Showing 1–50 of 142 results for author: Neupane, M

Complex electronic topography and magnetotransport in an in-plane ferromagnetic kagome metal

Authors: Anup Pradhan Sakhya, Richa Pokharel Madhogaria, Barun Ghosh, Nabil Atlam, Milo Sprague, Mazharul Islam Mondal, Himanshu Sheokand, Arun K. Kumay, Shirin Mozaffari, Rui Xue, Yong P. Chen, David G. Mandrus, Arun Bansil, Madhab Neupane

Abstract: The intricate interplay between flat bands, Dirac cones, and magnetism in kagome materials has recently attracted significant attention from materials scientists, particularly in compounds belonging to the RMn6Sn6 family (R = Sc, Y, rare earths), due to their inherent magnetic frustration. Here, we present a detailed investigation of the ferromagnetic (FM) kagome magnet ScMn6(Sn0.78Ga0.22)6 using… ▽ More The intricate interplay between flat bands, Dirac cones, and magnetism in kagome materials has recently attracted significant attention from materials scientists, particularly in compounds belonging to the RMn6Sn6 family (R = Sc, Y, rare earths), due to their inherent magnetic frustration. Here, we present a detailed investigation of the ferromagnetic (FM) kagome magnet ScMn6(Sn0.78Ga0.22)6 using angle-resolved photoemission spectroscopy (ARPES), magnetotransport measurements, and density functional theory (DFT) calculations. Our findings reveal a paramagnetic-to-FM transition at 375 K, with the in-plane direction serving as the easy magnetization axis. Notably, ARPES measurements reveal a Dirac cone near the Fermi energy, while the Hall resistivity exhibits a substantial contribution from the anomalous Hall effect. Additionally, we observe a flat band spanning a substantial portion of the Brillouin zone, arising from the destructive interference of wave functions in the Mn kagome lattice. Theoretical calculations reveal that the gap in the Dirac cone can be modulated by altering the orientation of the magnetic moment. An out-of-plane orientation produces a gap of approximately 15 meV, while an in-plane alignment leads to a gapless state, as corroborated by ARPES measurements. This comprehensive analysis provides valuable insights into the electronic structure of magnetic kagome materials and paves the way for exploring novel topological phases in this material class. △ Less

Submitted 14 May, 2025; originally announced May 2025.

Comments: 7 pages, 4 figures

Electronic structure of a layered altermagnetic compound CoNb4Se8

Authors: Anup Pradhan Sakhya, Mazharul Islam Mondal, Milo Sprague, Resham Babu Regmi, Arun K Kumay, Himanshu Sheokand, Igor. I. Mazin, Nirmal J. Ghimire, Madhab Neupane

Abstract: Recently, there has been a growing interest in altermagnetism, a novel form of magnetism, characterized by unique spin-splitting even in the absence of both net magnetic moments and spin-orbit coupling. Despite numerous theoretical predictions, experimental evidence of such spin-splitting in real materials remains limited. In this study, we use angle-resolved photoemission spectroscopy (ARPES) com… ▽ More Recently, there has been a growing interest in altermagnetism, a novel form of magnetism, characterized by unique spin-splitting even in the absence of both net magnetic moments and spin-orbit coupling. Despite numerous theoretical predictions, experimental evidence of such spin-splitting in real materials remains limited. In this study, we use angle-resolved photoemission spectroscopy (ARPES) combined with density functional theory (DFT) calculations to investigate the electronic band structure of the altermagnet candidate CoNb4Se8. This material features an ordered sublattice of intercalated Co atoms within NbSe2 layers. Magnetization and electrical resistivity measurements reveal the onset of antiferromagnetism below 168 K. Temperature dependent ARPES data, supported by DFT calculations, uncover spin split bands along the MGM high-symmetry direction. The observation of spin splitting in this high temperature altermagnet opens new avenues for exploring its electronic properties and potential applications in spintronic technologies. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Comments: 7 pages, 4 figures

Low-lying Electronic Structure of Rare-Earth Based Topological Nodal Line Semimetal Candidate DySbTe

Authors: Nathan Valadez, Iftakhar Bin Elius, Dante James, Peter Radanovich, Tetiana Romanova, Sami Elgalal, Grzegorz Chajewski, Florie Mesple, Ellis Thompson, Keng Tou Chu, Matthew Yankowitz, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: Lanthanide (Ln) based LnSbTe materials have garnered significant attention due to rich interplay of long range magnetic ordering and topological properties, driven by unique crystalline symmetry, 4f electron interactions, and pronounced spin-orbit coupling (SOC) effects. DySbTe, as a heavier lanthanide-based member of the LnSbTe family, stands out with its SOC and larger on site interactions on it… ▽ More Lanthanide (Ln) based LnSbTe materials have garnered significant attention due to rich interplay of long range magnetic ordering and topological properties, driven by unique crystalline symmetry, 4f electron interactions, and pronounced spin-orbit coupling (SOC) effects. DySbTe, as a heavier lanthanide-based member of the LnSbTe family, stands out with its SOC and larger on site interactions on its 4f electrons, which arise due to the heavier Dy element. Here, we present a comprehensive study on the low-temperature bulk physical properties and the electronic structure of DySbTe using magnetic susceptibility, heat capacity, and electrical resistivity measurements, along with high-resolution angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and spectroscopy (STM/S), and density functional theory calculations. Our thermodynamic measurements revealed an antiferromagnetic ordering below TN = 7.45 K and a subsequent magnetic phase transition at TN1 = 7.15 K. Our transport studies indicate a semimetallic behavior with unusual feature in the ordered state. Our ARPES measurements revealed a diamond-shaped Fermi pocket centered at the G point, with band features that evolve distinctly across various binding energies. STM/S results indicate a minimum in the density of states at around 100 meV below the Fermi level, and ARPES measurements reveal a significant gap present around the X point, differentiating DySbTe from other LnSbTe compounds. These findings enhance our understanding of the SOC effects on the electronic structure and topological properties in the LnSbTe family, highlighting DySbTe as a promising candidate for exploring the interplay between topology and magnetism. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Comments: 9 pages, 5 figures

Diverse electronic topography in a distorted kagome metal LaTi3Bi4

Authors: Anup Pradhan Sakhya, Brenden R. Ortiz, Barun Ghosh, Milo Sprague, Mazharul Islam Mondal, Matthew Matzelle, Nabil Atlam, Arun K Kumay, David G. Mandrus, Jonathan D. Denlinger, Arun Bansil, Madhab Neupane

Abstract: Recent reports on a family of kagome metals of the form LnTi3Bi4 (Ln = Lanthanide) has stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities. In this manuscript, we use angle resolved photoemission spectroscopy measurements in combination wi… ▽ More Recent reports on a family of kagome metals of the form LnTi3Bi4 (Ln = Lanthanide) has stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities. In this manuscript, we use angle resolved photoemission spectroscopy measurements in combination with density functional theory calculations to investigate the electronic structure of a newly discovered kagome metal LaTi3Bi4. Our results reveal multiple van Hove singularities (VHSs) with one VHS located in the vicinity of the Fermi level. We clearly observe two flat bands, which originate from the destructive interference of wave functions within the Ti kagome motif. These flat bands and VHSs originate from Ti d orbitals and are very responsive to the polarization of the incident beam. We notice a significant anisotropy in the electronic structure, resulting from the breaking of six fold rotational symmetry in this material. Our findings demonstrate this new family of Ti based kagome material as a promising platform to explore novel emerging phenomena in the wider LnTi3Bi4 (Ln= lanthanide) family of materials. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Comments: 7 pages, 3 figures

Spin density wave and van Hove singularity in the kagome metal CeTi3Bi4

Authors: Pyeongjae Park, Brenden R. Ortiz, Milo Sprague, Anup Pradhan Sakhya, Si Athena Chen, Matthias. D. Frontzek, Wei Tian, Romain Sibille, Daniel G. Mazzone, Chihiro Tabata, Koji Kaneko, Lisa M. DeBeer-Schmitt, Matthew B. Stone, David S. Parker, German D. Samolyuk, Hu Miao, Madhab Neupane, Andrew D. Christianson

Abstract: Kagome metals with van Hove singularities near the Fermi level can host intriguing quantum phenomena such as chiral loop currents, electronic nematicity, and unconventional superconductivity. However, to our best knowledge, unconventional magnetic states driven by van Hove singularities--like spin-density waves--have not been observed experimentally in kagome metals. Here, we report the magnetic a… ▽ More Kagome metals with van Hove singularities near the Fermi level can host intriguing quantum phenomena such as chiral loop currents, electronic nematicity, and unconventional superconductivity. However, to our best knowledge, unconventional magnetic states driven by van Hove singularities--like spin-density waves--have not been observed experimentally in kagome metals. Here, we report the magnetic and electronic structure of the layered kagome metal CeTi3Bi4, where Ti kagome electronic structure interacts with a magnetic sublattice of Ce3+ Jeff = 1/2 moments. Neutron diffraction reveals an incommensurate spin-density wave ground state of the Ce3+ moments, coexisting with commensurate antiferromagnetic order across most of the temperature-field phase diagram. The commensurate component is preferentially suppressed by thermal fluctuations and magnetic field, yielding a rich phase diagram involving an intermediate single-Q spin-density wave phase. First-principles calculations and angle-resolved photoemission spectroscopy identify van Hove singularities near the Fermi level, with the observed magnetic propagation vectors connecting their high density of states, strongly suggesting a van Hove singularity-assisted spin-density wave. These findings establish kagome metals LnTi3Bi4 as a model platform where the characteristic electronic structure of the kagome lattice plays a pivotal role in magnetic order. △ Less

Submitted 12 May, 2025; v1 submitted 13 December, 2024; originally announced December 2024.

