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Showing 1–23 of 23 results for author: Neverov, V N

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  1. arXiv:2502.17127  [pdf

    cond-mat.supr-con

    Josephson vortex system in a flux-flow regime in electron doped high-Tc superconductor Nd(2-x)CexCuO4

    Authors: T. B. Charikova, A. M. Bartashevich, V. N. Neverov, M. R. Popov, N. G. Shelushinina, A. A. Ivanov

    Abstract: For an epitaxial film of an electron-doped superconductor Nd(2-x)CexCuO4 (x=0.145), in a mixed state, a well-defined step structure is observed on the dependence of the c-axis flux-flow resistance on the magnetic field parralel to CuO2 layers. It is shown that in the region of a free flow of Josephson vortices, the structure is periodic with a period of deltaB~Phi0/(lambdaablambdac). It is essenti… ▽ More

    Submitted 24 February, 2025; originally announced February 2025.

    Comments: 26 pages, 11 figures, 1 table

  2. arXiv:2410.00488  [pdf

    cond-mat.supr-con

    Intrinsic Josephson junction characteristics of Nd2-xCexCuO4/SrTiO3 epitaxial films

    Authors: T. B. Charikova, D. I. Devyaterikov, V. N. Neverov, M. R. Popov, N. G. Shelushinina, A. A. Ivanov

    Abstract: The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4 /SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established that the I-V characteristics exhibit several resistive branches, which correspond to the resistive states of individual Josephson junctions. The results confirm the idea of a tunneling mechanism between the CuO2 layers (su… ▽ More

    Submitted 1 October, 2024; originally announced October 2024.

    Comments: 20 pages, 6 figures, 2 tables

  3. arXiv:2307.08676  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

    Magnetotransport in Weyl semimetal WTe2 single crystal

    Authors: A. N. Perevalova, B. M. Fominykh, V. V. Chistyakov, S. V. Naumov, V. N. Neverov, V. V. Marchenkov

    Abstract: A WTe2 single crystal was grown by the chemical vapor transport method, and its electrical resistivity and galvanomagnetic properties were investigated. Single-band and two-band models were used to estimate the concentration and mobility of charge carriers in WTe2 at temperatures from 4.2 to 150 K.

    Submitted 30 June, 2023; originally announced July 2023.

    Comments: 8 pages, 3 figures

  4. arXiv:2005.04569  [pdf

    cond-mat.mtrl-sci

    Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites

    Authors: A. G. Gamzatov, A. B. Batdalov, A. M. Aliev, P. D. H. Yen, S. V. Gudina, V. N. Neverov, T. D. Thanh, N. T. Dung, S. -C. Yu, D-H. Kim, M. H. Phan

    Abstract: We present the results of a comparative analysis of the magnetocaloric effect (MCE) in Pr0.7Sr0.2Ca0.1MnO3, through direct and indirect measurements, using experimentally measured magnetization, specific heat, magnetostriction, resistivity, thermal diffusivity and thermal conductivity parameters. We have demonstrated that the change in each parameter in response to a magnetic field near the ferrom… ▽ More

    Submitted 10 May, 2020; originally announced May 2020.

  5. Unconventional Reentrant Quantum Hall Effect in a HgTe/CdHgTe Double Quantum Well

    Authors: M. V. Yakunin, S. S. Krishtopenko, S. M. Podgornykh, M. R. Popov, V. N. Neverov, B. Jouault, W. Desrat, F. Teppe, S. A. Dvoretsky, N. N. Mikhailov

    Abstract: We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant function of magnetic field between two $i=2$ states (plateaus at $ρ_{xy}=h/ie^2$) separated by an intermediate $i=1$ state, which looks like some anomalous peak on t… ▽ More

    Submitted 16 November, 2018; originally announced November 2018.

