a $K$ dependent boundary term. The impurity entropy at zero temperature is shown to be $ \ln\sqrt{2K} $. The impurity specific heat is $C \propto T^{\frac{2}{K}-2}$ when $ 2/3 < K < 1 $, and $ C \propto T$ when $ K<2/3$. We also show that the linear conductance across the two helical edges has non-trivial temperature dependence as a result of the renormalization group flow.
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Submitted 15 April, 2009;
originally announced April 2009.
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Broken time-reversal symmetry in Josephson junction involving two-band superconductors
Authors:
T. K. Ng,
N. Nagaosa
Abstract:
A novel time-reversal symmetry breaking state is found theoretically in the Josephson junction between the two-gap superconductor and the conventional s-wave superconductor. This occurs due to the frustration between the three order parameters analogous to the two antiferromagnetically coupled XY-spins put under a magnetic field. This leads to the interface states with the energies inside the su…
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A novel time-reversal symmetry breaking state is found theoretically in the Josephson junction between the two-gap superconductor and the conventional s-wave superconductor. This occurs due to the frustration between the three order parameters analogous to the two antiferromagnetically coupled XY-spins put under a magnetic field. This leads to the interface states with the energies inside the superconducting gap. Possible experimental observations of this state with broken time-reversal symmetry are discussed.
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Submitted 19 September, 2008;
originally announced September 2008.
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Suppression of superfluid density in the superfluid-supersolid transition
Authors:
Tai Kai Ng
Abstract:
We show that the rather unexpected pressure dependence of superfluid density observed near the superfluid-supersolid transition by Kim {\em et.al.}[M.H.W. Chan, {\em private communication}], can be understood if the transition from superfluid to supersolid state is a second order or weakly first order transition from the superfluid state to a super-CDW state with non-uniform Bose-condensation am…
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We show that the rather unexpected pressure dependence of superfluid density observed near the superfluid-supersolid transition by Kim {\em et.al.}[M.H.W. Chan, {\em private communication}], can be understood if the transition from superfluid to supersolid state is a second order or weakly first order transition from the superfluid state to a super-CDW state with non-uniform Bose-condensation amplitude. The suppression of superfluid density is a direct consequence of softening of phonon mode at finite wave-vector $|\vec{Q}|\sim Q_0$ around the quantum phase transition.
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Submitted 24 January, 2006; v1 submitted 15 September, 2005;
originally announced September 2005.
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Quantum coherence and Kondo effect in multi quantum dot systems
Authors:
Xi Dai,
T. K. Ng
Abstract:
The quantum interference effect among coupled identical quantum dots is studied in the present paper in the limit of strong intra-dot Coulomb interaction. When the average electron number in each dot is a fraction of an integer, quantum interference effect is greatly enhanced because of the sharing of extra electrons by multiple dots. We show that if the extra electron (hole) number is one, the…
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The quantum interference effect among coupled identical quantum dots is studied in the present paper in the limit of strong intra-dot Coulomb interaction. When the average electron number in each dot is a fraction of an integer, quantum interference effect is greatly enhanced because of the sharing of extra electrons by multiple dots. We show that if the extra electron (hole) number is one, the low energy effective Hamiltonian can be map into the 2-channel SU(M) Coqblin-Schriffer model, where M is the total dot number. In particular, for two-dot system with odd number of total electrons, the model is equivalent to a two channel Kondo problem with anisotropic coupling between local spin and conduction bands. The more general situation with (arbitrary) fractional average electron number in each dot is also discussed. To study the Kondo effect, we apply the self consistent ladder approximation(SCLA) to study the electron spectral function for the two-dot system. Similar method is also used to study the triple-dot system where we show how quantum coherence manifest itself in the Aharonov-Bohm (AB) effect.
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Submitted 16 March, 2004;
originally announced March 2004.
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Some Experimental Signatures to look for Time-reversal Violating superconductors
Authors:
T. K. Ng,
C. M. Varma
Abstract:
We discuss some experimental signatures associated with the topological structures of unconventional superconductor order parameters of form $d_{x^2-y^2}+ix$, where $x=s,p_x \pm p_y$, or $d_{xy}$. Specifically, we study the topological surface states on the $(110)$ and equivalent surfaces of such superconductors which are observable in Andreev tunneling experiments, as well as evaluate the magne…
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We discuss some experimental signatures associated with the topological structures of unconventional superconductor order parameters of form $d_{x^2-y^2}+ix$, where $x=s,p_x \pm p_y$, or $d_{xy}$. Specifically, we study the topological surface states on the $(110)$ and equivalent surfaces of such superconductors which are observable in Andreev tunneling experiments, as well as evaluate the magnetic flux trapped in superconducting rings of such superconductors with multiple grain-boundary Josephson junctions. Previous experiments are examined and several new experiments suggested.
