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Topological properties of domain walls in antiferromagnetic topological insulators
Authors:
Gabriele Naselli,
Ion Cosma Fulga
Abstract:
Motivated by the study of stacking faults in weak topological insulators and the observation of magnetic domain walls in MnBi$_{2n}$Te$_{3n+1}$, we explore the topological properties of domain walls in antiferromagnetic topological insulators. We develop two tight-binding models: one based on a strong topological insulator with antiferromagnetic order, and another built from stacked Chern insulato…
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Motivated by the study of stacking faults in weak topological insulators and the observation of magnetic domain walls in MnBi$_{2n}$Te$_{3n+1}$, we explore the topological properties of domain walls in antiferromagnetic topological insulators. We develop two tight-binding models: one based on a strong topological insulator with antiferromagnetic order, and another built from stacked Chern insulators with alternating Chern numbers. Both systems are dual topological insulators, i.e. they are at the same time antiferromagnetic and crystalline topological insulators, but differ by the type of mirror symmetry protecting the crystalline phase: spinful versus spinless. We show that in the spinful case the mirror Chern number is invariant under time reversal and that it changes sign in the spinless case. This influences the properties of the two systems in the presence of a magnetic domain wall, which is created in the system when the magnetization is flipped via a time-reversal transformation. In the first type, the bulk of the domain wall is gapped but the defect will host chiral edge states when it ends on an external ferromagnetic surface. In the second, due to the flip in the mirror Chern number, the domain wall is a two-dimensional embedded semimetal with 2D gapless states protected by mirror symmetry. Our results show that domain walls can be a source of non-trivial topology, allowing to generate and manipulate gapless states within the bulk and the ferromagnetic surfaces of antiferromagnetic topological insulators.
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Submitted 15 May, 2025;
originally announced May 2025.
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Stability of Weyl node merging processes under symmetry constraints
Authors:
Gabriele Naselli,
György Frank,
Dániel Varjas,
Ion Cosma Fulga,
Gergő Pintér,
András Pályi,
Viktor Könye
Abstract:
Changes in the number of Weyl nodes in Weyl semimetals occur through merging processes, usually involving a pair of oppositely charged nodes. More complicated processes involving multiple Weyl nodes are also possible, but they typically require fine tuning and are thus less stable. In this work, we study how symmetries affect the allowed merging processes and their stability, focusing on the combi…
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Changes in the number of Weyl nodes in Weyl semimetals occur through merging processes, usually involving a pair of oppositely charged nodes. More complicated processes involving multiple Weyl nodes are also possible, but they typically require fine tuning and are thus less stable. In this work, we study how symmetries affect the allowed merging processes and their stability, focusing on the combination of a two-fold rotation and time-reversal ($C_2\mathcal{T}$) symmetry. We find that, counter-intuitively, processes involving a merging of three nodes are more generic than processes involving only two nodes. Our work suggests that multi-Weyl-merging may be observed in a large variety of quantum materials, and we discuss SrSi$_2$ and bilayer graphene as potential candidates
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Submitted 8 November, 2024; v1 submitted 13 March, 2024;
originally announced March 2024.
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Nontrivial gapless electronic states at the stacking faults of weak topological insulators
Authors:
Gabriele Naselli,
Viktor Könye,
Sanjib Kumar Das,
G. G. N. Angilella,
Anna Isaeva,
Jeroen van den Brink,
Cosma Fulga
Abstract:
Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they break crystal symmetries that can protect the topological states. On the other hand, in recent years it has been shown that lattice defects can act as a source of n…
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Lattice defects such as stacking faults may obscure electronic topological features of real materials. In fact, defects are a source of disorder that can enhance the density of states and conductivity of the bulk of the system and they break crystal symmetries that can protect the topological states. On the other hand, in recent years it has been shown that lattice defects can act as a source of nontrivial topology. Motivated by recent experiments on three-dimensional (3D) topological systems such as Bi$_2$TeI and Bi$_{14}$Rh$_3$I$_9$, we examine the effect of stacking faults on the electronic properties of weak topological insulators (WTIs). Working with a simple model consisting of a 3D WTI formed by weakly-coupled two-dimensional (2D) topological layers separated by trivial spacers, we find that 2D stacking faults can carry their own, topologically nontrivial gapless states. Depending on the WTI properties, as well as the way in which the stacking fault is realized, the latter can form a topologically protected 2D semimetal, but also a 2D topological insulator which is embedded in the higher-dimensional WTI bulk. This suggests the possibility of using stacking faults in real materials as a source of topologically nontrivial, symmetry-protected conducting states.
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Submitted 14 June, 2022;
originally announced June 2022.
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Magnetic warping in topological insulators
Authors:
Gabriele Naselli,
Ali G. Moghaddam,
Solange Di Napoli,
Veronica Vildosola,
Ion Cosma Fulga,
Jeroen van den Brink,
Jorge I. Facio
Abstract:
We analyze the electronic structure of topological surface states in the family of magnetic topological insulators MnBi$_{2n}$Te$_{3n+1}$. We show that, at natural-cleavage surfaces, the Dirac cone warping changes its symmetry from hexagonal to trigonal at the magnetic ordering temperature. In particular, an energy splitting develops between the surface states of same band index but opposite surfa…
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We analyze the electronic structure of topological surface states in the family of magnetic topological insulators MnBi$_{2n}$Te$_{3n+1}$. We show that, at natural-cleavage surfaces, the Dirac cone warping changes its symmetry from hexagonal to trigonal at the magnetic ordering temperature. In particular, an energy splitting develops between the surface states of same band index but opposite surface momenta upon formation of the long-range magnetic order. As a consequence, measurements of such energy splittings constitute a simple protocol to detect the magnetic ordering via the surface electronic structure, alternative to the detection of the surface magnetic gap. Interestingly, while the latter signals a nonzero surface magnetic flux, the trigonal warping predicted here is, in addition, sensitive to the direction of the surface magnetic flux.
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Submitted 12 September, 2022; v1 submitted 18 May, 2022;
originally announced May 2022.