Comments: 21 pages, 4 figures, SI not included

Journal ref: Nature Communications 16, 4384 (2025)

Observation of paramagnetic spin-degeneracy lifting in EuZn2Sb2

Authors: Milo X. Sprague, Sabin Regmi, Barun Ghosh, Anup Pradhan Sakhya, Mazharul Islam Mondal, Iftakhar Bin Elius, Nathan Valadez, Bahadur Singh, Tetiana Romanova, Dariusz Kaczorowski, Arun Bansil, Madhab Neupane

Abstract: Taken together, time-reversal and spatial inversion symmetries impose a two-fold spin degeneracy of the electronic states in crystals. In centrosymmetric materials, this degeneracy can be lifted by introducing magnetism, either via an externally applied field or through internal magnetization. However, a correlated alignment of spins, even in the paramagnetic phase, can lift the spin degeneracy of… ▽ More Taken together, time-reversal and spatial inversion symmetries impose a two-fold spin degeneracy of the electronic states in crystals. In centrosymmetric materials, this degeneracy can be lifted by introducing magnetism, either via an externally applied field or through internal magnetization. However, a correlated alignment of spins, even in the paramagnetic phase, can lift the spin degeneracy of electronic states. Here, we report an in-depth study of the electronic band structure of the Eu-ternary pnictide EuZn2Sb2 through a combination of high-resolution angle-resolved photoemission spectroscopy measurements and first principles calculations. An analysis of the photoemission lineshapes over a range of incident photon energies and sample temperatures is shown to reveal the presence of band spin degeneracy-lifting in the paramagnetic phase. Our ARPES results are in good agreement with theoretical ferromagnetic-phase calculations, which indicates the importance of ferromagnetic fluctuations in the system. Through our calculations, we predict that spin-polarized bands in EuZn2Sb2 generate a single pair of Weyl nodes. Our observation of band-splitting in EuZn2Sb2 provides a key step toward realizing time-reversal symmetry breaking physics in the absence of long-range magnetic order. △ Less

Submitted 19 July, 2024; originally announced July 2024.

Comments: 13 pages, 7 figures

Journal ref: Phys. Rev. B 110, 045130 (2024)

Electronic structure of a nodal line semimetal candidate TbSbTe

Authors: Iftakhar Bin Elius, Jacob F Casey, Sabin Regmi, Volodymyr Buturlim, Anup Pradhan Sakhya, Milo Sprague, Mazharul Islam Mondal, Nathan Valadez, Arun K Kumay, Justin Scrivens, Yenugonda Venkateswara, Shovan Dan, Tetiana Romanova, Arjun K Pathak, Krzysztof Gofryk, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: The LnSbTe (Ln = Lanthanides) family, like isostructural ZrSiS type compounds, has emerged as a fertile playground for exploring the interaction of electronic correlations and magnetic ordering with the nodal line band topology. Here, we report a detailed electronic band structure investigation of TbSbTe, corroborated by electrical transport, thermodynamic, and magnetic studies. Temperature-depend… ▽ More The LnSbTe (Ln = Lanthanides) family, like isostructural ZrSiS type compounds, has emerged as a fertile playground for exploring the interaction of electronic correlations and magnetic ordering with the nodal line band topology. Here, we report a detailed electronic band structure investigation of TbSbTe, corroborated by electrical transport, thermodynamic, and magnetic studies. Temperature-dependent magnetic susceptibility and thermodynamic transport studies indicate the onset of antiferromagnetic ordering below TN = 5.1 K. The electronic band structure study, carried out with high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements aided with density functional theory based first-principles calculations reveals presence of nodal lines in the GammaX high symmetry direction, forming a diamond-shaped nodal plane around Gamma high symmetry point. A strongly photon energy dependent nodal feature located at the X point of the surface Brillouin zone, indicating an extended nodal line along X R direction, is also observed. This study elucidates the intricate interplay among symmetry-protected band characteristics, the influence of spin orbit coupling, magnetism, and topological properties. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 21 pages, 4 figures

Thermal boundary conductance of metal diamond interfaces predicted by machine learning interatomic potentials

Authors: Khalid Zobaid Adnan, Mahesh R. Neupane, Tianli Feng

Abstract: Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC but is limited by the lack of reliable potential describing metal diamond interfaces. In this work, we report the development of machine learning interatomic po… ▽ More Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC but is limited by the lack of reliable potential describing metal diamond interfaces. In this work, we report the development of machine learning interatomic potentials and the prediction of TBCs of several technologically promising metal diamond interfaces using nonequilibrium molecular dynamics. The predicted TBCs of Al, Zr, Mo, and Au-diamond interfaces are approximately 316, 88, 52, and 55 MW/m2K, respectively, after quantum corrections. The corresponding thermal boundary resistances are equivalent to 0.8 μm thick of Al, 1.4 μm Mo, 0.3 μm Zr, and 5.3 μm Au, respectively. We also find that the conventional simple models, such as the acoustic mismatch model and diffuse mismatch model, even including the full-band phonon dispersion from first principles, largely misestimate the TBC values because of their inability to include inelastic transmission as well as interfacial structural and bonding details. The quantum-corrected TBC values for the metal diamond interfaces correlate well with the quantum corrected phonon specific heat of metals, instead of diamond. Additionally, our comparative analysis of Debye temperature and elastic modulus in these systems reveals that the former parameter correlates more strongly with the TBC than the latter. These low TBC values need to be considered in future diamond based semiconductor devices. △ Less

Submitted 22 May, 2024; v1 submitted 23 April, 2024; originally announced April 2024.

Comments: 20 pages, 6 figures

Evolution of Berry Phase and Half-Metallicity in Cr$_2$Te$_3$ in Response to Strain, Filling, Thickness, and Surface Termination

Authors: Sohee Kwon, Yuhang Liu, Hang Chi, Gen Yin, Mahesh R. Neupane, Roger K. Lake

Abstract: Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maxima… ▽ More Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maximally localized Wannier functions, we reveal the physical origins of the sensitivity of the sign of the AHC to strain and filling, and we determine the effect of surface termination on the half metallicity. We find that thin films terminated on the Te layers are the most energetically stable, but only the thin films terminated on both sides with the partially occupied Cr layers are half metals. In bulk Cr$_2$Te$_3$, the sensitivity of the sign of the AHC to strain and filling results from the complex Fermi surface comprised of three bands. Filling of local minima and bands near anti-crossings alters the local Berry curvature consistent with the negative to positive switching of the AHC. Similarly, strain depopulates a local minimum, shifts a degenerate point closer to the Fermi energy, and causes two spin-orbit split bands to reverse their order. These findings provide a physical understanding of the evolution of the Berry phase, AHC, and half-metallicity in Cr$_2$Te$_3$. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Comments: 14 pages, 11 figures

Observation of multiple van Hove singularities and correlated electronic states in a new topological ferromagnetic kagome metal NdTi3Bi4

Authors: Mazharul Islam Mondal, Anup Pradhan Sakhya, Milo Sprague, Brenden R. Ortiz, Matthew Matzelle, Barun Ghosh, Nathan Valadez, Iftakhar Bin Elius, Arun Bansil, Madhab Neupane

Abstract: Kagome materials have attracted enormous research interest recently owing to its diverse topological phases and manifestation of electronic correlation due to its inherent geometric frustration. Here, we report the electronic structure of a new distorted kagome metal NdTi3Bi4 using a combination of angle resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) c… ▽ More Kagome materials have attracted enormous research interest recently owing to its diverse topological phases and manifestation of electronic correlation due to its inherent geometric frustration. Here, we report the electronic structure of a new distorted kagome metal NdTi3Bi4 using a combination of angle resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. We discover the presence of two at bands which are found to originate from the kagome structure formed by Ti atoms with major contribution from Ti dxy and Ti dx2-y2 orbitals. We also observed multiple van Hove singularities (VHSs) in its electronic structure, with one VHS lying near the Fermi level EF. In addition, the presence of a surface Dirac cone at the G point and a linear Dirac-like state at the K point with its Dirac node lying very close to the EF indicates its topological nature. Our findings reveal NdTi3Bi4 as a potential material to understand the interplay of topology, magnetism, and electron correlation. △ Less

Submitted 19 November, 2023; originally announced November 2023.

