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Pressure induced insulator-to-metal transition in few-layer FePS$_3$ at 1.5 GPa
Authors:
Bidyut Mallick,
Mainak Palit,
Rajkumar Jana,
Soumik Das,
Anudeepa Ghosh,
Janaky Sunil,
Sujan Maity,
Bikash Das,
Tanima Kundu,
Chandrabhas Narayana,
Ayan Datta,
Subhadeep Datta
Abstract:
In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott transition. Here, we investigate room-temperature layer-dependent insulator-metal transition (IMT) and probable spin-crossover (SCO) in vdW magnet, FePS$_3$, under high-pressure using micro-Raman scattering. Experimentally…
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In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott transition. Here, we investigate room-temperature layer-dependent insulator-metal transition (IMT) and probable spin-crossover (SCO) in vdW magnet, FePS$_3$, under high-pressure using micro-Raman scattering. Experimentally obtained spectra, in agreement with the computed Raman modes, indicate evidence of IMT of FePS$_3$ started with a thickness-dependent critical pressure ($P_c$) which reduces to 1.5 GPa in trilayer flakes compared to 10.8 GPa for the bulk counterpart. Using a phenomenological model, we argue that strong structural anisotropy in few-layer flakes enhances the in-plane strain under applied pressure and is, therefore, ultimately responsible for reducing the critical pressure for the IMT with decreasing layer numbers. Reduction of the critical pressure for phase transition in vdW magnets to 1-2 GPa marks the possibility of using intercalated few-layers in the field-effect transistor device architecture, and thereby, avoiding the conventional use of the diamond anvil cell (DAC).
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Submitted 31 May, 2024; v1 submitted 2 March, 2023;
originally announced March 2023.
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Secondary Phase Limited Metal-Insulator Phase Transition in Chromium Nitride Thin Films
Authors:
Bidesh Biswas,
Sourjyadeep Chakraborty,
Anjana Joseph,
Shashidhara Acharya,
Ashalatha Indiradevi Kamalasanan Pillai,
Chandrabhas Narayana,
Vijay Bhatia,
Magnus Garbrecht,
Bivas Saha
Abstract:
Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguin…
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Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguing metal-insulator phase transition. While CrN bulk single-crystals exhibit the characteristic metal-insulator transition accompanied with structural (orthorhombic-to-rocksalt) and magnetic (antiferromagnetic-to-paramagnetic) transition at ~260-280K, observation of such phase transition in thin-film CrN has been scarce and highly debated. In this work, the formation of the secondary metallic Cr2N phase during the growth is demonstrated to inhibit the observation of metal-insulator phase transition in CrN thin films. When the Cr-flux during deposition is reduced below a critical limit, epitaxial and stoichiometric CrN thin film is obtained that reproducibly exhibits the phase transition. Annealing of the mixed-phase film inside reducing NH3 environment converts the Cr2N into CrN, and a discontinuity in the electrical resistivity at ~ 277 K appears which supports the underlying hypothesis. A clear demonstration of the origin behind the controversy of the metal-insulator transition in CrN thin films marks significant progress and would enable its nanoscale device realization.
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Submitted 19 January, 2022;
originally announced January 2022.
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Phase transition between two different orientations of the Q phase in the NaNbO$_3$ thin film
Authors:
A. V. Pavlenko,
D. V. Stryukov,
M. V. Vladimirov,
A. E. Ganzha,
S. A. Udovenko,
Anjana Joseph,
Janaky Sunil,
Chandrabhas Narayana,
R. G. Burkovsky,
I. P. Raevski,
N. V. Ter-Oganessian
Abstract:
Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO$_3$/SrRuO$_3$/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and Raman spectroscopy. It is found that at room temperature NaNbO$_3$ is in ferroelectric state, whereas the temperature-dependent dielectric constant experiences…
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Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO$_3$/SrRuO$_3$/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and Raman spectroscopy. It is found that at room temperature NaNbO$_3$ is in ferroelectric state, whereas the temperature-dependent dielectric constant experiences a broad maximum at 440~K on cooling and at 500~K on heating and reveals a diffuse phase transition. Reciprocal space mapping shows the presence of both anti-phase and in-phase tilting of oxygen octahedra. The temperature dependence of the M-point reflections suggests reorientation of the in-phase octahedra tilting axis from being parallel to the substrate at room temperature to perpendicular orientation at high temperatures. The temperature evolution of the shape of the Raman spectra reveal the decrease of the number of constituting peaks on heating. These results are interpreted as indicating a temperature-driven transition between two different orientations of the bulk ferroelectric Q phase with respect to the interface, namely between the state with electric polarization pointing at $\approx45^{\rm o}$ to the normal at room temperature to the state with polarization parallel to the interface above the transition. Transitions of this kind can be anticipated from theoretical considerations, while the experimental evidences of such are yet scarce.
