-
Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN
Authors:
A. Navarro-Quezada,
K. Gas,
A. Spindlberger,
F. Karimi,
M. Sawicki,
G. Ciatto,
A. Bonanni
Abstract:
In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN t…
▽ More
In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3$c$ positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30\%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450\,K to 500\,K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.
△ Less
Submitted 3 November, 2020;
originally announced November 2020.
-
Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN
Authors:
A. Navarro-Quezada,
K. Gas,
T. Truglas,
V. Bauernfeind,
M. Matzer,
D. Kreil,
A. Ney,
H. Groiss,
M. Sawicki,
A. Bonanni
Abstract:
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the format…
▽ More
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.
△ Less
Submitted 24 July, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
-
Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals
Authors:
A. Navarro-Quezada,
M. Aiglinger,
B. Faina,
K. Gas,
M. Matzer,
Tian Li,
R. Adhikari,
M. Sawicki,
A. Bonanni
Abstract:
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hoppin…
▽ More
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $γ$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.
△ Less
Submitted 24 September, 2018;
originally announced September 2018.
-
Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
Authors:
Thibaut Devillers,
Mauro Rovezzi,
Nevill Gonzalez Szwacki,
Sylwia Dobkowska,
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Andreas Grois,
Jan Suffczyński,
Andrea Navarro-Quezada,
Bogdan Faina,
Tian Li,
Pieter Glatzel,
Francesco d'Acapito,
Rafał Jakieła,
Maciej Sawicki,
Jacek A. Majewski,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron technique…
▽ More
Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.
△ Less
Submitted 13 November, 2013;
originally announced November 2013.
-
Magnetooptical properties of (Ga,Fe)N layers
Authors:
J. Papierska,
J. -G. Rousset,
W. Pacuski,
P. Kossacki,
A. Golnik,
M. Nawrocki,
J. A. Gaj,
J. Suffczyński,
I. Kowalik,
W. Stefanowicz,
M. Sawicki,
T. Dietl,
A. Navarro-Quezada,
B. Faina,
Tian Li,
A. Bonanni
Abstract:
Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals,…
▽ More
Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.
△ Less
Submitted 15 August, 2013;
originally announced August 2013.
-
Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N
Authors:
J. -G. Rousset,
J. Papierska,
W. Pacuski,
A. Golnik,
M. Nawrocki,
W. Stefanowicz,
S. Stefanowicz,
M. Sawicki,
R. Jakiela,
T. Dietl,
A. Navarro-Quezada,
B. Faina,
T. Li,
A. Bonanni,
J. Suffczynski
Abstract:
The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Op…
▽ More
The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Optical transitions originating from all three free excitons A, B and C, specific to the wurtzite structure, have been observed and their evolution with the magnetic field determined. It is demonstrated that the magnitude of the exciton splittings evaluated from reflectivity-MCD data can be overestimated by more than a factor of 2, as compared to the values obtained by describing the polarization-resolved reflectivity spectra with appropriate dielectric functions. A series of model calculations shows that the quantitative inaccuracy of MCD originates from a substantial influence of the magnetization-dependent exchange interactions not only on the spin splittings of excitons but also upon their linewidth and oscillator strength. At the same time, a method is proposed that allows to evaluate the field and temperature dependencies of the magnetization from MCD spectra. The accurate values of the excitonic splittings and of the magnetization reported here substantiate the magnitudes of the apparent $sp-d$ exchange integrals in (Ga,Fe)N previously determined.
△ Less
Submitted 9 October, 2014; v1 submitted 31 May, 2013;
originally announced May 2013.
-
Planar arrays of magnetic nanocrystals embedded in GaN
Authors:
A. Navarro-Quezada,
T. Devillers,
Tian Li,
A. Bonanni
Abstract:
Single planar arrays of Ga(x)Fe(4-x)N magnetic nanocrystals embedded in GaN have been fabricated in an epitaxial process. The phase of the nanocrystals and their epitaxial relationship with the host matrix are studied $via$ high-resolution transmission electron microscopy and high-resolution x-ray diffraction. By changing the growth parameters and mode, the crystallographic phase and chemical comp…
▽ More
Single planar arrays of Ga(x)Fe(4-x)N magnetic nanocrystals embedded in GaN have been fabricated in an epitaxial process. The phase of the nanocrystals and their epitaxial relationship with the host matrix are studied $via$ high-resolution transmission electron microscopy and high-resolution x-ray diffraction. By changing the growth parameters and mode, the crystallographic phase and chemical composition of the nanocrystals can be varied on demand. In view of the different magnetic properties of the various phases, applications in room-temperature ferromagnetic as well as antiferromagnetic spintronic devices are envisaged.