Comments: 7 pages, 4 figures

Electronic structure in a transition metal dipnictide TaAs2

Authors: Sabin Regmi, Cheng-Yi Huang, Mojammel A. Khan, Baokai Wang, Anup Pradhan Sakhya, M. Mofazzel Hosen, Jesse Thompson, Bahadur Singh, Jonathan D. Denlinger, Masahiro Ishigami, J. F. Mitchell, Dariusz Kaczorowski, Arun Bansil, Madhab Neupane

Abstract: The family of transition metal dipnictides (TMDs) has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently, TaAs2, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high resolution. Angle resolved photoemission spectroscopy (ARPES), we reveal bo… ▽ More The family of transition metal dipnictides (TMDs) has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently, TaAs2, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high resolution. Angle resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface and linearly dispersive bands on the (201) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations show that the linearly dispersive bands on the measured surface of TaAs2 are trivial bulk bands. The absence of symmetry-protected surface state on the (201) surface indicates its topologically dark nature. The presence of open Fermi surface features suggests that the open orbit fermiology could contribute to the extremely large MR of TaAs. △ Less

Submitted 15 November, 2023; originally announced November 2023.

Comments: 13 pages, 5 figures

Journal ref: J. Phys.: Condens. Matter 36, 075502 (2023)

Complex Fermiology and Electronic Structure of Antiferromagnet EuSnP

Authors: Milo Sprague, Anup Pradhan Sakhya, Sabin Regmi, Mazharul Islam Mondal, Iftakhar Bin Elius, Nathan Valadez, Kali Booth, Tetiana Romanova, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: We studied the electronic structure of a layered antiferromagnetic metal, EuSnP, in the paramagnetic and in the antiferromagnetic phase using angle resolved photoemission spectroscopy (ARPES) alongside density functional theory (DFT) based first principles calculations. The temperature dependence of the magnetic susceptibility measurements exhibits an antiferromagnetic transition at a Neel tempera… ▽ More We studied the electronic structure of a layered antiferromagnetic metal, EuSnP, in the paramagnetic and in the antiferromagnetic phase using angle resolved photoemission spectroscopy (ARPES) alongside density functional theory (DFT) based first principles calculations. The temperature dependence of the magnetic susceptibility measurements exhibits an antiferromagnetic transition at a Neel temperature of 21 K. Employing high resolution ARPES, the valence band structure was measured at several temperatures above and below the Neel temperature, which produced identical spectra independent of temperature. Through analysis of the ARPES results presented here, we attribute the temperature independent spectra to the weak coupling of the Sn, and P conduction electrons with Eu 4f states. △ Less

Submitted 5 November, 2023; originally announced November 2023.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Materials 8, 054411 ( 2024)

Electronic structure in a rare-earth based nodal-line semimetal candidate PrSbTe

Authors: Sabin Regmi, Iftakhar Bin Elius, Anup Pradhan Sakhya, Milo Sprague, Mazharul Islam Mondal, Nathan Valadez, Volodymyr Buturlim, Kali Booth, Tetiana Romanova, Krzysztof Gofryk, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: Nodal line semimetals feature topologically protected band crossings between the bulk valence and conduction bands that extend along a finite dimension in the form of a line or a loop. While ZrSiS and similar materials have attracted extensive research as hosts for the nodal line semimetallic phase, an alternative avenue has emerged in the form of isostructural rare-earth (RE) based RESbTe materia… ▽ More Nodal line semimetals feature topologically protected band crossings between the bulk valence and conduction bands that extend along a finite dimension in the form of a line or a loop. While ZrSiS and similar materials have attracted extensive research as hosts for the nodal line semimetallic phase, an alternative avenue has emerged in the form of isostructural rare-earth (RE) based RESbTe materials. Such systems possess intriguing potentialities for harboring elements of magnetic ordering and electronic correlations owing to the presence of 4f electrons intrinsic to the RE elements. In this study, we have carried out angle resolved photoemission spectroscopy (ARPES) and thermodynamic measurements in conjunction with first principles computations on PrSbTe to elucidate its electronic structure and topological characteristics. Magnetic and thermal characterizations indicate the presence of well-localized 4f states with the absence of any discernible phase transition down to 2 K. The ARPES results reveal the presence of gapless Dirac crossings that correspond to a nodal-line along the XR direction in the three-dimensional Brillouin zone. Furthermore, Dirac crossing that makes up nodal line, which forms a diamond-shaped nodal plane centered at the center of the Brillouin zone is also identified within the experimental resolution. This study on the electronic structure of PrSbTe contributes to the understanding of the pivotal role played by spin-orbit coupling in the context of the RESbTe family of materials △ Less

Submitted 1 May, 2024; v1 submitted 3 October, 2023; originally announced October 2023.

Comments: 26 pages, 11 figures; SUPPLEMENTAL MATERIAL included

Journal ref: Phys. Rev. Materials 8, L041201 (2024)

Observation of flat and weakly dispersing bands in a van der Waals semiconductor Nb3Br8 with breathing kagome lattice

Authors: Sabin Regmi, Anup Pradhan Sakhya, Tharindu Fernando, Yuzhou Zhao, Dylan Jeff, Milo Sprague, Favian Gonzalez, Iftakhar Bin Elius, Mazharul Islam Mondal, Nathan Valadez, Damani Jarrett, Alexis Agosto, Jihui Yang, Jiun-Haw Chu, Saiful I. Khondaker, Xiaodong Xu, Ting Cao, Madhab Neupane

Abstract: Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are… ▽ More Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are well explained by the theoretical calculations, which show they have Nb d character indicating their origination from the Nb atoms forming the breathing kagome plane. This van der Waals material can be easily thinned down via mechanical exfoliation to the ultrathin limit and such ultrathin samples are stable as depicted from the time-dependent Raman spectroscopy measurements at room temperature. These results demonstrate that Nb3Br8 is an excellent material not only for studying breathing kagome induced flat band physics and its connection with magnetism, but also for heterostructure fabrication for application purposes. △ Less

Submitted 9 September, 2023; originally announced September 2023.

Comments: 24 pages, 12 figures, Supplemental Material included

Journal ref: Phys. Rev. B 108, L121404 (2023)

Observation of multiple flat bands and topological Dirac states in a new titanium based slightly distorted kagome metal YbTi3Bi4

Authors: Anup Pradhan Sakhya, Brenden R. Ortiz, Barun Ghosh, Milo Sprague, Mazharul Islam Mondal, Matthew Matzelle, Iftakhar Bin Elius, Nathan Valadez, David G. Mandrus, Arun Bansil, Madhab Neupane

Abstract: Kagome lattices have emerged as an ideal platform for exploring various exotic quantum phenomena such as correlated topological phases, frustrated lattice geometry, unconventional charge density wave orders, Chern quantum phases, superconductivity, etc. In particular, the vanadium based nonmagnetic kagome metals AV3Sb5 (A= K, Rb, and Cs) have seen a flurry of research interest due to the discovery… ▽ More Kagome lattices have emerged as an ideal platform for exploring various exotic quantum phenomena such as correlated topological phases, frustrated lattice geometry, unconventional charge density wave orders, Chern quantum phases, superconductivity, etc. In particular, the vanadium based nonmagnetic kagome metals AV3Sb5 (A= K, Rb, and Cs) have seen a flurry of research interest due to the discovery of multiple competing orders. Here, we report the discovery of a new Ti based kagome metal YbTi3Bi4 and employ angle-resolved photoemission spectroscopy (ARPES), magnetotransport in combination with density functional theory calculations to investigate its electronic structure. We reveal spectroscopic evidence of multiple flat bands arising from the kagome lattice of Ti with predominant Ti 3d character. Through our calculations of the Z2 indices, we have identified that the system exhibits topological nontriviality with surface Dirac cones at the Gamma point and a quasi two-dimensional Dirac state at the K point which is further confirmed by our ARPES measured band dispersion. These results establish YbTi3Bi4 as a novel platform for exploring the intersection of nontrivial topology, and electron correlation effects in this newly discovered Ti based kagome lattice. △ Less

Submitted 3 September, 2023; originally announced September 2023.

Comments: 8 pages, 5 figures

Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8

Authors: Dylan A. Jeff, Favian Gonzalez, Kamal Harrison, Yuzhou Zhao, Tharindu Fernando, Sabin Regmi, Zhaoyu Liu, Humberto R. Gutierrez, Madhab Neupane, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Saiful I. Khondaker

Abstract: Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is… ▽ More Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb3Cl8 in bulk and few layer flakes using polarized Raman spectroscopy and density functional theory (DFT) analysis to determine the material's vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, 5 of which are A1g modes while the remaining 7 are Eg modes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and FWHM are affected. Raman measurements as a function of excitation wavelength (473-785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperature P3m1 phase to the low-temperature R3m phase. Magneto-Raman measurements carried out at 140 and 2 K between -2 to 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb3Cl8 material which can be further exploited for future applications. △ Less

Submitted 25 October, 2023; v1 submitted 20 June, 2023; originally announced June 2023.