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Submitted 8 December, 2021;
originally announced December 2021.
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Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition
Authors:
M. B. Shoker,
O. Pagès,
V. J. B. Torres,
A. Polian,
J. -P. Itié,
G. K. Pradhan,
C. Narayana,
M. N. Rao,
R. Rao,
C. Gardiennet,
G. Kervern,
K. Strzałkowski,
F. Firszt
Abstract:
The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes…
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The generic 1-bond:2-mode percolation type Raman signal inherent to the short bond of common (A,B)C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive mesoscope to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale with a focus on ZnCdSe. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (ZnBeSe, ZnSeS) or it opens (ZnCdSe), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the closure case, in which the system resonantly stabilizes ante transition at its exceptional point corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity.
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Submitted 17 August, 2020;
originally announced August 2020.
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Raman scattering investigation of the pressure induced structural phase transition in LaCrO3
Authors:
V. S. Bhadram,
Abhijit Sen,
A. Sundaresan,
Chandrabhas Narayana
Abstract:
We report the pressure dependence of perovskite distortions in rare-earth (R) orthochromites (RCrO3) probed using Raman scattering in order to investigate the origin of structural transition from orthorhombic Pnma to rhombohedral R-3C phase in LaCrO3. The pressure induced changes in octahedral tilt modes demonstrates that tilt distortions are suppressed in LaCrO3 and are enhanced in the remaining…
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We report the pressure dependence of perovskite distortions in rare-earth (R) orthochromites (RCrO3) probed using Raman scattering in order to investigate the origin of structural transition from orthorhombic Pnma to rhombohedral R-3C phase in LaCrO3. The pressure induced changes in octahedral tilt modes demonstrates that tilt distortions are suppressed in LaCrO3 and are enhanced in the remaining members of RCrO3 family. This crossover between the two opposite pressure behaviors occurs at a critical R-ion radius of 1.20 Å. We attempted to establish the relation between this unusual crossover and compressibility at Cr- and R-sites by probing Raman phonon modes sensitive to the mean bond strength of Cr-O and R-O respectively. Finally, we study the bond-length splitting of both CrO6 and RO12 polyhedra to ascertain the role of polyhedral self distortion in determining the pressure dependent evolution of perovskite distortions.
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Submitted 13 August, 2020;
originally announced August 2020.
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Growth of epitaxial ReS2 thin film by pulsed laser deposition
Authors:
B. Vishal,
H. Sharona,
U. Bhat,
A. Paul,
M. B. Sreedhara,
V. Rajaji,
S. C. Sarma,
C. Narayana,
S. C. Peter,
R. Datta
Abstract:
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. Th…
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We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. The smoothness and quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over large area for practical device application.
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Submitted 23 October, 2018;
originally announced October 2018.