    Comments: 7 pages, 5 figures

    Journal ref: Phys. Rev. B 102, 165305 (2020)

  6. arXiv:1808.08727  [pdf

    cond-mat.mes-hall cond-mat.quant-gas

    Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime

    Authors: S. V. Gudina, Yu. G. Arapov, V. N. Neverov, A. P. Savelyev, S. M. Podgonykh, N. G. Shelushinina, M. V. Yakunin

    Abstract: We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature… ▽ More

    Submitted 27 August, 2018; originally announced August 2018.

  7. arXiv:1807.01944  [pdf

    cond-mat.mtrl-sci

    Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations

    Authors: S. B. Bobin, A. T. Lonchakov, V. V. Deryushkin, V. N. Neverov

    Abstract: In this paper, the authors report the results of an experimental study of effective mass, electron mobility and phase shift of Shubnikov de Haas oscillations of transverse magnetoresistance in an extended electron concentration region from 8.8*10^15 cm^-3 to 4.3*10^18 cm^-3 in single crystals of mercury selenide. The revealed features confirm the existence of a Weyl semimetal phase in HgSe at low… ▽ More

    Submitted 10 January, 2019; v1 submitted 5 July, 2018; originally announced July 2018.

    Comments: 12 pages, 5 figures

  8. arXiv:1712.04776  [pdf, ps, other

    cond-mat.mes-hall

    Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

    Authors: S. V. Gudina, Yu. G. Arapov, V. N. Neverov, E. G. Novik, S. M. Podgornykh, M. R. Popov, E. V. Ilchenko, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

    Abstract: We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented i… ▽ More

    Submitted 15 December, 2017; v1 submitted 13 December, 2017; originally announced December 2017.

    Comments: 13 pages, 9 figures

  9. arXiv:1712.02134  [pdf

    cond-mat.mtrl-sci

    Novel magnetoresistance features in HgSe single crystal with low electron concentration

    Authors: A. T. Lonchakov, S. B. Bobin, V. V. Deryushkin, V. I. Okulov, T. E. Govorkova, V. N. Neverov

    Abstract: For the first time, magnetoresistive properties of the single crystal of HgSe with a low electron concentration were studied in wide range of temperature and magnetic field. Some fundamental parameters of spectrum and scattering of electrons were experimentally determined. Two important features of magnetic transport were found - strong transverse magnetoresistance (MR) and negative longitudinal M… ▽ More

    Submitted 6 December, 2017; originally announced December 2017.

    Comments: 11 pages, 5 figures

  10. arXiv:1409.0608  [pdf, ps, other

    cond-mat.supr-con

    Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, V. N. Neverov, D. S. Petukhov, O. E. Petukhova, A. A. Ivanov

    Abstract: We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the c… ▽ More

    Submitted 2 September, 2014; originally announced September 2014.

    Comments: 9 pages, 2 figures

  11. Upper critical field in electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$: two-gap model

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, D. S. Petukhov, V. N. Neverov, A. A. Ivanov

    Abstract: We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.

    Submitted 26 December, 2012; originally announced December 2012.

    Comments: 17 pages, 5 figures, 2 tables

  12. Doping effect on the anomalous behavior of the Hall effect in electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, D. S. Petukhov, A. V. Korolev, V. N. Neverov, A. A. Ivanov

    Abstract: Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with… ▽ More

    Submitted 29 September, 2011; originally announced September 2011.

    Comments: 14 pages, 5 figures

  13. arXiv:1010.0082  [pdf

    cond-mat.supr-con

    Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, V. N. Neverov, D. S. Petukhov, O. E. Sochinskaya, A. A. Ivanov

    Abstract: Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of… ▽ More

    Submitted 1 October, 2010; originally announced October 2010.

    Comments: 8 pages, 4 figures, 2 tables

  14. arXiv:cond-mat/0512678  [pdf, ps, other

    cond-mat.mes-hall cond-mat.dis-nn

    Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition

    Authors: Yu. G. Arapov, S. V. Gudina, G. I. Harus, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, S. M. Podgornyh, E. A. Uskova, B. N. Zvonkov

    Abstract: The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0… ▽ More

    Submitted 28 December, 2005; originally announced December 2005.