Comments: 18 pages, 8 figures, 1 table

Journal ref: 2D Mater. 10 045030 (2023)

Observation of momentum-dependent charge density wave gap in a layered antiferromagnet GdTe3

Authors: Sabin Regmi, Iftakhar Bin Elius, Anup Pradhan Sakhya, Dylan Jeff, Milo Sprague, Mazharul Islam Mondal, Damani Jarrett, Nathan Valadez, Alexis Agosto, Tetiana Romanova, Jiun-Haw Chu, Saiful I. Khondaker, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the inter… ▽ More Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material GdTe3, which is antiferromagnetic below 12 K, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our Raman spectroscopy measurements show the presence of CDW amplitude mode at room temperature, which remains prominent when the sample is thinned down to 4-layers by exfoliation. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along G-Z and gradually decreases going towards G - M. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three-dimensions. △ Less

Submitted 1 November, 2023; v1 submitted 7 June, 2023; originally announced June 2023.

Comments: 30 pages, 12 figures, Supplementary Information included

Journal ref: Scientific Reports volume 13, Article number: 18618 (2023)

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Authors: Abhijit Biswas, Gustavo A. Alvarez, Tao Li, Joyce Christiansen-Salameh, Eugene Jeong, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Tia Gray, Xiang Zhang, Tymofii S. Pieshkov, Harikishan Kannan, Jacob Elkins, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Elias J. Garratt, Bradford B. Pate, Tony G. Ivanov, Yuji Zhao, Zhiting Tian, Pulickel M. Ajayan

Abstract: Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition a… ▽ More Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures. △ Less

Submitted 20 September, 2023; v1 submitted 22 May, 2023; originally announced May 2023.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. Materials 7, 094602 (2023)

Structural, electronic, and magnetic properties of CrTe2

Authors: Yuhang Liu, Sohee Kwon, George J. de Coster, Roger K. Lake, Mahesh R. Neupane

Abstract: Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H, 2H) calculated from density functional theory (DFT) show that the 1T phase is the ground state, and the energetic transition barriers between the phases, calcula… ▽ More Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H, 2H) calculated from density functional theory (DFT) show that the 1T phase is the ground state, and the energetic transition barriers between the phases, calculated by the nudged elastic band method, are large, on the order of 0.5 eV. The self-consistent Hubbard $U$ correction parameters are calculated for all the phases of CrTe$_2$. The calculated magnetic moment of 1T-CrTe$_2$ with $\geq 2$ layers lies in the plane, whereas the magnetic moment of a monolayer is out-of-plane. Band filling and tensile bi-axial strain cause the magnetic moment of a monolayer to switch from out-of-plane to in-plane, and compressive bi-axial strain in a bilayer causes the magnetic moment to switch from in-plane to out-of-plane. The magnetic anisotropy is shown to originate from the large spin orbit coupling (SOC) of the Te atoms and the anisotropy of the exchange coupling constants $J_{xy}$ and $J_z$ in an XXZ type Hamiltonian. Renormalized spin wave theory using experimental values for the magnetic anisotropy energy and Curie temperatures provides a range of values for the nearest neighbor exchange coupling. △ Less

Submitted 29 April, 2023; originally announced May 2023.

Journal ref: Physical Review MATERIALS 6, 084004 (2022)

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Authors: Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang, Joyce Christiansen-Salameh, Anand B. Puthirath, Kory Burns, Jordan A. Hachtel, Tao Li, Sathvik Ajay Iyengar, Tia Gray, Chenxi Li, Xiang Zhang, Harikishan Kannan, Jacob Elkins, Tymofii S. Pieshkov, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Elias J. Garratt, Tony Ivanov, Bradford B. Pate, Yuji Zhao, Hanyu Zhu, Zhiting Tian , et al. (2 additional authors not shown)

Abstract: Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and s… ▽ More Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. Our work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology. △ Less

Submitted 4 November, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

Comments: 33 pages, 4 figures

Journal ref: Adv. Mater. 2023, 2304624

Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites

Authors: Abhijit Biswas, Rui Xu, Joyce Christiansen-Salameh, Eugene Jeong, Gustavo A. Alvarez, Chenxi Li, Anand B. Puthirath, Bin Gao, Arushi Garg, Tia Gray, Harikishan Kannan, Xiang Zhang, Jacob Elkins, Tymofii S. Pieshkov, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Bradford B. Pate, Tony Ivanov, Elias J. Garratt, Pengcheng Dai, Hanyu Zhu, Zhiting Tian, Pulickel M. Ajayan

Abstract: Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show… ▽ More Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the co-existence of two phases can lead to strong non-linear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN grain sizes governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorphs based nanocomposites with desirable properties for optoelectronics and thermal energy management applications. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Comments: 29 pages, 5 figures

Journal ref: Nano Lett. 2023, 23, 15, 6927

Observation of flat bands and Dirac-like bands in a weakly correlated semimetal YRu2Si2

Authors: Anup Pradhan Sakhya, Sabin Regmi, Milo Sprague, Mazharul Islam Mondal, Iftakhar Bin Elius, Nathan Valadez, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: Condensed matter systems with flat bands have been the center of research interest in recent years as they provide a platform for the emergence of exotic many-body states, such as superconductivity, ferromagnetism, and the fractional quantum Hall effect. However, realization of materials possessing at bands near the Fermi level experimentally is very rare. Here, we report the experimental observat… ▽ More Condensed matter systems with flat bands have been the center of research interest in recent years as they provide a platform for the emergence of exotic many-body states, such as superconductivity, ferromagnetism, and the fractional quantum Hall effect. However, realization of materials possessing at bands near the Fermi level experimentally is very rare. Here, we report the experimental observation of flat bands in a weakly-correlated system YRu2Si2 employing angle-resolved photoemission spectroscopy (ARPES) which is supported by first-principles calculations. These flat bands originate from Ru d orbitals and are found to be sensitive to the polarization of light. In addition, ARPES data revealed surface and bulk Dirac-like bands. The observed ARPES data is in excellent agreement with the density functional theory results. The presence of both flat bands and Dirac-like bands in YRu2Si2 suggest a unique synergy of correlation and topology in this material belonging to the centrosymmetric tetragonal ThCr2Si2-type structure thus establishing a new platform to investigate flat band physics in combination with non-trivial topological states in a weakly correlated system. △ Less

Submitted 16 April, 2023; originally announced April 2023.

Comments: 9 pages, 5 figures

Structural tuning magnetism and topology in a magnetic topological insulator

Authors: Christopher Eckberg, Gang Qiu, Tao Qu, Sohee Kwon, Yuhang Liu, Lixuan Tai, David Graf, Su Kong Chong, Peng Zhang, Kin L. Wong, Roger K. Lake, Mahesh R. Neupane, Kang L. Wang

Abstract: To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polari… ▽ More To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polarized, dissipationless edge channels with a nonzero Chern number $\mathcal{C}$. The long-range ordering of the spatially separated magnetic ions is itself mediated by electronic states in the host TI, leading to a sophisticated feedback between magnetic and electronic properties. Here we present a study of the electronic and magnetic response of a BST-based QAHI system to structural tuning via hydrostatic pressure. We identify a systematic closure of the topological gap under compressive strain accompanied by a simultaneous enhancement in the magnetic ordering strength. Combining these experimental results with first-principle calculations we identify structural deformation as a strong tuning parameter to traverse a rich topological phase space and modify magnetism in the magnetically doped BST system. △ Less

Submitted 8 January, 2023; originally announced January 2023.

Comments: 15 pages, 5 figures

Weyl Metal Phase in Delafossite Oxide PtNiO$_2$

Authors: Gang Bahadur Acharya, Mohan Bikram Neupane, Rojila Ghimire, Madhav Prasad Ghimire

Abstract: On the basis of density functional theory calculations we predict Weyl points in rhombohedral structure of PtNiO$_2$ having symmorphic symmetry. From the formation energy and phonon calculations, PtNiO$_2$ is found to be structurally stable. The magnetic ground state is ferromagnetic with an effective magnetic moment of 1.01 $μ_B$ per unit cell. The electronic structure shows major contributions f… ▽ More On the basis of density functional theory calculations we predict Weyl points in rhombohedral structure of PtNiO$_2$ having symmorphic symmetry. From the formation energy and phonon calculations, PtNiO$_2$ is found to be structurally stable. The magnetic ground state is ferromagnetic with an effective magnetic moment of 1.01 $μ_B$ per unit cell. The electronic structure shows major contributions from Pt-$5d$, Ni-$3d$ and O-$2p$ orbitals with band crossing close to the Fermi level. The orbital contribution around 8 eV above the Fermi level are from the Pt-$s,p$ orbitals forming a kagome like electronic structure confirmed by surface Fermi surface spectral function. We found 20 pairs of confirmed Weyl nodes along the magnetic easy axis [100]. These results are expected to provide a useful and exciting platform for exploring and understanding the magnetic Weyl physics in delafossites. △ Less

Submitted 3 July, 2023; v1 submitted 1 December, 2022; originally announced December 2022.

