-
Confinement Highlights the Different Electrical Transport Mechanisms Prevailing in Conducting Polymers
Authors:
Sukanya Das,
Anil Kumar,
K. S. Narayan
Abstract:
We study the differences in electrical charge transport dynamics of the conductivity enhancement of poly(3,4-ethylenedioxythiophene) (PEDOT) derivatives under geometrical confinement. The results of polymer blend poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) and a polymer-monomer blend, poly(3,4- ethylenedioxythiophene):tosylate, highlight the role of dopants and processing conditions o…
▽ More
We study the differences in electrical charge transport dynamics of the conductivity enhancement of poly(3,4-ethylenedioxythiophene) (PEDOT) derivatives under geometrical confinement. The results of polymer blend poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) and a polymer-monomer blend, poly(3,4- ethylenedioxythiophene):tosylate, highlight the role of dopants and processing conditions of these systems under confinement. The prevailing transport length scales in confined geometry of characteristic dimensions originate from varying disorder in these polymer systems. These observable differences in two different PEDOTs introduced by molecular level reorganization can be utilized to tune conducting polymer systems for efficient electrical and thermoelectric properties. The electrical conductivity σ of the polymer system, which is a function of the electronic structure at molecular level and a connectivity parameter, has been probed in cylindrical-alumina nanoscaffolds of various channel diameters, at different frequencies ω and temperatures T. The observations also emphasize the role of disorder in these conducting polymer systems.
△ Less
Submitted 3 March, 2022;
originally announced March 2022.
-
Visualization of carrier transport in lateral metal-perovskite-metal structures and its influence on device operation
Authors:
N. Ganesh,
A. Z. Ashar,
Sumukh Purohit,
K. L. Narasimhan,
K. S. Narayan
Abstract:
The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics, especially at the metal-perovskite interface, and its influence on device operation are not widely understood. This work presents the dominant transport mechanisms in methylammonium lead iodide (MAPbI3) perovskite-based asymmetric metal-electrode lateral devi…
▽ More
The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics, especially at the metal-perovskite interface, and its influence on device operation are not widely understood. This work presents the dominant transport mechanisms in methylammonium lead iodide (MAPbI3) perovskite-based asymmetric metal-electrode lateral devices. The device operation is studied with inter-electrode lengths varying from 4 μm to 120 μm. Device characteristics indicate distinct ohmic and space-charge limited current (SCLC) regimes that are controlled by the inter-electrode length and applied bias. The electric-potential mapping using Kelvin-Probe microscopy across the device indicates minimal ion-screening effects and the presence of a transport barrier at the metal-MAPbI3 junction. Further, photocurrent imaging of the channel using near-field excitation-scanning microscopy reveals dominant recombination and charge-separation zones. These lateral devices exhibit photodetector characteristics with a responsivity of about 51 mA/W in self-powered mode and 5.2 A/W at 5 V bias, in short-channel devices (4 μm). The low device capacitance enables a fast light-switching response of ~12 ns.
△ Less
Submitted 24 February, 2022;
originally announced February 2022.
-
Impact of Trap Filling on Carrier Diffusion in MAPbBr$_3$ Single Crystals
Authors:
N. Ganesh,
Anaranya Ghorai,
Shrreya Krishnamurthy,
Suman Banerjee,
K. L. Narasimhan,
Satishchandra B. Ogale,
K. S. Narayan
Abstract:
We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter,…
▽ More
We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter, $L_d$, which is a measure of effective carrier diffusion. The $L_d$ magnitudes for electrons and holes were determined to be ~ 13.3 $μ$m and ~ 13.8 $μ$m respectively. A marginal increase in uniform light bias ($\leq 5 \times 10^{15}$ photons/cm$^2$) increases the modulated photocurrent magnitude and reduces the $L_d$ parameter by a factor of two and three for electrons and holes respectively, indicating that the recombination is not monomolecular. The $L_d$ variations were correlated to the features in photoluminescence lifetime studies. Analysis of lifetime variation shows intensity-dependent monomolecular and bimolecular recombination trends with recombination constants determined to be ~ 9.3 $\times 10^6$ s$^{-1}$ and ~ 1.4 $\times 10^{-9}$ cm$^{3}$s$^{-1}$ respectively. Based on the trends of $L_d$ and lifetime, it is inferred that the sub-band-gap trap recombination influences carrier transport in the low-intensity excitation regime, while bimolecular recombination and transport dominate at high intensity.
