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Josephson vortex system in a flux-flow regime in electron doped high-Tc superconductor Nd(2-x)CexCuO4
Authors:
T. B. Charikova,
A. M. Bartashevich,
V. N. Neverov,
M. R. Popov,
N. G. Shelushinina,
A. A. Ivanov
Abstract:
For an epitaxial film of an electron-doped superconductor Nd(2-x)CexCuO4 (x=0.145), in a mixed state, a well-defined step structure is observed on the dependence of the c-axis flux-flow resistance on the magnetic field parralel to CuO2 layers. It is shown that in the region of a free flow of Josephson vortices, the structure is periodic with a period of deltaB~Phi0/(lambdaablambdac). It is essenti…
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For an epitaxial film of an electron-doped superconductor Nd(2-x)CexCuO4 (x=0.145), in a mixed state, a well-defined step structure is observed on the dependence of the c-axis flux-flow resistance on the magnetic field parralel to CuO2 layers. It is shown that in the region of a free flow of Josephson vortices, the structure is periodic with a period of deltaB~Phi0/(lambdaablambdac). It is essential that the magnetic penetration depths in the ab-plane (lambdaab) and along the c-axis (lambdac) determine the sizes of the Josephson vortices in the Lawrence-Doniach model for an anisotropic layered superconductor.
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Submitted 24 February, 2025;
originally announced February 2025.
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Intrinsic Josephson junction characteristics of Nd2-xCexCuO4/SrTiO3 epitaxial films
Authors:
T. B. Charikova,
D. I. Devyaterikov,
V. N. Neverov,
M. R. Popov,
N. G. Shelushinina,
A. A. Ivanov
Abstract:
The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4 /SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established that the I-V characteristics exhibit several resistive branches, which correspond to the resistive states of individual Josephson junctions. The results confirm the idea of a tunneling mechanism between the CuO2 layers (su…
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The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4 /SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established that the I-V characteristics exhibit several resistive branches, which correspond to the resistive states of individual Josephson junctions. The results confirm the idea of a tunneling mechanism between the CuO2 layers (superconductor - insulator - superconductor junction) for the investigated Nd2-xCexCuO4 compound. The I-V dependence of this compound with x = 0.15 points out on the nonmonotonic nature of the d-wave or anisotropic s-wave symmetry order parameter associated with the coexistence of superconductivity and antiferromagnetic fluctuations.
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Submitted 1 October, 2024;
originally announced October 2024.
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Magnetotransport in Weyl semimetal WTe2 single crystal
Authors:
A. N. Perevalova,
B. M. Fominykh,
V. V. Chistyakov,
S. V. Naumov,
V. N. Neverov,
V. V. Marchenkov
Abstract:
A WTe2 single crystal was grown by the chemical vapor transport method, and its electrical resistivity and galvanomagnetic properties were investigated. Single-band and two-band models were used to estimate the concentration and mobility of charge carriers in WTe2 at temperatures from 4.2 to 150 K.
A WTe2 single crystal was grown by the chemical vapor transport method, and its electrical resistivity and galvanomagnetic properties were investigated. Single-band and two-band models were used to estimate the concentration and mobility of charge carriers in WTe2 at temperatures from 4.2 to 150 K.
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Submitted 30 June, 2023;
originally announced July 2023.
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Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites
Authors:
A. G. Gamzatov,
A. B. Batdalov,
A. M. Aliev,
P. D. H. Yen,
S. V. Gudina,
V. N. Neverov,
T. D. Thanh,
N. T. Dung,
S. -C. Yu,
D-H. Kim,
M. H. Phan
Abstract:
We present the results of a comparative analysis of the magnetocaloric effect (MCE) in Pr0.7Sr0.2Ca0.1MnO3, through direct and indirect measurements, using experimentally measured magnetization, specific heat, magnetostriction, resistivity, thermal diffusivity and thermal conductivity parameters. We have demonstrated that the change in each parameter in response to a magnetic field near the ferrom…
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We present the results of a comparative analysis of the magnetocaloric effect (MCE) in Pr0.7Sr0.2Ca0.1MnO3, through direct and indirect measurements, using experimentally measured magnetization, specific heat, magnetostriction, resistivity, thermal diffusivity and thermal conductivity parameters. We have demonstrated that the change in each parameter in response to a magnetic field near the ferromagnetic-paramagnetic phase transition temperature of the material correlates with the change in magnetic entropy. These findings allow us to interrelate these parameters and provide an alternative, effective approach for accessing the usefulness of magnetocaloric materials.