Comments: 14 pages, 4 figures

Observation of gapless nodal-line states in NdSbTe

Authors: Sabin Regmi, Robert Smith, Anup Pradhan Sakhya, Milo Sprague, Mazharul Islam Mondal, Iftakhar Bin Elius, Nathan Valadez, Andrzej Ptok, Dariusz Kaczorowski, Madhab Neupane

Abstract: Lanthanide (Ln) based systems in the ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln 4f electrons. In this study, we carried out a thorough study of a LnSbTe system - NdSbTe - by using angle-resolved photoemission sp… ▽ More Lanthanide (Ln) based systems in the ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln 4f electrons. In this study, we carried out a thorough study of a LnSbTe system - NdSbTe - by using angle-resolved photoemission spectroscopy along with first-principles calculations and thermodynamic measurements. We experimentally detect the presence of multiple gapless nodal-line states, which is well supported by first-principles calculations. A dispersive and an almost non-dispersive nodal-line exist along the bulk X-R direction. Another nodal-line is present well below the Fermi level across the G- M direction, which is formed by bands with high Fermi velocity that seem to be sensitive to light polarization. Our study provides an insight into the electronic structure of a new LnSbTe material system that will aid towards understanding the connection of Ln elements with topological electronic structure in these systems. △ Less

Submitted 27 April, 2023; v1 submitted 30 September, 2022; originally announced October 2022.

Comments: 34 pages, 12 figures; Supplemental Material included

Journal ref: Phys. Rev. Materials 7, 044202 (2023)

Observation of anisotropic Dirac cones in the topological material Ti2Te2P

Authors: Gyanendra Dhakal, Firoza Kabir, Ashis K. Nandy, Alex Aperis, Anup Pradhan Sakhya, Subhadip Pradhan, Klauss Dimitri, Christopher Sims, Sabin Regmi, M. Mofazzel Hosen, Yangyang Liu, Luis Persaud, Dariusz Kaczorowski, Peter M. Oppeneer, Madhab Neupane

Abstract: Anisotropic bulk Dirac (or Weyl) cones in three dimensional systems have recently gained intense research interest as they are examples of materials with tilted Dirac (or Weyl) cones indicatig the violation of Lorentz invariance. In contrast, the studies on anisotropic surface Dirac cones in topological materials which contribute to anisotropic carrier mobility have been limited. By employing angl… ▽ More Anisotropic bulk Dirac (or Weyl) cones in three dimensional systems have recently gained intense research interest as they are examples of materials with tilted Dirac (or Weyl) cones indicatig the violation of Lorentz invariance. In contrast, the studies on anisotropic surface Dirac cones in topological materials which contribute to anisotropic carrier mobility have been limited. By employing angle-resolved photoemission spectroscopy and first-principles calculations, we reveal the anisotropic surface Dirac dispersion in a tetradymite material Ti2Te2P on the (001) plane of the Brillioun zone. We observe the quasi-elliptical Fermi pockets at the M -point of the Brillouin zone forming the anisotropic surface Dirac cones. Our calculations of the Z2 indices confirm that the system is topologically non-trivial with multiple topological phases in the same material. In addition, the observed nodal-line like feature formed by bulk bands makes this system topologically rich. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Comments: 21 pages, 17 figures, Supplementary Information included

Journal ref: Phys. Rev. B 106, 125124 (2022)

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Authors: Abhijit Biswas, Mingfei Xu, Kai Fu, Jingan Zhou, Rui Xu, Anand B. Puthirath, Jordan A. Hachtel, Chenxi Li, Sathvik Ajay Iyengar, Harikishan Kannan, Xiang Zhang, Tia Gray, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Dmitry A. Ruzmetov, Pankaj B. Shah, Tony Ivanov, Hanyu Zhu, Yuji Zhao, Pulickel M. Ajayan

Abstract: Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the gr… ▽ More Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: 5 Figures, Published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 121, 092105 (2022)

Unidirectional domain growth of hexagonal boron nitride thin films

Authors: Abhijit Biswas, Qiyuan Ruan, Frank Lee, Chenxi Li, Sathvik Ajay Iyengar, Anand B. Puthirath, Xiang Zhang, Harikishan Kannan, Tia Gray, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Manoj Tripathi, Alan Dalton, Boris I. Yakobson, Pulickel M. Ajayan

Abstract: Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates rem… ▽ More Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena. △ Less

Submitted 26 January, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Comments: 39 pages, 7 figures, Revised accepted version of the article

Journal ref: Applied Materials Today, Volume 30, February 2023, 101734

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Authors: Abhijit Biswas, Rishi Maiti, Frank Lee, Cecilia Y. Chen, Tao Li, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Xiang Zhang, Harikishan Kannan, Tia Gray, Md Abid Shahriar Rahman Saadi, Jacob Elkins, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Yuji Zhao, Alexander L. Gaeta, Manoj Tripathi, Alan Dalton, Pulickel M. Ajayan

Abstract: Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff… ▽ More Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget. △ Less

Submitted 12 October, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

Comments: 27 pages, 4 figures, Authors version of the article

Journal ref: Nanoscale Horizons, 2023, 8, 641-651

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Authors: Hang Chi, Yunbo Ou, Tim B. Eldred, Wenpei Gao, Sohee Kwon, Joseph Murray, Michael Dreyer, Robert E. Butera, Alexandre C. Foucher, Haile Ambaye, Jong Keum, Alice T. Greenberg, Yuhang Liu, Mahesh R. Neupane, George J. de Coster, Owen A. Vail, Patrick J. Taylor, Patrick A. Folkes, Charles Rong, Gen Yin, Roger K. Lake, Frances M. Ross, Valeria Lauter, Don Heiman, Jagadeesh S. Moodera

Abstract: Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as establ… ▽ More Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics. △ Less

Submitted 9 December, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Comments: Main: 9 pages, 5 figures; SI: 5 pages, 9 figures

Journal ref: Nature Communications 14, 3222 (2023)

Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

Authors: Hamed Vakili, Samiran Ganguly, George J. de Coster, Mahesh R. Neupane, Avik W. Ghosh

Abstract: The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability… ▽ More The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts. △ Less

Submitted 18 December, 2022; v1 submitted 27 March, 2022; originally announced March 2022.

Comments: 5 pages, 4 figures

Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8

Authors: Sabin Regmi, Tharindu Fernando, Yuzhou Zhao, Anup Pradhan Sakhya, Gyanendra Dhakal, Iftakhar Bin Elius, Hector Vazquez, Jonathan D Denlinger, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Madhab Neupane

Abstract: Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evid… ▽ More Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evidence of at and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of Niobium atoms and have Nb d character. They are found to be sensitive to polarization of the incident photon beam. Our study provides insight into the electronic structure and at band topology in an exfoliable kagome semiconductor thereby providing an important platform to understand the interaction of geometry and electron correlations in 2D material. △ Less

Submitted 21 December, 2022; v1 submitted 20 March, 2022; originally announced March 2022.

Comments: 7 pages, 4 figures; supplementary information included

Journal ref: Communications Materials, 3, 100 (2022)

Complex electronic structure evolution of NdSb across the magnetic transition

Authors: Anup Pradhan Sakhya, Baokai Wang, Firoza Kabir, Cheng-Yi Huang, M. Mofazzel Hosen, Bahadur Singh, Sabin Regmi, Gyanendra Dhakal, Klauss Dimitri, Milo Sprague, Robert Smith, Eric D. Bauer, Filip Ronning, Arun Bansil, Madhab Neupane

Abstract: The rare-earth monopnictide (REM) family, which hosts magnetic ground states with extreme magnetoresistance, has established itself as a fruitful playground for the discovery of interesting topological phases. Here, by using high-resolution angle-resolved photoemission spectroscopy complemented by first-principles density functional-theory based modeling, we examine the evolution of the electronic… ▽ More The rare-earth monopnictide (REM) family, which hosts magnetic ground states with extreme magnetoresistance, has established itself as a fruitful playground for the discovery of interesting topological phases. Here, by using high-resolution angle-resolved photoemission spectroscopy complemented by first-principles density functional-theory based modeling, we examine the evolution of the electronic structure of the candidate REM Dirac semimetal NdSb across the magnetic transition. A complex angel-wing-like band structure near the zone center and three arc-like features at the zone corner have been observed. This dramatic reconstruction of the itinerant bands around the zone center is shown to be driven by the magnetic transition: Specifically,, the Nd 5d electron band backfolds at the Gamma point and hybridizes with the Sb 5p hole bands in the antiferromagnetic phase. Our study indicates that antiferromagnetism plays an intricate role in the electronic structure of the REM family. △ Less

Submitted 21 May, 2023; v1 submitted 11 March, 2022; originally announced March 2022.