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Submitted 16 March, 2004;
originally announced March 2004.
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Ferroelectrics with Low-energy Electronic Excitations
Authors:
T. K. Ng,
C. M. Varma
Abstract:
We formulate a general theory of the dielectric response of a lattice with a structural transition and a polarization instability due to a soft-optic mode coupled to low energy electronic excitations by the electromagnetic fields. the electronic excitations considered are in two-limits; those of a low density of free-electrons or those of a low density of strongly localized electrons in the Coul…
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We formulate a general theory of the dielectric response of a lattice with a structural transition and a polarization instability due to a soft-optic mode coupled to low energy electronic excitations by the electromagnetic fields. the electronic excitations considered are in two-limits; those of a low density of free-electrons or those of a low density of strongly localized electrons in the Coulomb-glass phase. The ferroelectric transition in the absence of the electronic-excitations and the low energy dielectric properties are shown to be strongly modified.
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Submitted 2 February, 2001;
originally announced February 2001.
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On the possibility of a metallic phase in granular superconducting films
Authors:
Tai Kai Ng,
Derek K K Lee
Abstract:
We investigate the possibility of finding a zero-temperature metallic phase in granular superconducting films. We are able to identify the breakdown of the conventional treatment of these systems as dissipative Bose systems. We do not find a metallic state at zero temperature. At finite temperatures, we find that the system exhibit crossover behaviour which may have implications for the analysis…
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We investigate the possibility of finding a zero-temperature metallic phase in granular superconducting films. We are able to identify the breakdown of the conventional treatment of these systems as dissipative Bose systems. We do not find a metallic state at zero temperature. At finite temperatures, we find that the system exhibit crossover behaviour which may have implications for the analysis of experimental results. We also investigate the effect of vortex dissipation in these systems.
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Submitted 10 July, 2000;
originally announced July 2000.
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Re-examination of electronic transports through a quantum wire coupled to a quantum dot
Authors:
Yu-Liang Liu,
T. K. Ng
Abstract:
In this paper we re-examine the problem of electronic transports through a system consisting of a quantum dot which has well-defined discrete energy levels connected to an infinite quantum wire, using the bosonization method and phase shift representation, we show that all previously known results can be obtained through our method in a very simple way. Furthermore, the evolution of the system f…
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In this paper we re-examine the problem of electronic transports through a system consisting of a quantum dot which has well-defined discrete energy levels connected to an infinite quantum wire, using the bosonization method and phase shift representation, we show that all previously known results can be obtained through our method in a very simple way. Furthermore, the evolution of the system from ultraviolet to infrared critical fixed points appears naturally our method.
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Submitted 11 December, 1999;
originally announced December 1999.
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Duality picture between antiferromagnetism and d-wave superconductivity in t-J model at two dimensions
Authors:
Tai Kai Ng
Abstract:
We show in this paper an interesting relation between elementary and topological excitations in the antiferromagnetic and d-wave superconducting phases of the t-J model at two dimenions. The topological spin and charge excitations in one phase have the same dynamics as elementary excitations in the other phase, except the appearance of energy gaps. Moreover, the transition from one phase to anot…
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We show in this paper an interesting relation between elementary and topological excitations in the antiferromagnetic and d-wave superconducting phases of the t-J model at two dimenions. The topological spin and charge excitations in one phase have the same dynamics as elementary excitations in the other phase, except the appearance of energy gaps. Moreover, the transition from one phase to another can be described as a quantum disordering transition associated with the topological excitations. Based on the above picture, a plausible phase diagram of t-J model is constructed.
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Submitted 7 November, 1999;
originally announced November 1999.
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Bosonization theory of fermions interacting via a confining potential
Authors:
T. K. Ng
Abstract:
We study in this paper the properties of a gas of fermions interacting {\em via} a scalar potential $v(q)=4π{e}^2/q^2$ for $q<Λ<<k_F$ at dimensions larger than one, where $Λ$ is a high momentum cutoff and $k_F$ is the fermi wave vector. In particular, we shall consider the $e^2\to\infty$ limit where the potential becomes confining. Within a bosonization approximation, effective Hamiltonians desc…
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We study in this paper the properties of a gas of fermions interacting {\em via} a scalar potential $v(q)=4π{e}^2/q^2$ for $q<Λ<<k_F$ at dimensions larger than one, where $Λ$ is a high momentum cutoff and $k_F$ is the fermi wave vector. In particular, we shall consider the $e^2\to\infty$ limit where the potential becomes confining. Within a bosonization approximation, effective Hamiltonians describing the low energy physics of the system are constructed, where we show that the system can be described as a fermi liquid formed by chargeless quasi-particles which has vanishing wavefunction overlap with the bare fermions in the system.