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Submitted 10 May, 2020;
originally announced May 2020.
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Unconventional Reentrant Quantum Hall Effect in a HgTe/CdHgTe Double Quantum Well
Authors:
M. V. Yakunin,
S. S. Krishtopenko,
S. M. Podgornykh,
M. R. Popov,
V. N. Neverov,
B. Jouault,
W. Desrat,
F. Teppe,
S. A. Dvoretsky,
N. N. Mikhailov
Abstract:
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant function of magnetic field between two $i=2$ states (plateaus at $ρ_{xy}=h/ie^2$) separated by an intermediate $i=1$ state, which looks like some anomalous peak on t…
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We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant function of magnetic field between two $i=2$ states (plateaus at $ρ_{xy}=h/ie^2$) separated by an intermediate $i=1$ state, which looks like some anomalous peak on the extra-long $i=2$ plateau when weakly expressed. The anomalous peak apparently separates two different regimes: a traditional QHE at relatively weak fields for a small density of mobile holes $p_s$ and a high-field QH structure with a $2-1$ plateau--plateau transition corresponding to much larger $p_s$. We show that only a part of holes, residing in an additional light hole subband in the DQW, participate in QHE at weak fields while the rest of holes is excluded into the reservoir formed in the lateral maximum of the valence subband. All the holes come into play at high fields due to a peculiar behavior of the zero-mode levels.
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Submitted 16 November, 2018;
originally announced November 2018.
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Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
Authors:
S. V. Gudina,
Yu. G. Arapov,
V. N. Neverov,
A. P. Savelyev,
S. M. Podgonykh,
N. G. Shelushinina,
M. V. Yakunin
Abstract:
We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature…
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We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature range from 10 K up to (45-60) K, wich covers the ballistic interaction regimes for our samples, a rather good agreement between the theory and our experimental results has been found.
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Submitted 27 August, 2018;
originally announced August 2018.
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Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations
Authors:
S. B. Bobin,
A. T. Lonchakov,
V. V. Deryushkin,
V. N. Neverov
Abstract:
In this paper, the authors report the results of an experimental study of effective mass, electron mobility and phase shift of Shubnikov de Haas oscillations of transverse magnetoresistance in an extended electron concentration region from 8.8*10^15 cm^-3 to 4.3*10^18 cm^-3 in single crystals of mercury selenide. The revealed features confirm the existence of a Weyl semimetal phase in HgSe at low…
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In this paper, the authors report the results of an experimental study of effective mass, electron mobility and phase shift of Shubnikov de Haas oscillations of transverse magnetoresistance in an extended electron concentration region from 8.8*10^15 cm^-3 to 4.3*10^18 cm^-3 in single crystals of mercury selenide. The revealed features confirm the existence of a Weyl semimetal phase in HgSe at low electron density, which has been indicated by previous magnetotransport studies. However, the most significant result is the discovery of an abrupt change of Berry phase of Pi at electron concentration 2*10^18 cm^-3, which we explain in terms of a manifestation of topological Lifshitz transition in HgSe that occurs by tuning Fermi energy via doping.
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Submitted 10 January, 2019; v1 submitted 5 July, 2018;
originally announced July 2018.
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Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure
Authors:
S. V. Gudina,
Yu. G. Arapov,
V. N. Neverov,
E. G. Novik,
S. M. Podgornykh,
M. R. Popov,
E. V. Ilchenko,
N. G. Shelushinina,
M. V. Yakunin,
N. N. Mikhailov,
S. A. Dvoretsky
Abstract:
We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented i…
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We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Estimations for the degree of the carrier localization length divergence reveal a decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization - delocalization processes in the QH regime for the system under study.
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Submitted 15 December, 2017; v1 submitted 13 December, 2017;
originally announced December 2017.