Comments: 13 pages, 13 figures; Supplemental Materials included

Journal ref: Phys. Rev. B 106, 235119, (2022)

Observation of Fermi arcs and Weyl nodes in a non-centrosymmetric magnetic Weyl semimetal

Authors: Anup Pradhan Sakhya, Cheng-Yi Huang, Gyanendra Dhakal, Xue-Jian Gao, Sabin Regmi, Baokai Wang, Wei Wen, R. -H. He, Xiaohan Yao, Robert Smith, Milo Sprague, Shunye Gao, Bahadur Singh, Hsin Lin, Su-Yang Xu, Fazel Tafti, Arun Bansil, Madhab Neupane

Abstract: Weyl semimetal (WSM), a novel state of quantum matter, hosts Weyl fermions as emergent quasiparticles resulting from the breaking of either inversion or time-reversal symmetry. Magnetic WSMs that arise from broken time-reversal symmetry provide an exceptional platform to understand the interplay between magnetic order and Weyl physics, but few WSMs have been realized. Here, we identify CeAlSi as a… ▽ More Weyl semimetal (WSM), a novel state of quantum matter, hosts Weyl fermions as emergent quasiparticles resulting from the breaking of either inversion or time-reversal symmetry. Magnetic WSMs that arise from broken time-reversal symmetry provide an exceptional platform to understand the interplay between magnetic order and Weyl physics, but few WSMs have been realized. Here, we identify CeAlSi as a new non-centrosymmetric magnetic WSM via angle-resolved photoemission spectroscopy (ARPES) and first-principles, density-functional theory based calculations. Our surface-sensitive vacuum ultraviolet ARPES data confirms the presence of surface Fermi arcs as, the smoking gun evidence for the existence of the Weyl semimetallic state in CeAlSi. We also observe bulk Weyl cones in CeAlSi using bulk-sensitive soft-X-ray ARPES measurements. In addition, Ce 4f at bands are found near the Fermi level, indicating that CeAlSi is a unique platform for investigating exotic quantum phenomena resulting from the interaction of topology, magnetism and electronic correlations. △ Less

Submitted 20 May, 2023; v1 submitted 10 March, 2022; originally announced March 2022.

Comments: 12 pages, 4 figures; supplementary information included

Journal ref: Phys. Rev. Materials Letter 7, L051202 (2023)

Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces

Authors: Eliezer Oliveira, Chenxi Li, Xiang Zhang, Anand Puthirath, Mahesh R. Neupane, James Weil, A. Glen Birdwell, Tony Ivanov, Seoyun Kong, Tia Grey, Harikishan Kannan, Robert Vajtai, Douglas Galvao, Pulickel Ajayan

Abstract: The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment… ▽ More The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment and the diamond surface quality. To investigate the stability of the oxygenated groups at specific diamond surfaces, we evaluated through fully atomistic reactive molecular mechanics (FARMM) simulations, using the ReaxFF force field, the formation energies of CO, COC, and COH groups on pristine and defective diamond surfaces (110), (111), and (311). According to our findings, the COH group has the lowest formation energy on a perfect (110) surface, while the COC is favored on a defective surface. As for the (111) surface, the COC group is the most stable for both pristine and defective surfaces. Similarly, COC group is also the most stable one on the defective/perfect (311) surface. In this way, our results suggest that if in a diamond film the (110) surface is the major exposed facet, the most adsorbed oxygen group could be either COH or COC, in which the COC would depend on the level of surface defects. △ Less

Submitted 24 January, 2022; originally announced January 2022.

Comments: 2 Figures, 1 Table, 6 pages

Journal ref: MRS Advances, 2022

Ultrafast relaxation of acoustic and optical phonons in a topological nodal-line semimetal ZrSiS

Authors: Yangyang Liu, Gyanendra Dhakal, Anup Pradhan Sakhya, John E. Beetar, Firoza Kabir, Sabin Regmi, Dariusz Kaczorowski, Michael Chini, Benjamin M. Fregoso, Madhab Neupane

Abstract: Despite being the most studied nodal line semimetal, a clear understanding of the transient state relaxation dynamics and the underlying mechanism in ZrSiS is lacking. Using time and angle resolved photoemission spectroscopy, we study the ultrafast relaxation dynamics in ZrSiS and reveal a unique relaxation in the bulk nodal-line state which is well captured by a simple model based on optical and… ▽ More Despite being the most studied nodal line semimetal, a clear understanding of the transient state relaxation dynamics and the underlying mechanism in ZrSiS is lacking. Using time and angle resolved photoemission spectroscopy, we study the ultrafast relaxation dynamics in ZrSiS and reveal a unique relaxation in the bulk nodal-line state which is well captured by a simple model based on optical and acoustic phonon cooling. We find linear decay processes for both optical and acoustic phonon relaxations with acoustic cooling suppressed at high temperatures. Our results reveal different decay mechanisms for the bulk and surface states and pave a way to understand the mechanism of conduction in this material. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Comments: 7 pages, 4 figures

Journal ref: Commun Phys 5, 203 (2022)

Unusual magnetic and transport properties in HoMn$_6$Sn$_6$ kagome magnet

Authors: Firoza Kabir, Randall Filippone, Gyanendra Dhakal, Y. Lee, Narayan Poudel, Jacob Casey, Anup Pradhan Sakhya, Sabin Regmi, Robert Smith, Pietro Manfrinetti, Liqin Ke, Krzysztof Gofryk, Madhab Neupane, Arjun K. Pathak

Abstract: With intricate lattice structures, kagome materials are an excellent platform to study various fascinating topological quantum states. In particular, kagome materials, revealing large responses to external stimuli such as pressure or magnetic field, are subject to special investigation. Here, we study the kagome-net HoMn$_6$Sn$_6$ magnet that undergoes paramagnetic to ferrimagnetic transition (bel… ▽ More With intricate lattice structures, kagome materials are an excellent platform to study various fascinating topological quantum states. In particular, kagome materials, revealing large responses to external stimuli such as pressure or magnetic field, are subject to special investigation. Here, we study the kagome-net HoMn$_6$Sn$_6$ magnet that undergoes paramagnetic to ferrimagnetic transition (below 376 K) and reveals spin-reorientation transition below 200 K. In this compound, we observe the topological Hall effect and substantial contribution of anomalous Hall effect above 100 K. We unveil the pressure effects on magnetic ordering at a low magnetic field from the pressure tunable magnetization measurement. By utilizing high-resolution angle-resolved photoemission spectroscopy, Dirac-like dispersion at the high-symmetry point K is revealed in the vicinity of the Fermi level, which is well supported by the first-principles calculations, suggesting a possible Chern-gapped Dirac cone in this compound. Our investigation will pave the way to understand the magneto-transport and electronic properties of various rare-earth-based kagome magnets. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. Materials 6, 064404 (2022)

Energy relaxation dynamics in a nodal-line semimetal

Authors: Benjamin M. Fregoso, Madhab Neupane, Anup Pradhan Sakhya

Abstract: We study the temperature relaxation dynamics of nodal-line semimetals after a sudden excitation in the presence of acoustic and optical phonon modes. We find that the nodal line constrains the electron momenta in scattering processes and, as a result, the temperature relaxation due to acoustic phonons is exponential as a function of time. However, depending on initial conditions, other functional… ▽ More We study the temperature relaxation dynamics of nodal-line semimetals after a sudden excitation in the presence of acoustic and optical phonon modes. We find that the nodal line constrains the electron momenta in scattering processes and, as a result, the temperature relaxation due to acoustic phonons is exponential as a function of time. However, depending on initial conditions, other functional forms are possible. In typical pump-probe experiments, the temperature relaxation is linear due to acoustic phonons with rates that vary as $\sim n^{1/2}$ with density. The temperature relaxation due to optical phonons is also linear with rates $\sim n^{-1/2}$ or $\sim n$. △ Less

Submitted 8 April, 2022; v1 submitted 26 October, 2021; originally announced October 2021.

Comments: 13 pages, 5 figures, new intro, clarifications added, typos corrected, published version

Journal ref: Phys. Rev. B 105, 144304 (2022)

Anisotropically large anomalous and topological Hall effect in a kagome magnet

Authors: Gyanendra Dhakal, Fairoja Cheenicode Kabeer, Arjun K. Pathak, Firoza Kabir, Narayan Poudel, Randall Filippone, Jacob Casey, Anup Pradhan Sakhya, Sabin Regmi, Christopher Sims, Klauss Dimitri, Pietro Manfrinetti, Krzysztof Gofryk, Peter M. Oppeneer, Madhab Neupane

Abstract: Recently, kagome materials have become an engrossing platform to study the interplay among symmetry, magnetism, topology, and electron correlation. The latest works on RMn6Sn6 (R = rare earth metal) compounds have illustrated that this family could be intriguing to investigate various physical phenomena due to large spin-orbit coupling and strong magnetic ordering. However, combined transport and… ▽ More Recently, kagome materials have become an engrossing platform to study the interplay among symmetry, magnetism, topology, and electron correlation. The latest works on RMn6Sn6 (R = rare earth metal) compounds have illustrated that this family could be intriguing to investigate various physical phenomena due to large spin-orbit coupling and strong magnetic ordering. However, combined transport and spectroscopic studies in RMn6Sn6 materials are still limited. Here, we report magnetic, magneto-transport, and angle-resolved photoemission spectroscopy measurements of a kagome magnet ErMn6Sn6 that undergoes antiferromagnetic (TN = 345 K) to ferrimagnetic (TC = 68 K) phase transitions in the presence of field. We observe large anomalous and topological Hall effects serving as transport signatures of the nontrivial Berry curvature. The isothermal magnetization exhibits strong anisotropic nature and the topological Hall effect of the compound depends on the critical field of metamagnetic transition. Our spectroscopic results complemented by theoretical calculations show the multi-orbital kagome fermiology. This work provides new insight into the tunability and interplay of topology and magnetism in a kagome magnet. △ Less

Submitted 12 October, 2021; originally announced October 2021.