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Switching of the topologically trivial and non-trivial quantum phase transitions in compressed 1T-TiTe2: Experiments and Theory
Authors:
V. Rajaji,
Utpal Dutta,
P. C. Sreeparvathy,
Saurav Ch. Sarma,
Y. A. Sorb,
B. Joseph,
Subodha Sahoo,
Sebastian C. Peter,
V. Kanchana,
Chandrabhas Narayana
Abstract:
We report the structural, vibrational and electrical transport properties up to 16 GPa of the 1T-TiTe2, a prominent layered 2D system, which is predicted to show a series of topologically trivial - nontrivial transitions under hydrostatic compression. We clearly show signatures of two iso-structural transition at 2 GPa and 4 GPa obtained from the minima in c/a ratio concomitant with the phonon lin…
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We report the structural, vibrational and electrical transport properties up to 16 GPa of the 1T-TiTe2, a prominent layered 2D system, which is predicted to show a series of topologically trivial - nontrivial transitions under hydrostatic compression. We clearly show signatures of two iso-structural transition at 2 GPa and 4 GPa obtained from the minima in c/a ratio concomitant with the phonon linewidth anomalies of Eg and A1g modes at around the same pressures, providing strong indication of unusual electron-phonon coupling associated to these transitions. Resistivity presents nonlinear behavior over similar pressure ranges providing a strong indication of the electronic origin of these pressure driven isostructural transitions. Our data thus provide clear evidences of topological changes at A and L point of the Brillouin zone predicted to be present in the compressed 1T-TiTe2. Between 4 GPa and 8 GPa, the c/a ratio shows a plateau suggesting a transformation from an anisotropic 2D layer to a quasi 3D crystal network. First principles calculations suggest that the 2D to quasi 3D evolution without any structural phase transitions is mainly due to the increased interlayer Te-Te interactions (bridging) via the charge density overlap. In addition to the pressure dependent isostructural phase transitions, our data also evidences the occurrence of a first order structural phase transition from the trigonal (P-3m1) phase at higher pressures. We estimate the start of this structural phase transition to be 8 GPa and the symmetric of the new high-pressure phase to be monoclinic (C2/m).
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Submitted 4 September, 2017;
originally announced September 2017.
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Substrate induced tuning of compressive strain and phonon modes in large area MoS2 and WS2 van der Waals epitaxial thin films
Authors:
Rajib Sahu,
Dhanya Radhakrishnan,
Badri Vishal,
Devendra Singh Negi,
Anomitra Sil,
Chandrabhas Narayana,
Ranjan Datta
Abstract:
Large area MoS2 and WS2 van der Waals epitaxial thin films with complete control over number of layers including monolayer is grown by pulsed laser deposition utilizing slower growth kinetics. The films grown on c-plane sapphire show stiffening of A1g and E12g phonon modes with decreasing number of layers for both MoS2 and WS2. The observed stiffening translate into the compressive strain of 0.52…
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Large area MoS2 and WS2 van der Waals epitaxial thin films with complete control over number of layers including monolayer is grown by pulsed laser deposition utilizing slower growth kinetics. The films grown on c-plane sapphire show stiffening of A1g and E12g phonon modes with decreasing number of layers for both MoS2 and WS2. The observed stiffening translate into the compressive strain of 0.52 % & 0.53 % with accompanying increase in fundamental direct band gap to 1.74 and 1.68 eV for monolayer MoS2 and WS2, respectively. The strain decays with the number of layers. HRTEM imaging directly reveals the nature of atomic registry of van der Waals layers with the substrate and the associated compressive strain. The results demonstrate a practical route to stabilize and engineer strain for this class of material over large area device fabrication.
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Submitted 18 October, 2016;
originally announced October 2016.
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Pressure induced electronic topological transition in Sb2S3
Authors:
Y. A. Sorb,
V. Rajaji,
P. S. Malavi,
U. Subbarao,
P. Hadappa,
S. Karmakar,
Sebastian C. Peter,
C. Narayana
Abstract:
Pressure induced electronic topological transitions in the wide band gap semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy, resistivity and the available literature on the x-ray diffraction studies. In this report, the vibrational and the transport properties of Sb2S3 have been studied up to 2…
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Pressure induced electronic topological transitions in the wide band gap semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy, resistivity and the available literature on the x-ray diffraction studies. In this report, the vibrational and the transport properties of Sb2S3 have been studied up to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes Ag(2), Ag(3) and B2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies also shows an anomaly around this pressure. The changes in resistivity as well as Raman line widths can be ascribed to the changes in the topology of the Fermi surface which induces the electron-phonon and the strong phonon-phonon coupling, indicating a clear evidence of the electronic topological transition (ETT) in Sb2S3. The pressure dependence of a/c ratio plot obtained from the literature showed a minimum at ~ 5 GPa, which is consistent with our high pressure Raman and resistivity results. Finally, we give the plausible reasons for the non-existence of a non-trivial topological state in Sb2S3 at high pressures.
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Submitted 11 August, 2015;
originally announced August 2015.