△ Less
Submitted 11 August, 2012;
originally announced August 2012.
-
Origin of low-temperature magnetic ordering in Ga1-xMnxN
Authors:
M. Sawicki,
T. Devillers,
S. Gałȩski,
C. Simserides,
S. Dobkowska,
B. Faina,
A. Grois,
A. Navarro-Quezada,
K. N. Trohidou,
J. A. Majewski,
T. Dietl,
A. Bonanni
Abstract:
By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy…
▽ More
By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy of state-of-the-art ab initio methods in predicting the magnetic characteristics of dilute magnetic insulators.
△ Less
Submitted 29 February, 2012; v1 submitted 28 February, 2012;
originally announced February 2012.
-
The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg
Authors:
A. Navarro-Quezada,
N. Gonzalez Szwacki,
W. Stefanowicz,
Tian Li,
A. Grois,
T. Devillers,
R. Jakiela,
B. Faina,
J. A. Majewski,
M. Sawicki,
T. Dietl,
A. Bonanni
Abstract:
The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the case of (Ga,Fe)N layers obtained without any codoping by shallow impurities. The structural analysis of the layers by high-resolution transmission electron mic…
▽ More
The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the case of (Ga,Fe)N layers obtained without any codoping by shallow impurities. The structural analysis of the layers by high-resolution transmission electron microscopy and by high-resolution- and synchrotron x-ray diffraction gives evidence of the fact that in the case of homogenous-Mg doping, Mg and Fe competitively occupy the Ga-substitutional cation sites, reducing the efficiency of Fe incorporation. Accordingly, the character of the magnetization is modified from ferromagnetic-like in the non-codoped films to paramagnetic in the case of homogeneous Mg codoping. The findings are discussed vis-`a-vis theoretical results obtained by ab initio computations, showing only a weak effect of codoping on the pairing energy of two Fe cations in bulk GaN. However, according to these computations, codoping reverses the sign of the paring energy of Fe cations at the Ga-rich surface, substantiating the view that the Fe aggregation occurs at the growth surface. In contrast to the homogenous deposition mode, the digital one is found to remarkably promote the aggregation of the magnetic ions. The Fe-rich nanocrystals formed in this way are distributed non-uniformly, giving reason for the observed deviation from a standard superparamagnetic behavior.
△ Less
Submitted 25 July, 2011;
originally announced July 2011.
-
Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
Authors:
J. Suffczynski,
A. Grois,
W. Pacuski,
A. Golnik,
J. A. Gaj,
A. Navarro-Quezada,
B. Faina,
T. Devillers,
A. Bonanni
Abstract:
Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination…
▽ More
Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination of the apparent exchange integrals N0alpha(app) = 0.0 +/- 0.1 eV and N0beta(app) = +0.8 +/- 0.2 eV. These non-standard values and signs of the s - d and p - d exchange energies are explained in terms of recent theories that suggest a contribution of the electron-hole exchange to the spin splitting of the conduction band and a renormalization of the free hole spin-splitting by a large p - d hybridization. According to these models, in the limit of a strong p - d coupling, the band gap of (Ga,Mn)N increases with x and the order of hole spin subbands is reversed, as observed.
△ Less
Submitted 22 November, 2010;
originally announced November 2010.
-
Element specific characterization of heterogeneous magnetism in (Ga,Fe)N films
Authors:
I. A. Kowalik,
A. Persson,
M. Á. Niño,
A. Navarro-Quezada,
B. Faina,
A. Bonanni,
T. Dietl,
D. Arvanitis
Abstract:
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signa…
▽ More
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signal at the Fe L-edges in remanence and at moderate magnetic fields at 300 K links the high temperature ferromagnetism with the Fe(3d) states. The XMCD response at the N K-edge highlights that the N(2p) states carry considerable spin polarization. We conclude that FeNδ nanocrystals, with δ> 0.25, stabilize the ferromagnetic response of the films.
△ Less
Submitted 3 November, 2010;
originally announced November 2010.