△ Less
Submitted 26 July, 2020;
originally announced July 2020.
-
Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors
Authors:
Satyaprasad P. Senanayak,
Vinod K. Sangwan,
Julian J. McMorrow,
Ken Everaerts,
Zhihua Chen,
Antonio Facchetti,
Mark C. Hersam,
Tobin J. Marks,
K. S. Narayan
Abstract:
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized i…
▽ More
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high performance electronics with p-type field-effect mobility exceeding 2 cm^2/(V.s). A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultra-thin nanodielectric. Thus, we demonstrate a three-fold increase in the capacitance from 0.1 uF/cm^2 to 0.34 uF/cm^2, which results in a 200% increase in TFT channel current.
△ Less
Submitted 6 June, 2018;
originally announced June 2018.
-
Studies of long-lived photogenerated carriers in low band gap polymer photodiodes
Authors:
M. Bag,
K. S. Narayan
Abstract:
Defects in low-bandgap polymer based photodetectors play a critical role in determining switching characteristics in the near infra-red spectral-regime relevant to communication wavelength. We carry out detailed studies of the bandwidth limiting factors of the long-live transient photocurrent at different incident wavelength as a function of temperature, light pulse width, bias voltage. The result…
▽ More
Defects in low-bandgap polymer based photodetectors play a critical role in determining switching characteristics in the near infra-red spectral-regime relevant to communication wavelength. We carry out detailed studies of the bandwidth limiting factors of the long-live transient photocurrent at different incident wavelength as a function of temperature, light pulse width, bias voltage. The results indicate that dominant transport mechanism of the photogenerated carriers is limited by recombination at low temperature and detrapping rate at high temperature. A general trend of a slower response of photocarriers originating from the band-tail region is observed.
△ Less
Submitted 12 February, 2015;
originally announced February 2015.
-
Room Temperature Band-like Transport and Hall Effect in a High Mobility Ambipolar Polymer
Authors:
Satyaprasad P. Senanayak,
A. Z. Ashar,
Catherine Kanimozhi,
Satish Patil,
K. S. Narayan
Abstract:
The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we investigate the origin of ultra-low degree of disorder (~ 16 meV) and band-like negative temperature (T) coefficient of the field effect electron mobility in a high perf…
▽ More
The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we investigate the origin of ultra-low degree of disorder (~ 16 meV) and band-like negative temperature (T) coefficient of the field effect electron mobility in a high performance diketopyrrolopyrrole (DPP)-based semiconducting polymer. Models based on the framework of mobility edge (ME) with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates de-localized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility extracted from Hall-voltage measurements in these devices was found to be comparable to field effect mobility in the high T band-like regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design which emphasizes uniform-energetic landscape and low re-organization energy.
△ Less
Submitted 3 November, 2014;
originally announced November 2014.
-
Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges
Authors:
Rabaya Basori,
K. Das,
Prashant Kumar,
K. S. Narayan,
A. K. Raychaudhuri
Abstract:
We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivit…
▽ More
We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0 A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed by two back-to-back Schottky diodes model, which shows the predominant photocurrent in the device arising from the photoconductive response of the nanowires.
△ Less
Submitted 22 October, 2012;
originally announced October 2012.
-
Observation of a Large Photo-response in a Single Nanowire (Diameter ~30 nm) of Charge Transfer Complex Cu:TCNQ
Authors:
Rabaya Basori,
Kaustuv Das,
T. Phanindra. Sai,
Prashant Kumar,
K. S. Narayan,
Arup K. Raychaudhuri
Abstract:
We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers.…
▽ More
We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers. We have quantitatively analyzed the bias dependent photocurrent by a model of two back to back Schottky diodes connected by a series resistance. The observation shows that the large photoresponse of the device primarily occurs due to the reduction of the barrier at the contact regions due to illumination along with the photoconductive contribution. There is also a bias driven reduction of the nanowire resistance that is a unique feature for the material.
△ Less
Submitted 18 October, 2012;
originally announced October 2012.