Comments: 18 pages, 18 figures; Supplementary Information included, To be published in PRB

Journal ref: Phys. Rev. B 104, L161115 (2021)

Observation of multiple nodal-lines in SmSbTe

Authors: Sabin Regmi, Gyanendra Dhakal, Fairoja Cheenicode Kabeer, Neil Harrison, Firoza Kabir, Anup Pradhan Sakhya, Krzysztof Gofryk, Dariusz Kaczorowski, Peter M. Oppeneer, Madhab Neupane

Abstract: Having been a ground for various topological fermionic phases, the family of ZrSiS-type 111 materials has been under experimental and theoretical investigations. Within this family of materials, the subfamily LnSbTe (Ln = lanthanide elements) is gaining interests in recent times as the strong correlation effects and magnetism arising from the 4f electrons of the lanthanides can provide an importan… ▽ More Having been a ground for various topological fermionic phases, the family of ZrSiS-type 111 materials has been under experimental and theoretical investigations. Within this family of materials, the subfamily LnSbTe (Ln = lanthanide elements) is gaining interests in recent times as the strong correlation effects and magnetism arising from the 4f electrons of the lanthanides can provide an important platform to study the linking between topology, magnetism, and correlation. In this paper, we report the systematic study of the electronic structure of SmSbTe - a member of the LnSbTe subfamily - by utilizing angle-resolved photoemission spectroscopy in conjunction with first-principles calculations, transport, and magnetic measurements. Our experimental results identify multiple Dirac nodes forming the nodal-lines along the G- X and Z- R directions in the bulk Brillouin zone (BZ) as predicted by our theoretical calculations. A surface Dirac-like state that arises from the square net plane of the Sb atoms is also observed at the X point of the surface BZ. Our study highlights SmSbTe as a promising candidate to understand the topological electronic structure of LnSbTe materials. △ Less

Submitted 1 August, 2021; originally announced August 2021.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. Materials 6, L031201 (2022)

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Authors: Eliezer F. Oliveira, Mahesh R. Neupane, Chenxi Li, Harikishan Kannan, Xiang Zhang, Anand B. Puthirath, Pankaj B. Shah, A. Glen Birdwell, Tony G. Ivanov, Robert Vajtai, Douglas S. Galvao, Pulickel M. Ajayan

Abstract: Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond s… ▽ More Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 24 pages

Observation of gapped state in rare-earth monopnictide HoSb

Authors: M. Mofazzel Hosen, Gyanendra Dhakal, Baokai Wang, Narayan Poudel, Bahadur Singh, Klauss Dimitri, Firoza Kabir, Christopher Sims, Sabin Regmi, William Neff, Anan Bari Sarkar, Amit Agarwal, Daniel Murray, Franziska Weickert, Krzysztof Gofryk, Orest Pavlosiuk, Piotr Wisniewski, Dariusz Kaczorowski, Arun Bansil, Madhab Neupane

Abstract: The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy (ARPES), ma… ▽ More The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the G and X-symmetry points of the Brillouin zone (BZ), we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb. △ Less

Submitted 16 August, 2020; originally announced August 2020.

Comments: 13 pages, 10 figures, Supplementary Information included

Journal ref: Sci Rep 10, 12961 (2020)

Magnetic, transport, and thermal properties of $δ$-phase UZr$_2$

Authors: Xiaxin Ding, Tiankai Yao, Lyuwen Fu, Zilong Hua, Jason Harp, Chris Marianetti, Madhab Neupane, Michael E. Manley, David Hurley, Krzysztof Gofryk

Abstract: Alloys of hexagonal $δ$-phase UZr$_2$ have been synthesized and studied by means of heat capacity, magnetic susceptibility, magnetization, electrical resistivity, magnetoresistance, thermoelectric power, thermal conductivity measurements, for the first time, at temperatures from 1.8 to 300 K and in magnetic fields up to 8 T. The weak temperature dependence of the magnetic susceptibility and the sm… ▽ More Alloys of hexagonal $δ$-phase UZr$_2$ have been synthesized and studied by means of heat capacity, magnetic susceptibility, magnetization, electrical resistivity, magnetoresistance, thermoelectric power, thermal conductivity measurements, for the first time, at temperatures from 1.8 to 300 K and in magnetic fields up to 8 T. The weak temperature dependence of the magnetic susceptibility and the small value of both Seebeck (0.75 $μ$V/K at room temperature) and of the Sommerfeld coefficient (13.5 mJ mol$^{-1}$ K$^{-2}$) point to 5$f$-electrons in this material having a delocalized nature. The electrical resistivity and magnetoresistance indicate the presence of significant electronic disorder in $δ$-UZr$_2$, consistent with the disorder in its crystal structure. Density functional theory calculations have been performed and compared to experimental results. △ Less

Submitted 6 August, 2020; originally announced August 2020.

Comments: Accepted by Philosophical Magazine Letters

Journal ref: Philosophical Magazine Letters, 2020

Effect of dilute magnetism in a topological insulator

Authors: Firoza Kabir, M. Mofazzel Hosen, Xiaxin Ding, Christopher Lane, Gyanendra Dhakal, Yangyang Liu, Klauss Dimitri, Christopher Sims, Sabin Regmi, Luis Persaud, Yong Liu, Arjun K. Pathak, Jian-Xin Zhu, Krzysztof Gofryk, Madhab Neupane

Abstract: Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of TI is essential to realize the quantum anomalous Hall effec… ▽ More Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of TI is essential to realize the quantum anomalous Hall effect (QAHE) and other novel magneto-electric phenomena. Here, by using a combination of first principles calculations, magneto-transport, angle-resolved photoemission spectroscopy (ARPES), and time resolved ARPES (tr-ARPES), we study the electronic properties of Gadolinium (Gd) doped Sb2Te3. Our study shows that Gd doped Sb2Te3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. We further demonstrate that introducing diluted 4f-electron magnetism into the Sb2Te3 topological insulator system by the Gd doping creates surface magnetism in this system. Our results provide a new platform to investigate the interaction between dilute magnetism and topology in doped topological materials. △ Less

Submitted 24 June, 2020; originally announced June 2020.

Comments: 8 pages, 4 figures

Observation of multiple Dirac states in a magnetic topological material EuMg2Bi2

Authors: Firoza Kabir, M. Mofazzel Hosen, Fairoja Cheenicode Kabeer, Alex Aperis, Xiaxin Ding, Gyanendra Dhakal, Klauss Dimitri, Christopher Sims, Sabin Regmi, Luis Persaud, Krzysztof Gofryk, Peter M. Oppeneer, Dariusz Kaczorowski, Madhab Neupane

Abstract: Initiated by the discovery of topological insulators, topologically non-trivial materials, more specifically topological semimetals and metals have emerged as new frontiers in the field of quantum materials. In this work, we perform a systematic measurement of EuMg2Bi2, a compound with antiferromagnetic transition temperature at 6.7 K, observed via electrical resistivity, magnetization and specifi… ▽ More Initiated by the discovery of topological insulators, topologically non-trivial materials, more specifically topological semimetals and metals have emerged as new frontiers in the field of quantum materials. In this work, we perform a systematic measurement of EuMg2Bi2, a compound with antiferromagnetic transition temperature at 6.7 K, observed via electrical resistivity, magnetization and specific heat capacity measurements. By utilizing angle-resolved photoemission spectroscopy in concurrence with first-principles calculations, we observe Dirac cones at the corner and the zone center of the Brillouin zone. From our experimental data, multiple Dirac states at G and K points are observed, where the Dirac nodes are located at different energy positions from the Fermi level. Our experimental investigations of detailed electronic structure as well as transport measurements of EuMg2Bi2 suggest that it could potentially provide a platform to study the interplay between topology and magnetism. △ Less

Submitted 18 December, 2019; originally announced December 2019.