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Novel magnetoresistance features in HgSe single crystal with low electron concentration
Authors:
A. T. Lonchakov,
S. B. Bobin,
V. V. Deryushkin,
V. I. Okulov,
T. E. Govorkova,
V. N. Neverov
Abstract:
For the first time, magnetoresistive properties of the single crystal of HgSe with a low electron concentration were studied in wide range of temperature and magnetic field. Some fundamental parameters of spectrum and scattering of electrons were experimentally determined. Two important features of magnetic transport were found - strong transverse magnetoresistance (MR) and negative longitudinal M…
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For the first time, magnetoresistive properties of the single crystal of HgSe with a low electron concentration were studied in wide range of temperature and magnetic field. Some fundamental parameters of spectrum and scattering of electrons were experimentally determined. Two important features of magnetic transport were found - strong transverse magnetoresistance (MR) and negative longitudinal MR, which can indicate the existence of the topological phase of the Weyl semimetal (WSM) in HgSe. Taking this hypothesis into account we suggest a modified band diagram of the mercury selenide at low electron energies. The obtained results are essential for the deeper understanding of both physics of gapless semiconductors and WSMs - promising materials for various applications in electronics, spintronics, computer and laser technologies.
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Submitted 6 December, 2017;
originally announced December 2017.
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Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
V. N. Neverov,
D. S. Petukhov,
O. E. Petukhova,
A. A. Ivanov
Abstract:
We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the c…
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We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the critical temperature decrease with increasing of the disorder parameter (d-wave pairing) while in the case of the underdoped system the critical temperature remains constant and (dHc2/dT)|Tc increases with increasing of the disorder (s-wave pairing). These features suggest a possible implementation of the complex mixture state as the (s+id)-pairing.
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Submitted 2 September, 2014;
originally announced September 2014.
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Upper critical field in electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$: two-gap model
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
D. S. Petukhov,
V. N. Neverov,
A. A. Ivanov
Abstract:
We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.
We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.
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Submitted 26 December, 2012;
originally announced December 2012.
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Doping effect on the anomalous behavior of the Hall effect in electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
D. S. Petukhov,
A. V. Korolev,
V. N. Neverov,
A. A. Ivanov
Abstract:
Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with…
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Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with $R_H$$^n$(x) analysis an anomalous sign reversal of Hall effect in mixed state at $B<B_{c2}$ may be ascribed to a flux-flow regime for two types of carriers with opposite charges.
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Submitted 29 September, 2011;
originally announced September 2011.
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Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder
Authors:
T. B. Charikova,
N. G. Shelushinina,
G. I. Harus,
V. N. Neverov,
D. S. Petukhov,
O. E. Sochinskaya,
A. A. Ivanov
Abstract:
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of…
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Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of the back-flow of vortices owing to the pinning forces.
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Submitted 1 October, 2010;
originally announced October 2010.
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Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
Authors:
Yu. G. Arapov,
S. V. Gudina,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
M. V. Yakunin,
S. M. Podgornyh,
E. A. Uskova,
B. N. Zvonkov
Abstract:
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0…
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The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence.
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Submitted 28 December, 2005;
originally announced December 2005.
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Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
Authors:
Yu. G. Arapov,
V. N. Neverov,
G. I. Harus,
N. G. Shelushinina,
M. V. Yakunin,
O. A. Kuznetsov,
A. de Visser,
L. Ponomarenko
Abstract:
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) be…
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For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.
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Submitted 15 April, 2004;
originally announced April 2004.
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Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov,
B. N. Zvonkov,
E. A. Uskova,
L. Ponomarenko,
A. de Visser
Abstract:
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect…
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In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglected in the GaAs/AlGaAs heterostructures, for which solely the effects of this nature have been observed so far. In Ge/p-Ge_{1-x}Si_x DQWs containing a hole gas, local MR peculiarities under parallel fields are discovered as well. But the tunnel gap in these DQWs is too narrow to be responsible for these observations. We suppose, they are due to a complicated shape of the hole confinement subbands.
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Submitted 6 June, 2003;
originally announced June 2003.
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Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures
Authors:
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
A. T. Lonchakov,
N. G. Shelushinina,
M. V. Yakunin
Abstract:
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samp…
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We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute such a behavior to the interplay of two types of holes due to partial filling of the second subband. Extrapolation of the observed high-field parabolic MR to B = 0 allows to separate WL and EEI contributions to the total quantum corrections to conductivity at B = 0 resulting for both of our structures in that EEI part is ~2/3 and the WL part is ~1/3.
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Submitted 27 December, 2002;
originally announced December 2002.
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Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures
Authors:
Yu. G. Arapov,
G. I. Harus,
O. A. Kuznetsov,
V. N. Neverov,
N. G. Shelushinina
Abstract:
Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attr…
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Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attributed to the interplay of the classical cyclotron motion and the EEI effect. The Hartree part of the interaction constant is estimated (F_/sigma = 0.44) and the WL and EEI contributions to the total quantum correction /Delta /sigma at B = 0 are separated (/Delta /sigma_{WL} ~ 0.3/Delta /sigma; /Delta /sigma_{EEI} ~ 0.7/Delta /sigma).