-
Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors
Authors:
Satyaprasad P. Senanayak,
S. Guha,
K. S. Narayan
Abstract:
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrica…
▽ More
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.
△ Less
Submitted 19 February, 2012;
originally announced February 2012.
-
Universality in Intensity Modulated Photocurrent in Bulk-Heterojunction Polymer Solar Cells
Authors:
Monojit Bag,
K. S. Narayan
Abstract:
We observe a universal feature in the frequency dependence of intensity modulated photocurrent Iph based on studies of a variety of efficient bulk-heterojunction polymer solar cells (BHJ-PSCs). This feature of Iph appears in the form of a local maximum in the 5 kHz < frequency < 10 kHz range and is observed to be largely independent of the external parameters such as modulated light intensity (Lac…
▽ More
We observe a universal feature in the frequency dependence of intensity modulated photocurrent Iph based on studies of a variety of efficient bulk-heterojunction polymer solar cells (BHJ-PSCs). This feature of Iph appears in the form of a local maximum in the 5 kHz < frequency < 10 kHz range and is observed to be largely independent of the external parameters such as modulated light intensity (Lac), wavelength, temperature (T), and external field (EF) over a wide range. Simplistic kinetic models involving carrier generation, recombination and extraction processes are used to interpret the overall essential features of Iph and correlate it to the device parameters.
△ Less
Submitted 6 August, 2010;
originally announced August 2010.
-
Electric field Induced Patterns in Soft Visco-elastic films: From Long Waves of Viscous Liquids to Short Waves of Elastic Solids
Authors:
N. Arun,
Ashutosh Sharma,
Partho S. G. Pattader,
Indrani Banerjee,
Hemant M. Dixit,
K. S. Narayan
Abstract:
We show that the electric field driven surface instability of visco-elastic films has two distinct regimes: (1) The visco-elastic films behaving like a liquid display long wavelengths governed by applied voltage and surface tension, independent of its elastic storage and viscous loss moduli, and (2) the films behaving like a solid require a threshold voltage for the instability whose wavelength…
▽ More
We show that the electric field driven surface instability of visco-elastic films has two distinct regimes: (1) The visco-elastic films behaving like a liquid display long wavelengths governed by applied voltage and surface tension, independent of its elastic storage and viscous loss moduli, and (2) the films behaving like a solid require a threshold voltage for the instability whose wavelength always scales as ~ 4 x film thickness, independent of its surface tension, applied voltage, loss and storage moduli. Wavelength in a narrow transition zone between these regimes depends on the storage modulus.
△ Less
Submitted 2 June, 2009;
originally announced June 2009.
-
Nonexponetial relaxation of photoinduced conductance in organic field effect transistor
Authors:
Soumya Dutta,
K. S. Narayan
Abstract:
We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due…
▽ More
We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is further modified by introducing a gate voltage dependent coulombic distribution manifested by the trapped negative charge carriers.
△ Less
Submitted 12 September, 2003;
originally announced September 2003.
-
Polarization-dependent discharge in fibers of semiconducting ladder-type polymer
Authors:
N. Kumar,
K. S. Narayan
Abstract:
We report results on polarization-dependent photoinduced discharge in oriented fibers and films of ladder-type, electron-transporting polymer poly (benzimidazobenzophenanthroline), BBL. The photocarrier generation efficiency in the fiber which is indicated by the rate of discharge, is found to be distinctly higher for light polarized parallel to the fiber axis as compared to the radially perpend…
▽ More
We report results on polarization-dependent photoinduced discharge in oriented fibers and films of ladder-type, electron-transporting polymer poly (benzimidazobenzophenanthroline), BBL. The photocarrier generation efficiency in the fiber which is indicated by the rate of discharge, is found to be distinctly higher for light polarized parallel to the fiber axis as compared to the radially perpendicular direction . Similar results, with photocarrier generation efficiency anisotropy ~ 10 are obtained for oriented films. These observations are different from previously obtained results on polyparaphenylenevinylene (PPV). The results are compared with the polarization-dependent steady- state photoconductivity measurements. We interpret these results on the basis of molecular and macroscopic features of the material.
△ Less
Submitted 4 February, 2001;
originally announced February 2001.