-
Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
Authors:
A. Bonanni,
M. Sawicki,
T. Devillers,
W. Stefanowicz,
B. Faina,
Tian Li,
T. E. Winkler,
D. Sztenkiel,
A. Navarro-Quezada,
M. Rovezzi,
R. Jakiela,
A. Grois,
M. Wegscheider,
W. Jantsch,
J. Suffczynski,
F. D'Acapito,
A. Meingast,
G. Kothleitner,
T. Dietl
Abstract:
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and ele…
▽ More
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.
△ Less
Submitted 20 June, 2011; v1 submitted 12 August, 2010;
originally announced August 2010.
-
Embedded magnetic phases in (Ga,Fe)N: the key role of growth temperature
Authors:
A. Navarro-Quezada,
W. Stefanowicz,
Tian Li,
B. Faina,
M. Rovezzi,
R. T. Lechner,
T. Devillers,
F. d'Acapito,
G. Bauer,
M. Sawicki,
T. Dietl,
A. Bonanni
Abstract:
The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and absorption, transmission electron microscopy, and superconducting quantum interference device magnetometry as a function of the growth temperature $T_{\mathrm{g}}$. Three contributions to the magnetization are identifi…
▽ More
The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and absorption, transmission electron microscopy, and superconducting quantum interference device magnetometry as a function of the growth temperature $T_{\mathrm{g}}$. Three contributions to the magnetization are identified: i) paramagnetic -- originating from dilute and non-interacting Fe$^{3+}$ ions substitutional of Ga, and dominating in layers obtained at the lowest considered $T_{\mathrm{g}}$ (800$^{\circ}$C); ii) superparamagnetic-like -- brought about mainly by ferromagnetic nanocrystals of $ε-$Fe$_3$N but also by $γ'$-Fe$_4$N and by inclusions of elemental $α$- and $γ$-Fe, and prevalent in films obtained in the intermediate $T_{\mathrm{g}}$ range; iii) component linear in the magnetic field and associated with antiferromagnetic interactions -- found to originate from highly nitridated Fe$_x$N ($x \leq$ 2) phases, like $ζ$-Fe$_2$N, and detected in samples deposited at the highest employed temperature, $T_{\mathrm{g}}$ = 950$^{\circ}$C. Furthermore, depending on $T_{\mathrm{g}}$, the Fe-rich nanocrystals segregate towards the sample surface or occupy two-dimensional planes perpendicular to the growth direction.
△ Less
Submitted 29 January, 2010;
originally announced January 2010.
-
Structural and paramagnetic properties of dilute Ga1-xMnxN
Authors:
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Bogdan Faina,
Andreas Grois,
Mauro Rovezzi,
Thibaut Devillers,
Francesco d'Acapito,
Andrea Navarro-Quezada,
Tian Li,
Rafal Jakiela,
Maciej Sawicki,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites i…
▽ More
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.
△ Less
Submitted 21 July, 2011; v1 submitted 21 December, 2009;
originally announced December 2009.
-
Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy
Authors:
Mauro Rovezzi,
Francesco D'Acapito,
Andrea Navarro-Quezada,
Bogdan Faina,
Tian Li,
Alberta Bonanni,
Francesco Filippone,
Aldo Amore Bonapasta,
Tomasz Dietl
Abstract:
X-ray absorption fine-structure (XAFS) measurements supported by {\em ab initio} computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe and Si-co-doped films grown by metalorganic vapour phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites…
▽ More
X-ray absorption fine-structure (XAFS) measurements supported by {\em ab initio} computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe and Si-co-doped films grown by metalorganic vapour phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites in GaN or precipitate in the form of $ε$-Fe$_3$N nanocrystals, which are ferromagnetic and metallic according to the DFT results. Precipitation can be hampered by reducing the Fe content, or by increasing the growth rate or by co-doping with Si. The near-edge region of the XAFS spectra provides information on the Fe charge state and shows its partial reduction from Fe$^{+3}$ to Fe$^{+2}$ upon Si co-doping, in agreement with the Fe electronic configurations expected within various implementations of DFT.
△ Less
Submitted 1 March, 2009; v1 submitted 26 February, 2009;
originally announced February 2009.