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Effect of pressure on octahedral distortions in RCrO3 (R = Lu, Tb, Gd, Eu, Sm): The role of R-ion size and its implications
Authors:
Venkata Srinu Bhadram,
Diptikanta Swain,
R Dhanya,
Maurizio Polentarutti,
A Sundaresan,
Chandrabhas Narayana
Abstract:
The effect of rare-earth ion size on the octahedral distortions in rare-earth chromites (RCrO3, R = Lu, Tb, Gd, Eu, Sm) crystallizing in the orthorhombic structure has been studied using Raman scattering and synchrotron powder x-ray diffraction up to 20 GPa. From our studies on RCrO3 we found that the octahedral tilts (distortions) increase with pressure. This is contrary to the earlier report whi…
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The effect of rare-earth ion size on the octahedral distortions in rare-earth chromites (RCrO3, R = Lu, Tb, Gd, Eu, Sm) crystallizing in the orthorhombic structure has been studied using Raman scattering and synchrotron powder x-ray diffraction up to 20 GPa. From our studies on RCrO3 we found that the octahedral tilts (distortions) increase with pressure. This is contrary to the earlier report which suggests that in LaCrO3, the distortions decrease with pressure leading to a more ordered phase at high pressure. Here we observe that the rate of increase in distortion decreases with the increase in R-ion radii. This occurs due to the reduction in the compression of RO12 polyhedra with a corresponding increase in the compression of the CrO6 octahedra with increasing R-ion radii. From the Raman studies, we predict a critical R-ion radii, above which we expect the distortions in RCrO3 to reduce with increasing pressure leading to what is observed in the case of LaCrO3. These Raman results are consistent with our pressure dependent structural studies on RCrO3 (R = Gd, Eu, Sm). Also, our results suggest that the pressure dependence of Néel temperature, TNCr, (where the Cr3+ spin orders) in RCrO3 is mostly affected by the compressions of Cr-O bonds rather than the alteration of octahedral tilts.
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Submitted 5 June, 2014; v1 submitted 24 December, 2013;
originally announced December 2013.
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Spin-phonon coupling in multiferroic RCrO$_3$ (R-Y, Lu, Gd, Eu, Sm): A Raman study
Authors:
Venkata Srinu Bhadram,
B. Rajeswaran,
A. Sundaresan,
Chandrabhas Narayana
Abstract:
Raman study on a select few orthochromites, RCrO$_3$ (R = Y, Lu, Gd, Eu and Sm) shows that the phonon behavior at TN in compounds with magnetic R-ion (Gd and Sm) is remarkably different from that of non-magnetic R-ion (Y, Lu and Eu). While anomalies in most of the observed phonon frequencies in all these compounds may result from the distortion of CrO$_6$ octahedra due to size effect and magnetost…
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Raman study on a select few orthochromites, RCrO$_3$ (R = Y, Lu, Gd, Eu and Sm) shows that the phonon behavior at TN in compounds with magnetic R-ion (Gd and Sm) is remarkably different from that of non-magnetic R-ion (Y, Lu and Eu). While anomalies in most of the observed phonon frequencies in all these compounds may result from the distortion of CrO$_6$ octahedra due to size effect and magnetostriction arising from Cr-ordering, the anomalous behavior of their linewidths observed at TN for the compounds with only magnetic R-ion suggests spin-phonon coupling. The presence of spin-phonon coupling and the anomalies in the low frequency modes related to R-ion motion in orthochromites (R = Gd and Sm) support the suggestion that the coupling between 4f-3d moments play important role in inducing switchable electric polarization.
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Submitted 10 June, 2013; v1 submitted 16 May, 2012;
originally announced May 2012.
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Griffiths phase-like behaviour and spin-phonon coupling in double perovskite Tb$_{2}$NiMnO$_{6}$
Authors:
Harikrishnan S. Nair,
Diptikanta Swain,
Hariharan N.,
Shilpa Adiga,
Chandrabhas Narayana,
Suja Elizabeth
Abstract:
The Griffiths phase-like features and the spin-phonon coupling effects observed in Tb$_2$NiMnO$_6$ are reported. The double perovskite compound crystallizes in monoclinic $P2_1/n$ space group and exhibits a magnetic phase transition at $T_c \sim$ 111 K as an abrupt change in magnetization. A negative deviation from ideal Curie-Weiss law exhibited by 1/$χ(T)$ curves and less-than-unity susceptibili…
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The Griffiths phase-like features and the spin-phonon coupling effects observed in Tb$_2$NiMnO$_6$ are reported. The double perovskite compound crystallizes in monoclinic $P2_1/n$ space group and exhibits a magnetic phase transition at $T_c \sim$ 111 K as an abrupt change in magnetization. A negative deviation from ideal Curie-Weiss law exhibited by 1/$χ(T)$ curves and less-than-unity susceptibility exponents from the power-law analysis of inverse susceptibility are reminiscent of Griffiths phase-like features. Arrott plots derived from magnetization isotherms support the inhomogeneous nature of magnetism in this material. The observed effects originate from antiferromagnetic interactions which arise from inherent disorder in the system. Raman scattering experiments display no magnetic-order-induced phonon renormalization below $T_c$ in Tb$_2$NiMnO$_6$ which is different from the results observed in other double perovskites and is correlated to the smaller size of the rare earth. The temperature evolution of full-width-at-half-maximum for the {\it stretching} mode at 645 cm$^{-1}$ presents an anomaly which coincides with the magnetic transition temperature and signals a close connection between magnetism and lattice in this material.
