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Micromechanics of compressive and tensile forces in partially-bonded granular materials
Authors:
Abrar Naseer,
Karen E. Daniels,
Tejas G. Murthy
Abstract:
In granular media, the presence of even small amounts of interparticle cohesion manifests as an increase in the bulk strength and stiffness, effects that are typically associated with an increase in the average number of constraints per particle. By performing an ensemble of isotropic compression experiments, all starting from the same initial particle configuration but with varying fraction of bo…
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In granular media, the presence of even small amounts of interparticle cohesion manifests as an increase in the bulk strength and stiffness, effects that are typically associated with an increase in the average number of constraints per particle. By performing an ensemble of isotropic compression experiments, all starting from the same initial particle configuration but with varying fraction of bonded particles, we use photoelastic force measurements to identify the causes of this phenomenon at the particle-scale and meso-scale. As a function of the percentage of bonded particles, we measure a small decrease in the critical packing fraction at which jamming occurs. Above jamming, the local pressure increases predominantly for the bonded particles, measured relative to the unbonded case, through approximately equal contributions of both tensile and compressive forces. Histograms of the magnitude of the interparticle forces become broader for systems with more bonded particles. We measure both pressure and coordination number as a function of distance from a bonded dimer, both of which are locally enhanced for nearest neighbors, indicating that dimers appear to act as areas of concentrated force and connectivity that improve rigidity.
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Submitted 25 July, 2025;
originally announced July 2025.
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Topological signatures of jamming in granular force networks via persistent homology
Authors:
S Vishali,
Abrar Naseer,
Vijay Natarajan,
Tejas G Murthy
Abstract:
Granular materials exhibit intricate force networks, often concentrated in chains rather than being uniformly distributed. These meso-scale structures are complex to characterize, owing to their heterogeneous and anisotropic nature. We present a topological analysis in which we characterize force networks by studying the connectivity of contact forces in granular materials. We obtain the force net…
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Granular materials exhibit intricate force networks, often concentrated in chains rather than being uniformly distributed. These meso-scale structures are complex to characterize, owing to their heterogeneous and anisotropic nature. We present a topological analysis in which we characterize force networks by studying the connectivity of contact forces in granular materials. We obtain the force network data during the isotropic compression of a 2D granular ensemble, which comprises of bidisperse photoelastic disks. The force chains are visualized using a bright-field polariscope, which are then analyzed using photoelasticity techniques to get contact force information across all the particles in the granular ensemble. The forces and contact network are studied using topological descriptors. We analyze the evolution of these descriptors using methods developed in the areas of computational topology and persistent homology. Specifically, we evaluate the number of homology class generators to capture critical changes in network connectivity with the evolution of packing fraction. Building on previous applications of persistent homology, our topological analysis of the force network provides valuable insights by distinguishing different phases of particle interactions and revealing unique structural transitions around jamming and thus help enhance our understanding of the stability and jamming dynamics in granular systems.
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Submitted 5 August, 2025; v1 submitted 18 July, 2025;
originally announced July 2025.
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Photoelastic Grain Solver v2.0: An updated tool for analysis of force measurements in granular materials
Authors:
Carmen L. Lee,
Lori McCabe,
Ben McMillan,
Abrar Naseer,
Dong Xie,
Ted Brzinski,
Karen E. Daniels,
Tejas Murthy,
Kerstin Nordstrom
Abstract:
Photoelastic force imaging is an experimental technique whereby a birefringent granular material is imaged with a polariscope to characterize the internal stress state of a granular material. Photoelasticimetry is the only proven experimental technique that allows researchers to measure the shear and normal forces at every particle contact in a granular packing. In 2017, Kollmer et al. [Rev. Sci.…
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Photoelastic force imaging is an experimental technique whereby a birefringent granular material is imaged with a polariscope to characterize the internal stress state of a granular material. Photoelasticimetry is the only proven experimental technique that allows researchers to measure the shear and normal forces at every particle contact in a granular packing. In 2017, Kollmer et al. [Rev. Sci. Instrum. 88, 051808 (2017)] developed an open-source software to perform this analysis. Here, we present the next substantial update to this software package. The new version improves resolution and efficiency and substantially changes the software architecture. The structural changes better facilitate add-ons, modules, and future improvements to the performance, accessibility, and versatility of the tool. Besides updates to the core software, we introduce new infrastructure to support the ongoing development of software, documentation, and training materials. The full development team, software, and supporting resources are available at https://github.com/photoelasticity .