-
Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration
Authors:
A. Bonanni,
A. Navarro-Quezada,
Tian Li,
M. Wegscheider,
Z. Matej,
V. Holy,
R. T. Lechner,
G. Bauer,
M. Kiecana,
M. Sawicki,
T. Dietl
Abstract:
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by growth rate and co-doping with shallow impurities.
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by growth rate and co-doping with shallow impurities.
△ Less
Submitted 21 April, 2008;
originally announced April 2008.
-
GaN:$δ$-Mg grown by MOVPE: structural properties and their effect on the electronic and optical behaviour
Authors:
Tian Li,
Clemens Simbrunner,
Matthias Wegscheider,
Andrea Navarro-Quezada,
Martin Quast,
Klaus Schmidegg,
Alberta Bonanni
Abstract:
The effect of Mg $δ$-doping on the structural, electrical and optical properties of GaN grown $\textsl{via}$ metalorganic vapor phase epitaxy has been studied using transmission electron microscopy, secondary ion mass spectroscopy, atomic force microscopy, x-ray diffraction, Hall effect measurements and photoluminescence. For an average Mg concentration above 2.14 $\times$ 10$^{19}$ cm$^{-3}$, p…
▽ More
The effect of Mg $δ$-doping on the structural, electrical and optical properties of GaN grown $\textsl{via}$ metalorganic vapor phase epitaxy has been studied using transmission electron microscopy, secondary ion mass spectroscopy, atomic force microscopy, x-ray diffraction, Hall effect measurements and photoluminescence. For an average Mg concentration above 2.14 $\times$ 10$^{19}$ cm$^{-3}$, phase segregation occurs, as indicated by the presence of Mg-rich pyramidal inversion domains in the layers. We show that $δ$-doping promotes, in comparison to Mg continuous doping, the suppression of extended defects on the samples surface and improves significantly the morphology of the epilayers. Conversely, we can not confirm the reduction in the threading dislocation density - as a result of $δ$-doping - reported by other authors. In the phase separation regime, the hole concentration is reduced with increasing Mg concentration, due to self-compensation mechanisms. Below the solubility limit of Mg into GaN at our growth conditions, potential fluctuations result in a red-shift of the emission energy of the free-to-bound transition.
△ Less
Submitted 11 September, 2007;
originally announced September 2007.
-
Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N
Authors:
W. Pacuski,
P. Kossacki,
D. Ferrand,
A. Golnik,
J. Cibert,
M. Wegscheider,
A. Navarro-Quezada,
A. Bonanni,
M. Kiecana,
M. Sawicki,
T. Dietl
Abstract:
A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe^{3+} ions and holes in GaN, N_0 beta^(app) = +0.5 +/- 0.2 eV. This finding corroborates the recent suggestion that the strong p-d hy…
▽ More
A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe^{3+} ions and holes in GaN, N_0 beta^(app) = +0.5 +/- 0.2 eV. This finding corroborates the recent suggestion that the strong p-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.
△ Less
Submitted 24 August, 2007;
originally announced August 2007.
-
Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties
Authors:
A. Bonanni,
M. Kiecana,
C. Simbrunner,
Tian Li,
M. Sawicki,
M. Wegscheider. M. Quast,
H. Przybylinska,
A. Navarro-Quezada,
A. Wolos,
W. Jantsch,
T. Dietl
Abstract:
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramag…
▽ More
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramagnetic resonance (EPR), and magnetometry employing a superconducting quantum interference device (SQUID). A combination of TEM and EDS reveals the presence of coherent nanocrystals presumably FexN with the composition and lattice parameter imposed by the host. From both TEM and SIMS studies, it is stated that the density of nanocrystals and, thus the Fe concentration increases towards the surface. In layers with iron content x<0.4% the presence of ferromagnetic signatures, such as magnetization hysteresis and spontaneous magnetization, have been detected. We link the presence of ferromagnetic signatures to the formation of Fe-rich nanocrystals, as evidenced by TEM and EDS studies. This interpretation is supported by magnetization measurements after cooling in- and without an external magnetic field, pointing to superparamagnetic properties of the system. It is argued that the high temperature ferromagnetic response due to spinodal decomposition into regions with small and large concentration of the magnetic component is a generic property of diluted magnetic semiconductors and diluted magnetic oxides showing high apparent Curie temperature.
△ Less
Submitted 11 December, 2006; v1 submitted 7 December, 2006;
originally announced December 2006.