    Comments: Accepted for publication in International Journal of Nanoscience

  15. arXiv:cond-mat/0404355  [pdf

    cond-mat.mes-hall

    Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well

    Authors: Yu. G. Arapov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin, O. A. Kuznetsov, A. de Visser, L. Ponomarenko

    Abstract: For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) be… ▽ More

    Submitted 15 April, 2004; originally announced April 2004.

  16. Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes

    Authors: M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov, G. I. Harus, V. N. Neverov, N. G. Shelushinina, O. A. Kuznetsov, B. N. Zvonkov, E. A. Uskova, L. Ponomarenko, A. de Visser

    Abstract: In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect… ▽ More

    Submitted 6 June, 2003; originally announced June 2003.

    Comments: To be presented at EP2DS-15, Nara, Japan, June 2003

    Journal ref: Physica E, v.22 (1-3), pp.68-71 (2004).

  17. arXiv:cond-mat/0212612  [pdf

    cond-mat.mes-hall cond-mat.str-el

    Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures

    Authors: Yu. G. Arapov, G. I. Harus, V. N. Neverov, A. T. Lonchakov, N. G. Shelushinina, M. V. Yakunin

    Abstract: We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samp… ▽ More

    Submitted 27 December, 2002; originally announced December 2002.

  18. arXiv:cond-mat/0203435  [pdf

    cond-mat.dis-nn cond-mat.mes-hall

    Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures

    Authors: Yu. G. Arapov, G. I. Harus, O. A. Kuznetsov, V. N. Neverov, N. G. Shelushinina

    Abstract: Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attr… ▽ More

    Submitted 21 March, 2002; originally announced March 2002.

    Comments: 3 pages, 4 figures

    Journal ref: Semiconductors 33, No 9 (September 1999) 978-980

  19. The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

    Authors: Yu. G. Arapov, G. A. Alshanskii, G. I. Harus, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, O. A. Kuznetsov

    Abstract: We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside t… ▽ More

    Submitted 13 November, 2001; originally announced November 2001.

    Comments: Accepted for publication in Nanotechnology

    Journal ref: Nanotechnology 13 (2002) 86-93

  20. arXiv:cond-mat/0105285  [pdf

    cond-mat.mes-hall

    Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

    Authors: Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin

    Abstract: Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density o… ▽ More

    Submitted 15 May, 2001; originally announced May 2001.

    Comments: to be presented at the 9-th International Symposium "Nanostructures-2001", St.Petersburg, Russia, June 2001

  21. arXiv:cond-mat/0103348  [pdf

    cond-mat.mes-hall

    Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well

    Authors: M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov, V. N. Neverov, O. A. Kuznetsov

    Abstract: A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the quasi-two-dimensional hole gas. In the QWs of intermediate widths and hole densities, this negative magnetoresistance may be explained as being caused by suppression of… ▽ More

    Submitted 16 March, 2001; originally announced March 2001.

    Comments: pdf, 4 pages, 4 figures, submitted to the 9th Internat. Symposium "Nanotechnology-2001", S.Petersburg, Russia, June 2001

  22. Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect

    Authors: M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov, G. I. Harus, V. N. Neverov, N. G. Shelushinina, O. A. Kuznetsov

    Abstract: We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of th… ▽ More

    Submitted 16 March, 2001; originally announced March 2001.

    Comments: pdf, 9 pages, 12 figures (included)

    Journal ref: Nanotechnology 11 (2000) 351-358

  23. arXiv:cond-mat/9903265  other

    cond-mat.mes-hall

    Unusually wide plateau of quantized Hall resistance in a quasi bilayer hole system inside the p-GeSi / Ge / p-GeSi quantum well

    Authors: M. V. Yakunin, Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov

    Abstract: An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in one of two metastable states of the sample, for which a symmetric quasi-double-quantum-well system is formed inside the Ge layer, and corresponds to the filli… ▽ More

    Submitted 17 March, 1999; originally announced March 1999.

    Journal ref: JETP Lett. 70, 301 (1999)