Comments: 7 pages, 3 figures

Observation of topological surface state in a superconducting material

Authors: Gyanendra Dhakal, M. Mofazzel Hosen, Ayana Ghosh, Christopher Lane, Karolina Gornicka, Michal J. Winiarski, Klauss Dimitri, Firoza Kabir, Christopher Sims, Sabin Regmi, William Neff, Luis Persaud, Yangyang Liu, Dariusz Kaczorowski, Jian-Xin Zhu, Tomasz Klimczuk, Madhab Neupane

Abstract: The discovery of topological insulator phase has ignited massive research interests in novel quantum materials. Topological insulators with superconductivity further invigorate the importance of materials providing the platform to study the interplay between these two unique states. However, the candidates of such materials are rare. Here, we report a systematic angle-resolved photoemission spectr… ▽ More The discovery of topological insulator phase has ignited massive research interests in novel quantum materials. Topological insulators with superconductivity further invigorate the importance of materials providing the platform to study the interplay between these two unique states. However, the candidates of such materials are rare. Here, we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of a superconducting material CaBi2 [Tc = 2 K], corroborated by the first principles calculations. Our study reveals the presence of Dirac cones with a topological protection in this system. Systematic topological analysis based on symmetry indicator shows the presence of weak topological indices in this material. Furthermore, our transport measurements show the presence of large magnetoresistance in this compound. Our results indicate that CaBi2 could potentially provide a material platform to study the interplay between superconductivity and topology. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Comments: 3 figures, 6 pages

Topological crystalline insulator state with type-II Dirac fermions in transition metal dipnictides

Authors: Baokai Wang, Bahadur Singh, Barun Ghosh, Wei-Chi Chiu, M. Mofazzel Hosen, Qitao Zhang, Li Ying, Madhab Neupane, Amit Agarwal, Hsin Lin, Arun Bansil

Abstract: The interplay between topology and crystalline symmetries in materials can lead to a variety of topological crystalline insulator (TCI) states. Despite significant effort towards their experimental realization, so far only Pb$_{1-x}$Sn$_x$Te has been confirmed as a mirror-symmetry protected TCI. Here, based on first-principles calculations combined with a symmetry analysis, we identify a rotationa… ▽ More The interplay between topology and crystalline symmetries in materials can lead to a variety of topological crystalline insulator (TCI) states. Despite significant effort towards their experimental realization, so far only Pb$_{1-x}$Sn$_x$Te has been confirmed as a mirror-symmetry protected TCI. Here, based on first-principles calculations combined with a symmetry analysis, we identify a rotational-symmetry protected TCI state in the transition-metal dipnictide RX$_2$ family, where R = Ta or Nb and X = P, As, or Sb. Taking TaAs$_2$ as an exemplar system, we show that its low-energy band structure consists of two types of bulk nodal lines in the absence of spin-orbit coupling (SOC) effects. Turning on the SOC opens a continuous bandgap in the energy spectrum and drives the system into a $C_2T$-symmetry-protected TCI state. On the (010) surface, we show the presence of rotational-symmetry-protected nontrivial Dirac cone states within a local bulk energy gap of $\sim$ 300 meV. Interestingly, the Dirac cones have tilted energy dispersion, realizing a type-II Dirac fermion state in a topological crystalline insulator. Our results thus indicate that the TaAs$_2$ materials family provides an ideal setting for exploring the unique physics associated with type-II Dirac fermions in rotational-symmetry-protected TCIs. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Comments: 7 pages, 7 figures, Accepted for publication in Physical Review B (2019)

Journal ref: Phys. Rev. B 100, 205118 (2019)

Temperature Dependent Electronic Structure in a Higher Order Topological Insulator Candidate EuIn$_2$As$_2$

Authors: Sabin Regmi, Md Mofazzel Hosen, Barun Ghosh, Bahadur Singh, Gyanendra Dhakal, Christopher Sims, Baokai Wang, Firoza Kabir, Klauss Dimitri, Yangyang Liu, Amit Agarwal, Hsin Lin, Dariusz Kaczorowski, Arun Bansil, Madhab Neupane

Abstract: The higher order topological insulator (HOTI) has enticed enormous research interests owing to its novelty in supporting gapless states along the hinges of the crystal. Despite several theoretical predictions, enough experimental confirmation of HOTI state in crystalline solids is still lacking. It has been well known that interplay between topology and magnetism can give rise to various magnetic… ▽ More The higher order topological insulator (HOTI) has enticed enormous research interests owing to its novelty in supporting gapless states along the hinges of the crystal. Despite several theoretical predictions, enough experimental confirmation of HOTI state in crystalline solids is still lacking. It has been well known that interplay between topology and magnetism can give rise to various magnetic topological states including HOTI and Axion insulator states. Here using the high-resolution angle-resolved photoemission spectroscopy (ARPES) combined with the first-principles calculations, we report a systematic study on the electronic band topology across the magnetic phase transition in EuIn2As2 which possesses an antiferromagnetic ground state below 16 K. Antiferromagnetic EuIn2As2 has been predicted to host both the Axion insulator and HOTI phase. Our experimental results show the clear signature of the evolution of the topological state across the magnetic transition. Our study thus especially suited to understand the interaction of higher order topology with magnetism in materials. △ Less

Submitted 9 November, 2019; originally announced November 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 102, 165153 (2020)

Dirac state switching in transition metal diarsenides

Authors: Gyanendra Dhakal, M. Mofazzel Hosen, Wei-Chi Chu, Bahadur Singh, Klauss Dimitri, BaoKai Wang, Firoza Kabir, Christopher Sims, Sabin Regmi, William Neff, Dariusz Kaczorowski, Arun Bansil, Madhab Neupane

Abstract: Topological Dirac and Weyl semimetals, which support low-energy quasiparticles in condensed matter physics, are currently attracting intense interest due to exotic physical properties such as large magnetoresistance and high carrier mobilities. Transition metal diarsenides such as MoAs2 and WAs2 have been reported to harbor very high magnetoresistance suggesting the possible existence of a topolog… ▽ More Topological Dirac and Weyl semimetals, which support low-energy quasiparticles in condensed matter physics, are currently attracting intense interest due to exotic physical properties such as large magnetoresistance and high carrier mobilities. Transition metal diarsenides such as MoAs2 and WAs2 have been reported to harbor very high magnetoresistance suggesting the possible existence of a topological quantum state, although this conclusion remains dubious. Here, based on systematic angle-resolved photoemission spectroscopy (ARPES) measurements and parallel first-principles calculations, we investigate the electronic properties of TAs2 (T = Mo, W). Importantly, clear evidence for switching the single-Dirac cone surface state in MoAs2 with the cleaving plane is observed, whereas a Dirac state is not observed in WAs2 despite its high magnetoresistance. Our study thus reveals the key role of the terminated plane in a low-symmetry system, and provides a new perspective on how termination can drive dramatic changes in electronic structures. △ Less

Submitted 31 July, 2019; originally announced August 2019.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Research 3, 023170 (2021)

Extreme Ultraviolet Time- and Angle-Resolved Photoemission Spectroscopy with 21.5 meV Resolution using High-Order Harmonic Generation from a Turn-Key Yb:KGW Amplifier

Authors: Yangyang Liu, John E. Beetar, Md Mofazzel Hosen, Gyanendra Dhakal, Christopher Sims, Firoza Kabir, Marc B. Etienne, Klauss Dimitri, Sabin Regmi, Yong Liu, Arjun K. Pathak, Dariusz Kaczorowski, Madhab Neupane, Michael Chini

Abstract: Characterizing and controlling electronic properties of quantum materials require direct measurements of non-equilibrium electronic band structures over large regions of momentum space. Here, we demonstrate an experimental apparatus for time- and angle-resolved photoemission spectroscopy using high-order harmonic probe pulses generated by a robust, moderately high power (20 W) Yb:KGW amplifier wit… ▽ More Characterizing and controlling electronic properties of quantum materials require direct measurements of non-equilibrium electronic band structures over large regions of momentum space. Here, we demonstrate an experimental apparatus for time- and angle-resolved photoemission spectroscopy using high-order harmonic probe pulses generated by a robust, moderately high power (20 W) Yb:KGW amplifier with tunable repetition rate between 50 and 150 kHz. By driving high-order harmonic generation (HHG) with the second harmonic of the fundamental 1025 nm laser pulses, we show that single-harmonic probe pulses at 21.8 eV photon energy can be effectively isolated without the use of a monochromator. The on-target photon flux can reach 5 x 10^10 photons/second at 50 kHz, and the time resolution is measured to be 320 fs. The relatively long pulse duration of the Yb-driven HHG source allows us to reach an excellent energy resolution of 21.5 meV, which is achieved by suppressing the space-charge broadening using a low photon flux of 1.5 x 10^8 photons/second at a higher repetition rate of 150 kHz. The capabilities of the setup are demonstrated through measurements in the topological semimetal ZrSiS and the topological insulator Sb2-xGdxTe3. △ Less

Submitted 10 December, 2019; v1 submitted 24 July, 2019; originally announced July 2019.

Comments: 13 pages, 8 figures