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Submitted 21 March, 2002;
originally announced March 2002.
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The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Authors:
Yu. G. Arapov,
G. A. Alshanskii,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
M. V. Yakunin,
O. A. Kuznetsov
Abstract:
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside t…
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We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models. For half-integer filling factors the linear temperature dependence of the effective QHE plateau-to-plateau transition width nu_0(T) is observed in contrast to scaling behavior for systems with short-range disorder. The finite T -> 0 width of QHE transitions may be due to an effective low temperature screening of smooth random potential owing to Coulomb repulsion of electrons.
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Submitted 13 November, 2001;
originally announced November 2001.
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Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Authors:
Yu. G. Arapov,
O. A. Kuznetsov,
V. N. Neverov,
G. I. Harus,
N. G. Shelushinina,
M. V. Yakunin
Abstract:
Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density o…
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Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.
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Submitted 15 May, 2001;
originally announced May 2001.
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Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
V. N. Neverov,
O. A. Kuznetsov
Abstract:
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the quasi-two-dimensional hole gas. In the QWs of intermediate widths and hole densities, this negative magnetoresistance may be explained as being caused by suppression of…
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A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the quasi-two-dimensional hole gas. In the QWs of intermediate widths and hole densities, this negative magnetoresistance may be explained as being caused by suppression of the intersubband scattering due to the upper subband depopulation. For the widest QWs with the highest hole densities, in which the hole gas is divided into two sublayers, similar negative magnetoresistance was observed and tentatively interpreted as also been due to suppression of the intersubband scattering, but subbands are the lowest symmetric and antisymmetric states of the double quantum well structure. These subbands shift under the in-plane magnetic field not vertically in energy, but horizontally along the wave vector.
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Submitted 16 March, 2001;
originally announced March 2001.
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Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov
Abstract:
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of th…
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We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of the inter-Landau-level (LL) gaps deduced from the activated magnetotransport etc] to the quantum well (QW) characteristics has been revealed in the cases when the Fermi level reaches the second confinement subband. The background density of states (5-10)x10^{14} m^{-2}meV^{-1} deduced from the activation behavior of the magnetoresistance is too high to be attributed to the LL tails, but may be accounted for within a smooth random potential model. The hole gas in the Ge QW has been found to separate into two sublayers for d_w > ~35 nm and p_s = ~5x10^{15} m^{-2}. A dramatic indication to this separation is the disappearance of the quantum Hall (QH) plateau for the filling factor nu = 1 as calculated for the whole Ge layer. Concomitantly a positive magnetoresistance emerges in the weakest fields, from which about a factor of two different mobilities in the sublayers have been deduced. A model is suggested to explain the existence of the QH plateaux close to the fundamental values in a system of two parallel layers with different mobilities. A comparison of the simulated structure of the QH magnetoresistivity with the experimental one indicates that the hole densities in the sublayers are not much different. Thus, the different mobilities are due to different quality of the normal and inverted interfaces of the Ge QW.
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Submitted 16 March, 2001;
originally announced March 2001.
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Unusually wide plateau of quantized Hall resistance in a quasi bilayer hole system inside the p-GeSi / Ge / p-GeSi quantum well
Authors:
M. V. Yakunin,
Yu. G. Arapov,
O. A. Kuznetsov,
V. N. Neverov
Abstract:
An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in one of two metastable states of the sample, for which a symmetric quasi-double-quantum-well system is formed inside the Ge layer, and corresponds to the filli…
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An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in one of two metastable states of the sample, for which a symmetric quasi-double-quantum-well system is formed inside the Ge layer, and corresponds to the filling factor nu = 1 for each of two sublayers in the Ge layer. The plateau exists not only within a magnetic field range related to the quantum-Hall liquid, but extends beyond it into a so-called quantized Hall insulator phase. For the other metastable state only a weak plateau is observed in the Hall resistivity, corresponding to nu = 1 per Ge layer as a whole. According to the existing theories, the extra wide plateau may be indicative of a kind of disorder in a conducting layer, characterized by a uniform distribution of puddles in their carrier density and by their small average size. We attribute the differences between these two states to the existence of two metastable modes in the self consistent potential profile that settle spontaneously in the multilayer system, which are characterized by different distributions of holes in the quantum well cross-section.
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Submitted 17 March, 1999;
originally announced March 1999.