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Submitted 19 November, 2011;
originally announced November 2011.
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Influence of lattice distortion on the Curie temperature and spin-phonon coupling in LaMn$_{0.5}$Co$_{0.5}$O$_{3}$
Authors:
M. Viswanathan,
P. S. Anil Kumar,
Venkata Srinu Bhadram,
Chandrabhas Narayana,
A. K. Bera,
S. M. Yusuf
Abstract:
Two distinct ferromagnetic phases of LaMn$_{0.5}$Co$_{0.5}$O$_{3}$ having monoclinic structure with distinct physical properties have been studied. The ferromagnetic ordering temperature $\textit{T}_{c}$ is found to be different for both the phases. The origin of such contrasting characteristics is assigned to the changes in the distance(s) and angle(s) between Mn - O - Co resulting from distortio…
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Two distinct ferromagnetic phases of LaMn$_{0.5}$Co$_{0.5}$O$_{3}$ having monoclinic structure with distinct physical properties have been studied. The ferromagnetic ordering temperature $\textit{T}_{c}$ is found to be different for both the phases. The origin of such contrasting characteristics is assigned to the changes in the distance(s) and angle(s) between Mn - O - Co resulting from distortions observed from neutron diffraction studies. Investigations on the temperature dependent Raman spectroscopy provide evidence for such structural characteristics, which affects the exchange interaction. The difference in B-site ordering which is evident from the neutron diffraction is also responsible for the difference in $\textit{T}_{c}$. Raman scattering suggests the presence of spin-phonon coupling for both the phases around the $\textit{T}_{c}$. Electrical transport properties of both the phases have been investigated based on the lattice distortion.
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Submitted 7 September, 2010;
originally announced September 2010.
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Elastic and structural instability of cubic Sn3N4 and C3N4 under pressure
Authors:
Gopal K. Pradhan,
Anil Kumar,
Umesh V. Waghmare,
Sudip K. Deb,
Chandrabhas Narayana
Abstract:
We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and underst…
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We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and understand these results with complementary first-principles analysis of structural, elastic and vibrational properties of group IV-nitrides, and predict a structural transition of Sn3N4 at a higher pressure of 88 GPa compared to earlier predictions of 40 GPa. Our comparative analysis of cubic nitrides shows that bulk modulus of cubic C3N4 is the highest (379 GPa) while it is structurally unstable and should not exist at ambient conditions.
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Submitted 11 March, 2010;
originally announced March 2010.
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Pressure-induced phonon-freezing in the ZnBeSe alloy: a study via the percolation mesoscope
Authors:
Gopal K. Pradhan,
Chandrabhas Narayana,
Olivier Pages,
Abedalhasan Breidi,
Jihane Souhabi,
Andrei Viktor Postnikov,
Fouad El Haj Hassan,
Sudip K. Deb,
Franciszek Firszt,
Wojtek Paszkowicz,
Abhay Shukla
Abstract:
We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural…
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We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural one for the Be-Se bonds. The freezing of the Be-Se stretching mode is discussed within the scope of the percolation model (mesoscopic scale), with ab initio calculations in support (microscopic scale).
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Submitted 28 October, 2009; v1 submitted 27 October, 2009;
originally announced October 2009.