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Submitted 11 August, 1999;
originally announced August 1999.
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A model of marginal Fermi liquid superconductor at two dimensions
Authors:
Y. L. Liu,
T. K. Ng
Abstract:
In this paper we study a model of s-wave marginal Fermi liquid superconductor at two dimensions. Besides the usual Bardeen-Cooper-Schrieffer(BCS) point attractive interaction, the fermions in our system also interact {\em via} a long range repulsive interaction $v(q)=g_{D}/q^2$. We find that although superconductivity is not destroyed by the long-ranged repulsion interaction (demonstrated by the…
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In this paper we study a model of s-wave marginal Fermi liquid superconductor at two dimensions. Besides the usual Bardeen-Cooper-Schrieffer(BCS) point attractive interaction, the fermions in our system also interact {\em via} a long range repulsive interaction $v(q)=g_{D}/q^2$. We find that although superconductivity is not destroyed by the long-ranged repulsion interaction (demonstrated by the existence of Meissner effect), nevertheless the BCS pairing function $Δ_{BCS}$ is strongly suppressed resulting in power-law correlation $<Δ_{BCS}(\vec{x})Δ_{BCS}(0)>\sim|\vec{x}|^{-2γ}$. This observation is explained within a general picture of marginal Fermi liquid.
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Submitted 11 August, 1999;
originally announced August 1999.
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Supersymmetric Mean-Field Theory of t-J Model
Authors:
Chi-Ho Cheng,
T. K. Ng
Abstract:
The supersymmetric formulation of t-J model is studied in this paper at the mean-field level where $δ$-T phase diagram is computed. We find that slave-fermion-like spiral phase is stable at low doping concentration, and the slave-boson-like d-wave fermionic spin pairing state becomes energetically favourable when $δ\geq$ 0.23. An improvement in free energy using Gutzwiller's method lowers the tr…
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The supersymmetric formulation of t-J model is studied in this paper at the mean-field level where $δ$-T phase diagram is computed. We find that slave-fermion-like spiral phase is stable at low doping concentration, and the slave-boson-like d-wave fermionic spin pairing state becomes energetically favourable when $δ\geq$ 0.23. An improvement in free energy using Gutzwiller's method lowers the transition doping concentration to 0.06. We also point out the existence of new branches of excitations in the supersymmetric theory.
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Submitted 11 August, 1999;
originally announced August 1999.
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Supersymmetry in models with strong on-site Coulomb repulsion - application to t-J model
Authors:
T. K. Ng,
Chi-Ho Cheng
Abstract:
A supersymmetric way of imposing the constraint of no double occupancy in models with strong on-site Coulomb repulsion is presented in this paper. In this formulation the physical operators in the constrainted Hilbert space are invariant under local unitary transformations mixing boson and fermion representations. As an illustration the formulation is applied to the $t-J$ model. The model is stu…
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A supersymmetric way of imposing the constraint of no double occupancy in models with strong on-site Coulomb repulsion is presented in this paper. In this formulation the physical operators in the constrainted Hilbert space are invariant under local unitary transformations mixing boson and fermion representations. As an illustration the formulation is applied to the $t-J$ model. The model is studied in the mean-field level in the J=0 limit where we show how both the slave-boson and slave-fermion formulations are included naturally in the present approach and how further results beyond both approaches are obtained.
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Submitted 6 February, 1998;
originally announced February 1998.
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Tilting instability and other anomalies in the flux-lattice in some magnetic superconductors
Authors:
T. K. Ng,
C. M. Varma
Abstract:
The flux-line lattice in the compound $ErNi_2B_2C$, which has a tendency to ferromagnetic order in the a-b plane is studied with external magnetic field direction close to the c-axis. We show the existence of an instability where the direction of flux-lines spontaneously tilts away from that of the applied field near the onset of ferromagnetic order. The enhanced fluctuations in the flux lattice…
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The flux-line lattice in the compound $ErNi_2B_2C$, which has a tendency to ferromagnetic order in the a-b plane is studied with external magnetic field direction close to the c-axis. We show the existence of an instability where the direction of flux-lines spontaneously tilts away from that of the applied field near the onset of ferromagnetic order. The enhanced fluctuations in the flux lattice and the square flux lattice recently observed are explained and further experiments suggested.
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Submitted 12 February, 1997;
originally announced February 1997.