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Submitted 2 July, 2025;
originally announced July 2025.
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Extracting Contact Forces in Cohesive Granular Ensembles
Authors:
Abrar Naseer,
Karen E. Daniels,
Tejas G. Murthy
Abstract:
Interparticle cohesion is prevalent in stored powders, geological formations, and infrastructure engineering, yet a comprehensive understanding of the effects of its micro-mechanics on bulk properties has not been established experimentally. One challenge has been that while photoelasticy has been widely and successfully used to measure the vector contact forces within dry granular systems, where…
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Interparticle cohesion is prevalent in stored powders, geological formations, and infrastructure engineering, yet a comprehensive understanding of the effects of its micro-mechanics on bulk properties has not been established experimentally. One challenge has been that while photoelasticy has been widely and successfully used to measure the vector contact forces within dry granular systems, where the particle-particle interactions are solely frictional and compressive in nature, it has seen little development in systems where tensile forces are present. The key difficulty has been the inability to distinguish between compressive and tensile forces, which appear identically within the photoelastic response.
Here, we present a novel approach which solves this problem, by an extension to the open-source PeGS (Photoelastic Grain Solver) software available at https://github.com/photoelasticity. Our new implementation divides the procedure of finding vector contact forces into two steps: first evaluating the vector contact forces on the non-cohesive particles present in the ensemble, followed by using an equilibrium constraint to solve for the forces in the bonded particles. We find that in the dilute limit, for up to 25% bonded dimers, we can solve for all forces since each particle has only one force bearing contact that can potentially transmit tensile forces. While the case of dimers is an idealised version of cohesive granular ensemble, it provides an important first step towards experimentally studying the micro-mechanics of cohesive granular materials.
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Submitted 1 July, 2025;
originally announced July 2025.
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Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
Authors:
Keshari Nandan,
Ateeb Naseer,
Amit Agarwal,
Somnath Bhowmick,
Yogesh S. Chauhan
Abstract:
Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the boundaries of miniaturization, it is intriguing to consider that the ultimate limit of contacted gate pitch could be reached with remarkable 1 nm gate-length transisto…
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Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the boundaries of miniaturization, it is intriguing to consider that the ultimate limit of contacted gate pitch could be reached with remarkable 1 nm gate-length transistors. Here, we identify InSe, Bi2O2Se, and MoSi2N4 as potential two-dimensional semiconductors for 1 nm transistors with low contact resistance and outstanding interface properties. We employ a fully self-consistent ballistic quantum transport model starting from first-principle calculations. Our simulations show that the interplay between electrostatics and quantum tunneling influences the performance of these devices over the device design space. MoSi2N4 channels have the best immunity to quantum tunneling, and Bi2O2Se channel devices have the best electrostatics. We show that for a channel length of 12 nm, all the devices can deliver I_$ON$/I_$OFF$ > 10^3 , suitable for electronic applications, and Bi2O2Se is the best-performing channel material.
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Submitted 14 December, 2024; v1 submitted 1 December, 2024;
originally announced December 2024.
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Harnessing Room-Temperature Ferroelectricity in Metal Oxide Monolayers for Advanced Logic Devices
Authors:
Ateeb Naseer,
Musaib Rafiq,
Somnath Bhowmick,
Amit Agarwal,
Yogesh Singh Chauhan
Abstract:
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lyin…
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Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lying valence bands. Such a unique band structure limits the long thermal tail of the hot carriers, mitigating subthreshold thermionic leakage and allowing field-effect transistors (FETs) to function beyond the bounds imposed on conventional FETs by thermodynamics. Our quantum transport simulations reveal that the FETs based on these MO monolayers exhibit a large ON/OFF ratio with an average subthreshold swing of less than 60 mV/decade at room temperature, even for short gate lengths. Our work motivates further exploration of the MO monolayers for developing advanced, high-performance memory and logic devices.
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Submitted 25 October, 2024;
originally announced October 2024.
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Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers
Authors:
Ateeb Naseer,
Achintya Priydarshi,
Pritam Ghosh,
Raihan Ahammed,
Yogesh Singh Chauhan,
Somnath Bhowmick,
Amit Agarwal
Abstract:
Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96…
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Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.
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Submitted 29 May, 2024;
originally announced May 2024.