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Electronic and vibrational Raman spectroscopy of Nd$_{0.5}$Sr$_{0.5}$MnO$_3$ through the phase transitions
Authors:
Md. Motin Seikh,
A. K. Sood,
Chandrabhas Narayana
Abstract:
Raman scattering experiments have been carried out on single crystals of Nd$_{0.5}$Sr$_{0.5}$MnO$_3$ as a function of temperature in the range of 320-50 K, covering the paramagnetic insulator-ferromagnetc metal transition at 250 K and the charge-ordering antiferromagnetic transition at 150 K. The diffusive electronic Raman scattering response is seen in the paramagnetic phase which continue to e…
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Raman scattering experiments have been carried out on single crystals of Nd$_{0.5}$Sr$_{0.5}$MnO$_3$ as a function of temperature in the range of 320-50 K, covering the paramagnetic insulator-ferromagnetc metal transition at 250 K and the charge-ordering antiferromagnetic transition at 150 K. The diffusive electronic Raman scattering response is seen in the paramagnetic phase which continue to exist even in the ferromagnetic phase, eventually disappearing below 150 K. We understand the existence of diffusive response in the ferromagnetic phase to the coexistence of the different electronic phases. The frequency and linewidth of the phonons across the transitions show significant changes, which cannot be accounted for only by anharmonic interactions.
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Submitted 20 April, 2005;
originally announced April 2005.
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Brillouin scattering studies in Fe$_3$O$_4$ across the Verwey transition
Authors:
Md. Motin Seikh,
Chandrabhas Narayana,
P. A. Metcalf,
J. M. Honig,
A. K. Sood
Abstract:
Brillouin scattering studies have been carried out on high quality single crystals of Fe$_3$O$_4$ with [100] and [110] faces in the temperature range of 300 to 30 K. The room temperature spectrum shows a surface Rayleigh wave (SRW) mode at 8 GHz and a longitudinal acoustic (LA) mode at 60 GHz. The SRW mode frequency shows a minimum at the Verwey transition temperature $T_V$ of 123 K. The softeni…
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Brillouin scattering studies have been carried out on high quality single crystals of Fe$_3$O$_4$ with [100] and [110] faces in the temperature range of 300 to 30 K. The room temperature spectrum shows a surface Rayleigh wave (SRW) mode at 8 GHz and a longitudinal acoustic (LA) mode at 60 GHz. The SRW mode frequency shows a minimum at the Verwey transition temperature $T_V$ of 123 K. The softening of the SRW mode frequency from about 250 K to $T_V$ can be quantitatively understood as a result of a decrease in the shear elastic constant C$_{44}$, arising from the coupling of shear strain to charge fluctuations. On the other hand, the LA mode frequency does not show any significant change around $T_V$, but shows a large change in its intensity. The latter shows a maximum at around 120 K in the cooling run and at 165 K in the heating run, exhibiting a large hysteresis of 45 K. This significant change in intensity may be related to the presence of stress-induced ordering of Fe$^{3+}$ and Fe$^{2+}$ at the octahedral sites, as well as to stress-induced domain wall motion.
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Submitted 19 April, 2005; v1 submitted 13 December, 2003;
originally announced December 2003.
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Brillouin Scattering Studies of La_{0.77}Ca_{0.23}MnO_3 Across Metal-Insulator Transition
Authors:
Md. Motin Seikh,
Chandrabhas Narayana,
L. Sudheendra,
A. K. Sood,
C. N. R. Rao
Abstract:
Temperature-dependent Brillouin scattering studies have been carried out on La_{0.77}Ca_{0.23}MnO_3 across the paramagnetic insulator - ferromagnetic metal (I-M) transition. The spectra show a surface Rayleigh wave (SRW) and a high velocity pseudo surface acoustic wave (HVPSAW) besides bulk acoustic waves (BAW). The Brillouin shifts associated with SRW and HVPSAW show blue-shifts, where as the f…
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Temperature-dependent Brillouin scattering studies have been carried out on La_{0.77}Ca_{0.23}MnO_3 across the paramagnetic insulator - ferromagnetic metal (I-M) transition. The spectra show a surface Rayleigh wave (SRW) and a high velocity pseudo surface acoustic wave (HVPSAW) besides bulk acoustic waves (BAW). The Brillouin shifts associated with SRW and HVPSAW show blue-shifts, where as the frequencies of the BAW decrease below the I-M transition temperature (T_C) of 230 K. These results can be understood based on the temperature dependence of the elastic constants. We also observe a central peak whose width is maximum at T_C.
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Submitted 3 March, 2003;
originally announced March 2003.
